Fabrication Of Nanoelectronic Devices Research Articles

Nanopatterning of GeTe phase change films via heated-probe lithography.

The crystallization of amorphous germanium telluride (GeTe) thin films is controlled with nanoscale resolution using the heat from a thermal AFM probe. The dramatic differences between the amorphous and crystalline GeTe phases yield embedded nanoscale features with strong topographic, electronic, and optical contrast. The flexibility of scanning probe lithography enables the width and depth of the features, as well as the extent of their crystallization, to be controlled by varying probe temperature and write speed. Together, these technologies suggest a new approach to nanoelectronic and opto-electronic device fabrication.

Direction-controlled growth of nickel nanowire between electrodes with the assistance of magnetic field

This paper proposes a novel bridging technique for the direction-controlled growth of nickel nanowires between pre-fabricated Au electrodes under magnetic field. The nanowires grew on the tip of an electrode with the assistance of an external magnetic field. The nanowires, about 150 nm in diameter and a few of micrometers in length, had high uniformity and grew spontaneously along the direction of the magnetic field. The growth direction of the nanowires was along the magnetic field gradient. Transport measurements show Coulomb blockade behavior. The nanowire interconnections yield potential barriers to carrier transport between the nanowires and the electrodes. Understanding and using the effects will allow the controlled fabrication of nanoelectronic devices in the near future.

Schottky barrier and contact resistance of InSb nanowire field-effect transistors

Understanding of the electrical contact properties of semiconductor nanowire (NW) field-effect transistors (FETs) plays a crucial role in the use of semiconducting NWs as building blocks for future nanoelectronic devices and in the study of fundamental physics problems. Here, we report on a study of the contact properties of Ti/Au, a widely used contact metal combination, when contacting individual InSb NWs via both two-probe and four-probe transport measurements. We show that a Schottky barrier of height is present at the metal–InSb NW interfaces and its effective height is gate-tunable. The contact resistance () in the InSb NWFETs is also analyzed by magnetotransport measurements at low temperatures. It is found that in the on-state exhibits a pronounced magnetic field-dependent feature, namely it is increased strongly with increasing magnetic field after an onset field . A qualitative picture that takes into account magnetic depopulation of subbands in the NWs is provided to explain the observation. Our results provide solid experimental evidence for the presence of a Schottky barrier at Ti/Au–InSb NW interfaces and can be used as a basis for design and fabrication of novel InSb NW-based nanoelectronic devices and quantum devices.

Enhanced cold wall CVD reactor growth of horizontally aligned single-walled carbon nanotubes

Synthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1-2 tubes/μm with high growth quality as shown by Raman analysis.

Recent Research Progress of Carbon Nanotube Arrays Prepared by Plasma Enhanced Chemical Vapor Deposition Method

Preparing carbon nanotube (CNT) arrays by plasma enhanced chemical vapor deposition (PECVD) method can dramatically reduce the deposition temperature, which makes it possible for in-situ fabrication of CNT-based nanoelectronic devices. In this paper, up to date research progress of CNT arrays prepared by PECVD method was presented, including radio frequency PECVD, direct current PECVD and microwave PECVD. Then, morphology and quality of CNT arrays were compared. In the end, we analyzed the possible challenges encountered through CNT array preparation by PECVD method at the moment and in the future.

Facile synthesis of Co/RGO nanocomposite for methylene blue dye removal

In the present study, we report a facile and efficient method for the anchoring of cobalt nanoparticles (Co NPs) on reduced graphene oxide (RGO) sheets in presence of cationic surfactant cetyltrimethyl ammonium bromide (CTAB) and dispersing agent polyvinylpyrrolidone (PVP). Co NPs were decorated on RGO by the simultaneous reduction of Co2+ ions and graphene oxide (GO) under reducing condition of sodium borohydride (NaBH4) at room temperature (RT). The formation Co NPs and the reduction of GO sheets was confirmed by the X-ray diffraction (XRD) technique. The surface morphology was characterized by scanning electron microscopy (SEM) technique. The catalytic activity of Co/RGO nanocomposites was investigated for removal of methylene blue (MB) dye from water. Moreover, I/V characteristics of Co/RGO showed remarkable increment in current value compare to GO under applied bias range of -10 to + 10 V at RT (with typical on/off the resistive current), suggests their use for nanoelectronic device fabrication also.

Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

Tuning the work function of monolayer graphene on 4H-SiC (0001) with nitric acid

Chemical doping of graphene is a key process for the modulation of its electronic properties and the design and fabrication of graphene-based nanoelectronic devices. Here, we study the adsorption of diluted concentrations of nitric acid (HNO3) onto monolayer graphene/4H-SiC (0001) to induce a variation of the graphene work function (WF). Raman spectroscopy indicates an increase in the defect density subsequent to the doping. Moreover, ultraviolet photoemission spectroscopy (UPS) was utilized to quantify the WF shift. UPS data show that the WF of the graphene layer decreased from 4.3 eV (pristine) down to 3.8 eV (30% HNO3) and then increased to 4.4 eV at 100% HNO3 concentration. These observations were confirmed using density functional theory (DFT) calculations. This straightforward process allows a large WF modulation, rendering the molecularly modified graphene/4H-SiC(0001) a highly suitable electron or hole injection electrode.

Role of vacancies in tuning the electronic properties of Au-MoS2 contact

Understanding the electronic properties between molybdenum disulfide (MoS2) and metal electrodes is vital for the designing and realization of nanoelectronic devices. In this work, influence of intrinsic vacancies in monolayer MoS2 on the electronic structure and electron properties of Au-MoS2 contacts is investigated using first-principles calculations. Upon formation of vacancies in monolayer MoS2, both tunnel barriers and Schottky Barriers between metal Au and monolayer MoS2 are decreased. Perfect Au-MoS2 top contact exhibits physisorption interface with rectifying character, whereas Au-MoS2 contact with Mo-vacancy shows chemisorption interface with Ohmic character. Partial density of states and electron density of defective Au-MoS2 top contacts are much higher than those of perfect one, indicating the lower contact resistance and higher electron injection efficiency of defective Au-MoS2 top contacts. Notably, Mo-vacancy in monolayer MoS2 is beneficial to get high quality p-type Au-MoS2 top contact, whereas S-vacancy in monolayer MoS2 is favorable to achieve high quality n-type Au-MoS2 top contact. Our results provide guidelines for designing and fabrication of novel 2D nanoelectronic devices.

Modulating Electrical Properties of InAs Nanowires via Molecular Monolayers.

In recent years, InAs nanowires have been demonstrated with the excellent electron mobility as well as highly efficient near-infrared and visible photoresponse at room temperature. However, due to the presence of a large amount of surface states that originate from the unstable native oxide, the fabricated nanowire transistors are always operated in the depletion mode with degraded electron mobility, which is not energy-efficient. In this work, instead of the conventional inorganic sulfur or alkanethiol surface passivation, we employ aromatic thiolate (ArS(-))-based molecular monolayers with controllable molecular design and electron density for the surface modification of InAs nanowires (i.e., device channels) by simple wet chemistry. More importantly, besides reliably improving the device performances by enhancing the electron mobility and the current on-off ratio through surface state passivation, the device threshold voltage (VTh) can also be modulated by varying the para-substituent of the monolayers such that the molecule bearing electron-withdrawing groups would significantly shift the VTh towards the positive region for the enhancement mode device operation, in which the effect has been quantified by density functional theory calculations. These findings reveal explicitly the efficient modulation of the InAs nanowires' electronic transport properties via ArS(-)-based molecular monolayers, which further elucidates the technological potency of this ArS(-) surface treatment for future nanoelectronic device fabrication and circuit integration.

Block Co-Polymers for Nanolithography: Rapid Microwave Annealing for Pattern Formation on Substrates

The integration of block copolymer (BCP) self-assembled nanopattern formation as an alternative lithographic tool for nanoelectronic device fabrication faces a number of challenges such as defect densities, feature size, pattern transfer, etc. Key barriers are the nanopattern process times and pattern formation on current substrate stack layers such as hard masks (e.g., silicon nitride, Si3N4). We report a rapid microwave assisted solvothermal (in toluene environments) self-assembly and directed self-assembly of a polystyrene-block-polydimethylsiloxane (PS-b-PDMS) BCP thin films on planar and topographically patterned Si3N4 substrates. Hexagonally arranged, cylindrical structures were obtained and good pattern ordering was achieved. Factors affecting BCP self-assembly, notably anneal time and temperature, were studied and seen to have significant effects. Graphoepitaxy within the topographical structures provided long range, translational alignment of the patterns. The effect of surface topography feature size and spacing was investigated. The solvothermal microwave based technique used to provide periodic order in the BCP patterns showed significant promise and ordering was achieved in much shorter periods than more conventional thermal and solvent annealing methods. The implications of the work in terms of manufacturing technologies are discussed.

