Failure Analysis Techniques Research Articles

A NEW FAILURE ANALYSIS TECHNIQUE USING THE THERMO-ELECTROMOTIVE FORCE INDUCED BY LASER IRRADIATION

A new failure analysis technique based on the thermo-electromotive force induced by laser irradiation has been developed for evaluation of interconnects. This technique, which uses a high sensitivity OBIC (optical beam induced current) system, realizes the sensitive detection of defects, such as infant and advanced defects in aluminium (Al) interconnects, with no application of voltage or the removal of overlaid insulator films. This technique has been demonstrated in the analyses of many modes of interconnect failure.

Demonstration of a focused ion-beam cross-sectioning technique for ultrastructural examination of resin-dentin interfaces

Objectives. Focused ion-beam (FIB) etching, commonly used as a cross-sectioning technique for failure analysis of semiconductor devices, has recently been applied to biological tissues to expose their ultrastructure for examination. It was the aim of this investigation to determine the practical utility of FIB to cross-section resin-dentin interfaces in order to morphologically evaluate the completeness of resin penetration into the exposed collagen scaffold at the resin-dentin bond interface. Methods. Two representative commercially available dentin adhesive systems were bonded to mid-coronal dentin. After appropriate fixation and dehydration of the resin-bonded dentin samples, a scanned focused ion-beam of a few tens of nano-meters in diameter was used to cross-section the resin-dentin interface. Examination of the interfacial ultrastructure was accomplished using a field-emission SEM. Results. Results indicate possible artifact production at the cross-sectioned interface, hiding its actual ultrastructure, probably due to a heat-effect with possible recrystallization. Further studies of FIB are needed to optimize its usefulness for resin-dentin interface examinations and other biological tissue applications. Significance. Complete resin saturation of the demineralized dentin surface-layer has been claimed to be the key factor for a long-lasting resin-dentin bond. A “clean” artifact-free micro-cross-sectioning technique may provide indisputable ultra-structural information about the depth of resin penetration into the demineralized zone. Such a test would be useful in the development of dentin adhesive systems.

Optical Beam Induced Current Techniques for Failure Analysis of Very Large Scale Integrated Circuits Devices

In failure analysis of complementary metal oxide semiconductor (CMOS) very large scale integrated (VLSI) circuits using optical beam induced current (OBIC) techniques, circuit analysis was carried out by studying the flow path of detected photocurrents for the first time. This circuit analysis revealed that the OBIC current can be detected even on a good unit. Furthermore, this gave a clear explanation as to the reason why the suspected failure site detected by OBIC and emission microscopy analyses did not always occur at the same site as the defect. This study showed that there is a high possibility of detecting a failure due to metal-metal short by OBIC analysis.

Combining electron and focused ion beam techniques for failure analysis and design verification of integrated circuits

Abstract The increasing complexity of todays integrated circuits (IC's) results sometimes in physical restrictions for electron beam probing. Measurements on passivated structures as well as on buried layers are impeding the voltage accuracy and leading to increased crosstalk effects. By applying different focused ion beam (FIB) techniques like physical sputtering and metal depositioning these difficulties can be solved. This paper describes the physical restrictions and demonstrates the combination of electron and ion beam techniques. The results are compared with those recently achieved without focused ion beam support.

Reliability physics of electronic devices through material characterization and environmental stress testing techniques

This paper describes the approach of reliability physics to develop and produce electronic devices with an acceptable yield and reliability. The importance of material characterization techniques for process monitoring and product failure analysis is discussed. The potential and significance of environmental stress testing which has established as a distinct technique is explained. The technique is used to understand wear-out (Defect) failure mechanism and for reliability prediction. As can be seen that reliability physics acts as a ‘Midwife’ for the development of better or new device and/or technology with desired reliability level.

Electrical overstress (EOS) power profiles: A guideline to qualify EOS hardness of semiconductor devices

We propose the power-to-failure vs. time-to-failure relationship (power profile) as a measure to determine the EOS hardness of integrated circuits. Bipolar integrated circuits with different I/O ESD protection designs were characterized for HBM-ESD and EOS under unipolar stress conditions. Measured power profiles indicate that good ESD performance is not a sufficient condition to assure EOS robustness. Furthermore, experimentally measured power profiles together with failure analysis techniques can pinpoint layout design weaknesses.

