Fabrication Of Optoelectronic Devices Research Articles

Impact of doping on the Bridgman grown organic stilbene single crystal for third order NLO applications

Transparent 1, 3, 5-Triphenylbenzene doped Stilbene (TBS) single crystal was successfully grown by employing the Bridgman technique. SCXRD studies found crystallographic parameters, which reveal that the TBS single crystal has crystallized in a monoclinic crystal structure with the space group of P21/C. The identification of the functional groups in the TBS crystal was accomplished through the FTIR analysis. The UV–Vis spectral data shows that the TBS crystal exhibits minimal absorption across the visible spectrum, with a lower cutoff wavelength of 365 nm. The violet emission is observed at 380 and 405 nm in the fluorescence analysis. Additionally, the crystal's high quality was confirmed by a full width at half maximum value of 123 arcsec in the prominent rocking curve peak. Third-order nonlinear optical susceptibility χ(3) was determined to be 4.26 × 10−6 esu using the Z-scan technique. These are exciting findings that highlight the TBS crystal's suitability for various applications, including scintillation and optoelectronic device fabrication.

Molten glass-mediated conditional CVD growth of MoS2 monolayers and effect of surface treatment on their optical properties

In the rapidly developing field of optoelectronics, the utilization of transition-metal dichalcogenides with adjustable band gaps holds great promise. MoS2, in particular, has garnered considerable attention owing to its versatility. However, a persistent challenge is to establish a simple, reliable and scalable method for large-scale synthesis of continuous monolayer films. In this study, we report the growth of continuous large-area monolayer MoS2 films using a glass-assisted chemical vapor deposition (CVD) process. High-quality monolayer films were achieved by precisely controlling carrier gas flow and sulfur vaporization with a customized CVD system. Additionally, we explored the impact of chemical treatment using lithium bistrifluoromethylsulfonylamine (Li-TFSI) salt on the optical properties of monolayer MoS2 crystals. To investigate the evolution of excitonic characteristics, we conditionally grew monolayer MoS2 flakes by controlling sulfur evaporation. We reported two scenarios on MoS2 films and flakes based on substrate-related strain and defect density. Our findings revealed that high-quality monolayer MoS2 films exhibited lower treatment efficiency due to substrate-induced surface strain. whereas defective monolayer MoS2 flakes demonstrated a higher treatment sensitivity due to the p-doping effect. The Li-TFSI-induced changes in exciton density were elucidated through photoluminescence, Raman, and x-ray photoelectron spectroscopy results. Furthermore, we demonstrated treatment-related healing in flakes under variable laser excitation power. The advancements highlighted in our study carry significant implications for the scalable fabrication of diverse optoelectronic devices, potentially paving the way for widespread real-world applications.

Photochemical and Patternable Synthesis of 2D Covalent Organic Framework Thin Film Using Dynamic Liquid/Solid Interface.

2D covalent organic frameworks (COFs) are highly porous crystalline materials with promising applications in organic electronics. Current methods involve either on-surface synthesis (solid surface) or interfacial synthesis (liquid/liquid, liquid/gas interface) to create thin films for these applications, each with its drawbacks. On-surface synthesis can lead to contamination from COF powder or unreacted chemicals, while interfacial synthesis risks damaging the film during post-transfer processes. These challenges necessitate the development of alternative synthesis methods for high-quality 2D COF films. This study presents a novel approach for synthesizing homogeneous 2D COF thin films by combining photochemistry and a liquid-flowing system. Leveraging previous work on liquid flow systems to prevent contamination during solvothermal synthesis, this approach to the photochemical method, resulting in the synthesis of high-crystalline 2D COF films with tunable thickness is adopted. The photochemical approach offers spatially controllable energy sources, enabling patternable COF synthesis. Notably, it is successfully fabricated ultrasmooth patterned 2D COF films on hexagonal boron nitride, offering a streamlined process for optoelectronic device fabrication without additional pre, post-processing steps.

