Ferroelectric Polarization Reversal Research Articles

Strain-induced ferromagnetism and magneto-electric coupling in two-dimensional ferroelectric ZnIn2S4

Two-dimensional (2D) multiferroic materials are currently in high demand due to their significant potential for applications in the field of high-density data storage devices. However, due to the different requirements for generating ferroelectricity and magnetism, 2D multiferroic materials are rare. In this study, we propose that applying strain can induce magnetism in 2D ferroelectric materials with special electronic structures, thereby creating 2D multiferroics. Taking 2D ZnIn2S4 as an example, it shows robust ferroelectricity with an appropriate switching barrier (79.3 meV), and the out-of-plane ferroelectric polarization is 0.0322 C/m2. Applying biaxial tensile strain can change the energy of the flatband near the Fermi level, ultimately resulting in self-doping phenomena and leading to Stoner-type itinerant ferromagnetism. The reversal of ferroelectric polarization in ZnIn2S4 bilayer and ZnIn2S4–In2Se3 heterostructure can manipulate the magnetic moment of the system, exhibiting significant magnetoelectric coupling phenomena. Our findings provide a pathway for designing 2D ferromagnetic and multiferroic materials.

Uniaxially drawn poly (L-lactic acid)/ poly (vinylidene fluoride) polymer blend as a promising piezoelectric material: Hysteresis and resonance spectroscopy study

This study explores the potential for piezoelectricity in a blend of polyvinylidene fluoride (PVDF) and poly-L-lactic acid (PLLA) prepared using the solution casting method. Dielectric frequency measurements across a range of 102 to 106 Hz revealed piezoelectric resonance within a broader dielectric relaxation regime. Analysis of the resonance spectra for length and width vibrational modes enabled the determination of the piezoelectric tensor components of the PVDF/PLLA blend. The blend exhibited enhanced ferroelectric polarization reversal, remnant polarization, and coercive field compared to pristine PVDF samples. The piezoelectric constants d31 and d14 (d36 of the blend) were determined. Mechanical drawing and poling techniques were employed to generate multiple piezoelectric constants, allowing for efficient energy harvesting from various directions. This flexible blend offers promising prospects for versatile energy conversion applications.

Autonomous Light Intensity Adaptation in an Energy‐Efficient Retinomorphic Organic Ferroelectric Neuristor

Autonomous Light Intensity Adaptation in an Energy‐Efficient Retinomorphic Organic Ferroelectric Neuristor

Manipulation of magnetic anisotropy of 2D magnetized graphene by ferroelectric In2Se3

The capacity to externally manipulate magnetic properties is highly desired from both fundamental and technological perspectives, particularly in the development of magnetoelectronics and spintronics devices. Here, using first-principles calculations, we have demonstrated the ability of controlling the magnetism of magnetized graphene monolayers by interfacing them with a two-dimensional ferroelectric material. When the 3d transition metal (TM) is adsorbed on the graphene monolayer, its magnetization easy axis can be flipped from in-plane to out-of-plane by the ferroelectric polarization reversal of In2Se3, and the magnetocrystalline anisotropy energy (MAE) can be high to −0.692 meV/atom when adopting the Fe atom at bridge site with downward polarization. This may be a universal method since the 3d TM-adsorbed graphene has a very small MAE, which can be easily manipulated by the ferroelectric polarization. As a result, the inherent mechanism is analyzed by the second variation method.

Engineering Ferroelectric‐/Ion‐Modulated Conductance in 2D vdW CuInP2S6 for Non‐Volatile Digital Memory and Artificial Synapse

AbstractTwo‐dimensional (2D) ferroionics is appealing in performing complex artificial intelligence tasks due to the interesting property of coexistence of ferroelectricity and ionic activities. CuInP2S6 (CIPS), as a typical 2D ferroionic material, is highly conducive to rich functions of information devices due to the displacement of Cu+ inducing both ferroelectricity and ionic conductivity. However, the coupling and modulation of polarization and ion migration in CIPS for multifunctional information devices has not been fully explored. Here, this study demonstrates that digital memory and synaptic simulations are realized in Au/CIPS/Au device via engineering ferroelectric polarization reversal and the long‐distance migration of the Cu+ to change conductive modes. Steep resistive switching behavior based on ion‐migration is observed with a high on/off ratio of over 108, long retention time (>2 × 104 s), and current compliance engineered multilevel resistance states, demonstrating reliable nonvolatile high‐density memory characteristics. Based on the continuous modulation of polar order, the key synaptic behaviors are successfully simulated. Moreover, by the co‐modulation of polarization state and ions migration, the paired‐pulse facilitation, paired‐pulse depression, and potentiation following depression are achieved. These results suggest that CIPS is a promising candidate for constructing high‐performance, function‐enriched devices for data storage, information processing, and neuromorphic computing.

