Field Emission Current Density Research Articles

Effect of discharge pulse frequency on the microstructure and field-emission performance of CNX films deposited by pulse cathode arc evaporation

CNX thin films were prepared by a pulse cathode arc technique using nitrogen as a dopant at different frequencies. Microstructure, compositions, and morphology of CNX thin films were investigated in the dependence of discharge pulse frequency by Raman spectroscopy, x-ray photoelectric spectroscopy (XPS), atomic force microscopy, scanning electron microscopy, UV–vis spectrophotometry, Hall measurements, and field-emission test. The results of Raman and XPS showed that the Csp2 cluster size of CNX films decreases and then increases and decreases with discharge pulse frequency increasing. The Csp2 cluster size of the films prepared at 9 Hz was the largest. The size of Csp3 content increases for the CNX films at the high discharge pulse frequency. The variation of C–N bonding content with frequency in CNX films is similar to that of Csp2. CNX thin films prepared at a frequency of 9 Hz were improved field-emission properties corresponding to the variation of microstructure parameters (the size and ordering of Csp2 clusters) and compositions (C–N bonds). The excellent field-emission properties, such as a low turn-on electric field of 2.1 V/μm and a high field-emission current density of 517.34 μA/cm2, were obtained.

Development of Numerical Analysis Method for Cathode Sheath Considering Electron Emission From Cathode in Vacuum Arc

ABSTRACTIt is imperative to develop the simulation of vacuum arcs as a tool to aid electrode design in vacuum circuit breakers. Although the development of electromagnetic thermo‐fluid simulations for vacuum arcs has been reported, most of them do not take cathode sheath phenomena into account and have not been able to reproduce vacuum arc phenomena, especially cathode spots. As the first step, the cathode sheath voltage, cathode surface electric field, and temperature and field (T‐F) electron emission current were analyzed numerically on the basis of the space charge in the cathode sheath. In this study, the cathode sheath was assumed to exist when the charge density induced on the cathode surface is positive, and the temperature and density of vacuum arc plasma and cathode temperature, which are physical quantities obtained by electromagnetic thermo‐fluid simulation, were used as parameters of the analysis. As a result, the cathode sheath voltage, electric field, and electron emission current density can be calculated from the vacuum arc plasma temperature, density, and cathode temperature. Numerical results show that the electron emission current density has a dominant effect on the presence or absence of the cathode sheath.

Electric field emission in GdNiO3 microflower

GdNiO3 microflowers were synthesized by hydrothermal method with unit sizes of about 2.2–3.5 μm and petal sizes of ∼75–100 nm. The X-ray diffraction pattern (XRD) and Raman spectra reveal an orthorhombic crystal structure with the space group Pbnm and various Raman active vibrational modes i.e., Ag, B1 g, B2 g associated with rare earth nickelates. The total density of states (TDOS) was calculated by density functional theory (DFT) study using a hybrid functional (HSE06) and the volume of TDOS near the Fermi level confirms the semiconducting nature of GdNiO3 with band gap ∼0.688 eV. The local bulk work function (φ) was estimated theoretically at ∼5.35 eV from DFT calculations which is one of the essential parameters for the field enhancement factor (β). Field emission current density (J) vs. applied electric field (E) divulges a low turn-on field (Eto)∼4.6 V/μm@1 μA/cm2 and a threshold field (Eth)∼5.2 V/μm@10 μA/cm2 respectively. The Fowler-Nordheim (F-N) model was introduced to calculate β ∼1637 and long-term field emission current stability was observed experimentally > 4 h at the preset values of current 2 μA and 10 μA, respectively. The easy preparedness, low turn-on field, and long-term current stability without significant decay suggest this material to be an efficient electron field emitting material in the rare-earth nickelates series.

Simulation study of secondary electron multiplication on microwave dielectric window

The phenomenon of dielectric breakdown in microwave windows restricts the enhancement of power capacity in high-power microwave systems. This process starts with the secondary electron multiplication, which significantly influences the breakdown threshold. In this study, we developed 3D simulation models for rectangular, circular, and annular windows to examine the secondary electron multiplication on their surfaces using the particle-in-cell method. Through a comparative study, we assessed the effects of various input powers, initial emission current densities from particle sources, and magnetic fields. Our findings reveal that the initial field emission current density, which ranges from 10−9 to 109 μA/cm2, marginally affects electron multiplication. However, increased microwave power (with power density ranging from 0.1 to 18.75 MW/cm2) accelerates this multiplication. Strong magnetic fields and non-uniform electric fields further enhance the electron multiplication process.

