Abstract

Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory. Energy band structures and density of states of optimized zigzag (5, 0), armchair (3, 3), and chiral (4, 2) structures of CNT and BNNT are calculated. Oxygen doping in zigzag CNT exhibits a reduction in metallicity with opening of band gap in near-infrared region while metallicity is enhanced in armchair and chiral CNTs. Unlike oxygen-doped CNTs, energy bands are drastically modulated in oxygen-doped zigzag and armchair BNNTs, showing the nanotubes to have metallic behaviour. Furthermore, oxygen impurity in chiral BNNT induces narrowing of band gap, indicating a gradual modification of electronic band structure. This study underscores the understanding of different electronic properties induced in CNTs and BNNTs under oxygen doping, and has potential in fabrication of various nanoelectronic devices.

Highlights

  • Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study

  • More theoretical studies on effect of oxygen doping on CNTs and boron nitride nanotubes (BNNTs), are needed to understand evolution of different electronic properties, that may be utilized in new type of devices

  • The plane wave cut-off energy is set to 320 eV and the exchange correlation effects are described by generalized gradient approximation (GGA)13 proposed by Perdew- Burke-Ernzerhof (PBE)

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Summary

Introduction

Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes: A comparative study. Influence of oxygen impurity on electronic properties of carbon and boron nitride nanotubes (CNTs and BNNTs) is systematically studied using first principle calculations based on density functional theory.

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