Emulation of optical and electrical synaptic functions in MoS2/SnSe2 van der Waals heterojunction memtransistors

The simulation of advanced synaptic functions of the human brain by electrical devices could be an effective strategy for constructing high-efficiency neuromorphic systems. Two-dimensional (2D) materials are promising candidates in the fabrication of optoelectronic devices due to their excellent photoelectric performances. Herein, opto-electronic synapses based on layered MoS2/SnSe2 van der Waals heterojunction(vdwH) memtransistors have been investigated. It can be observed that the typical synaptic functions, such as excitatory/inhibitory postsynaptic current, long-term potentiation/depression, paired-pulse facilitation/depression (PPF/PPD), as well as the transition from short-term memory (STM)to long-term memory (LTM) are realized using both electrical and optical pulses as input signals. In addition, the time constant for PPF under optical pulses was 3.91 s, which was comparable with the response times of biological neural synapses. So the MoS2/SnSe2 memtransistor could work as an electronic synapse in future artificial neural networks, inspiring the implementation of 2D materials for neuromorphic storage and computation.

First-principles calculations to investigate effect of strain on magnetic and optical properties of Mn-adsorbed SnSe2 monolayer

Nowadays, two-dimensional materials are ideal for fabricating optoelectronic and spintronic devices. We have investigated the optical and magnetic properties of −6 % to 6 % strain on Mn-adsorbed monolayer SnSe2 films using a first-principles approach. The Mn-adsorbed monolayer SnSe2 is a magnetic semiconductor in the absence of strain effects. As the tensile strain increases, the band gap of the Mn-adsorbed monolayer SnSe2 decreases and the structure becomes unstable, and Mn adsorption changes to exothermic adsorption at −6 % strain. The magnetic moment of the system increases slightly with increasing tensile strain and decreases rapidly when the strain reaches 4%. As the compressive strain increases, the magnetic moment first decreases slightly and then decreases rapidly when the strain reaches −4 %. Calculations of the optical properties show that the static dielectric constants at −6 %, −4 %, −2 %, 0 %, 2 %, 4 % and 6 % strains are 15.23, 10.19, 8.67, 7.78, 6.38, 5.99 and 5.92, respectively, which increase with increasing compressive strain. It decreases with increase in tensile strain. The static dielectric function increases as the compressive strain increases and decreases as the tensile strain increases. In the visible light region, the reflectivity, refractive index, extinction coefficient and photoconductivity in the XX and ZZ directions increase with increasing tensile strain. Our study shows that the optoelectronic and magnetic properties of the SnSe2 adsorbed Mn system can be improved to some extent by applying strain, and this study is expected to provide theoretical guidance for the fabrication of SnSe2-based magnetic optoelectronic devices.

A hybrid density functional study of tensile-induced changes in phonon dispersion, electronic structure and optical absorption of bilayer BN for optoelectronic applications

The electronic, phonon dispersion and optical properties of bilayer BN have been investigated with density functional theory (DFT) calculations. Interestingly, applying the biaxial strain of 4% converts the indirect band gap of bilayer BN to a direct band gap. We show that the interaction between the BN layers results in the removal of two-fold degeneracy and separation of ZA and ZO phonon modes near the Γ point. Across the entire range of applied biaxial tensile strains, the bilayer BN exhibits a dynamically stable behavior. The phonon bandgap of bilayer BN decreases under tensile strain. The bilayer BN has strong adsorption in the UV region and the optical absorption peaks are red-shifted by applying the tensile strain. These findings are essential for the strain engineering of bilayer BN and future fabrication of flexible electronic and optoelectronic devices.

Surfactant Micelle-Driven High-Efficiency and High-Resolution Length Separation of Carbon Nanotubes for Electronic Applications.

High-efficiency extraction of long single-wall carbon nanotubes (SWCNTs) with excellent optoelectronic properties from SWCNT solution is critical for enabling their application in high-performance optoelectronic devices. Here, a straightforward and high-efficiency method is reported for length separation of SWCNTs by modulating the concentrations of binary surfactants. The results demonstrate that long SWCNTs can spontaneously precipitate for binary-surfactant but not for single-surfactant systems. This effect is attributed to the formation of compound micelles by binary surfactants that squeeze the free space of long SWCNTs due to their large excluded volumes. With this technique, it can readily separate near-pure long (≥500nm in length, 99% in content) and short (≤500nm in length, 98% in content) SWCNTs with separation efficiencies of 26% and 64%, respectively, exhibiting markedly greater length resolution and separation efficiency than those of previously reported methods. Thin-film transistors fabricated from extracted semiconducting SWCNTs with lengths >500nm exhibit significantly improved electrical properties, including a 10.5-fold on-state current and 14.7-fold mobility, compared with those with lengths <500nm. The present length separation technique is perfectly compatible with various surfactant-based methods for structure separations of SWCNTs and is significant for fabrication of high-performance electronic and optoelectronic devices.