Enhanced field emission characteristics of WS2 nano-films by diamond film and Mo film

WS2 is a type of transition metal chalcogenide materials (TMDCs) that exhibits exceptional photoelectric properties. Due to its atomically sharp edges, WS2 has the capability to enhance the electric field around its edges, thus presenting significant potential in field emission applications. In this study, the electron beam vapor deposition (EBVD) system and microwave plasma chemical vapor deposition (MPCVD) system were used to prepare a series of single-layer WS2 films，single-layer diamond films and diamond/WS2 nano-composite films on N-type highly doped Si substrate, and Mo/WS2 nano-composite films were prepared on Al2O3 ceramic substrate. Based on the characterization and analysis of the microstructure and chemical composition of each thin film layer in the above film devices, the field emission (FE) characteristics of each thin film device are compared and studied. The results demonstrate that the maximum FE current density of diamond/WS2 nano-composite film device is 912 μA/cm2, which is 2.7 times of the maximum FE current density of Mo/WS2 nano-composite film device 330 μA/cm2, and 3.4 times of the maximum FE current density of the single-layer diamond thin film device 267 μA/cm2. The single layer WS2 film did not exhibit measurable FE performance. The working principles of thin film field emission devices with various structures are introduced. It is considered that the diamond layer plays the role of electron accelerating layer, which not only effectively improves the FE characteristics of diamond/WS2 nanocomposite film, but also improves the repeatability and long-term stability of diamond/WS2 nanocomposite film FE devices.

A Study on the Field Emission Characteristics of High-Quality Wrinkled Multilayer Graphene Cathodes.

Field emission (FE) necessitates cathode materials with low work function and high thermal and electrical conductivity and stability. To meet these requirements, we developed FE cathodes based on high-quality wrinkled multilayer graphene (MLG) prepared using the bubble-assisted chemical vapor deposition (B-CVD) method and investigated their emission characteristics. The result showed that MLG cathodes prepared using the spin-coating method exhibited a high field emission current density (~7.9 mA/cm2), indicating the excellent intrinsic emission performance of the MLG. However, the weak adhesion between the MLG and the substrate led to the poor stability of the cathode. Screen printing was employed to prepare the cathode to improve stability, and the influence of a silver buffer layer was explored on the cathode's performance. The results demonstrated that these cathodes exhibited better emission stability, and the silver buffer layer further enhanced the comprehensive field emission performance. The optimized cathode possesses low turn-on field strength (~1.5 V/μm), low threshold field strength (~2.65 V/μm), high current density (~10.5 mA/cm2), and good emission uniformity. Moreover, the cathode also exhibits excellent emission stability, with a current fluctuation of only 6.28% during a 4-h test at 1530 V.

Study on field emission performance of SrTiO3 film enhanced by LiF film

A series of monolayer SrTiO3 films and LiF/SrTiO3 bilayer films were prepared on n-Si substrates by using vacuum electron beam vapor deposition (EBVD) technology. The morphologies and thicknesses of the SrTiO3 film and LiF film were controlled through adjustments and optimization of the growth conditions as well as deposition time. The experimental results show that the field emission performance of SrTiO3 film is significantly improved after LiF film is added. Under the research conditions in our laboratory, a large number of LiF/SrTiO3 bilayer film field emission devices have been tested and analyzed in the wide range of LiF film thickness (10–300 nm), and the effective field emission LiF film thickness (50–90 nm) was initially determined. Further study shows that the LiF/SrTiO3 bilayer film has the best field emission performance when the optimal LiF film thickness is 70 nm, and its maximum field emission current density can reach 305.48 μA/cm2. The field emission current density of the LiF/SrTiO3 bilayer thin film device is nearly 4 times compared to that of the monolayer SrTiO3 film when the applied electric field intensity reaches 9.05 V/μm. All the field emission devices exhibit excellent functioning stability and experimental reproducibility.

