Performance Of Field-effect Transistors Research Articles

Interfacial Engineering of Degenerately Doped V0.25Mo0.75S2 for Improved Contacts in MoS2 Field Effect Transistors

Abstract2D transition‐metal dichalcogenide semiconductors such as MoS2 are identified as a platform for next‐generation electronic circuitries. However, the progress toward industrial applications is still lagging due to imperfections of wafer‐scale deposition techniques and in‐contact parasitic impedance affecting device integration in large circuits and systems. Here, on contact engineering of large‐scale, chemical vapor deposition (CVD) grown monolayer MoS2 films is reported, leading to improved performance of field effect transistors. The transistor performance of monolayer pure MoS2 is initially characterized by its ION/IOFF ratio (106), carrier density (≈1012 cm−2), and mobility (≈10 cm2 Vs−1), and the Schottky barrier height (SBH) of conventional metallic Au contact of MoS2 (≈215 meV). Then, a CVD‐grown degenerately‐doped monolayer of alloy V0.25Mo0.75S2 is introduced between Au and MoS2 of a modified transistor, reducing the SBH to ≈100 meV. The reduced contact resistance (≈50%) of the device with an atomically thin contact interface complies with the theoretical model and is free from Fermi‐level pinning effects. It is resilient to the high temperatures that are characteristic of physical metallization methods and is readily scalable.

The Influence of Alkyl Spacers and Molecular Weight on the Charge Transport and Storage Properties of Oxy-Bithiophene-Based Conjugated Polymers.

Conjugated polymers (CPs) with polar side chains can conduct electronic and ionic charges simultaneously, making them promising for bioelectronics, electrocatalysis and energy storage. Recent work showed that adding alkyl spacers between CP backbones and polar side chains improved electronic charge carrier mobility, reduced swelling and enhanced stability, without compromising ion transport. However, how alkyl spacers impact polymer backbone conformation and, subsequently, electronic properties remain unclear. In this work, we design two oxy-bithiophene-based CP series, each featuring progressively extended alkyl spacer lengths and two distinct molecular weight (MW) distributions. Using operando characterisations, we evaluate the (spectro)electrochemical and swelling properties of the polymer thin films, and their performance in organic field-effect transistors and organic electrochemical transistors. Surprisingly, alkyl spacers negatively impact the hole mobility of our polymers, with higher MW amplifying this effect. Using molecular dynamics simulations, we show that it is thermodynamically favourable for adjacent non-polar alkyl spacers to aggregate in polar electrolytes, leading to backbone twisting. Further spectroscopic measurements corroborate this prediction. Our findings demonstrate the active interactions between side chain structure, MW and electrolyte/solvent polarity in influencing polymer performance, underscoring the importance of considering solvation environment effects on polymer conformation when designing new mixed conducting CPs for electrochemical applications.

Two Is Better than One: How the Addition of Multiple Biodegradable Polymers Can Improve Organic Thin-Film Transistor Performance.

Developing sustainable electronics requires using materials that are either recyclable or biodegradable, without compromising on electrical performance. Here, we introduce a solution-processed biodegradable polymer blend consisting of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) and different mixtures of two biodegradable polymers, polycaprolactone (PCL) and polylactic acid (PLA). We find that controlling the ratio of components enables a reduction in semiconductor polymer loading (∼70:80% reduction) while maintaining or improving field-effect transistor performance. At a ratio of 30 wt % DPP2T versus 70 wt % PLA and PCL (56:14 ratio), DPP2T self-assembled and crystallized inside the biodegradable polymer matrix, exhibiting a high field-effect mobility (0.18 cm2 V-1 s-1), a reduced threshold voltage (∼17 V), and a high on/off ratio (∼106). This study demonstrates that performance does not need to be sacrificed for biodegradability.