Strong Optical Coupling of Lattice Resonances in a Top-down Fabricated Hybrid Metal-Dielectric Al/Si/Ge Metasurface.

Optical metasurfaces enable the manipulation of the light-matter interaction in ultrathin layers. Compared with their metal or dielectric counterparts, hybrid metasurfaces resulting from the combination of dielectric and metallic nanostructures can offer increased possibilities for interactions between modes present in the system. Here, we investigate the interaction between lattice resonances in a hybrid metal-dielectric metasurface obtained from a single-step nanofabrication process. Finite-difference time domain simulations show the avoided crossing of the modes appearing in the wavelength-dependent absorptance inside the Ge upon variations in a selected geometry parameter as evidence for strong optical coupling. We find good agreement between the measured and simulated absorptance and reflectance spectra. Our metasurface design can be easily incorporated into a top-down optoelectronic device fabrication process with possible applications ranging from on-chip spectroscopy to sensing.

Analysing the suitability of CaTiO3/Ca1–xSrxTiO3/SrTiO3 perovskite for fabrication of optoelectronic devices using QuantumATK tool: a study for electronic and optical properties

Calcium Titanate (CaTiO3) as a material has been researched for various applications like those in capacitors, piezoelectric devices and ceramic applications. Same has been possible owing to the exhibition of various characteristics of this material like high melting point (1,625 °C) and dielectric properties. However, only limited studies have been conducted to understand the impact of Strontium (Sr) doping and possibility of adopting this material into any kind of optoelectronic applications. This paper carries on an in-depth analysis on CaTiO3 and study effect of Sr as a dopant on its properties. Analysis has been carried out using Quantum ATK tool based on DFT approximations. CaTiO3 perovskite properties were studied by using the GGA (Generalized Gradient Approximation) and PBE (Perdew–Burke–Ernzerhof) functionals, which are used with the LCAO calculator. As a result of the inclusion of Sr at the Ca site, the electronic band structure of CaTiO3 was changed by the introduction of a gamma point. Bandgap of CaTiO3 was analysed to be dependent on the Sr site concentration and increased from 2.3 eV (Direct bandgap) to 2.3612 eV (Indirect bandgap), when Sr and Ca site concentration were equal, but it decreased with further increase in Sr site concentration to 1.7155 eV. Pure CaTiO3’s projected density of states changed after doping, providing evidence for the effects of the dopant on the system. As a result of an examination of the optical properties of both systems, it is found that CaTiO3 at 380 nm (close to infrared) exhibits an effective extinction coefficient (k) value of 0.78, whereas at 600 nm, the attenuation of light decreases to zero. This makes Sr doping in CaTiO3 another attractive candidate for optical devices in addition to its ability to change optical properties.

Revealing defect centers in PbWO4 single crystals using thermally stimulated current measurements

The trap centers have a significant impact on the electronic properties of lead tungstate (PbWO4), suggesting their crucial role in optoelectronic applications. In the present study, we investigated and revealed the presence of shallow trap centers in PbWO4 crystals through the utilization of the thermally stimulated current (TSC) method. TSC experiments were performed in the 10–280 K range by applying a constant heating rate. The TSC spectrum showed the presence of a total of four peaks, two of which were overlapped. As a result of analyzing the TSC spectrum using the curve fit method, the activation energies of revealed centers were found as 0.03, 0.11, 0.16, and 0.35 eV. The trapping centers were associated with hole centers according to the comparison of TSC peak intensities recorded by illuminating the opposite polarity contacts. Our findings not only contribute to the fundamental understanding of the charge transport mechanisms in PbWO4 crystals but also hold great promise for enhancing their optoelectronic device performance. The identification and characterization of these shallow trap centers provide valuable insights for optimizing the design and fabrication of future optoelectronic devices based on PbWO4.

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy.

