Abstract
A series of monolayer SrTiO3 films and LiF/SrTiO3 bilayer films were prepared on n-Si substrates by using vacuum electron beam vapor deposition (EBVD) technology. The morphologies and thicknesses of the SrTiO3 film and LiF film were controlled through adjustments and optimization of the growth conditions as well as deposition time. The experimental results show that the field emission performance of SrTiO3 film is significantly improved after LiF film is added. Under the research conditions in our laboratory, a large number of LiF/SrTiO3 bilayer film field emission devices have been tested and analyzed in the wide range of LiF film thickness (10–300 nm), and the effective field emission LiF film thickness (50–90 nm) was initially determined. Further study shows that the LiF/SrTiO3 bilayer film has the best field emission performance when the optimal LiF film thickness is 70 nm, and its maximum field emission current density can reach 305.48 μA/cm2. The field emission current density of the LiF/SrTiO3 bilayer thin film device is nearly 4 times compared to that of the monolayer SrTiO3 film when the applied electric field intensity reaches 9.05 V/μm. All the field emission devices exhibit excellent functioning stability and experimental reproducibility.
Published Version
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