Edge configurational effect on band gaps in graphene nanoribbons

In this Letter, we put forward a resolution to the prolonged ambiguity in energy band gaps between theory and experiments of fabricated graphene nanoribbons (GNRs). Band structure calculations using density functional theory are performed on oxygen passivated GNRs supercells of customized edge configurations without disturbing the inherent sp2 hybridization of carbon atoms. Direct band gaps are observed for both zigzag and armchair GNRs, consistent with the experimental reports. In addition, band gap values of GNRs scattered about an average value curve for a given crystallographic orientation are correlated with their width on basis of the edge configurations elucidates the band gaps in fabricated GNRs. We conclude that edge configurations of GNRs significantly contribute to band gap formation in addition to its width for a given crystallographic orientation, and would play a crucial role in band gap engineering of GNRs for future research works on fabrication of nanoelectronic devices.

Focused energy field method for the localized synthesis and direct integration of 1D nanomaterials on microelectronic devices.

In the focused energy field method, localized heating, and convective mass transfer in a liquid precursor realizes selective synthesis and direct integration of 1D nanomaterials as well as their surface functionalization, all in a low-temperature, liquid environment. This allows facile fabrication of 1D nanomaterial-based nanoelectronic devices.

Combining protein-shelled platinum nanoparticles with graphene to build a bionanohybrid capacitor.

The electronic properties of biomolecules and their hybrids with inorganic materials can be utilized for the fabrication of nanoelectronic devices. Here, we report the charge transport behavior of protein-shelled inorganic nanoparticles combined with graphene and demonstrate their possible application as a bionanohybrid capacitor. The conductivity of PepA, a bacterial aminopeptidase used as a protein shell (PS), and the platinum nanoparticles (PtNPs) encapsulated by PepA was measured using a field effect transistor (FET) and a graphene-based FET (GFET). Furthermore, we confirmed that the electronic properties of PepA-PtNPs were controlled by varying the size of the PtNPs. The use of two poly(methyl methacrylate) (PMMA)-coated graphene layers separated by PepA-PtNPs enabled us to build a bionanohybrid capacitor with tunable properties. The combination of bioinorganic nanohybrids with graphene is regarded as the cornerstone for developing flexible and biocompatible bionanoelectronic devices that can be integrated into bioelectric circuits for biomedical purposes.

Investigation on the electronic transport properties of MgS nanotube based molecular devices – a first-principles study

The electronic transport properties of pure MgS nanotube based molecular devices, Mn-substituted nanotubes and Se-substituted nanotubes are investigated using density functional theory. The state of the art of this work is to study the transport properties of MgS nanotubes with substitution impurities across electrodes. The electronic transport properties are discussed in terms of device density of states and transmission spectrum of MgS nanotubes. The effects of Mn substitution and Se substitution in nanotubes are studied. The major contribution to density of states arises only from p orbitals in MgS nanotubes. The substitution effect and bias voltages also have influence in the density of states. The transmission spectrum provides information about the transmission of electrons along the nanotube. The information provided in this work gives a clear vision to fine-tune MgS nanostructures with improved transport property in nanoelectronic device fabrication.

Comprehensive study of graphene grown by chemical vapor deposition

Graphene was grown on Cu foil by chemical vapor deposition with CH4 as carbon source, and then was transferred onto various substrates for device applications. The structural and optical properties of graphene were investigated, comprehensively. Raman spectra indicate as-grown and transferred graphene films are homogenous monolayer graphene. Optical microscopy and scanning electron microscopy images reveal wrinkle-free and smooth surface of transferred graphene, confirming the high quality of graphene. In addition, the transferred graphene on glass exhibits excellent transmittances in the visible region (89.3 % at ~500 nm). Therefore, the results present the controllable approaches to achieve as-grown and transferred high quality graphene for the fabrication of multiple nanoelectronic devices.

