Extrinsic Disorder Research Articles

Transient Localization from the Interaction with Quantum Bosons.

We carefully revisit the electron-boson scattering problem, going beyond weak-coupling expansions and popular semiclassical treatments. By providing numerically exact results valid at finite temperatures, we demonstrate the existence of a broad regime of electron-boson scattering where quantum localization processes become relevant despite the absence of extrinsic disorder. Localization in the Anderson sense is caused by the dynamical randomness resulting from a large thermal boson population, being, however, effective only at transient times before diffusion can set in. Compelling evidence of this transient localization phenomenon is provided by the observation of a distinctive displaced Drude peak in the optical absorption and the ensuing suppression of conductivity. Our findings identify a general route for anomalous metallic behavior that can broadly apply in interacting quantum matter.

Contrasting the nature of plastic fluctuations in small-sized systems of BCC and FCC materials

It is now well established that, upon decreasing system sizes down to a few μ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\upmu$$\\end{document}m or below, the nature of plasticity of metallic materials is changing. Two important features of this small-sizes plasticity are two size effects, which can be summed up as “smaller is stronger” and “smaller is wilder”, this last observation meaning that the jerkiness of plastic deformation becomes prominent at small enough system sizes. In FCC and HCP materials, this is now rather well understood within the framework of obstacle-controlled plasticity, from the key role of a scaling ratio between the system size L and an internal scale l mainly dictated by dislocation patterning in pure materials, or by the nature of extrinsic disorder in alloys. The situation is more complex in BCC materials, for which screw dislocation motion becomes lattice-controlled, i.e. is thermally activated, below a transition temperature Ta\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$T_a$$\\end{document}. Therefore, in small-sized BCC systems, temperature, size and strain-rate effects combine to give rise to a complex landscape. We show, from an analysis of the literature as well as micropillar compression tests on Molybdenum performed with different sample sizes, under different temperatures and different applied strain-rates, that (i) near or above Ta\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$T_a$$\\end{document}, the plasticity of pure BCC metals is athermal and obstacle-controlled, much like at bulk scales, therefore mimicking that of pure FCC metals; (ii) below Ta\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$T_a$$\\end{document} and for sample sizes larger than ∼\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\sim$$\\end{document}1 μ\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\upmu$$\\end{document}m, BCC plasticity becomes lattice-controlled, this damping dislocation avalanches and thus reducing wildness; but (iii) for very small systems, still below Ta\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$T_a$$\\end{document}, the role of screw dislocations on plasticity vanishes, i.e. is no more lattice-controlled, opening again the door for wild plastic fluctuations and jerkiness.

Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene.

Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.

Dimensionality-driven in-plane antiferromagnetism in two-dimensional SrRuO3

Control of dimensionality is a powerful tool to unlock hidden electronic and magnetic phases. In particular, reduced dimensionality in strongly correlated oxides leads to an intriguing ``dead-layer'' behavior that a transition from (ferromagnetic) metal to (antiferromagnetic) insulator occurs as the thickness approaches the two-dimensional limit. However, the origin of such transition has been a subject of debate that both the intrinsic dimensionality effect and the extrinsic disorder effect are proposed to be the driving force. Here, we reveal a transition from ferromagnetic metal with perpendicular magnetic anisotropy to antiferromagnetic insulator with in-plane magnetic anisotropy in ${\mathrm{SrRuO}}_{3}$ epitaxial films down to the monolayer limit. Experimentally, we demonstrate that ${\mathrm{SrRuO}}_{3}$ films below 3 unit cells become magnetic insulators and the spin easy axis changes to the in-plane ⟨110⟩ directions. First-principles calculations reveal that the interplay of the orbital-selective quantum confinement on Ru $4d$ orbitals and the oxygen octahedral rotation drives the ultrathin films from ferromagnetic metal to antiferromagnetic insulator, reorienting Ru spins from the perpendicular to the ⟨110⟩ directions. Our findings demonstrate how reduced dimensionality can tailor the magnetic state and provide significant advances in one of the debated topics in complex oxide heterostructures that dimensionality effect alone can be the driving force of dead-layer phenomenon in two-dimensional systems.

