AbstractTo investigate one‐dimensionally disordered (ODD) structures in close packed (cp) crystals, the Monte Carlo computer simulation technique has been applied. Calculations of diffraction intensity distributions along the 10.L reciprocal lattice row from 4H structure with four different kinds of stacking faults (SFs): growth, deformation, layer displacement and extrinsic fault are presented. In particular, using simple frequency function of fault to fault distances, both random and non‐random distributions of SFs are considered. Distinctive features of the diffraction patterns corresponding to the chosen examples of transformations from the parent 4H structure into another small‐period polytypes are discussed in detail.