Bundling effect of semiconductor-enriched single-walled carbon nanotube networks on field-effect transistor performance

Despite continual progress in creating semiconductor-enriched single-walled carbon nanotube (SWCNT) networks, significant challenges still remain in achieving electronically homogeneous channels for field-effect transistors (FETs) due to persisting metallic percolation and uncontrollable nanotube bundling. To address this critical issue, we systematically explored the bundling effect of the SWCNTs on the electrical characteristics of SWCNT network-based FETs. Devices with higher bundle density and larger bundles showed enhanced FET metrics in drive current, on/off ratio, subthreshold swing, transconductance, and thermal dependence, thereby enabling highly uniform and integrated SWCNT FETs at wafer scale. These performance enhancements are attributed to the increased conduction channels, the metallic CNT shielding effect in dense, thick, and locally aligned SWCNT bundles, and enhanced contact properties. Additionally, SWCNT network-based FETs were demonstrated as biosensors to detect the influenza A H5N1 virus. Larger bundles and higher densities of SWCNT improved sensing performance due to enhanced semiconducting properties and the metallic screening effect within the bundles.

Large-Scale Patterning and Polymorph Transition of Conjugated Polymers via Meniscus-Guided Deposition for Field-Effect Transistors.

The ability to craft patterned conjugated polymers and simultaneously induce polymorph transitions within these patterns is important for various organic semiconductor devices. However, simple and straightforward routes to achieving both desirable characteristics remain a grand challenge. Herein, we report an effective meniscus-guided deposition (MGD) strategy to generate highly ordered, periodic microscopic patterns (i.e., dots and stripes) in poly(3-hexylselenophene) (P3HS) and enable a polymorph transition within these stripe arrays. Specifically, the P3HS solution is contained within the gap of two nearly parallel plates, and the MGD method renders the deposition of P3HS into large-scale, periodic patterns through a repetitive stop-and-move process of the meniscus. Dots and stripe arrays are crafted depending on the P3HS solution concentration. Interestingly, with the increased MGD speed, the transition from polymorph II to polymorph I was completed within the stripe arrays. The organic field-effect transistor performance pinpoints a significant relationship between different P3HS stripe arrays and their charge transport characteristics. The MGD strategy to efficiently produce P3HS patterns and induce polymorph transition is readily adaptable to other conjugated polymers for diverse optoelectronic applications.

Effect of Alkyl Side Chain Length on Electrical Performance of Ion-Gel-Gated OFETs Based on Difluorobenzothiadiazole-Based D-A Copolymers.

The performance of organic field-effect transistors (OFETs) is highly dependent on the dielectric-semiconductor interface, especially in ion-gel-gated OFETs, where a significantly high carrier density is induced at the interface at a low gate voltage. This study investigates how altering the alkyl side chain length of donor-acceptor (D-A) copolymers impacts the electrical performance of ion-gel-gated OFETs. Two difluorobenzothiadiazole-based D-A copolymers, PffBT4T-2OD and PffBT4T-2DT, are compared, where the latter features longer alkyl side chains. Although PffBT4T-2DT shows a 2.4-fold enhancement of charge mobility in the SiO2-gated OFETs compared to its counterpart due to higher crystallinity in the film, PffBT4T-2OD outperforms PffBT4T-2DT in the ion-gel-gated OFETs, manifested by an extraordinarily high mobility of 17.7 cm2/V s. The smoother surface morphology, as well as stronger interfacial interaction between the ion-gel dielectric and PffBT4T-2OD, enhances interfacial charge accumulation, which leads to higher mobility. Furthermore, PffBT4T-2OD is blended with a polymeric elastomer SEBS to achieve ion-gel-gated flexible OFETs. The blend devices exhibit high mobility of 8.6 cm2/V s and high stretchability, retaining 45% of initial mobility under 100% tensile strain. This study demonstrates the importance of optimizing the chain structure of polymer semiconductors and the semiconductor-dielectric interface to develop low-voltage and high-performance flexible OFETs for wearable electronics applications.

Optimizing Light Sensing Capabilities of WSe2 FETs through Chemical Modulation of Carrier Dynamics

Two-dimensional semiconductor materials demonstrate interesting electronic and optoelectronic properties, which can be further modulated through chemical doping to control carrier concentration and enhance device performance. This study explores the doping process of a few-layer thin WSe2 using FeCl3 solution as a dopant. We perform a thorough characterization utilizing Raman analysis and electrical testing to validate the doping of WSe2. The investigations reveal the p-type doping effect and a notable rise in hole concentration, further elucidated via the energy band diagram. Additionally, the WSe2 field-effect transistor (FET) operation is investigated under illumination with light of different wavelengths ranging from 220 nm to 514 nm both before and after doping. Following p-type doping, the device exhibited a notable increase in current, indicative of improved performance in photodetection. The responsivity and external quantum efficiency (EQE) are improved significantly after doping. This research confirms the effectiveness of p-type doping in WSe2 and highlights its impact in enhancing the electronic and optoelectronic characteristics of WSe2 devices. The results underscore the potential for advancing electronic and optoelectronic applications through such enhancements.

