Practical Fabrication Research Articles

Theoretically Enhance the Vertical Light Extraction Efficiency of the AlGaN-Based Nanowire Photonic Crystal Ultraviolet Light-Emitting Diodes by Selecting the Band Gap

Nanowire photonic crystal (PhC) structure is one of promising approaches to enhance vertical light extraction efficiency (LEE) of ultraviolet light emitting diodes (UV LEDs). There are lots of investigations to study the structure of nanowire UV LEDs by using the finite-difference time-domain (FDTD) method. The optimal LEE are obtained by using some optimization algorithms. However, it needs a broad window, not the best values of geometrical parameters of nanowires in practical fabrication. In this paper, the vertical LEE of UV LEDs are theoretically enhanced by selecting the band gaps of AlGaN-based nanowire PhC structure. It illustrates that all the gaps can inhibit the horizontal propagation of light. However, the inhibiting ability of Gap 1 are weaker than them of Gap 2 and Gap 3. The reason is that the radii of nanowires in Gap 1 are too small to support enough guided modes. As a comparison, both Gap 2 and Gap 3 can efficiently inhibit the radiated mode propagation, and finally enhance the vertical LEE. In addition, the variations of height, number, and refractive index of nanowires on vertical LEE and optical band gaps are discussed. This work has benefits for the practical production of nanowire PhC UV LEDs.

Graphene kirigami membrane with superior theoretical permeability and adjustable selection capability

Membrane plays a central role in molecule separation and selection. However, most artificial membranes utilise a fixed passage size and only effective for limited molecule types. Here, via a large series of molecular and first-principles calculations, we reveal the potential of graphene kirigami (GK), a novel structure with nanoscale incisions on one-atom-thick graphene, which can transform into a three-dimensional structure under deformation, as an ultra-membrane for highly adjustable molecule selection and the practical fabrication feasibility of GK-like membranes using a novel selective tearing process on initially defected graphene. Facilitated by the high stretchability of GK-based membranes, we demonstrate a wide range of gas selection capability on a single membrane. The interaction energy of adsorbed gas molecule also shows that the unique geometry of the pores on GK enables a new adsorption channelling mechanism that enhances molecular separation. Compared with nanoporous graphene, the dynamic gas penetration test shows that various GK membranes are capable of 30 times higher pore-size adjustability and up to 1.5–3.4 times higher gas separation rate. The GK ultra-membrane opens new venues for numerous applications in CO2 capture and storage, water desalination, wastewater treatment, hazardous waste containment system, chemical processing, bionics, and pharmaceutical and medical devices.

Non-viral nanoparticles for RNA interference: Principles of design and practical guidelines.

Ribonucleic acid interference (RNAi) is an innovative treatment strategy for a myriad of indications. Non-viral synthetic nanoparticles (NPs) have drawn extensive attention as vectors for RNAi due to their potential advantages, including improved safety, high delivery efficiency and economic feasibility. However, the complex natural process of RNAi and the susceptible nature of oligonucleotides render the NPs subject to particular design principles and requirements for practical fabrication. Here, we summarize the requirements and obstacles for fabricating non-viral nano-vectors for efficient RNAi. To address the delivery challenges, we discuss practical guidelines for materials selection and NP synthesis in order to maximize RNA encapsulation efficiency and protection against degradation, and to facilitate the cytosolic release of oligonucleotides. The current status of clinical translation of RNAi-based therapies and further perspectives for reducing the potential side effects are also reviewed.

Development of a flexible dielectric-barrier-discharge plasma actuator fabricated by inkjet printing using silver nanoparticles-based ink

We demonstrate that a flexible dielectric-barrier-discharge (DBD) plasma actuator fabricated by an inkjet printing process using metallic inks generates stable surface discharge and ionic wind for active airflow control. The establishment of a practical fabrication method for DBD plasma actuators is a critical issue to be tackled for industrial applications. The inkjet process requires just the printing of the metallic inks and sintering processes while the conventional photolithography technology requires a lot of processes for the fabrication of the DBD plasma actuators. The electrical and mechanical characteristics of a multi-stage DBD plasma actuator fabricated by this printed electronics technology are investigated and are compared with the DBD plasma actuator made by the conventional method using copper tape. The DBD plasma actuator developed in this study induces a similar or even stronger ionic wind than that of the conventional one. Also, a thin exposed electrode (≃1 μm), which is preferable in terms of airflow control applications, is achieved by the inkjet printing process. The development of the fabrication method using printed electronics expands the application field of the DBD plasma actuator, including complex curved surfaces and full-scale size applications.