Strain-induced ferroelectric polarization reversal without undergoing geometric inversion in blue SiSe monolayer.

Ferroelectricity in two-dimensional (2D) systems generally arises from phonons and has been widely investigated. On the contrary, electronic ferroelectricity in 2D systems has been rarely studied. Using first-principles calculations, the ferroelectric behavior of the buckled blue SiSe monolayer under strain are explored. It is found that the direction of the out-of-plane ferroelectric polarization can be reversed by applying an in-plane strain. And such polarization switching is realized without undergoing geometric inversion. Besides, the strain-triggered polarization reversal emerges in both biaxial and uniaxial strain cases, indicating it is an intrinsic feature of such a system. Further analysis shows that the polarization switching is the result of the reversal of the magnitudes of the positive and negative charge center vectors. And the variation of buckling is found to play an important role, which results in the switch. Moreover, a non-monotonic variation of band gap with strain is revealed. Our findings throws light on the investigation of novel electronic ferroelectric systems.

Integrated In-Memory Sensor and Computing of Artificial Vision Based on Full-vdW Optoelectronic Ferroelectric Field-Effect Transistor.

The development and application of artificial intelligence have led to the exploitation of low-power and compact intelligent information-processing systems integrated with sensing, memory, and neuromorphic computing functions. The 2D van der Waals (vdW) materials with abundant reservoirs for arbitrary stacking based on functions and enabling continued device downscaling offer an attractive alternative for continuously promoting artificial intelligence. In this study, full 2D SnS2 /h-BN/CuInP2 S6 (CIPS)-based ferroelectric field-effect transistors (Fe-FETs) and utilized light-induced ferroelectric polarization reversal to achieve excellent memory properties and multi-functional sensing-memory-computing vision simulations are designed. The device exhibits a high on/off current ratio of over 105 , long retention time (>104 s), stable cyclic endurance (>350 cycles), and 128 multilevel current states (7-bit). In addition, fundamental synaptic plasticity characteristics are emulated including paired-pulse facilitation (PPF), short-term plasticity (STP), long-term plasticity (LTP), long-term potentiation, and long-term depression. A ferroelectric optoelectronic reservoir computing system for the Modified National Institute of Standards and Technology (MNIST) handwritten digital recognition achieved a high accuracy of 93.62%. Furthermore, retina-like light adaptation and Pavlovian conditioning are successfully mimicked. These results provide a strategy for developing a multilevel memory and novel neuromorphic vision systems with integrated sensing-memory-processing.

Ferroelectric Resistance Switching in Epitaxial BiFeO3/La0.7Sr0.3MnO3 Heterostructures.

BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO3 single-crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal was observed in the Au/BFO/LSMO heterostructures. The conduction mechanism was revealed to follow the Schottky emission model, and the Schottky barriers in high-resistance and low-resistance states were estimated based on temperature-dependent current-voltage curves. Further, the observed memristive behavior was interpreted via the modulation effect on the depletion region width and the Schottky barrier height caused by ferroelectric polarization reversal, combining with the oxygen vacancies migration near the BFO/LSMO interface.

Bending-induced isostructural transitions in ultrathin layers of van der Waals ferrielectrics