The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest due to their wide application in optoelectronic devices. However, conventional molecular beam epitaxy requires substrate temperatures between 400 and 500 °C, which can lead to disorder scattering, dopant diffusion, and interface roughening, adversely affecting device performance. Lower growth temperatures enable the fabrication of high-speed optoelectronic devices by increasing arsenic antisite defects and reducing carrier lifetimes. This work investigates the low-temperature epitaxial growth of InAs/GaAs short-period superlattices as an ordered replacement for InGaAs quantum wells, using migration-enhanced epitaxy (MEE) with low growth temperatures down to 200-250 °C. The InAs/GaAs multi-quantum wells with InAlAs barriers using MEE grown at 230 °C show good single crystals with sharp interfaces, without mismatch dislocations found. The Raman results reveal that the MEE mode enables the growth of (InAs)4(GaAs)3/InAlAs QWs with excellent periodicity, effectively reducing alloy scattering. The room temperature (RT) photoluminescence (PL) measurement shows the strong PL responses with narrow peaks, revealing the good quality of the MEE-grown QWs. The RT electron mobility of the sample grown in low-temperature MEE mode is as high as 2100 cm2/V∗s. In addition, the photoexcited band-edge carrier lifetime was about 3.3 ps at RT. The high-quality superlattices obtained confirm MEE's effectiveness for enabling advanced III-V device structures at reduced temperatures. This promises improved performance for applications in areas such as high-speed transistors, terahertz imaging, and optical communications.

Fabrication of composite transparent conductive electrodes based on silver nanowires

Composite transparent conductive electrodes (C-TCEs) have recently been produced using low-cost techniques to keep up with the boom in the fabrication and development of optoelectronic devices. In this article, silver nanowires (AgNWs) were successfully synthesized by a simple hydrothermal method using different molecular weights MWs of poly (N-vinylpyrrolidone) (PVP). Graphene oxide (GO) was prepared using the modified Hummers’ method and a reduction step was held on GO films to produce reduced GO (rGO). C-TCEs were fabricated by over-coating the AgNWs electrodes with rGO, or poly(3,4-ethylenedioxythiophene) polystyrene sulfonate to improve the roughness, surface energy, and sheet resistance. The influence of using lower and higher MWs of PVP on the yield, shape, and size of AgNWs was investigated. The results showed that using lower MW of PVP had a great effect on the yield, morphology, and aspect ratio of AgNWs with diameter of 46 nm and average length 12 µm. The optical, morphological, topographical, and electrical properties of TCEs were studied. AgNWs/rGO composite electrode provided the lowest surface roughness and surface energy of 250 nm and 47.95 mN/m, respectively, with a relatively high transparency of 78.2% at 550 nm light wavelength, and a low sheet resistance of 27 Ω/□.

Multiphoton photocurrent in wide bandgap semiconductors for nonlinear optoelectronics: Comparison of GaP, GaN/InGaN, and SiC

Wide bandgap semiconductors are ideally suited for nonlinear optoelectronics. Because their bandgaps are larger than 2 eV, simultaneous absorption of two or more near-infrared photons is necessary to excite the electrons from the valence to the conduction band. Understanding of the processes that affect multiphoton absorption is important in the design and fabrication of optoelectronic devices. Here, we present an overview of the photocurrent response in photodetectors made from GaP, GaN, InGaN, and SiC when they are excited by photons at 1.2 eV. Recent measurements have shown that sub-bandgap absorptions contribute to photocurrent in GaP, and, thus, it is not a good material for nonlinear optoelectronics. Similarly, the response of GaN is affected by long-lived trapped charges. Photocurrents in InGaN and SiC are predominantly from three- and four-photon absorption, respectively. Moreover, these materials can withstand excitation intensities higher than 1011 W cm−2, making them appropriate platforms for nonlinear optoelectronics.

Comprehensive analysis of DFT-3C methods with B3LYP and experimental data to model optoelectronic properties of tetracene

