Abstract
In this paper, the short-circuit performance of a conventional 3.3-kV clustered insulated gate bipolar transistor (CIGBT) in field-stop (FS) technology is evaluated through extensive 2-D numerical simulations. For comparison, an equivalent 3.3-kV FS IGBT is considered. The conventional CIGBT shows superior performance of lower on-state voltage drop and saturation current densities in comparison to an equivalent IGBT. Further improvements to the CIGBT performance can be obtained without sacrificing on-state voltage drop by using a PMOS trench gate. The charge balance and electric field distribution with the varying n-buffer thickness at short-circuit condition are analyzed in detail.
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