Using Landau-Ginzburg-Devonshire (LGD) phenomenological approach we analyze the bending-induced re-distribution of electric polarization and field, elastic stresses and strains inside ultrathin layers of van der Waals ferrielectrics. We consider a CuInP2S6 (CIPS) thin layer with fixed edges and suspended central part, the bending of which is induced by external forces. The unique aspect of CIPS is the existence of two ferrielectric states, FI1 and FI2, corresponding to big and small polarization values, which arise due to the specific four-well potential of the eighth-order LGD functional. When the CIPS layer is flat, the single-domain FI1 state is stable in the central part of the layer, and the FI2 states are stable near the fixed edges. With an increase of the layer bending below the critical value, the sizes of the FI2 states near the fixed edges decreases, and the size of the FI1 region increases. When the bending exceeds the critical value, the edge FI2 states disappear being substituted by the FI1 state, but they appear abruptly near the inflection regions and expand as the bending increases. The bending-induced isostructural FI1-FI2 transition is specific for the bended van der Waals ferrielectrics described by the eighth (or higher) order LGD functional with consideration of linear and nonlinear electrostriction couplings. The isostructural transition, which is revealed in the vicinity of room temperature, can significantly reduce the coercive voltage of ferroelectric polarization reversal in CIPS nanoflakes, allowing for the curvature-engineering control of various flexible nanodevices.

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films.

The emergence of complementary metal-oxide semiconductor (CMOS)-compatible HfO2-based ferroelectric materials provides a promising way to achieve ferroelectric field-effect transistors (FeFETs) with a steep subthreshold swing (SS) reduced to below the Boltzmann thermodynamics limit (∼60 mV/dec at room temperature), which has important implications for lowering power consumption. In this work, a metal-oxide-semiconductor field-effect transistor (MOSFET) is connected with Hf0.5Zr0.5O2 (HZO)-based ferroelectric capacitors with different capacitances. By adjusting the capacitance of ferroelectric capacitors, an ultralow SS of ∼0.34 mV/dec in HfO2-based FeFETs can be achieved. More interestingly, by designing the sweeping voltage sequences, the SS can be adjusted to be 0 mV/dec with the drain current ranging over six orders of magnitude, and the threshold voltage for turning on the MOSFET can be further reduced. The manipulated SS could be attributed to the evolution of ferroelectric switching. Our work contributes to understanding the origin of ultralow SS in ferroelectric MOSFETs and the realization of low-power devices.

Effect of growth temperature on self-rectifying BaTiO3/ZnO heterojunction for high-density crossbar arrays and neuromorphic computing

In the quest for high-density integration and massive scalability, ferroelectric-based devices provide an achievable approach for nonvolatile crossbar array (CBA) architecture and neuromorphic computing. In this report, ferroelectric-semiconductor (Pt/BaTiO3/ZnO/Au) heterojunction-based devices are demonstrated to exhibit nonvolatile and synaptic characteristics. In this study, the ferroelectric (BaTiO3) layer was modulated at various growth temperatures of 350 °C, 450 °C, 550 °C and 650 °C. Growing temperature in the ferroelectric layer has a significant impact on resistive switching. The ferroelectricity of the BaTiO3 thin film enhanced by increasing temperature causes a substantial shift in the interface state density at heterojunction interface, which is crucial for self-rectification. Furthermore, this self-rectifying property advances to reduce the crosstalk problem without any selector device. Enhanced resistive switching and neuromorphic applications have been demonstrated using BaTiO3 heterostructure devices at 550 °C. The dynamic ferroelectric polarization switching in this heterojunction demonstrated linear conductance change in artificial synapses with 91 % recognition accuracy. Ferroelectric polarization reversal with a depletion region at the heterojunction interface is the responsible mechanism for the switching in these devices. Thus, these findings pave the way for designing low power high-density crossbar arrays and neuromorphic application based on ferroelectric-semiconductor heterostructures.

Room-temperature antiferromagnetic CrSe monolayer with tunable metal–insulator transition in ferroelectric heterostructures

Recently, there has been a rapidly growing interest in two-dimensional (2D) transition metal chalcogenide monolayers (MLs) due to their unique magnetic and electronic properties. By using an evolutionary algorithm and first-principles calculations, we report the discovery of a previously unexplored, chemically, energetically, and thermodynamically stable 2D antiferromagnetic (AFM) CrSe ML with a Néel temperature higher than room temperature. Remarkably, we predict an electric field-controllable metal–insulator transition in a van der Waals heterostructure comprised of CrSe ML and ferroelectric Sc2CO2. This tunable transition in the CrSe/Sc2CO2 heterostructure is attributed to the change in the band alignment between CrSe and Sc2CO2 caused by the ferroelectric polarization reversal in Sc2CO2. Our findings suggest that 2D AFM CrSe ML has important potential applications in AFM spintronics, particularly in the gate voltage conducting channel.