High Quality Carbon Nanotube Thin Films for Transistor Application

Semiconducting carbon nanotubes (s-CNTs) are promising channel materials for both high-performance ultra-scaled field-effect transistors (FETs) and thin film transistors (TFTs) due to their excellent electronic properties. Many research groups have demonstrated the application of s-CNTs in either logical computing circuits or large area electronics. However, before the CNT-based electronics technology takes real impact, many challenges should be overcome, such as achieving high purity of s-CNTs, reliable methods for their deposition and alignment, development of scalable and cost-effective production techniques, and corresponding quality characterization metrology. In this presentation, we will report our progress on the s-CNT materials and their application for FETs and TFTs.Conjugated polymer wrapping method was used to extract s-CNTs from the raw CNT materials. We have developed a closed-loop recycling strategy, in which raw materials (CNTs and polymers) and solvents were all recycled and reused for multiple separation cycles, thus high-purity (99.9999%) and high structural quality s-CNTs were mass produced. The cost was reduced to ~ 1% in comparison with commercially available products, and total yield was increased to 36% in comparison with 2%–5% of usual separation methods.Highly unform and density-controllable thin films of random-oriented CNTs (R-CNTs) were fabricated by a dip-coating method on 4-inch/8-inch Si wafers and 2.5th generation (G2.5) backplane glasses (370 mm × 470 mm). Ultra-clean wafer-scale aligned s-CNTs (A-CNTs) were fabricated by a modified dimension-limited self-alignment (m-DLSA) method. To quantify the overall quality of both R-CNT and A-CNT films, we proposed a four-parameter metrology which includes the local tube density (DL), global density uniformity (Cv), local degree of order (OL), and the relative tube proportion in a certain orientation (Pθ) at a location. The four-parameter metrology is not only powerful for overall quality evaluation of CNT films, but also able to predict the performance fluctuation of fabricated devices.TFTs fabricated using the R-CNTs show mobility of 45-55 cm2/Vs with a high-performance uniformity (Cv ≈ 11%–13%) on a 4-inch wafer. A micro-LED display with 32×32 pixels were driven successfully by 2T1C AMTFT back plane based on R-CNT TFTs. Top-gated FETs based on A-CNTs exhibit excellent electronic performance with an on-state current (Ion) of 2.2 mA/μm, peak transconductance (gm) of 1.1 mS/μm, low contact resistance (Rc) of 191 Ω•μm and negligible hysteresis, among the best reported performance of CNT FETs. We believe our progress in the s-CNT materials will greatly push the CNT-based electronics technology into practical applications.

Influence of the Chemical Structure of Perylene Derivatives on the Performance of Honey-Gated Organic Field-Effect Transistors (HGOFETs) and Their Application in UV Light Detection.

Electronics based on natural or degradable materials are a key requirement for next-generation devices, where sustainability, biodegradability, and resource efficiency are essential. In this context, optimizing the molecular chemical structure of organic semiconductor compounds (OSCs) used as active layers is crucial for enhancing the efficiency of these devices, making them competitive with conventional electronics. In this work, honey-gated organic field-effect transistors (HGOFETs) were fabricated using four different perylene derivative films as OSCs, and the impact of the chemical structure of these perylene derivatives on the performance of HGOFETs was investigated. HGOFETs were fabricated using naturally occurring or low-impact materials in an effort to produce sustainable systems that degrade into benign end products at the end of their life. It is shown that the second chain of four carbons at the imide position present in perylenes N,N'-bis(5-nonyl)-perylene-3,4,9,10-bis(dicarboximide) (PDI) and N,N'-bis(5-nonyl)-1-naphthoxyperylene-3,4,9,10-bis(dicarboximide) (PDI-ONaph) reduces π-stacking interaction in the active layer, leading to lower AC conductivity and the non-functionality of HGOFETs. On the other side, the chain-on molecular orientation in the film of N,N'-dibutylperylen-3,4:9,10-bis(dicarboximide) (BuPTCD) was fundamental for the efficiency of HGOFETs, showing a better performance than the HGOFETs of N,N'-bis(2-phenylethyl)-3,4:9,10-bis(dicarboximide) (PhPTCD), which has a face-on molecular orientation. Finally, the HGOFETs of BuPTCD and PhPTCD are good candidates as UV light detectors and are used for the detection of UV radiation.