Shallow trench isolation double-diobe electrostatic discharge circuit and interaction with DRAM output circuitry

Electrostatic discharge (ESD) performance of a shallow-trench-isolation double-diode protection circuit in CMOS technology is discussed. This paper highlights the sensitivities of these devices to semiconductor process parameters, interaction with chip circuitry and advanced failure analysis techniques.

Probing for answers in the characterisation of advanced III–V device structures

The successful production of advanced III–V devices such as the MQW laser relies heavily on the application of a wide range of analytical techniques for general characterisation and failure analysis. Single devices very often contain binary, ternary and quaternary III–V compounds in very thin layers of varying composition and intricate geometry. This article describes some of the methods that have been developed at GMMT Caswell by the materials analysis group to prepare these difficult materials for analysis.

IC failure analysis: techniques and tools for quality reliability improvement

The role of failure analysis is discussed. Failure analysis techniques and tools, including electrical measurements, optical microscopy, thermal imaging analysis, electron beam techniques, light emission microscopy, ion beam techniques, and scanning probe microscopy, are reviewed. Opportunities for advances in the field of IC failure analysis are considered.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

New application of laser beam to failure analysis of LSI with multi-metal layers

A new technique for failure analysis of LSI with multi metal layers is described. There is a fabrication technique to form a big and optional window on upper layers using Nd-YAG laser without destroying any electrical function, and to approach the failure point through this window. The failure analysis procedure based on logical flow is presented. Fabrication technique is located in part of this procedure which consists of four steps. Two difficult reasons for approaching the failure point without fabrication technique are described. This difficulty results from line composition and line width. The fabrication procedure using Nd-YAG laser is reported. This procedure is to cover the chip surface with photo resist, and form a big and optional size window on upper layer with laser beam, and finally expose the purposed layer. Three failure analysis examples using this technique are introduced: unformed contact falure mode, Si-noduled failure mode, and isolation destroying failure mode.

Failure analysis of ULSI circuits using photon emission

A real-time failure analysis technique for ULSI circuits using photon emission is proposed. This technique utilizes a photon detection system combined with a circuit tester. Improved failure detection is achieved because the tester can bias arbitrary blocks in the ULSI chip. Detecting and correct process defects and design errors improves the reliability of the ULSI chip. >

Micromechanics of natural composites.

Composite materials have been used for many years in structural applications which require advantageous properties such as light weight, high stiffness, and the ability to tailor the material to suit specialized requirements (Shaffer 1964; Adams 1974; Chamis 1974; Jones 1975). Design procedures, analytical prediction methods, failure analysis techniques, and manufacturing processes have been developed to a high degree of sophistication (Porter 1966; Shibley 1969; Hayashi 1970).

Use of advanced analytical techniques for VLSI failure analysis : Indrajit Banerjee, Bryan Tracy, Paul Davies and Bob McDonald. 28th A. Proc. Reliab. Phys. Symp. (IEEE), 61 (March 1990)

Use of advanced analytical techniques for VLSI failure analysis : Indrajit Banerjee, Bryan Tracy, Paul Davies and Bob McDonald. 28th A. Proc. Reliab. Phys. Symp. (IEEE), 61 (March 1990)

Internal friction: a fast technique for electromigration failure analysis : F. Volkommer, H. G. Bohn, K.-H. Robrock and W. Schillng. 28th A. Proc. Reliab. Phys. Symp. (IEEE), 51 (March 1990)

Internal friction: a fast technique for electromigration failure analysis : F. Volkommer, H. G. Bohn, K.-H. Robrock and W. Schillng. 28th A. Proc. Reliab. Phys. Symp. (IEEE), 51 (March 1990)

Diagnostic techniques for failure analysis and reliability evaluation in VLSI technology