High performance field emission cathode based on the diamond nanowires prepared by nanocrystalline diamond films annealed in air

This paper reports the field emission (FE) characteristics of a diamond nanowires (DNWs) array. The nanocrystalline diamond (NCD) film was deposited on silicon by microwave plasma chemical vapor deposition (MPCVD) and then annealed in air forming DNWs and hydrogenated at last. A high-field flat-plate emission test structure with a 1.03 μm gap between anode and cathode was prepared and the electrical properties proved it feasible. The FE performance of DNWs array was measured in a vacuum test system and that of NCDs film as a comparison. Finally, their FE parameters were analyzed and extracted based on the Fowler–Nordheim (F-N) theory. The results show that transforming NCDs film into DNWs array can improve the FE characteristics greatly. The turn-on field is as low as 1.36 V μm−1 dropping by one order of magnitude, while the field enhancement factor and FE current density are up to 156.68 and 484.75 mA cm−2 respectively rising both by two orders of magnitude. This excellent FE performance stems from the characteristics of large aspect ratio, very small tip radius and high density of DNWs.

Electrophysical properties of laser-structured carbon nanomaterials functionalized with LaB6 nanoparticles

In this paper, we perform density functional theory (DFT)-calculations to study the effect of LaB6 nanoparticles on the electrophysical properties of carbon nanomaterial based on laser-structured multi-walled carbon nanotubes (MWCNTs). Based on the calculation results, the most energetically favorable landing sites for LaB6 nanoparticles on the surface of the carbon framework are determined. It is found that during the functionalization with LaB6 nanoparticles, the carbon framework takes on a charge from the atoms of lanthanum and boron, which leads to an increase in the density of electronic states of the MWCNT nanostructure. It is shown that even at low concentrations of LaB6 nanoparticles (4.5 %), the work function of the carbon nanomaterial decreases by 0.5 eV. The results of the calculations are verified in the course of a real experiment. To carry it out, using the original technology of laser irradiation, a hybrid nanomaterial was created from a vertical array of MWCNTs functionalized with LaB6 nanoparticles. Pulsed laser action on an array of MWCNTs with an adjusted energy density of 0.15 J/cm2 made it possible to shorten, align, and orient the upper ends of the nanotubes perpendicular to the substrate. The effect of binding of LaB6 nanoparticles to a carbon surface has been experimentally established. Laser exposure of the MWCNT array coated with LaB6 nanoparticles resulted in a ∼ 5 by times increase in electrical conductivity compared to the original MWCNT array. Recording the emission current-voltage characteristics of hybrid nanomaterials demonstrated a decrease in the total work function of the carbon nanomaterial after functionalization with LaB6 nanoparticles by 16 %. Field emission current density values were calculated for all samples based on their measured field emission CVC characteristics. The MWCNT array exhibited the highest current density of 0.37 A/cm2 after LaB6 deposition and laser exposure. It is predicted that the carbon nanomaterial based on laser-structured MWCNTs coated with LaB6 nanoparticles will be an excellent nanomaterial for field emission electronics.

Field Emission in Emerging Two-Dimensional and Topological Materials: A Perspective

Since the first field emission model or the well-known Fowler-Nordheim (FN) law was formulated about a century ago (in 1928), it remains an active topic to discover different aspects of field emission due to new materials and structures, geometrical effects, high current space charge effects, short pulse regime, and analytical models. Despite its simplicity, the original FN law, or its improvement, the Murphy-Good (MG) model remains as the important equations to characterize different field emitters. With the emergence of two-dimensional (2-D) materials such as graphene, transition-metal dichalcogenide (TMD) materials, and topological materials (such as topological insulators and semimetals) in the past two decades, new experiments and theoretical models are produced to study the validity of FN law and MG model on field emission from these quantum materials and to explore their applications as compact field emitters operating at low turn-on field. In this short perspective, after a very brief introduction of FN law and some recent (selected) improvements, we proceed to review the experimental works measuring field emission from the abovementioned quantum materials. The key performances, such as experimental growth methods, and emission characteristics, such as turn-on field, field enhancement factor, and field emission current density, are summarized and compared. During the discussion, we also highlight some recent models proposed to account for the effects of nonparabolic dispersion and topologically nontrivial bandstructures within these quantum materials. We suggest the importance of having consistent physics-based models to understand the field emission from these quantum materials and reinforce the presence of a non-FN scaling law due to their unique properties absent from the traditional bulk materials. Finally, we conclude by highlighting some possible new directions that may be further explored in future.

