Abstract
Transition metal dichalcogenide materials are studied to investigate unexplored research avenues, such as spin transport behavior in 2-dimensional materials due to their strong spin-orbital interaction (SOI) and the proximity effect in van der Waals (vdW) heterostructures. Interfacial interactions between bilayer graphene (BLG) and multilayer tungsten disulfide (ML-WS2) give rise to fascinating properties for the realization of advanced spintronic devices. In this study, a BLG/ML-WS2 vdW heterostructure spin field-effect transistor (FET) was fabricated to demonstrate the gate modulation of Rashba-type SOI and spin precession angle. The gate modulation of Rashba-type SOI and spin precession has been confirmed using the Hanle measurement. The change in spin precession angle agrees well with the local and non-local signals of the BLG/ML-WS2 spin FET. The operation of a spin FET in the absence of a magnetic field at room temperature is successfully demonstrated.
Highlights
An essential aim of spintronics is to exploit the spin degree of freedom of electrons to overcome challenges related to spin logic in order to develop new forms of information storage devices [1,2]
The ferromagnetic (FM) electrodes (NiFe/AlOx ) used as source and drain contacts are patterned at 45◦ with respect to the bilayer graphene (BLG) channel to operate the spin field-effect transistor (FET) at zero external magnetic field because spins injected from the FM should have a component that is parallel to the current direction to experience the spin precession due to the Rashba-type spin-orbit interaction (SOI)
It is worthwhile noting that ∆R can be modified by V bg more effectively in BLG than in SLG; when V bg < 0, ∆R is more sensitive to V bg, but when V bg > 0, we found that the change in ∆R is small due to the screening effect of gate electric fields by the n-type WS2 film (Figure S6c)
Summary
An essential aim of spintronics is to exploit the spin degree of freedom of electrons to overcome challenges related to spin logic in order to develop new forms of information storage devices [1,2]. The spin field-effect transistor (FET), which plays a key role in spintronics, was proposed by Datta and Das nearly three decades ago [3,4,5,6], but spin precession of the local current controlled only by electrical methods has not yet been achieved Elusive challenges in this field are the ability to control spin properties with back-gate voltage (V bg ) at ambient temperature and the development of an innovative material in which spin precession and lifetime are controlled and measured only by electrical tools [2]. The ferromagnetic (FM) electrodes (NiFe/AlOx ) used as source and drain contacts are patterned at 45◦ with respect to the BLG channel to operate the spin FET at zero external magnetic field because spins injected from the FM should have a component that is parallel to the current direction to experience the spin precession due to the Rashba-type SOI. The effective spin injection, detection, and gate modulation of the graphene-based system holds great potential for applications in the field of spintronics, enabling us to discover new areas of field-effect spin transport phenomena
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