Reversible Tuning of Superconductivity in Ion-Gated NbN Ultrathin Films by Self-Encapsulation with a High- κ Dielectric Layer

Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material beyond pure electrostatics. Conversely, reversible, volatile and electrostatic modulation is pivotal in the reliable design and operation of novel device concepts enabled by the ultrahigh induced charge densities attainable via ionic gating. Here we demonstrate a simple and effective method to achieve reversible and volatile gating of surface-sensitive ultrathin niobium nitride films via controlled oxidation of their surface. The resulting niobium oxide encapsulation layer exhibits a capacitance comparable to that of non-encapsulated ionic transistors, withstands gate voltages beyond the electrochemical stability window of the gate electrolyte, and enables a fully-reversible tunability of both the normal-state resistivity and the superconducting transition temperature of the encapsulated films. Our approach should be transferable to other materials and device geometries where more standard encapsulation techniques are not readily applicable.

The Inherent Coupling of Intrinsically Disordered Regions in the Multidomain Receptor Tyrosine Kinase KIT

RTK KIT regulates a variety of crucial cellular processes via its cytoplasmic domain (CD), which is composed of the tyrosine kinase domain, crowned by the highly flexible domains—the juxtamembrane region, kinase insertion domain, and C-tail, which are key recruitment regions for downstream signalling proteins. To prepare a structural basis for the characterization of the interactions of KIT with its signalling proteins (KIT INTERACTOME), we generated the 3D model of the full-length CD attached to the transmembrane helix. This generic model of KIT in inactive state was studied by molecular dynamics simulation under conditions mimicking the natural environment of KIT. With the accurate atomistic description of the multidomain KIT dynamics, we explained its intrinsic (intra-domain) and extrinsic (inter-domain) disorder and represented the conformational assemble of KIT through free energy landscapes. Strongly coupled movements within each domain and between distant domains of KIT prove the functional interdependence of these regions, described as allosteric regulation, a phenomenon widely observed in many proteins. We suggested that KIT, in its inactive state, encodes all properties of the active protein and its post-transduction events.

Two-dimensional charge order stabilized in clean polytype heterostructures

Compelling evidence suggests distinct correlated electron behavior may exist only in clean 2D materials such as 1T-TaS2. Unfortunately, experiment and theory suggest that extrinsic disorder in free standing 2D layers disrupts correlation-driven quantum behavior. Here we demonstrate a route to realizing fragile 2D quantum states through endotaxial polytype engineering of van der Waals materials. The true isolation of 2D charge density waves (CDWs) between metallic layers stabilizes commensurate long-range order and lifts the coupling between neighboring CDW layers to restore mirror symmetries via interlayer CDW twinning. The twinned-commensurate charge density wave (tC-CDW) reported herein has a single metal–insulator phase transition at ~350 K as measured structurally and electronically. Fast in-situ transmission electron microscopy and scanned nanobeam diffraction map the formation of tC-CDWs. This work introduces endotaxial polytype engineering of van der Waals materials to access latent 2D ground states distinct from conventional 2D fabrication.

From Low-Field Sondheimer Oscillations to High-Field Very Large and Linear Magnetoresistance in a SrTiO3-Based Two-Dimensional Electron Gas.

