Performance Of Field-effect Transistors Research Articles

Enhancing the electrical performance of InAs nanowire field-effect transistors by improving the surface and interface properties by coating with thermally oxidized Y2O3.

Due to their excellent electrical characteristics, InAs nanowires (NWs) have great potential as conducting channels in integrated circuits. However, the surface effect and loose native oxide coverage can deteriorate the performance of InAs NW transistors. Y2O3, a high-k dielectric with low Gibbs free energy, has been proposed to modify the InAs NW surface. Here, we systematically investigate the effect of Y2O3 coating on the performance of InAs NW field-effect transistors (FETs). We first explore the influence of the thermal oxidation process of Y2O3 on the performance of back-gated FETs. We then observe that the coverage of Y2O3/HfO2 bilayers on the NW decreases the hysteresis (the smallest value reaches 0.1 V), subthreshold swing (SS, down to 169 mV dec-1) and on-state resistance Ron, and increases the field-effect mobility μFE (up to 4876.1 cm2 V-1 s-1) and the on-off ratio, mainly owing to the passivation effect on the NW surface. Finally, paired top-gated NW FETs with a Y2O3/HfO2 bilayer and a single layer of HfO2 dielectric are fabricated and compared. The Y2O3/HfO2 bilayer provides better gate control (SSmin = 113 mV dec-1) under a smaller gate oxide capacitance, with an interface trap density as low as 1.93 × 1012 eV-1 cm-2. The use of the Y2O3/HfO2 stack provides an effective strategy to enhance the performance of III-V-based transistors for future applications.

Device-Simulation-Based Machine Learning Technique for the Characteristic of Line Tunnel Field-Effect Transistors

With the rapid growth of the semiconductor manufacturing industry, it has been evident that device simulation has been considered a sluggish process. Therefore, due to downscaling of semiconductor devices, it is significantly expensive to obtain the inevitable device simulation data because it requires complex analysis of various factors. To develop a competent technique to analyze the performance of the line tunnel field-effect transistors (TFETs), the 3-D stochastic device simulation is integrated with a machine learning (ML) algorithm, named random forest regressor (RFR). Despite producing tremendous researches by the RFR model in the field of computer vision, the adoption of these ML algorithms in the field of the semiconductor industry has a lot of margin for progress. The ML-based RFR model is exploited to predict the effect of variability sources of line TFET under different biasing conditions. Results are promising and reducing the computational cost of device simulation by 99%. The prediction of effect of source variation is less than 1% as compared to the device simulation of line TFET. The application of the RFR on the line TFET device exhibits the power and flexibility of this approach because its evaluation with different bias conditions shows outstanding results.

Improving performance of monolayer arsenene tunnel field-effect transistors by defects.

We systematically investigate the transport properties of monolayer arsenene tunneling field-effect transistors (TFETs) along the armchair and zigzag directions using first-principles calculations based on density functional theory (DFT) combined with the non-equilibrium Green's function (NEGF) approach. We introduce five types of defects at the source-channel interface and study their influences on the device performance. The pristine arsenene TFETs along the armchair direction have large ON-state currents due to the small effective masses, but still cannot meet the International Technology Roadmaps of Semiconductor 2022 (ITRS 2022) requirements for high performance (HP) devices. The adsorption of one and two H atoms can significantly enhance the ON-state currents to above 1412 μA μm−1 and reduce subthreshold swing (SS) to below 60 mV decade−1 for both n- and p-type devices, satisfying the ITRS 2022 requirements for HP devices. Besides, the p-type As and the n-type Li adatoms can improve the performance of p-type and n-type devices, respectively. The pristine arsenene TFETs along the zigzag direction with low ON-state currents already meet the ITRS 2022 requirements for low-power (LP) devices. The performance of the p-type TFETs as LP devices can be improved by p-type SV and the As adatom by increasing the ON-state currents and/or reducing the SS. On the other hand, the adsorption of one H adatom can remarkably increase the ON-state current of the p-type TFET to 1563 μA μm−1 and reduce SS to 34 mV decade−1, allowing the device to work as an HP device. We further confirm that the enhancement of the ON-state currents is due to the shortening of the band-to-band tunneling path through the defect induced gap states. Our calculations provide a theoretical guide to improve the performance of TFETs based on arsenene or other monolayer materials by suitable defects.