Modern computational chemistry methods aid experimentalists in scrutinizing molecular systems for organic optoelectronic device fabrication. They are also helpful for device engineering, such as choosing metals for contact fabrication without sophisticated instrumentation. The B3LYP functional with 6-31G(d,p) or 6-311G(d,p) basis set is a widely used method in this regard. Recently, many upgraded methods, such as the three-fold corrected composite scheme (3C), have been reported to offer cost-effectiveness and better accuracy than the B3LYP. This is particularly interesting from a materials engineering point of view as these methods offer the possibility of rapidly screening the materials prior to the experimental analysis. In order to evaluate their suitability towards organic optoelectronic systems, in this work, we have used three composite schemes, namely B97-3C, PBEh-3C and HF-3C, along with B3LYP and the experimental data. The well-studied tetracene system is considered for the analysis, and different optoelectronic properties such as bandgap, reorganization energy, and absorption maximum are calculated theoretically and compared with the experimental data. The results indicate that though slightly expensive, B3LYP performs better than the 3C methods. Of the three, only PBEh-3C performs on par with B3LYP in accuracy and time. A note of caution is that these results should be inferred as this level of theory is adequate for the screening and modeling optoelectronic systems rather than a potential computational chemistry method.

Surface and Interface Engineering for Highly Stable CsPbBr3/ZnS Core/Shell Nanocrystals.

Shelling with chalcogenides on the surface of lead halide perovskite (LHP) nanocrystals (NCs) is believed to be an effective approach to increase their stability under high-moisture/aqueous conditions, which is important for LHP NC-based optoelectronic devices. However, it is still a challenge to prepare high-quality LHP/chalcogenide core/shell NCs with moisture/aqueous stability. In this work, a surface-defect-induced strategy is carried out to facilitate the adsorption of Br- ions and subsequently Zn2+ ions to preform a bipolar surface, which reduces the energy barrier at the CsPbBr3/ZnS interface and promotes the epitaxial growth of the ZnS shell layer. The aqueous stability of the as-received NCs shows an increase of over 12 times compared to that of the original one. Likewise, Mn2+ ions are introduced to further reduce the geometric symmetry mismatch and defect density at the CsPbBr3/ZnS interface. Interestingly, aqueous stability characterizations illustrate negligible degradation even after 230 min of ultrasonication, suggesting their outstanding stability. This work proposes an effective approach to prepare high-quality LHP/chalcogenide core/shell NCs, which possess great potential in the fabrication of stable optoelectronic devices.

Low-Frequency Raman Study of Large-Area Twisted Bilayers of WS2 Stacked by an Etchant-Free Transfer Method.

Monolayer transition metal dichalcogenides have strong intracovalent bonding. When stacked in multilayers, however, weak van der Waals interactions dominate interlayer mechanical coupling and, thus, influence their lattice vibrations. This study presents the frequency evolution of interlayer phonons in twisted WS2 bilayers, highly subject to the twist angle. The twist angle between the layers is controlled to modulate the spacing between the layers, which, in turn, affects the interlayer coupling that is probed by Raman spectroscopy. The shifts of high-frequency E2g1 (Γ) and A1g (Γ) phonon modes and their frequency separations are dependent on the twist angle, reflecting the correlation between the interlayer mechanical coupling and twist angle. In this work, we fabricated large-area, twisted bilayer WS2 with a clean interface with controlled twist angles. Polarized Raman spectroscopy identified new interlayer modes, which were not previously reported, depending on the twist angle. The appearance of breathing modes in Raman phonon spectra provides evidence of strong interlayer coupling in bilayer structures. We confirm that the twist angle can alter the exciton and trion dynamics of bilayers as indicated by the photoluminescence peak shift. These large-area controlled twist angle samples have practical applications in optoelectronic device fabrication and twistronics.

Optical grade transformation of monolayer transition metal dichalcogenides via encapsulation annealing.

Monolayer transition metal dichalcogenides (TMDs) have emerged as highly promising candidates for optoelectronic applications due to their direct band gap and strong light-matter interactions. However, exfoliated TMDs have demonstrated optical characteristics that fall short of expectations, primarily because of significant defects and associated doping in the synthesized TMD crystals. Here, we report the improvement of optical properties in monolayer TMDs of MoS2, MoSe2, WS2, and WSe2, by hBN-encapsulation annealing. Monolayer WSe2 showed 2000% enhanced photoluminescence quantum yield (PLQY) and 1000% increased lifetime after encapsulation annealing at 1000 °C, which are attributed to dominant radiative recombination of excitons through dedoping of monolayer TMDs. Furthermore, after encapsulation annealing, the transport characteristics of monolayer WS2 changed from n-type to ambipolar, along with an enhanced hole transport, which also support dedoping of annealed TMDs. This work provides an innovative approach to elevate the optical grade of monolayer TMDs, enabling the fabrication of high-performance optoelectronic devices.