Carrier density and thickness-dependent proximity effect in doped-topological-insulator–metallic-ferromagnet bilayers

We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of Bi$_{0.8}$Sb$_{1.2}$Te$_{3}$ which is a highly hole-doped topological insulator. Using transport measurements and a modified Hikami-Larkin-Nagaoka model, we show that the ferromagnet shortens significantly the effective coherence length of the surface states, suggesting that a gap is opened at the Dirac point. We show that the magnetically induced gap persists on surface states which are separated from the magnet by a topological insulator layer as thick as 170 [nm]. Furthermore, the size of the gap is found to be proportional to the magnetization that we extract from the anomalous Hall effect. Our results give information on the ties between carrier density, induced magnetization and magnetically induced gap in topological insulator/ferromagnet bilayers. This information is important both for a theoretical understanding of magnetic interactions in topological insulators and for the practical fabrication of such bilayers, which are the basis of various suggested technologies, such as spintronic devices, far infra-red detectors etc.

Numerical Study on Effect of Current Injection Methods on Terminal Resistance of Superconducting Compact Cables

Implement of low-resistive and compact terminal between superconducting cables and bus-bars is one of the most important challenges for industrial application of conductor on round core (CORC) cables. In this paper, a three-dimensional numerical model capable of simulating the terminal resistance and joint resistance of CORC cables is developed and validated by experimental data. On basis of this, the effect of different current injection methods on terminal resistance and the effect of trimming of HTS tapes on current distribution are discussed in this paper. Results shows a wide range of variation in terminal resistance and the homogeneity of current distribution. We expect conclusions obtained from this paper could provide guidelines for commercial and practical terminal fabrication of CORC cables.

Superb VOCs capture engineering carbon adsorbent derived from shaddock peel owning uncompromising thermal-stability and adsorption property

We report novel carbonaceous absorbent derived from shaddock Peel affording high thermal stability and superhigh adsorptive capacity and selectivity toward capturing polluted VOCs gas including benzene and toluene, far outperforming other some reported adsorbents. High applied thermal-stability and superior structural property for activated carbon adsorbent are extremely promising, which also is the determining short slab in volatile organic compounds (VOCs) adsorption applications. Herein, we develop the outstanding engineering carbon adsorbents from waste shaddock peel which affords greatly-enhanced thermal-stability and super structural property ( S Lang = 4962.6 m 2 ·g −1 , V micro = 1.67 cm 3 ·g −1 ). Such character endows the obtained adsorbent with ultrahigh adsorption capture performance of VOCs specific to benzene (16.58 mmol·g −1 ) and toluene (15.50 mmol·g −1 ), far beyond traditional zeolite and activated carbon even MOFs materials. The structural expression characters were accurately correlated with excellent adsorption efficiency of VOCs by studying synthetic factor-controlling comparative samples. Ulteriorly, adsorption selectivity prediction at different relative humidity was demonstrated through DIH (difference of the isosteric heats), exceedingly highlighting great superiority (nearly sixfold) in selective adsorption of toluene compared to volatile benzene. Our findings provide the possibility for practical industrial application and fabrication of waste biomass-derived outstanding biochar adsorbent in the environmental treatment of threatening VOCs pollutants.

Dielectric, magnetic and optical study of La- doped BFO-BST ceramic for multifunctional applications

Composites having magnetostriction and piezoelectric behavior envisioned to reach the destination of room temperature magneto-electric (ME) coupling for practical device fabrications. For better ME coupling it is essential to acquire higher values of magnetostriction, Néel temperature (TN), resistivity and magnetization of magnetic composites. In this context we are investigating structural, dielectric, electrical and magnetic behavior of 0.5(Bi0.75La0.25Fe)O3-0.5(Ba0.5Sr0.5Ti)O3 (BLF-BST). Through Rietveld analysis of X-ray diffraction data it suggests composite have single phase orthorhombic crystal structure with pbnm space group. The dielectric study reveals both magneto-dielectric transition and transport properties investigated through impedance spectral analysis which suggests the present candidate has moderate Curie temperature (TC), high resistivity. Room temperature magnetic study reflects ferromagnetic retentively (Mr) (0.04 emu/gram) with coercive field (Hc)~3 kOe which looks better for practical device applications.