High-Fidelity Transfer of 2D Semiconductors and Electrodes for van der Waals Devices.

As traditional silicon-based materials almost reach their limits in the post-Moore era, two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been regarded as next-generation semiconductors for high-performance electrical and optical devices. Chemical vapor deposition (CVD) is a widely used technique for preparing large-area and high-quality TMDCs. Yet, it suffers from the challenge of transfer due to the strong interaction between 2D materials and substrates. The traditional PMMA-assisted wet etching method tends to induce damage, wrinkles, and inevitable polymer residues. In this work, we propose an etch-free and clean transfer method via a water intercalation strategy for TMDCs, ensuring a high-fidelity, wrinkle-free, and crack-free transfer with negligible residues. Furthermore, metal electrodes can also be transferred via this method and back-gate field-effect transistors (FETs) based on CVD-grown monolayer WSe2 with van der Waals (vdW) metal/semiconductor contacts are fabricated. Compared to the PMMA-assisted transfer method (∼1.2 cm2 V-1 s-1 hole mobility with ∼2 × 106 ON/OFF ratio), our high-fidelity transfer method significantly enhances the electrical performance of WSe2 FET over one order of magnitude, achieving a hole mobility of ∼43 cm2 V-1 s-1 and a high ON/OFF ratio of ∼5 × 107 in air at room temperature.

NEXAFS spectroscopy of alkylated benzothienobenzothiophene thin films at the carbon and sulfur K-edges.

Alkylated benzothienobenzothiophenes are an important class of organic semiconductors that exhibit high performance in solution-processed organic field-effect transistors. In this work, we study the near-edge x-ray absorption fine-structure (NEXAFS) spectra of 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) at both the carbon and sulfur K-edges. Angle-resolved experiments of thin films are performed to characterize the dichroism associated with molecular orientation. First-principles calculations using the density functional theory-based many-body x-ray absorption spectroscopy (MBXAS) method are also performed to correlate the peaks observed and their dichroism with transitions to specific antibonding molecular orbitals. Interestingly, the dichroism of the dominant, lowest energy peak is opposite at the carbon and sulfur K-edges. While the low-energy peak at the carbon K-edge is assigned to carbon 1s → π* transitions with transition dipole moment (TDM) perpendicular to the planar BTBT core, the dominant low energy peak at the sulfur K-edge is assigned to sulfur 1s → σ* transitions with TDM oriented along the long axis of the BTBT core. These differences at the sulfur and carbon K-edges are understood through the MBAXS simulations that find a reordering of the energy of the lowest energy π* and σ* transitions at the sulfur K-edge due to the strong localization of the σ* orbital over the sulfur atom. This work highlights differences in the NEXAFS spectra of organic semiconductors at carbon and sulfur K-edges and provides new insights into peak assignment and x-ray dichroism relevant for studying the molecular orientation of organic semiconductor films.

High-performance cold-source field-effect transistors based on Cd3C2/ boron phosphide heterojunction

To overcome the short-channel effect and large gate leakage current in the field-effect transistors (FETs), some cold-source materials have been suggested as alternative materials. We explore the performance of FET based on the cold-source material Cd3C2 using the ab initio quantum transport method. It is shown that the figure of merits (FOMs) of Cd3C2/ Boron phosphide (BP) FET satisfies the requirements of ITRS2028 HP for UL=2 and UL=3nm. The performance of Cd3C2/BP FET is improved when Cd3C2 is p-type doped. Doping causes a super-exponential decrease in carrier concentration, thus the cold-source FET based on Cd3C2/BP is formed. When the doping concentration reaches 10.0 × 1013cm−2, the device satisfies the requirements of ITRS2028 HP. More importantly, at the doping concentration of 10.0 × 1013cm−2 for UL=2 and 3 nm, the subthreshold swings are 52.32 and 56.84 mV/dec, which are lower than 60 mV/dec. This work proposes a new cold-source FET based on Cd3C2/BP, whose excellent performance can make it a competitive candidate in future electronic devices.