Effect of N2 flux on the field emission properties of synthesized ZnO/ZrN core-shell nanostructures

In this paper, the highly oriented ZnO/ZrN nanoneedle emitters with excellent field emission performance were fabricated by sputtering ZrN particles with different N2 flux to modify ZnO nanoneedle arrays. The effects of different N2 flow on the microscopic morphology, structure and field emission properties of ZnO nanoneedles were investigated. The results shows that the ZnO/ZrN nanoneedles (ZnO/ZrN-1.6) emitter prepared when the flow of N2 gas is 1.6 SCCM exhibits the best field emission performance, with the lowest turn-on electric field Eto at 0.81 V/μm, and a field emission current density of 25 mA/cm2 which was 25 times of pure ZnO. In addition to the improvement of band structure, the improvement of field emission performance can also be attributed to the tunneling effect of electrons through heterostructure. This well-aligned ZnO/ZrN core-shell cathode with excellent emission characteristics grown on carbon cloth substrate has the potential applications in future flexible light source devices.

Improvement of the field emission lifetime of freestanding vertically aligned carbon nanotubes by coating with a metallic protective layer

In this article, we present a method to improve the field emission (FE) lifetime of freestanding vertically aligned carbon nanotubes (VACNTs) by uniformly coating the surface of VACNTs with a thin metallic layer that has low work function, high melting point and high electrical conductivity. The effects of three different metal shells on the FE performance are investigated. The FE performances of these VACNTs are evaluated by testing the turn-on electric field and long-term FE performance. The metal coatings do not have pronounced effects on turn-on electric field of VACNTs, but their FE lifetimes were improved to varying degrees. A 5 nm tungsten and gold coatings have the most significant improvement on the FE lifetime and current density stability. They have shown negligible degradation during continuous 48-h FE testing at a current density over 7 mSSA·cm −2. In addition, a 10 nm titanium, gold, and tungsten coatings also provide significant improvements in lifetime and emission current stability. Furthermore, it was observed that the metal shells are uniformly distributed on the surface of VACNTs, and they can effectively protect the VACNT from being melted by the Joule heat generated during FE. Therefore, metal-coated VACNTs have the potential to increase the lifetime of VACNT emitters during high current FE applications.

Fast and accurate determination of the curvature-corrected field emission current

The curvature-corrected field emission current density, obtained by linearizing at or below the Fermi energy, is investigated. Two special cases, corresponding to the peak of normal energy distribution and mean normal energy, are considered. It is found that the current density evaluated using the mean normal energy results in errors in the net emission current below 3% for apex radius of curvature Ra≥5 nm and for apex fields Ea in the range of 3–10 V/nm for an emitter having a work function of ϕ=4.5 eV. An analytical expression for the net field emission current is also obtained for local parabolic tips using the generalized cosine law. The errors are found to be below 6% for Ra≥5 nm over an identical range of apex field strengths. The benchmark current is obtained by numerically integrating the current density over the emitter surface and the current density itself computed by integrating over the energy states using the exact Gamow factor and the Kemble form for the WKB transmission coefficient. The analytical expression results in a remarkable speed-up in the computation of the net emission current and is especially useful for large area field emitters having tens of thousands of emission sites.

Directly tuning the surface morphologies and electron pathway of graphite/diamond composite films for enhanced electron field emission

Cathode electron field emitters are widely used in high-power and high-frequency vacuum electron devices. The development of novel technique to fabricate the emitters with high electron field emission performance has stimulated extensive research. Here we present a unique one-step microwave plasma chemical vapor deposition process to fabricate the graphite/diamond composite films. The gaseous methane is replaced by liquid n-butylamine, which acts as the single reactive carbon source. The components and surface morphologies of the graphite/diamond composite films can be effectively tuned upon changing the deposition temperatures. The vertically oriented graphite/diamond composite film with a graphite-diamond-graphite nanostructure is obtained and shows superior electron field emission performance of low turn-on field (E0 = 4.0 V/µm) and high emission current density (J@8.8 V/µm = 13.0 mA/cm2). Our study reveal that the sharp edges, appropriate distribution density of the nanosheets, as well as good electron pathway from the bulk to the surface are the key ingredients for the electron field emission performance. This work on graphite/diamond composite films provides a new carbon source instead of methane to fabricate the emitters with high electron field emission performance, which may promote the industrial-scale application.