Fabrication and characterization of P3HT --- based OFETs with TPU --- polymeric gate dielectric prepared by electrospinning method with different thicknesses

Current work reports the manufacturing and electrical characteristics of organic field-effect transistors in the top-contact bottom-gate configurations utilizing solution - processed poly (3-hexylthiophene) films as an active semiconducting layer and thermoplastic polyurethane as gate insulator. A spin coating chemical polymerization technology and an electrospinning tool for polymeric mats production were used to prepare uniform organic thin films with controlled thickness from their solutions. Commercially available flat glass slides were used as the starting substrate. To form the gate electrode a thin layer of metal such as gold (Au) or silver (Ag) was deposited on the glass surface substrates by thermal evaporation through a shadow mask. Thermoplastic polyurethane insulating films with different thicknesses were electrospun from precursor solution on the substrates with Au or Ag electrodes. Patterned Au and/or Ag drain and source electrodes were deposited directly on the surface of as - fabricated poly(3-hexylthiophene) organic semiconductor layer. We used two kinds of metals that have different work functions and their combinations to investigate the influence of the source, drain and gate electrode materials on the output characteristics of fabricated organic thin film transistors. All fabricated of organic field-effect transistor devices showed typical p-type channel characteristics. Additionally, the effects of thermoplastic polyurethane gate dielectric thickness as well as the influence of processing parameters on electrical performances of organic field-effect transistors fabricated were also investigated. Results show that all developed transistors exhibit good and stable performance up to a relatively high drain voltage of ~50 V and the drain-source current up to ~0.5 μA. Keywords: organic field-effect transistors, P3HT organic semiconductor, TPU gate dielectric, electrical characteristics.

Impact of interface trap charge and temperature on the performance of epitaxial layer tunnel field effect transistor

A simulation study of the impact of interface traps on the performance of the Epitaxial Layer Tunnel Field Effect Transistor (ETLTFET) having Si(1-x)Gex as source material is investigated in terms of interface Trap distribution, energies, random trap fluctuation (RTF), and temperature in comparison with FinFET. The study revealed a similar trend of Vth shift for ETLTFET and FinFET for a given trap type. For both ETLTFET and FinFET, the donor interface trap with energy above the semiconductor mid band gap can cause a shift in ION as well as IOFF, while the acceptor interface trap has a comparatively wider energy range. Again, trap induced SS degradation is minor in ETLTFET than its counterparts. In the case of RTF in nano-scaled devices, the fluctuations in ION and Vth induced by interface traps are found to vary with the position of the trap, and the variations at ETLTFET are relatively more minor than the FinFET. Furthermore, the presence of interface trap charges alters the device's temperature sensitivity which could be detrimental for the device to be utilized in sensor applications.

Bandstructure and Size-Scaling Effects in the Performance of Monolayer Black Phosphorus Nanodevices.

Nanodevices based on monolayer black phosphorus or phosphorene are promising for future electron devices in high density integrated circuits. We investigate bandstructure and size-scaling effects in the electronic and transport properties of phosphorene nanoribbons (PNRs) and the performance of ultra-scaled PNR field-effect transistors (FETs) using advanced theoretical and computational approaches. Material and device properties are obtained by non-equilibrium Green’s function (NEGF) formalism combined with a novel tight-binding (TB) model fitted on ab initio density-functional theory (DFT) calculations. We report significant changes in the dispersion, number, and configuration of electronic subbands, density of states, and transmission of PNRs with nanoribbon width (W) downscaling. In addition, the performance of PNR FETs with 15 nm-long channels are self-consistently assessed by exploring the behavior of charge density, quantum capacitance, and average charge velocity in the channel. The dominant consequence of W downscaling is the decrease of charge velocity, which in turn deteriorates the ON-state current in PNR FETs with narrower nanoribbon channels. Nevertheless, we find optimum nanodevices with W > 1.4 nm that meet the requirements set by the semiconductor industry for the “3 nm” technology generation, which illustrates the importance of properly accounting bandstructure effects that occur in sub-5 nm-wide PNRs.