Density Functional Theory Studies on Magnetic Manipulation in NiI2 Layers

Effective manipulation of magnetic states is fundamentally important to modern data storage and electronic devices that underpin the information age. Controlling magnetism via electric fields instead of magnetic fields has long been envisioned as a revolutionary technology to achieve higher energy efficiency and ultimate device miniaturization. The electric field paradigms, however, face major challenges of volatility, high energy cost, and low storage density. In this work, from density functional theory simulations, we developed effective approaches to achieve magnetic control in bilayer NiI2 via electrostatic doping and polarization field of the ferroelectric heterostructure. The interlayer antiferromagnetic (AFM) to ferromagnetic (FM) transition has been observed in bilayer NiI2 when the critical electron doping concentration reaches 0.625% due to the magnetic exchange competition between antiferromagnetic and ferromagnetic couplings. The critical concentration of magnetic transition can be reduced or increased depending on the polarization direction when it is placed on the ferroelectric substrate of Sc2CO2 as a result of polarization-induced interfacial electron transfer. Owing to the antiferromagnetic-to-ferromagnetic (AFM–FM) transition, the reversal of ferroelectric polarization modulates the electronic properties dramatically due to the strong interfacial magnetoelectric effect. The magnetic and electronic manipulation from electrostatic doping and polarization provides feasible approaches for next-generation electronics and spintronics.

Reducing Threshold of Ferroelectric Domain Switching in Ultrathin Two-Dimensional CuInP2S6 Ferroelectrics via Electrical-Mechanical Coupling.

Room-temperature out-of-plane two-dimensional ferroelectrics have promising applications in miniaturized non-volatile memory appliances. The feasible manipulation of polarization switching significantly influences the memory performance of ferroelectrics. However, conventional high-voltage-induced polarization switching inevitably generates charge injection or electric breakdown, and large-mechanical-loading-induced polarization switching may damage the structure of ferroelectrics. Hence, decreasing critical voltage/loading for ferroelectric polarization reversal is highly required. Herein, using atomic force microscopy experiments, the ferroelectric domain switching via both electric field and mechanical loading was demonstrated for an ultrathin (∼4.1 nm) CuInP2S6 nanoflake. The relevant threshold voltage/loading for polarization switching was ∼ -5 V/1095 nN, resulting from the electric field and flexoelectric effect, respectively. Finally, the electrical-mechanical coupling was adopted to reduce the threshold voltage/loading of CuInP2S6 significantly. It can be explained by the Landau-Ginzburg-Devonshire double-well model. This effective way for easily tuning the polarization states of CuInP2S6 opens up new prospects for mechanically written and electrically erased memory devices.

Ultrafast variation of the polarized state in proton-π electron coupled ferroelectric cocrystal Phz-H2ca

Optically driven ferroelectric polarization reversal and its dynamics are observed in hydrogen-bonded organic ferroelectrics on a scale of about 10 ps.

Silicon based Bi0.9La0.1FeO3 ferroelectric tunnel junction memristor for convolutional neural network application.

Computing in memory (CIM) based on memristors is expected to completely solve the dilemma caused by von Neumann architecture. However, the performance of memristors based on traditional conductive filament mechanism is unstable. In this study, we report a nonvolatile high-performance memristor based on ferroelectric tunnel junction (FTJ) Pd/Bi0.9La0.1FeO3 (6.9 nm) (BLFO)/La0.67Sr0.33MnO3 (LSMO) on a silicon substrate. The conductance of this device was adjusted by different pulse stimulation parameter to achieve various synaptic functions because of ferroelectric polarization reversal. Based on the multiple conductance characteristics of the devices and the high linearity and symmetry of weight updating, image processing and VGG8 convolutional neural network (CNN) simulation based on the devices were realized. Excellent results of the image processing are demonstrated. The recognition accuracy of CNN offline learning reached an astonishing 92.07% based on Cifar-10 dataset. This provides a more feasible solution to break through the bottleneck of von Neumann architecture.