High-throughput screening and machine learning classification of van der Waals dielectrics for 2D nanoelectronics

Van der Waals (vdW) dielectrics are promising for enhancing the performance of nanoscale field-effect transistors (FETs) based on two-dimensional (2D) semiconductors due to their clean interfaces. Ideal vdW dielectrics for 2D FETs require high dielectric constants and proper band alignment with 2D semiconductors. However, high-quality dielectrics remain scarce. Here, we employed a topology-scale algorithm to screen vdW materials consisting of zero-dimensional (0D), one-dimensional (1D), and 2D motifs from Materials Project database. High-throughput first-principles calculations yielded bandgaps and dielectric properties of 189 0D, 81 1D and 252 2D vdW materials. Among which, 9 highly promising dielectric candidates are suitable for MoS2-based FETs. Element prevalence analysis indicates that materials containing strongly electronegative anions and heavy cations are more likely to be promising dielectrics. Moreover, we developed a high-accuracy two-step machine learning (ML) classifier for screening dielectrics. Implementing active learning framework, we successfully identified 49 additional promising vdW dielectrics. This work provides a rich candidate list of vdW dielectrics along with a high-accuracy ML screening model, facilitating future development of 2D FETs.

III–V heterostructure tunnel field-effect transistor operation at different temperature regimes

Tunnel field-effect transistors (TFETs) are a potential alternative to MOSFETs for low-temperature electronics. We provide an in-depth experimental characterization of TFETs analyzing the fundamental physical behavior at different temperature regimes. TFET characteristics from 13 to 300 K both in forward and reverse bias are discussed by employing a variation in InAs/InGaAsSb/GaSb heterojunction vertical nanowire devices. Evaluation of the TFET Negative Differential Resistance (NDR) characteristics at different temperatures is established as a technique to probe the dopant incorporation. It is observed that the temperature dependence of the Fermi degeneracy and Fermi-Dirac distribution largely influences the transistor performance at each operating temperature. Our investigation reveals that the TFETs demonstrate lower subthreshold swing than the physical limit of MOSFETs above 125 K. For low-temperature applications, the devices can be operated down to a low operating bias of 0.1 V, while for high temperature, a larger bias of 0.3 V is preferred.

Enhanced Performance of Dual Material Double Gate Negative Capacitance Tunnel Field Effect Transistor (DMDG‐NC‐TFET) via HZO Ferroelectric Integration for Improved Drain Current and Subthreshold Swing

ABSTRACTThis paper developed the novel structure of a dual material double gate negative capacitance tunnel field effect transistor (DMDG‐NC‐TFET) using HZO ferroelectric material. This study systematically improved the drain current and subthreshold swing (SS) by inducing a negative capacitance effect in a gate stack. The proposed gate oxide structure is a stack configuration of ferroelectric material, and high‐k dielectric to improve gate control. The Landau–Khalatnikov (LK) equation is used to solve the Poisson equation and get an accurate estimate of the channel potential. Kane's model is used for band‐to‐band generation rate calculation. For modelling the drain current, the band‐to‐band tunnelling (Gbtbt) generation rate is integrated using the entire device volume. The impact of varying ferroelectric thickness in the proposed structure has been investigated with the simulated results. The outcomes demonstrate that the device can obtain better improvements in ON current and SS, compared to conventional DMDG‐TFET. By contrasting the analytical results with the outcomes of the TCAD simulation, the effectiveness of the proposed methodology has been demonstrated.

Computational study of bilayer armchair graphene nanoribbon tunneling field-effect transistors for digital circuit design

This study investigates the effects of a structural defect, specifically a single vacancy (SV), on the performance of bilayer armchair graphene nanoribbon tunnel field-effect transistors (BL-AGNR TFETs). Simulations are conducted using the Non-Equilibrium Green's Function (NEGF) formalism and the tight-binding Hamiltonian, along with a self-consistent solution of the Poisson and Schrödinger equations, to evaluate key performance parameters, including subthreshold swing (SS), ON-current (ION), OFF-current (IOFF), and the ON/OFF-current ratio (ION/IOFF). The results indicate that single vacancies have a negligible effect on ON-current (ION) but cause a significant increase in OFF-current (IOFF) and subthreshold swing (SS), leading to a degradation in the ION/IOFF ratio and overall switching performance. The subthreshold swing (SS) for a defect-free transistor is 65 mV/dec; however, in the presence of a single vacancy located near the source or in the middle of the channel, the SS increases to 97 mV/dec and 75 mV/dec, respectively. This study highlights the negative impact of structural defects on TFET performance and emphasizes the importance of precise device engineering to enhance performance in the presence of defects.