Influence of π-Endcaps on the Performance of Functionalized Quinolines for p-Channel OFETs.

This study investigates the influence of aryl and ethynyl linkers as well the effect of various pi-end-groups on the performance of the quinoline-based organic field-effect transistors. A series of new functionalized quinolines with D-π-A-π-D and A-π-A-π-A architectures are designed and synthesized via the Sonagashira cross-coupling reaction. All the new compounds are well characterized and their photophysical properties are studied. The bottom gate-top contact-organic field-effect transistors devices are fabricated using the spin-coating technique. By employing the pre and post-annealing technique, films with uniform surface coverage are obtained. The variation in the end-groups results in versatile packing arrangements which determine their good charge transport properties. The p-channel transistor behavior is observed for all the new compounds. Among the molecules studied, methoxyphenyl and thiophen-2-yl terminal functionalized with D-π-A-π-D architecture exhibit the higher p-channel transistor characteristics with hole mobilities of 1.39 and 1.33 cm2 V-1 s-1 , respectively. The good charge carrier mobilities are supported by an electron-donating methoxy group and thiophene as the end-groups with high highest occupied molecular orbitals (HOMO) and lowest unoccupied molecular orbitals (LUMO) levels, extensive π-conjugation, and better self-assembly.

High breakdown voltage of boron-doped diamond metal semiconductor field effect transistor grown on freestanding heteroepitaxial diamond substrate

We report the results of a device performance of a boron-doped diamond metal semiconductor field effect transistor (MESFET) grown on a heteroepitaxial diamond substrate using microwave plasma chemical vapor deposition. The 120 nm-thick lightly boron-doped p-type diamond layer indicates sheet resistance of 6 GΩ/sq. at room temperature (RT). A two-terminal buffer leakage test with pad distance of 10 μm shows that a heteroepitaxial grown diamond substrate withstands more than 3 kV. The fabricated device with gate–drain distance (Lgd) of 10 μm exhibits a drain current density (Id) of 66 nA/mm (gate voltage (Vsg) 0.5 V, drain voltage (Vds) 30 V, and at RT), and at 463 K, the Id increases to 9.4 μA/mm. The device with Lgd of 30 μm shows a high breakdown voltage of −2360 V at RT, and at 463 K, breakdown voltage reduces to −515 V owing to an increase in leakage current. A benchmark on breakdown voltage vs. on-resistance reveals that our breakdown result at RT is the highest value ever reported for a bulk p-doped diamond FETs.

The Syntheses, Characterization and Field Effect Transistor Performance of Thiazole‐Based Dicyanomethylene‐Endcapped Quinoidal Compounds

AbstractThiazole‐based dicyanomethylene‐endcapped quinoidal compounds, QBTzTT8, QBTzTT16 and QBTzTT24 with different length of alkyl chains, were designed and synthesized. These compounds exhibit a relative low LUMO energy level of −4.55 eV, and can spontaneously react with metals Ag and Cu to form charge transfer complexes which is evidenced by Raman spectra, Infrared spectra and color change. Thin film transistors of QBTzTT16 and QBTzTT24 are fabricated, and metals Ag, Cu and Au are used as source‐drain electrodes. The devices display typical n‐type transistor performance. The mobility of devices shows nearly non‐dependent on source‐drain electrodes, being attributed to the spontaneously formed ultrathin charge‐transfer complex layer at the semiconductor/Cu (Ag) electrode interface. The average electron mobilities of QBTzTT16 and QBTzTT24 are 4.7×10−2 cm2 V−1 s−1 and 6.8×10−2 cm2 V−1 s−1, respectively.

