Abstract In order to solve the problem of failure during the storage of semiconductor bridge initiating explosive devices, the alternating humid and heat test of semiconductor bridge component was carried out according to GJB5309.30-2004 test method for initiating explosive devices -part 30: Humid and heat test. The semiconductor bridge component was characterized by means of resistance measurement, microscopic characterization, energy spectrum test, roughness test, etc. The resistance at the wires showed that the failure rate of Sample 1 and Sample 2 were 11% and 88%, respectively after 28 days of alternating humid and heat test, and the resistance of the failed sample at the solder pads did not change. The scanning electron microscope and energy spectrum test results show that there is significant corrosion at the wires end, and the component such as Fe, Co, Ni appeared at the wire end after the humid and heat test. The roughness test results show that the surface roughness of sample 1’s wire is smaller than that of sample 2. These indicate that the failure mode of semiconductor bridge components in humid and heat environments is atmospheric corrosion, and the surface state of the wire affects their failure efficiency.
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