Quantum materials harbor a cornucopia of exotic transport phenomena challenging our understanding of condensed matter. Among these, a giant, nonsaturating linear magnetoresistance (MR) has been reported in various systems, from Weyl semimetals to topological insulators. Its origin is often ascribed to unusual band structure effects, but it may also be caused by extrinsic sample disorder. Here, we report a very large linear MR in a SrTiO3 two-dimensional electron gas and, by combining transport measurements with electron spectromicroscopy, show that it is caused by nanoscale inhomogeneities that are self-organized during sample growth. Our data also reveal semiclassical Sondheimer oscillations arising from interferences between helicoidal electron trajectories, from which we determine the 2DEG thickness. Our results bring insight into the origin of linear MR in quantum materials, expand the range of functionalities of oxide 2DEGs, and suggest exciting routes to explore the interaction of linear MR with features like Rashba spin-orbit coupling.

The protein disorder cycle

This mini-review represents a brief, disorder-centric consideration of the interplay between order and disorder in proteins. The goal here is to show that inside the cell, folding, non-folding, and misfolding of proteins are interlinked on multiple levels. This is evidenced by the highly heterogeneous spatio-temporal structural organization of a protein molecule, where one can find differently (dis)ordered components that can undergo local or global order-to-disorder and disorder-to-order transitions needed for functionality. This is further illustrated by the fact that at particular moments of their life, most notably during their synthesis and degradation, all proteins are at least partially disordered. In addition to these intrinsic forms of disorder, proteins are constantly facing extrinsic disorder, which is intrinsic disorder in their functional partners. All this comprises the multileveled protein disorder cycle.

Spin dynamics in the Kitaev model with disorder: Quantum Monte Carlo study of dynamical spin structure factor, magnetic susceptibility, and NMR relaxation rate

The Kitaev quantum spin liquid provides an ideal playground for the spin fractionalization to Majorana and vison excitations. The fingerprints manifest themselves in spin dynamics, which are accessible via many experimental techniques. However, extrinsic disorder effects are inevitable in real materials. Here, the authors compute finite-temperature spin dynamics in disordered Kitaev spin liquids and clarify that disorder seriously affects the vison excitations rather than Majorana quasiparticles. Furthermore, the softening of the vison excitations and Majorana zero modes emerge due to disorder, which will help identify Kitaev magnets.

Effect of Extrinsic Disorder on the Magnetoresistance Response of Gated Single-Layer Graphene Devices.

Analogous to the case of classical metal oxide semiconductor field-effect transistors, transport properties of graphene-based devices are determined by scattering from adventitious charged impurities that are invariably present. The presence of charged impurities renders experimental graphene samples "extrinsic" in that their electrical performances also depend on the environment in which graphene operates. While the role of such an extrinsic disorder component has been studied for conventional charge transport in graphene, its impact on the magnetotransport remains unexplored. Here, we show that single-layer graphene transistors with a low density of extrinsic disorder feature a larger magnetoresistance (MR) than those with a high density. Importantly, in gated single-layer devices with a low density of charged impurities, we find that MR peaks at gate voltage values far from the charge neutrality point not only at a low temperature but also at room temperature; in particular, MR approaches 800% at room temperature and 1400% at 50 K in such devices. In addition, dynamic measurements of MR on devices with a low degree of extrinsic disorder lead to stable and reliable single-layer graphene magnetosensors endowed with an ultralow power consumption of 2.5 nW. Our work indicates that the initial value of the minimum conductivity σ0 at room temperature along with carrier mobility must be looked at to select the most promising devices for magnetosensing.

Effect of Dopants on the Lithium Metazirconate Conductivity

Samples from the Li2 – 2xMxZrO3 (M = Ca, Zn), Li2 –xZr1 –xNbxO3, and Li2 +xZr1– xYxO3 systems were synthesized by conventional solid-state reaction. Estimated domains of Li2ZrO3-based solid solutions were established for all above-mentioned systems. The transport properties of the samples (temperature and composition dependences of their conductivity, and the conductivity activation energy) were studied by electrochemical impedance spectroscopy in the temperature range from 300 to 600°С. The most probable lithium-ion migration mechanisms depending on the Li2ZrO3 crystal structure were discussed. According to the obtained results, the synthesized materials are typical solid electrolytes with extrinsic disorder and quite low ionic conductivity (σ ∼ 10–2 –10–5 S cm–1).