Improving the adhesion of hydrogen silsesquioxane (HSQ) onto various substrates for electron-beam lithography by surface chemical modification

Hydrogen silsesquioxane (HSQ) is an excellent negative-tone resist for electron-beam lithography and sub-5-nm-half-pitch patterns can be achieved using high contrast development processes. However, the quality of HSQ adhesion on different types of substrates varies, thus limiting the function of HSQ in etching masks or metal lift-off process on various substrates. In this study, we proposed several chemical modification methods to improve HSQ adhesion resist onto Si, Cr, Cu, Mo, Au, and indium-tin oxide (ITO) substrates. HSQ adhesion patterns onto Au substrates was significantly improved by utilizing (3-mercaptopropyl) trimethoxysilane (MPTMS) and Poly (diallyldimethylammonium) chloride (PDDA) modifications. The (3-Aminopropyl) triethoxysilane (APTES) enhances the HSQ adhesion on Mo substrates. APTES and PDDA improve HSQ adhesion on Si, Cr, Cu and ITO. The improved adhesive HSQ nanopatterns on these substrates may benefit the fabrication of various nanophotonic and nanoelectronic devices.

Large-scale assembly of Cu/CuO nanowires for nano-electronic device fabrication

To improve the efficiency of nano-electronic device fabrication, a new method named floating electrical potential assembly is proposed to realize large-scale assembly of Cu/CuO nanowires. The simulation of floating electrical potential distribution on the micro-electrode chip is performed by COMSOL software, and the simulation result shows that the coupled electrical potential on the floating drain electrodes is very close to the original electrical potential applied on the gate electrode, which means that the method can provide di-electrophoresis (DEP) force for all the electrode pairs at one time, thus realizing large-scale assembly at one time. With Cu/CuO nanowires well dispersed and micro-electrode chip fabrication, nanowires assembly experiments are performed and the experimental results show that Cu/CuO nanowires are assembled at hundreds of micro-electrodes pairs at one time, and the success rate of nanowires assembly also reaches 90%.

The influence of gold surface texture on microglia morphology and activation.

Microglial cells play a critical role in the propagation of neuroinflammation in the central nervous system. Microglia sense and respond to environmental signals including chemical, physical and biological cues from the surrounding cell/tissue components. In this project, our goal was to examine the effects of surface texture on BV-2 microglia morphology and function by comparing flat and nanoporous gold (np-Au) surfaces to the more conventional glass. The biocompatibility of np-Au with microglia was evaluated using functional cell assays and high resolution imaging with scanning electron microscopy (SEM). Microglia seeded on glass, ultra-flat gold (UF-Au), ultra-thin (UT) np-Au and np-Au monolith were adherent to all surfaces and their viability was not compromised as assessed by multiple toxicity assays. SEM revealed detailed morphological characteristics of adherent microglia and indicated few dramatic changes as a result of the different surfaces. Microglia proliferation was hampered by np-Au monolith but less by UT np-Au and not at all on UF-Au or glass. Microglial activation, measured by tumor necrosis factor α (TNFα) production, was fully functional (and equivalent) on all gold surfaces compared to glass. The present findings should help further the understanding of basic microglia biology on textured surfaces and more fully evaluate np-Au as a multi-functional biocompatible material. The knowledge obtained and technology developed will have a significant impact in the fabrication of nanoelectronic devices, chemical sensor development, porous nanostructured materials for BioMEMs/NEMs integration, and functional biomaterial coatings for drug delivery.

Structure manipulation of graphene by hydrogenation

Chemical functionalization is one of the most promising routes to manipulate the electronic properties of graphene. Through single-sided hydrogenation on graphene, quantized specific bending angles (from 0° to 180°) can be obtained, thus providing a controllable knob to tune the hydrogenated structure. Using molecular dynamics simulations, we show that hydrogenation can be used to manipulate graphene into a variety of well-defined geometrical configurations by precisely controlling the size, location and direction of hydrogenation. This work suggests that hydrogenation is a possible route to achieve complex structures without cutting or joining process during graphene-based nanoelectronic device fabrication.