Patterned growth of AgBiS2 nanostructures on arbitrary substrates for broadband and eco-friendly optoelectronic sensing.

The patterning of functional nanomaterials shows a promising path in the advanced fabrication of electronic and optoelectronic devices. Current micropatterning strategies are indispensable for post-etching/liftoff processes that contaminate/damage functional materials. Herein, we developed an innovative, low-temperature, post-liftoff-free, seed-confined fabricating strategy that can tackle this issue, thus achieving designated patterns of flower-shaped AgBiS2 nanostructures at either micro- or macro-scale on arbitrary substrates that are either rigid or flexible. Made of patterned AgBiS2 nanostructures, the photoconductor shows broadband (320 nm-2200 nm), sensitive (Rpeak = 1.56 A W-1), and fast (less than 100 μs) photoresponses. Furthermore, single-pixel raster-scanning and 28 × 12 focal plane array imaging were performed to demonstrate reliable and resolved electrical responses to optical patterns, showcasing the potential of the photoconductor in practical imaging applications. Notably, the patterning process enables strain-releasing micro-structures, which lead to the fabrication of a flexible photodetector with high durability upon over 1000 bending/recovering testing cycles. This study provides a simple, low-temperature, and eco-friendly strategy to address the current challenges in non-aggressive micro-fabrication and arbitrary patterning of semiconductors, which are promising to meet the development of further emerging technologies in scalable and wearable optoelectronic sensors.

Enabling white color tunability in complex 3D-printed composites by using lead-free self-trapped exciton 2D perovskite/carbon quantum dot inks.

The generation of stable white light emission using lead-free perovskites remains a huge challenge in the development of future display and lighting technologies, due to fast material deterioration and the decrease of the color quality. In this work, we report a combination of diverse types of 2D A2SnX4 (A = bulky cation, X = Br, I) perovskites exhibiting self-trapped exciton (STE) emission and blue luminescent carbon quantum dots (CQDs), with the purpose of generating A2SnX4/CQD inks with a broadband emission in the visible region and a tunable white light color. By varying the concentration of the 2D perovskite, the white emission of the mixtures is modulated to cool, neutral, and warm tonalities, with a PL quantum yield up to 45%. From the combinations, the PEA2SnI4/CQD-based ink shows the longest stability, due to suitable surface ligand passivation provided by the capping ligands covering the CQDs, compensating the defect sites in the perovskite. Then, by incorporating the PEA2SnI4/CQDs inks into an acrylate polymer matrix, the quenching of the PL component from the perovskite was restrained, being stable for >400 h under ambient conditions and at a relative humidity of ∼50%, and allowing the preparation of complex 3D-printed composites with stable white emission tonalities. This contribution offers an application of STE-based Sn-perovskites to facilitate the future fabrication of lead-free white-light optoelectronic devices.

Heterointerface engineering of layered double hydroxide/MAPbBr3 heterostructures enabling tunable synapse behaviors in a two-terminal optoelectronic device.

Solution-processable semiconductor heterostructures enable scalable fabrication of high performance electronic and optoelectronic devices with tunable functions via heterointerface control. In particular, artificial optical synapses require interface manipulation for nonlinear signal processing. However, the limited combinations of materials for heterostructure construction have restricted the tunability of synaptic behaviors with simple device configurations. Herein, MAPbBr3 nanocrystals were hybridized with MgAl layered double hydroxide (LDH) nanoplates through a room temperature self-assembly process. The formation of such heterostructures, which exhibited an epitaxial relationship, enabled effective hole transfer from MAPbBr3 to LDH, and greatly reduced the defect states in MAPbBr3. Importantly, the ion-conductive nature of LDH and its ability to form a charged surface layer even under low humidity conditions allowed it to attract and trap holes from MAPbBr3. This imparted tunable synaptic behaviors and short-term plasticity (STP) to long-term plasticity (LTP) transition to a two-terminal device based on the LDH-MAPbBr3 heterostructures. The further neuromorphic computing simulation under varying humidity conditions showcased their potential in learning and recognition tasks under ambient conditions. Our work presents a new type of epitaxial heterostructure comprising metal halide perovskites and layered ion-conductive materials, and provides a new way of realizing charge-trapping induced synaptic behaviors.