Waxing the soot: Practical fabrication of all-organic superhydrophobic coatings from candle soot and carnauba wax

Commercial application of superhydrophobic coatings is hindered by insufficient durability and use of materials with high costs and limited availability. In this study, we report a robust water impact resistant all-organic superhydrophobic coating that is prepared from low-cost colloidal dispersion composed of carnauba wax and candle soot. The colloidal dispersion is stable and can be spray-coated onto virtually any surfaces. The coated surfaces exhibit superhydrophobicity with a water contact angle of 172° and sliding angle of 3°, and retain superhydrophobicity even after 400 cycles of continuous water spray with an impact pressure of 7.4 kPa. The synergetic combination of candle soot and carnauba wax, together with the deposition method, solvent used to disperse materials, and spray-coating distance are critically important for the superhydrophobicity and mechanical durability. The robustness of the coatings emerges from the two-tier hierarchical structure of the dried particles which is formed by evaporation induced self-assembly of wax molecules and candle soot nanoparticles. Applications in self-cleaning and oil/water separation are demonstrated, where a coated membrane can be continuously operated, solely driven by gravity, and can separate common organic liquids such as hexane and toluene from water with a separation efficiency of more than 90 % at a high flux of 1061 L / (m2 h).

Characterizing the foam-shell microstructure of industrial ultra-light foamed concrete cast under different temperatures

Ultra-lightweight foamed concrete (ULFC), as the most important component of engineered material arresting system (EMAS) for air plane landing safety, faces challenges in quality controls during materials fabrication. This study focused on the microstructure, penetration strength and foaming mechanisms of ULFC blocks cast at 35 °C, 37 °C and 40 °C based on practical factory fabrications. Multi-scale experiments were used to characterize the thermal evolution, strength, foam and shell structure, micro pores of the ULFC materials. Thermal data showed that increasing the casting temperature greatly shortened the induction period, raised the peak temperature, indicating the accelerated hydration process at the raised temperature. X-ray computed tomography data implied that, while raising the void number, compactness and sphericity, the temperature rises depressed the average pore size. Scanning electron microscopy and Nitrogen gas sorption tests showed that the void shell thickness decreased and the microstructure was more porous at a higher casting temperature. The rises of casting temperature were always harmful to the material strength, but had little effects on the chemical mineral formation of the solid matrix. Overall, the shell thickness and the micro pore structure of cement matrix, together with the porosity and pore geometries, jointly impacted the strength of ULFC. The findings of this work would improve the materials designs and fabrication procedures towards the better manipulation of foam structure to meet the requirements of EMAS buffer material.

Overcoming Phase‐Purity Challenges in Complex Metal Oxide Photoelectrodes: A Case Study of CuBi2O4

AbstractThe widespread application of solar‐water‐splitting for energy conversion depends on the progress of photoelectrodes that uphold stringent criteria from photoabsorber materials. After investigating almost all possible elemental and binary semiconductors, the search must be expanded to complex materials. Yet, high structural control of these materials will become more challenging with an increasing number of elements. Complex metal‐oxides offer unique advantages as photoabsorbers. However, practical fabrication conditions when using glass‐based transparent conductive‐substrates with low thermal‐stability impedes the use of common synthesis routes of high‐quality metal‐oxide thin‐film photoelectrodes. Nevertheless, rapid thermal processing (RTP) enables heating at higher temperatures than the thermal stabilities of the substrates, circumventing this bottleneck. Reported here is an approach to overcome phase‐purity challenges in complex metal‐oxides, showing the importance of attaining a single‐phase multinary compound by exploring large growth parameter spaces, achieved by employing a combinatorial approach to study CuBi2O4, a prime candidate photoabsorber. Pure CuBi2O4 photoelectrodes are synthesized after studying the relationship between the crystal‐structures, synthesis conditions, RTP, and properties over a range of thicknesses. Single‐phase photoelectrodes exhibit higher fill‐factors, photoconversion efficiencies, longer carrier lifetimes, and increased stability than nonpure photoelectrodes. These findings show the impact of combinatorial approaches alongside radiative heating techniques toward discovering highly efficient multinary photoabsorbers.

