Abstract
Inside GaN layers grown over (0001) sapphire by metal-organic chemical vapor deposition, we have analysed the three stacking faults of the structure: the two intrinsic faults I 1 and I 2 (with vectors equal to 1/6 20−23 and 1/3 10−10 , respectively) and the extrinsic fault E ( b=1/2 [0001]). A sequence of the three faults I 1, I 2 and E was observed near the interface with the substrate as well as the switch from one configuration to another.
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