Self-induced spin glass state in elemental and crystalline neodymium.

Spin glasses are a highly complex magnetic state of matter intricately linked to spin frustration and structural disorder. They exhibit no long-range order and exude aging phenomena, distinguishing them from quantum spin liquids. We report a previously unknown type of spin glass state, the spin-Q glass, observable in bulk-like crystalline metallic neodymium thick films. Using spin-polarized scanning tunneling microscopy combined with ab initio calculations and atomistic spin-dynamics simulations, we visualized the variations in atomic-scale noncolinear order and its response to magnetic field and temperature. We quantified the aging phenomena relating the glassiness to crystalline symmetry and the energy landscape. This result not only resolves the long-standing debate of the magnetism of neodymium, but also suggests that glassiness may arise in other magnetic solids lacking extrinsic disorder.

Modeling of Electronic Mobilities in Halide Perovskites: Adiabatic Quantum Localization Scenario.

The transport properties of MAPbI3 are analyzed within a tight-binding model. We find a strong Fröhlich interaction of electron and holes with the electrostatic potential induced by the longitudinal optical phonon modes. This potential induces a strong scattering and limits the electronic mobilities at room temperature to about 200 cm^{2}/V s. With additional extrinsic disorder, a large fraction of the electrons and holes are localized, but they can diffuse by following nearly adiabatically the evolution of the electrostatic potential. This process of diffusion, at a rate which is given by the lattice dynamics, contributes to the unique electronic properties of this material.

Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation

We study the influence of random point disorder on the vortex dynamics and critical current densities Jc of CaKFe4As4 single crystals by performing magnetization measurements. Different samples were irradiated with a proton (p) beam at constant energy of 3 MeV to fluencies from 2 × 1015 p cm−2 to 4 × 1016 p cm−2. The results show the addition of extrinsic random point disorder enhances the Jc values at low and intermediate temperatures over the entire range of magnetic fields applied. The optimum pinning enhancement is achieved with a proton fluence of 3 × 1016 p cm−2, increasing Jc at 5 K by factors ≈5 and 14 at self-field and μ0H = 3 T, respectively. We analyze the vortex dynamics using the collective creep theory. The enhancement in Jc matches with a systematic reduction in the flux creep relaxation rates as a consequence of a gradual increase in the collective pinning energy U0. The substantial increment in Jc produced by random point disorder, reaching values of 9 MA cm−2 at 5 K and self-field, makes CaKFe4As4 a promising material for applications based on current carrying capacity at high magnetic fields.

Competition between pinning produced by extrinsic random point disorder and superconducting thermal fluctuations in oxygen-deficient GdBa2Cu3Ox coated conductors

We report on the influence of random point defects introduced by 3 MeV proton irradiation on the vortex dynamics of 1.3 μm thick GdBa2Cu3Ox coated conductors. Thin films with different oxygen stoichiometry (6.7 < × < 7) were irradiated with 3 MeV proton (p) using a fluence of 2 × 1016 p cm−2. We find a direct correlation between the changes in Tc produced by oxygen content and damage by irradiation on the resulting vortex dynamics in the films. The analysis of the critical current densities Jc at low temperatures indicates that although irradiation produces smooth magnetic field dependences, the self-field values decrease systematically as Tc reduces. Moreover, the analysis of the relaxation of the persistent currents shows that the characteristic glassy exponent μ systematically decreases from 1.7 to 0.66 as Tc decreases from 93 to 55 K.