ReS2 Nanosheets with In Situ Formed Sulfur Vacancies for Efficient and Highly Selective Photocatalytic CO2 Reduction

Artificial photosynthesis can provide valuable fuels and positively impact greenhouse effects, via transforming carbon dioxide (CO2) and water (H2O) into hydrocarbons using semiconductor‐based photocatalysts. However, the inefficient charge‐carrier dissociation and transportation as well as the lack of surface active sites are two major drawbacks to boosting their activity and selectivity in photocatalytic CO2 reduction. Recently, ReS2 has received tremendous attention in the photocatalysis area due to its intriguing physicochemical properties. Nevertheless, the application of ReS2 in photocatalytic CO2 reduction is scarcely covered. Herein, a heterojunction formed between ReS2 nanosheets and CdS nanoparticles is reported, achieving an apparently raised CO production of 7.1 μmol g−1 and high selectivity of 93.4%. The as‐prepared ReS2/CdS heterojunction exhibits strengthened visible‐light absorption, high‐efficiency electron–hole pair separation/transfer, and increased adsorption/activation/reduction of CO2 on in situ created sulfur vacancies of ReS2, thus all favoring CO2 photoreduction. These are corroborated by advanced characterization techniques, e.g., synchrotron‐based X‐ray absorption near‐edge structure, and density functional theory–based computations. The findings will be of broad interest in practical design and fabrication of surface active sites and semiconductor heterojunctions for applications in catalysis, electronics, and optoelectronics.

レーザ・アークハイブリッド溶接を用いた長尺完全溶込みＴ継手の実用的施工法に関する諸検討

レーザ・アークハイブリッド溶接を用いた長尺完全溶込みＴ継手の実用的施工法に関する諸検討

Impact of gold nanoparticles on low-voltage operating GaN ultraviolet photodetector

We report, in this study, the impact of gold nanoparticles on low-voltage operating GaN ultraviolet (UV) photodetector through parameters such as detectivity, responsivity, repeatability, stability, and photo-to-dark current ratios. These studies revealed prominent increases in detectivity and responsivity of the device due to Au nanoparticle application, thus allowing it to detect weaker signals and obtain higher on/off current ratios. After the application of different quantities of Au nanoparticles to the device surface, the investigated photoelectric properties were enhanced reaching a peak detectivity of 1.09 × 1011 Jones and a photo-to-dark current ratio of 486 at 2-V bias. Moreover, the photocurrent increased by two-fold (from 35.3 to 70.6 nA) at a low bias of 0.5 V following the application of the Au nanoparticles to the device surface. The modified GaN photodetector with a remarkable detectivity offers solutions toward improving detectivity of UV photodetectors. In consequence, having established such prosperous properties under relatively low-voltage levels with this practical and cost-effective fabrication route provides a good approach toward a wide range of UV optoelectronic devices.

Form-finding and shape optimization of bio-inspired branching structures based on graphic statics

Structure’s internal force transfer efficiency is the bases of pursuing the creative structural form. This paper reveals the mechanical mechanisms of the bio-inspired branching structures and further presents a numerical form-finding and shape optimization method for bio-inspired branching structures based on graphic statics with the constraints of strength, stiffness of boundary conditions are considered. Efficient structural form is obtained by connecting the internal force equilibrium and the structural performance in designing process. The reciprocal diagrams in graphic statics are used to solve the form-finding problem to generate compression or tension-only tree-like structure. Establishing the formula of the evaluation criteria of internal force transfer efficiency to characterize the structural performances, the criteria is compared with the continuum topology optimization method, the shape of tree-like structure is optimized by maximizing the structural efficiency under static loads. As a result, suitable external constraints can make a structure efficient and improve the structural redundancy, material properties determine the structural form, which in turn affects the structural behavior. Consequently, the interrelation mechanisms between material-property, structural-form, and structure-performance of the highly efficient bio-inspired branching structures are found. The internal force transfer efficiency and the strength and stiffness of boundary condition are the main factors to determine the optimal solution in the topological design exploration of load-bearing structure, these factors could be controlled to obtain the effective and elegant structural form for practical fabrication. The proposed numerical method could provide intuitive understanding and real-time feedback for the optimal solution, avoid the single solution obtained by the conventional optimization techniques and limited control to modify the output topology. Besides, more structural performance (e.g. buckling, vibration) can be considered in the structural designing process.