Developments and Applications of Field-Effect Transistor

This review article delves into the development and future prospects of Field-Effect Transistors (FETs), tracing their evolution from the nascent theoretical concept proposed by Julius Lilienfeld in 1925. Over the years, FETs have traversed significant milestones, marking their progression from fundamental ideas to practical applications. Key among these milestones are the advent of the Metal-Oxide-Semiconductor FET (MOSFET), which revolutionized the electronics industry, the Fin FET, offering enhanced performance through three-dimensional structures, and the GateAll-Around FET (GAA-FET), promising even greater control and efficiency. It provides a systematic comparison of these technologies, dissecting their structural differences, evaluating performance metrics such as speed, power consumption, and scalability, and exploring their potential applications across diverse domains. While recent advancements in FET technology have primarily focused on structural innovations to mitigate the short channel effect, researchers are also actively exploring alternative avenues, including the use of novel materials and refined fabrication techniques, to further enhance FET performance and unlock new possibilities for electronic devices. This multifaceted approach underscores the dynamic and ever-evolving nature of FET technology, positioning it as a cornerstone for future advancements in electronics.

The Effect оf Laser Radiation оn Functional Properties of MOS Structures

The electrophysical properties of instrument MOSFET structures (capacitor, field-effect transistor with an isolated gate and an induced channel, CMOS integrated circuit) when exposed to unmodulated laser radiation are studied. Static and dynamic characteristics were measured. The theoretical study was carried out using the developed SPICE models and numerical experiments. An expression is obtained for the volt-ampere characteristic of a field-effect transistor operating in a mode with constant optical illumination. It is shown that the characteristics of the structures are determined by the generation and recombination of nonequilibrium charge carriers, the field effect, the photovoltaic effect in p—n junctions, the photo-Dember effect and tunneling of charge carriers through a gate dielectric. The results of the work are of interest from the point of view of creating high-speed transistors and integrated circuits of a new type.

Exchange-enhanced spin-orbit splitting and its density dependence for electrons in monolayer transition metal dichalcogenides

We show that spin-orbit splitting (SOS) in monolayers of semiconducting transition metal dichalcogenides (TMDs) is substantially enhanced by an electron-electron interaction. This effect, similar to the exchange enhancement of the electron g factor, is most pronounced for conduction band electrons (in particular, in MoS2), and it has a nonmonotonic dependence on the carrier sheet density n. That is, the SOS enhancement is peaked at the onset of filling of the higher-energy spin-split band by electrons, n*, which also separates the regimes of slow (at n<n*) and fast (for n>n*) spin and valley relaxation of charge carriers. Moreover, this density itself is determined by the enhanced SOS value, making the account of exchange renormalization important for the analysis of the spintronic performance of field-effect transistors based on two-dimensional TMDs. Published by the American Physical Society 2024

Thermal, mechanical, and electrical properties of Si-stacked nanosheet transistors using machine learning interatomic potentials

Thermal and mechanical properties play a key role in optimizing the performance of nanoelectronic devices. In this study, the lattice thermal conductivity (κL) and elastic constants of Si nanosheets at different sheet thicknesses were determined using recently developed machine learning interatomic potentials (MLIPs). A Si nanosheet with a minimum thickness of 10 atomic layers was used for model training to predict the properties of sheets with greater thicknesses. The training dataset was efficiently constructed using stochastic sampling of the potential energy surface (PES). Density functional theory (DFT) calculations were used to extract
the MLIP, which served as the basis for further analysis. The Moment Tensor Potential (MTP) method was used to obtain the MLIP in this study. The results showed that, at sub-6 nm sheet thickness, the thermal conductivity dropped to ∼ 7 % of its bulk value, whereas some stiffness tensor components dropped to ∼ 3 % of the bulk values. These findings contribute to the understanding of heat transport and mechanical behavior of ultrathin Si nanosheets, which is crucial for designing and optimizing nanoelectronic devices. The technological implications of the extracted parameters on nanosheet field-effect transistor (NS-FET) performance at advanced technology nodes were evaluated using TCAD device simulations.