Two-dimensional hole transport in ion-gated diamond surfaces: A brief review (Review article)

Electrically-conducting diamond is a promising candidate for next-generation electronic, thermal and electrochemical applications. One of the major obstacles towards its exploitation is the strong degradation that some of its key physical properties—such as the carrier mobility and the superconducting transition temperature—undergo upon the introduction of disorder. This makes the two-dimensional hole gas induced at its surface by electric field-effect doping particularly interesting from both a fundamental and an applied perspective, since it strongly reduces the amount of extrinsic disorder with respect to the standard boron substitution. In this short review, we summarize the main results achieved so far in controlling the electric transport properties of different field-effect doped diamond surfaces via the ionic gating technique. We analyze how ionic gating can tune their conductivity, carrier density and mobility, and drive the different surfaces across the insulator-to-metal transition. We review their strongly orientation-dependent magnetotransport properties, with a particular focus on the gate-tunable spin-orbit coupling shown by the (100) surface. Finally, we discuss the possibility of field-induced superconductivity in the (110) and (111) surfaces as predicted by density functional theory calculations.

Transport dynamics of complex fluids

Thermal motion in complex fluids is a complicated stochastic process but ubiquitously exhibits initial ballistic, intermediate subdiffusive, and long-time diffusive motion, unless interrupted. Despite its relevance to numerous dynamical processes of interest in modern science, a unified, quantitative understanding of thermal motion in complex fluids remains a challenging problem. Here, we present a transport equation and its solutions, which yield a unified quantitative explanation of the mean-square displacement (MSD), the non-Gaussian parameter (NGP), and the displacement distribution of complex fluids. In our approach, the environment-coupled diffusion kernel and its time correlation function (TCF) are the essential quantities that determine transport dynamics and characterize mobility fluctuation of complex fluids; their time profiles are directly extractable from a model-free analysis of the MSD and NGP or, with greater computational expense, from the two-point and four-point velocity autocorrelation functions. We construct a general, explicit model of the diffusion kernel, comprising one unbound-mode and multiple bound-mode components, which provides an excellent approximate description of transport dynamics of various complex fluidic systems such as supercooled water, colloidal beads diffusing on lipid tubes, and dense hard disk fluid. We also introduce the concepts of intrinsic disorder and extrinsic disorder that have distinct effects on transport dynamics and different dependencies on temperature and density. This work presents an unexplored direction for quantitative understanding of transport and transport-coupled processes in complex disordered media.

Disorder in van der Waals heterostructures of 2D materials.

Realizing the full potential of any materials system requires understanding and controlling disorder, which can obscure intrinsic properties and hinder device performance. Here we examine both intrinsic and extrinsic disorder in two-dimensional (2D) materials, in particular graphene and transition metal dichalcogenides (TMDs). Minimizing disorder is crucial for realizing desired properties in 2D materials and improving device performance and repeatability for practical applications. We discuss the progress in disorder control for graphene and TMDs, as well as in van der Waals heterostructures realized by combining these materials with hexagonal boron nitride. Furthermore, we showcase how atomic defects or disorder can also be harnessed to provide useful electronic, optical, chemical and magnetic functions.

Temporal complexity in emission from Anderson localized lasers

Anderson localization lasers exploit resonant cavities formed due to structural disorder. The inherent randomness in the structure of these cavities realizes a probability distribution in all cavity parameters such as quality factors, mode volumes, mode structures etc, implying resultant statistical fluctuations in the temporal behavior. Here, we provide the first, direct experimental measurements of temporal width distributions of Anderson localization lasing pulses in intrinsically and extrinsically disordered coupled-microresonator arrays. We first illustrate signature exponential decays in the spatial intensity distributions of the lasing modes that quantify their localized character, and then measure the temporal width distributions of the pulsed emission over several configurations. We observe a hitherto-unreported dependence of temporal widths on the disorder strength, wherein the widths show a single-peaked, left-skewed distribution in extrinsic disorder and a dual-peaked distribution in intrinsic disorder. We propose a model based on coupled rate equations for an emitter and an Anderson cavity with a random mode structure, which gives excellent quantitative and qualitative agreement with the experimental observations. The experimental and theoretical analyses bring to the fore the temporal complexity in Anderson localization based lasing systems.