Doping-Less Tunnel Field Effect Transistor Using Compact-Si-Drain, SiGe-Channel, and Ge-Source

Design rules of the conventional MOSFETs are continuously decreasing, along with the strong requirement of extremely low subthreshold swing level of more than 50 mV/dec at a sub-6-nm node1. As the MOSFET devices cannot meet the demands of key markets, such outstanding electrical features: low-power, high on/off ratio, low off-current, and high on-current, a quantum tunnel FET(TFET) have garnered considerable interest as a crucial alternative to overcome the above issues. However, The TFET has the disadvantages of introducing random dopants fluctuation(RDF) event initially caused by carrier diffusion in the channel region2. Thus, doping-less(DL)-TFET approach using a charge-plasma concept has become highly promising option for use in future TET research areas3,4. In this work, we address a novel device structure and practical fabrication procedure for the sub-10-nm TFET ensuring advanced am-bipolar and ON-state current behaviors on the basis of the well-known charge plasma concept.We experimentally fabricated and analyzed the conventional DL TFET (see Fig. 1(a)). The roughness of the gate oxide and the interface was high. (see Fig. 1(b)) As a result, the DL TFET showed relatively high am-bipolar and low ON-state current characteristics, as shown in Fig. 1(c). The proposed device includes a 3-nm-thick compact-drain(CD) for the efficient suppression of am-bipolar current and hetero-material(HM) of Si(drain)-SiGe(channel)-Ge(source) for the improved ON-state current, where a particular Ge-condensation process developed in our previous work is adapted for the formation of HM. The CD-HM-DL TFET starts with a thin SOI wafer and fin-type structure to facilitate the fabrication process, as seen in Fig. 1(d) and (e). The TCAD simulation findings imply that a silicon band-gap is highly dependent on the drain thickness owing to a quantum size effect and the band-gap energy is found to be a 1.27 eV at about 3-nm-thick silicon. In addition, the am-bipolar current of the 3-nm-thick CD-DL TFET provides an extremely low current (more than 160 times), when compared with that of a conventional doping-less(DL) TFET with 10-nm-thick drain, as displayed in Fig. 1(f). The HM-DL TFET based on the Si(drain)-SiGe(channel)-Ge(source) configuration exhibited a tunnel path of 2.1 nm at a gate voltage 1.5 V, which is 44.7 % lower than the conventional DL-TFET. The ON-state current of the HM-DL-TFET is 4.8 times higher than that of the conventional DL-TFET, as seen Fig. 1(g). When the compact Si-drain, SiGe-channel and Ge- source were applied, in particular, am-bipolar and ON-state characteristics were improved, as evident in Fig. 1(h). The results indicate that the proposed CD-HM-DL TFET may establish a useful and simple route for advanced electrical performance, such as suppressed am-bipolar current and increased ON-state current, which is possibly essential to the realization of low power and high performance applications by using a relatively small number of few fabrication steps. Figure caption Fig. 1. The conventional DL TFET and proposed CD-HM-DL TFET configuration and electrical characteristics (a) DL TFET schematics, (b) TEM Cross-sectional image, (c) I-V curve of DL TFET, (d) CD-HM-DL TFET schematics, (e) The AA’-line cross-sectional view, (f) band-gap energy with Si-thickness and I-V comparison of DL TFET with 3-nm-thick CD TFET (g) I-V comparison of DL TFET with Si(drain)-SiGe(channel)-Ge(source) HM TFET and (h) I-V comparison of DL TFET with CD-HM-DL TFET References J. Ahopelto, G. Ardila, L. Baldi, F. Balestra, D. Belot, G. Fagas, S. De Gendt, D. Demarchi, M. Fernandez-Bolaños, D. Holden, A.M. Ionescu, G. Meneghesso, A. Mocuta, M. Pfeffer, R.M. Popp, E. Sangiorgi, C.M. Sotomayor Torres, Solid State Electronics, vol. 155, pp 7-19, May 2019. doi: 10.1016/j.sse.2019.03.014.M.H. Chiang, J.N. Lin, K. Kim, C.T. Chuang, IEEE Transactions on Electron Devices, vol 54, No. 8, pp. 2055-2060, Aug 2007. doi: 10.1109/TED.2007.901154 R.J.E. Hueting, B. Rajasekharan, C. Salm, J. Schmitz, IEEE electron device letters, vol. 29 No. 12, pp. 1367-1369, Dec 2008. doi: 10.1109/LED.2008.2006864 4. M.J. Kumar, S. Janardhanan, IEEE Transactions on Electron Devices, vol 60, No. 10, pp. 3285-3290, Oct 2013. doi: 10.1109/TED.2013.2276888 Acknowledgment * This research was supported by Brain Korea 21 PLUS Program in 2020, the MOTIE (Ministry of Trade, Industry & Energy 10069063) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. Figure 1