Search for Magnetoelectric Coupling at the 57Fe/Hf0.5Zr0.5O2 Interface Using Operando Synchrotron Mössbauer Spectroscopy

AbstractMultiferroic materials with coexisting ferroelectric and ferromagnetic orders have attracted much attention due to the magnetoelectric coupling opening alternative prospects for electronic devices. Composite multiferroics containing separate ferroelectric and ferromagnetic components are a promising alternative to the single‐phase counterparts. Composite multiferroic structures comprising HfO2‐based ferroelectrics are potentially feasible for technological applications. Here, this study reports on the experiments aiming at the manifestation of magnetoelectric coupling at Fe/Hf0.5Zr0.5O2 (HZO) interface. Using synchrotron based 57Fe Mössbauer spectroscopy technique in operando, this study probes element‐selectively the local magnetic properties of a nanometer‐thick enriched 57Fe marker layer in functional Pt/57Fe/HZO/TiN capacitors and demonstrates the evidence of the ferroelectric polarization effect on the α‐Fe magnetic response. Besides α‐Fe exhibiting a magnetoelectric coupling, both ferromagnetic and superparamagnetic Fe3O4 components are found in the Mössbauer spectra, apparently originating from the oxygen or OH− ions penetrating ultrathin Pt overlayer during crystallization annealing of HZO. The observed effect as well as the electronic band lineup of the Fe/HZO interface elucidated from synchrotron based hard X‐ray photoemission spectroscopy measurements are interpreted in terms of charge‐mediated magnetoelectric coupling at the Fe/HfO2 interface driven by ferroelectric HZO polarization reversal.

Nonlinear terahertz pulse induced polarization dynamics in ferroelectric Ba0.8Sr0.2TiO3 thin film

The ultrafast ferroelectric polarization dynamics excited by intense THz pulses (with an electric field up to 23 MV/cm) in a multidomain Ba0.8Sr0.2TiO3 thin film has been experimentally demonstrated using optical second harmonic generation (SHG) probe. The obtained nonlinear dependence of the SHG intensity on the electric field of the THz pulse can be explained in terms of Landau-Khalatnikov equation by a transient ferroelectric polarization reversal. The best agreement between the experimental and simulated data was obtained when taking into account the multidomain structure of the film and carrying out convolution of the simulated polarization dynamics and the optical probe pulse.

A Robust Memristor Based on Epitaxial Vertically Aligned Nanostructured BaTiO3 -CeO2 Films on Silicon.

With the exploration of ferroelectric materials, researchers have a strong desire to explore the next generation of non-volatile ferroelectric memory with silicon-based epitaxy, high-density storage, and algebraic operations. Herein, a silicon-based memristor with an epitaxial vertically aligned nanostructures BaTiO3 -CeO2 film based on La0.67 Sr0.33 MnO3 /SrTiO3 /Si substrate is reported. The ferroelectric polarization reversal is optimized through the continuous exploring of growth temperature, and the epitaxial structure is obtained, thus it improves the resistance characteristic, the multi-value storage function of five states is achieved, and the robust endurance characteristic can reach 109 cycles. In the synapse plasticity modulated by pulse voltage process, the function of the spiking-time-dependent plasticity and paired-pulse facilitation is simulated successfully. More importantly, the algebraic operations of addition, subtraction, multiplication, and division are realized by using fast speed pulse of the width ≈50ns. Subsequently, a convolutional neural network is constructed for identifying the CIFAR-10 dataset, to simulate the performance of the device; the online and offline learning recognition rate reach 90.03% and 92.55%, respectively. Overall, this study paves the way for memristors with silicon-based epitaxial ferroelectric films to realize multi-value storage, algebraic operations, and neural computing chip applications.

Alkali metal sulfate: A new non-π-conjugated deep-ultraviolet quasi-phase matching crystal

Nonlinear optical crystals with ferroelectricity could realize frequency conversion based on the quasi-phase matching principal, which could effectively break the limitation of the inherent birefringence. Here, an alkali metal sulfate crystal, LiKSO4, is found, which combines a short absorption cutoff edge of 160 nm, a large second harmonic generation response of 4 × KH2PO4 and the typical ferroelectric polarization reversal into a single structure. Besides, it possesses an optimized Sr2Be2B2O7-like structure with -S-O-Li- bonds in the adjacent layers, which effectively avoids the layer growth tendency. Therefore, this manuscript provides the first sulfate deep-ultraviolet quasi-phase matching crystal, which opens a new horizon for the development of deep-ultraviolet nonlinear optical materials.