Low humidity hysteresis and fast response are important parameters for evaluating sensor performances. However, it is difficult for a sensor to simultaneously obtain a low humidity hysteresis and fast response time. In this work, a low humidity hysteresis and fast response silicon based capacitive humidity sensor was fabricated based on a two-step deposition strategy using SiO2 and GO. The scanning electron microscope (SEM) was used to characterize the morphologies for the fabricated sensor, demonstrating the successful synthesis of sensitive films. The experimental results suggested that, compared with the pure GO and GO/SiO2 composite film sensors, the two-step deposition strategy fabricated layered SiO2 supported GO film humidity sensor exhibited the lowest humidity hysteresis and the fastest response speed. The humidity hysteresis and response/recovery time are 3.5 % and 3 s/2 s, respectively. The humidity sensing mechanism for the observed low humidity hysteresis and fast response was analyzed via morphologic structures and Young-Laplace equation. This work demonstrates that the morphological structures modulation is an important and effective method for improving sensor performance, providing a valuable reference for high performance sensor fabrication.