Performance Investigation of p-FETs Based on Highly Air-Stable Monolayer Pentagonal PdSe2

Pentagonal PdSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is a promising candidate for layered electronic devices due to its high air stability and anisotropic transport properties. Here, we investigate the performance of p-type field-effect transistors (p-FETs) based on PdSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> monolayer using a multiscale simulation framework combining density functional theory and quantum transport. We find that monolayer PdSe <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> devices show excellent switching characteristics (< 65 mV/dec) for the source-drain direction aligned along both [010] and [100] directions. Both directions also show good ON-state current and large transconductance though these are larger along the [010] direction for a 15-nm channel device. The channel length scaling study of these p-FETs indicates that the channel length can be easily scaled down to 7 nm without any significant compromise in the performance. Going below 7 nm, we find that there is a severe degradation in the subthreshold swing for a 4-nm channel length. However, this degradation can be minimized by introducing an underlap structure. The length of underlap is determined by the trade-off between the ON-state current and the switching performance.

Operation of Diamond Solution-Gated Field-Effect Transistor in the Frequency Domain

Here, the effect of frequency-domain sensing with diamond solution-gated field-effect transistors (SGFET) was investigated, where a sine wave with different frequencies (3, 30, 300, and 3 kHz) was applied at the gate. Variation of the power spectral density (PSD) amplitudes of the drain-source current was examined by using the NaCl gate electrolyte with various concentrations. With the increase of NaCl concentration, the PSD amplitudes basically increase for hydrogen-terminal diamond SGFET, however, the change of PSD amplitudes is not so obvious. When the diamond surface is partially oxidized by the UV radiation in the atmosphere, the PSD amplitudes increase first and then decrease with the concentration of NaCl aqueous solution. And the sensitivity of oxidized diamond SGFET is higher than that of hydrogen-terminated and increases with the increase of oxidation degree.

Effect of Variations in the Alkyl Chain Lengths of Self-Assembled Monolayers on the Crystalline-Phase-Mediated Electrical Performance of Organic Field-Effect Transistors.

Self-assembled monolayers (SAMs) of organic molecules are frequently employed to improve the electrical performance of organic field-effect transistors (OFETs). However, the relationship between SAM properties and OFET performance has not been fully explored, leading to an incomplete understanding of the system. This study investigates the effect of the SAM alkyl chain length on the crystalline phase of pentacene films and OFET performance. Two types of SAMs—with alkyl chain lengths of 10 (decyltrichlorosilane, DTS) and 22 (docosyltrichlorosilane, DCTS)—were examined, and variations in the performance of pentacene-based OFETs with the nature of the SAM treatment were observed. Despite the similar surface morphologies of the pentacene films, field-effect mobility in the DCTS-treated OFET was twice that in the DTS-treated OFET. To find the reason underlying the dependence of the OFET’s electrical performance on the SAM alkyl chain length, X-ray diffraction measurements were conducted, followed by a phase analysis of the pentacene films. Bulk and thin-film phases were observed to coexist in the pentacene film grown on DTS, indicating several structural defects in the film; this can help explain the dependence of the OFET electrical performance on the SAM alkyl chain length, mediated by the different crystalline phases of pentacene.

End-Capping π-Conjugated Naphthodithiophene Diimide (NDTI)-Based Triads with Noncovalent Intramolecular S···O Interactions: A Route towards High-Performance Solution-Processable Air-Stable n-Type Semiconductors