Hybrid Carbon Nanotubes-Graphene Nanostructures: Modeling, Formation, Characterization.

A technology for the formation and bonding with a substrate of hybrid carbon nanostructures from single-walled carbon nanotubes (SWCNT) and reduced graphene oxide (rGO) by laser radiation is proposed. Molecular dynamics modeling by the real-time time-dependent density functional tight-binding (TD-DFTB) method made it possible to reveal the mechanism of field emission centers formation in carbon nanostructures layers. Laser radiation stimulates the formation of graphene-nanotube covalent contacts and also induces a dipole moment of hybrid nanostructures, which ensures their orientation along the force lines of the radiation field. The main mechanical and emission characteristics of the formed hybrid nanostructures were determined. By Raman spectroscopy, the effect of laser radiation energy on the defectiveness of all types of layers formed from nanostructures was determined. Laser exposure increased the hardness of all samples more than twice. Maximum hardness was obtained for hybrid nanostructure with a buffer layer (bl) of rGO and the main layer of SWCNT—rGO(bl)-SWCNT and was 54.4 GPa. In addition, the adhesion of rGO to the substrate and electron transport between the substrate and rGO(bl)-SWCNT increased. The rGO(bl)-SWCNT cathode with an area of ~1 mm2 showed a field emission current density of 562 mA/cm2 and stability for 9 h at a current of 1 mA. The developed technology for the formation of hybrid nanostructures can be used both to create high-performance and stable field emission cathodes and in other applications where nanomaterials coating with good adhesion, strength, and electrical conductivity is required.

Microplasma emission performances dependent on silicon nanowires morphologies

Silicon nanowires (SiNWs) are introduced into microdischarge to improve microplasma properties due to its field emission electrons and field enhancement effect. The geometrical arrangement and dimensional features of SiNWs have desicive influence on field emission properties, thus the dependence of microplasma emission performances on the SiNWs morphologies is investigated in this paper. The different morphologies of SiNWs can be prepared by electrocatalytic metal-assisted chemical etching with varied etching currents. With the increase of etching current from 3 mA to 30 mA (AgNO3:HF:H2O2 = 0.02:4.6:0.1 mol l−1, deposition time 1 min and etching time 10 min), the field emission current density J of the SiNWs prepared at 20 mA etching current is the largest ∼0.28 mA cm−2 at a field 4.5 V μm−1, and turn-on field is the lowest of 3.52 V μm−1. Accordingly, the microplasma in the device fabricated on the SiNWs-decorated substrate (etching current at 20 mA) has the strongest average emission intensity of ∼11 565 a.u., the minimal relative standard deviation of emission intensity 4.9% and the fastest propagation velocity of 471 km s−1. The field emission electrons of SiNWs could inject more seed electrons into microcavity which causes higher electron collision probability, and the field enhancement effect at tips of SiNWs can provide more energy for the charged particles, which are helpful to the microdischarge. The most difficulty is to balance the distance of emitters and the percentage of SiNWs in entire emission region because the shielding effect will reduce while the surface emitter numbers will decrease when the distance of emitters increases. Here, a ‘proper percentage of SiNWs’ of 19.3% is obtained what indicates that if SiNWs percentage is greater than the threshold, field enhancement factor β eff is weakened by the decrease of aspect ratio and the increase of percentage. When SiNWs percentage is less than 19.3%, β eff will increase and be dominated by the percentage of SiNWs. The results are significant for the application of SiNWs in microdischarge devices.

Investigation on a Self-Breakdown Repetitive Gap Switch Based on the Graphite Electrodes With TiC Surface Modification