The essential issue in the development of integrated circuit (IC) technologies that allow the arrangement of high densities of electronic components on a single substrate (very-large-scale integration technology) is the capability of making a reliable product in a reliable process. To maximize product yield and reliability, modern IC technology requires the availability of a broad range of analytical techniques: on the one hand, techniques that provide fast feed-back to the process to improve control of the parameters (process monitoring); on the other hand, techniques that allow accruate analysis of failed products (failure analysis). In this contribution the importance of diagnostic techniques for failure analysis will be demonstrated by means of some typical case studies. These include non-destructive investigations (scanning acoustic tomography) to study the effect of poor adhesion between chip and encapsulant and to study the bonding quality. Furthermore, dendrite-like structures on the decapsulated chip have been identified with scanning electron microscopy (SEM) and energy dispersive x-ray analysis (EDXA). In addition, an example will be included that shows the limitations of the performance of the present-day analytical techniques. The conclusions are: (1)the availability of a large variety of powerful analytical techniques is essential for the development of advanced IC technologies; (2)as a result of the reduction in physical size of the structures on an IC, the limits of performance (in particular, the product of spatial resolution and detection limits) of the present-day analytical techniques is being approached; (3)there is an increasing need, stimulated by high costs of analysis and required fast feedback of the results, for ‘non-destructive’ diagnostic techniques.

Global-local finite element-spectral-boundary element techniques for failure analysis

Techniques consisting of combinations of boundary elements, finite elements, and spectral overlays are described. These techniques are then applied to problems of material failure characterized by localization.

Predicting Sand Production in U.S. Gulf Coast Gas Wells Producing Free Water

A study was undertaken to develop a statistical model capable of predicting the sanding of U.S. gulf coast gas wells that also produce free water. Available models predict sand production when only hydrocarbons are being produced, but none of the current models apply to gas wells when there is free-water production. Field data from gas wells and log-derived properties of reservoir rock were used to construct a usable model. This model, which differs from current models by using the previously developed dry model as an input in the statistically generated new wet model, has provided a practical tool that is based on failure criteria but validated by field data. The model presented here fits field data of water-producing gas wells better than the one currently available. When the optimum decision concerning gas production rate and the need for sand control can be made at the time of initial completion, more profit can be realized from the project. This model is intended to aid in the prevention of formation and equipment damage in gas wells.

X-ray fractography. A new technique for fatique crack growth and failure analysis : Lebrun, J.L.; Barral, M.; Bignonnet, A.; Maillard-Salin, C.; Nhari, A. Residual stresses in science and technology. Proceedings of the international conference, Garmisch-Partenkirchen (FRG), Oct. 1986. pp. 109–116. Deutsche Gesellschaft fur metallkunde, 1059 pp. (1987)

X-ray fractography. A new technique for fatique crack growth and failure analysis : Lebrun, J.L.; Barral, M.; Bignonnet, A.; Maillard-Salin, C.; Nhari, A. Residual stresses in science and technology. Proceedings of the international conference, Garmisch-Partenkirchen (FRG), Oct. 1986. pp. 109–116. Deutsche Gesellschaft fur metallkunde, 1059 pp. (1987)

Evaluation of High Voltage IC's by Corona Charging

Many high voltage integrated circuits are sensitive to surface ions. The accumulation of net charge due to these ions over certain regions of the device results in decreased breakdown voltage or increased leakage current. The deliberate deposition of surface ions on a device from an atmospheric pressure discharge can be used to determine the surface ion sensitivity of devices. This technique is described and is shown to be useful in evaluating device designs and process variations and in failure analysis. The effects on the surface ion sensitivity of variations in dielectrically isolated tub depth, of field plate dimension, and of length of field grading diffusions have been examined using this method. Three examples of the use of this technique for failure analysis are also presented.

Failure analysis of plastic encapsulated components—the advantages of IR microscopy*

SUMMARYThis paper demonstrates that the use of an IR microscope in non‐destructive failure analysis of plastic encapsulated devices overcomes many of the problems previously associated with conventional failure analysis techniques. Moreover, the devices are amenable to subsequent examination and testing. Its advantages are highlighted in a number of case histories, concerning bond quality, corrosion and features of poor processing. The consequential modification to failure analysis methodology and its applicability to VLSI devices are discussed.