Introducing noncovalent intramolecular interactions into functional π-conjugated organic molecules or polymers is a useful method to improve the performance of organic semiconducting devices. In this study, two small molecules based on naphthodithiophene diimide (NDTI), NDTI-BTIC1 and NDTI-BTIC2, were successfully designed and synthesized by covalently connecting an electron-deficient NDTI-core and two 3-(dicyanomethylidene)-indan-1-one (IC) groups with thiophene substituted by an alkoxy chain or alkyl chain, respectively. Density functional theory (DFT) calculations on the optimized geometries of the triads predict that the existence of noncovalent intramolecular S (thiophene)···O (alkoxy) interactions is possible in NDTI-BTIC1. The molecular orbital distributions of NDTI-BTIC1 and NDTI-BTIC2 show that the lowest unoccupied molecular orbitals (LUMOs) are delocalized in the whole molecule, implying the possibility to show n-type transport characteristics. The two molecules further demonstrated LUMOs at a low altitude of −4.37 to −4.45 eV, low enough for the stable transmission of electrons in the atmosphere. The solution-processing method was used to prepare transistors based on the two molecules’ bottom-gate top-contact (BGTC), which exhibited unipolar n-type field-effect transistor (FET) characteristics in the air. The FET performance of NDTI-BTIC1 is higher than that of NDTI-BTIC2 in both the as-spun and thermal annealed films, possibly attributed to the existence of noncovalent intramolecular S···O interactions in NDTI-BTIC1. Moreover, the maximum electron mobility of NDTI-BTIC1 obtained at 150 °C thermal annealing is improved by one order of magnitude compared to that of NDTI-BTIC2, being 0.17 and 0.085 cm2 V–1 s–1, respectively. The transport difference of the two molecules was proved by film morphology analysis. The results show that constructing noncovalent intramolecular S···O conformational locks between the TIC unit and NDTI can improve the organic field-effect transistor (OFET) devices’ performance through reasonable molecular design strategies.

Gate-Voltage-Modulated Spin Precession in Graphene/WS2 Field-Effect Transistors

Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS2) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS2 vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS2 spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.

Improved performance of MoS2 FET by in situ NH3 doping in ALD Al2O3 dielectric

Since defects such as traps and oxygen vacancies exist in dielectrics, it is difficult to fabricate a high-performance MoS2 field-effect transistor (FET) using atomic layer deposition (ALD) Al2O3 as the gate dielectric layer. In this paper, NH3 in situ doping, a process treatment approach during ALD growth of Al2O3, is used to decrease these defects for better device characteristics. MoS2 FET has been well fabricated with this technique and the effect of different NH3 in situ doping sequences in the growth cycle has been investigated in detail. Compared with counterparts, those devices with NH3 in situ doping demonstrate obvious performance enhancements: I on/I off is improved by one order of magnitude, from 1.33 × 105 to 3.56 × 106, the threshold voltage shifts from –0.74 V to –0.12 V and a small subthreshold swing of 105 mV/dec is achieved. The improved MoS2 FET performance is attributed to nitrogen doping by the introduction of NH3 during the Al2O3 ALD growth process, which leads to a reduction in the surface roughness of the dielectric layer and the repair of oxygen vacancies in the Al2O3 layer. Furthermore, the MoS2 FET processed by in situ NH3 doping after the Al and O precursor filling cycles demonstrates the best performance; this may be because the final NH3 doping after film growth restores more oxygen vacancies to screen more charge scattering in the MoS2 channel. The reported method provides a promising way to reduce charge scattering in carrier transport for high-performance MoS2 devices.

Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors.

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

Effects of N‐Ion Implantation on the Electrical and Photoelectronic Properties of MoS2 Field Effect Transistors

Ion implantation is widely used in the semiconductor industry as an important method of controlling the performance of semiconductor materials. As a 2D material with fantastic physical characteristics, MoS2 has been receiving extensive attention for its potential applications in electronic devices. N element is an impurity objectively existing in semiconductors. It may come from the semiconductor manufacturing process or the environment. Therefore, the effect of N element implantation on the material, electrical, and photoelectronic properties of MoS2 field effect transistor (FET) is reported. The results of Raman and photoluminescence (PL) shows that N‐ion implant caused the expansion of the MoS2 lattice and the disappearance of the characteristic peaks of PL. The prepared MoS2 FET exhibits a slow photoelectric response to 254 nm UV, and a fast photoelectric response to 650 and 532 nm lasers. After ion implant and annealing, the electrical performance and photocurrent of the MoS2 FET are significantly degraded. The research has a guiding role in impurity control in the semiconductor manufacturing process.