A Theoretical Analysis on the Oxidation and Water Dissociation Resistance on Group-IV Phosphide Monolayers.

Group-IV phosphide monolayers (MP, M=C, Si, Ge and Sn) provide a versatile platform for photocatalysts, as well as optoelectronic and nanoelectronic devices. Herein, comprehensive first-principles calculations and ab initio molecular dynamics (AIMD) simulations were performed to explore their stabilities in the air. We identified that the MP monolayers have excellent mechanical properties and their carrier mobilities are higher than that of phosphorene. The MP monolayers were predicted to possess superior oxidation resistance than the boron phosphide (BP) monolayer based on the proposed donation-backdonation theory. It was observed that the dissociation and chemisorption of a water molecule on the monolayers are kinetically difficult both in the water and in oxygen-water environments involving energy barriers of 1.28-3.48 eV. We also performed AIMD simulations at 300, 1000, 1200 and 1500 K. It is noteworthy that only the carbon phosphide (CP) monolayer can retain an intact structure at 1500 K, while the other three monolayers can just sustain to 1200 K. These results provide a guidance for their practical application and experimental fabrication.

Design and Cold Test of Flat-Roofed Sine Waveguide Circuit for W-Band Traveling-Wave Tube

The W-band flat-roofed sine waveguide (SWG) slow wave circuit was designed and processed in this article. Considering the limitations on present practical fabrication level, sensitivity analysis was performed on the potential influencing factors for the performance of the flat-roofed SWG slow wave structure (SWS). As indicated by the calculation results, the gap between the SWSs and the side-wall strips could have a significant impact on the dispersion, interaction impedance, and the transmission of the entire slow wave circuit. Based on the theoretical analysis, two types of W-band flat-roofed SWG slow wave circuits were fabricated and tested. The side-wall strips of the two circuits are processed with/without rounded corner. The circuit without rounded corner may cause a large gap and severe reflection. In comparison, the other one with rounded corners can make the parts fit tighter, thus minimizing the potential gap. The test results demonstrate that the W-band flat-roofed SWG traveling-wave tube (TWT) possesses a voltage standing wave ratio less than 1.8, which is basically consistent with the simulation results.

Design Space Reparameterization Enforces Hard Geometric Constraints in Inverse-Designed Nanophotonic Devices

Inverse design algorithms are the basis for realizing high-performance, freeform nanophotonic devices. Current methods to enforce geometric constraints, such as practical fabrication constraints, a...

Narrowband and flexible perfect absorber based on a thin-film nano-resonator incorporating a dielectric overlay

We developed a flexible perfect absorber based on a thin-film nano-resonator, which consists of metal–dielectric–metal integrated with a dielectric overlay. The proposed perfect absorber exhibits a high quality (Q-)factor of ~ 33 with a narrow bandwidth of ~ 20 nm in the visible band. The resonance condition hinging on the adoption of a dielectric overlay was comprehensively explored by referring to the absorption spectra as a function of the wavelength and thicknesses of the overlay and metal. The results verified that utilizing a thicker metal layer improved the Q-factor and surface smoothness, while the presence of the overlay allowed for a relaxed tolerance during practical fabrication, in favor of high fidelity with the design. The origin of the perfect absorption pertaining to zero reflection was elucidated by referring to the optical admittance. We also explored a suite of perfect absorbers with varying thicknesses. An angle insensitive performance, which is integral to such a flexible optical device, was experimentally identified. Consequently, the proposed thin-film absorber featured an enhanced Q-factor in conjunction with a wide angle of acceptance. It is anticipated that our absorber can facilitate seminal applications encompassing advanced sensors and absorption filtering devices geared for smart camouflage and stealth.