In this article, a self-breakdown repetitive gap switch based on the graphite electrodes with surface modified by TiC is investigated to improve the scattering of the breakdown voltage. The self-breakdown repetitive gap switch was experimentally studied with the graphite electrodes and two kinds of TiC modified graphite electrodes (hereinafter referred to as TiC-I electrodes and TiC-II electrodes). Results show that the scatterings of the breakdown voltages of the graphite, TiC-I and TiC-II electrodes were 2.49%, 1.80%, and 1.54%, respectively. Compared with the graphite electrodes, the mass losses of TiC-I and TiC-II electrodes are reduced by 50% and 68%. The influence of electrode surface morphology on the switch stability is analyzed based on the mechanism of switch conduction process. Compared with the graphite electrodes, the electric field amplification coefficients of TiC-I and TiC-II electrodes are more evenly distributed, which leads to the more evenly distributed field emission current density. Thus, the breakdown areas of TiC-I and TiC-II electrodes are smaller and the gas breakdown processes are more stable than those of the graphite electrodes, resulting in smaller scattering of the breakdown voltage. The method that decreases the scattering of the breakdown voltage and reduces the mass loss of the electrodes by modifying graphite electrodes surface can greatly improve the stability of the switch, which is of significance to the application of the switch in the compact, long time stable operation of high-power pulse power devices.

Enhanced field emission performance of Si nanopillars coated with LaB6 hats fabricated by microspheres lithography

LaB6 nanofilm is coated on the top surface of silicon nanopillars forming a field emission array (FEA). Such a structure will be referred to subsequently as a ‘LaB6 hat-coated Si-FEA’. The electron emission mechanism of the LaB6 hat-coated Si-FEA is analyzed by OPERA simulation software. It reveals that the electron emission mainly depends on the LaB6 film edge. Moreover, the LaB6 hat-coated Si-FEA sample is prepared by microsphere lithography, and the field emission properties are tested. The results show that when the anode voltage is 850 V, the field emission current density reaches 458 mA cm−2, which is in good agreement with the simulation results. This work demonstrates that the field emission cathodes with low cost, high integration and high current can be realized by using LaB6 as emitter material combined with microsphere lithography technology.

Highly enhanced field emission from vertically aligned carbon nanotubes grown on a patterned substrate via non-lithographic method

In the present work, a silicon substrate has been patterned with a gold thin film of thickness 15 nm using thermal evaporation , followed by growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition . The effect of temperature on the growth of CNTs on Au patterned substrate is studied using Raman and Field emission scanning electron microscope (SEM). A significant change in the growth of the CNTs grown on Au film patterned substrate with temperature can be observed using SEM images. However, no significant change in the micro crystallinity of the films was observed. Field emission properties of vertically aligned carbon nanotubes, grown at different temperatures, on gold film patterned substrate has been investigated. For the non-patterned substrate, for the CNT film grown at 900 °C, the current density comes out to be 8.0 mA/cm 2 @ 4.8V/μm, which increases to 14.6 mA/cm 2 in the case of CNT film grown on gold patterned substrate. The observed enhancement of nearly 180% in current density for the patterned substrate as compared to non-patterned silicon substrate is primarily attributed to the reduced electric field screening. The reduced screening is realized with the help of COMSOL simulation, showing a significant enhancement in the local electric field near edges. • Use of novel non- Lithographic technique to pattern CNT films. • Effect of temperature on the Growth of vertically aligned CNTs on patterned substrate. • Nearly 180% enhancement in Field emission current density for CNTs grown over patterned substrate at 900 °C. • Simulation based verification of enhancement in the Field emission properties due to reduced screening.

Field emission and electron beam transmission characteristics of microtips array on the (100) plane of single-crystal Gadolinium hexaboride ceramic

A field-emission microtips array with a radius of curvature, height, and separation distance of 0.5, 5, and 4 μm, respectively, was processed on the single-crystal Gadolinium hexaboride ceramic (GdB6) (100) plane using a femtosecond laser. The height and morphology of the microtips array were uniform, and the crystal structure and phase composition of GdB6 did not change after the processing. According to the field-emission performance test of a GdB6 microtips array, the turn-on electric field intensity was 1.9 V/μm, and the field-emission current density reached 0.49 A/cm2 when the applied electric field strength was 6.7 V/μm; meanwhile, it had outstanding field-emission stability. Subsequently, the transmission process of the field-emission current of the GdB6 between the cathode and the anode was simulated using COMSOL Multiphysics 5.6 software. The transmission process of the electron beam from emitters to the anode surface was divided into three stages due to the interaction between emission electrons and a magnetic field generated by its motion, including divergence, pinch, and drift. The increase of electric field strength reduced the radial displacement of the electron beam while moving the beam waist further away from the anode surface. The simulation results provide theoretical guidance for regulating the shape of the field-emission electron beam, size, and energy.