Performance of metal-semiconductor field effect transistors on mist chemical-vapor-deposition grown ZnO channels with intentionally oxidized AgOx Schottky contact gates

Metal-semiconductor field-effect transistors (MESFETs) were fabricated on ZnO thin films grown via mist-chemical vapor deposition (mist-CVD), a solution-based, highly scalable, non-vacuum technique. High-performance MESFETs were achieved by using in situ intentionally oxidized AgOx Schottky contact (SC) gates with large effective barrier heights (1.13−1.18 eV) and rectification ratios (at ±2 V) of &amp;gt;107. The device properties of the resulting MESFETS were investigated as a function of channel thickness, gate length, and temperature (T = 25–130 °C) with the best performing devices characterized by on/off current ratios &amp;gt;107, channel mobilities of 5.7 cm2V−1 s−1, and sub-threshold slopes of ∼100 mV/decade at room temperature. Reliable operation was maintained up to 130 °C with only a gradual increase in off current due to increased thermionic emission across the SC gate. These results demonstrate the potential of using the combination of mist-CVD ZnO channels and AgOx SC gates to produce low-cost, low operating voltage, transparent thin film transistors. The key physical processes are a significant increase in Schottky barrier height and the passivation of oxygen vacancies at the gate–channel interface due to the presence of reactive oxygen species during the deposition of the AgOx gate.

Ion-Selective Membrane-Coated Graphene-Hexagonal Boron Nitride Heterostructures for Field-Effect Ion Sensing.

An intrinsic ion sensitivity exceeding the Nernst–Boltzmann limit and an sp2-hybridized carbon structure make graphene a promising channel material for realizing ion-sensitive field-effect transistors with a stable solid–liquid interface under biased conditions in buffered salt solutions. Here, we examine the performance of graphene field-effect transistors coated with ion-selective membranes as a tool to selectively detect changes in concentrations of Ca2+, K+, and Na+ in individual salt solutions as well as in buffered Locke’s solution. Both the shift in the Dirac point and transconductance could be measured as a function of ion concentration with repeatability exceeding 99.5% and reproducibility exceeding 98% over 60 days. However, an enhancement of selectivity, by about an order magnitude or more, was observed using transconductance as the indicator when compared to Dirac voltage, which is the only factor reported to date. Fabricating a hexagonal boron nitride multilayer between graphene and oxide further increased the ion sensitivity and selectivity of transconductance. These findings incite investigating ion sensitivity of transconductance in alternative architectures as well as urge the exploration of graphene transistor arrays for biomedical applications.

Effects of polymer grain boundary passivation on organic–inorganic hybrid perovskite field-effect transistors

Despite successful applications of solution-processed organic–inorganic hybrid perovskites (OIHPs) such as archetypical methylammonium lead iodide (MAPI) in high-performance optoelectronic devices including solar cells and light emitting diodes, their application in field-effect transistors (FETs) remains relatively limited due to the unresolved issues caused by ion migration in OIHPs, such as screening of gate electric fields, lowered device on-off ratios and field-effect mobility, and large hysteresis in the FET transfer characteristics. Here, we report improved performances of the MAPI-based FET via a polymer-additive-based grain boundary (GB) passivation approach that suppresses the ion migration. Polycaprolactone (PCL) was incorporated into the MAPI FET as a GB-passivation additive as confirmed by scanning electron and atomic force microscopies. Unlike the typical n-type behavior and large transfer hysteresis in the starting, pristine MAPI FETs, the GB passivation by PCL led to a drastically reduced hysteresis in FET transfer characteristics, while hinting at an ambipolar transport and slight improvement in mobility, indicating a reduced ion migration in the PCL-incorporated MAPI FET. The effect of PCL GB passivation in suppressing ion migration was directly confirmed by the measured, increased activation energy for ion migration in the PCL-incorporated MAPI. The results not only represent the first report of the polymer-additive-based mitigation of the ion migration in the MAPI FET but also suggest potential utilities of the approach for enabling high-performance OIHP FETs and electronic devices in general.