Exfoliation Of Black Phosphorus Research Articles

Exfoliation of black phosphorus in ionic liquids

We report the characterization and formation of sonication-assisted liquid phase exfoliation of bulk black phosphorus (BP) crystals with the incorporation of two representative ionic liquids (ILs) ([Emim][Tf2N] and [Bmim][Tf2N]) as green dispersing media was attempted, which resulted in stable dispersion of multi-layer BP flakes with unsuspected high oxidation resistance and chemical/structural integrity due to the presence of IL layer on top of BP flakes. There are two unveiled issues for the generation of BP dispersion in ILs. First, thin films of BP flakes can be simply prepared through our approach. Because self-oxidation of BP in ambient condition can be significantly minimized in ILs, vacuum filtration step can be adopted to produce BP thin films in ambient condition. Second, the binding of IL molecules on BP flakes has been firstly demonstrated by the time-of-flight secondary ion mass spectrometry characterization. In addition to the exploitation of ILs as the green solvents with less environmental harmfulness, IL-based exfoliation of BP might be easily scalable because harsh control of atmospheric oxygen and moisture is unnecessary in this approach.

Fundamental Limits on the Subthreshold Slope in Schottky Source/Drain Black Phosphorus Field-Effect Transistors.

The effect of thickness, temperature, and source-drain bias voltage, V(DS), on the subthreshold slope, SS, and off-state properties of black phosphorus (BP) field-effect transistors is reported. Locally back-gated p-MOSFETs with thin HfO2 gate dielectrics were analyzed using exfoliated BP layers ranging in thickness from ∼4 to 14 nm. SS was found to degrade with increasing V(DS) and to a greater extent in thicker flakes. In one of the thinnest devices, SS values as low as 126 mV/decade were achieved at V(DS) = -0.1 V, and the devices displayed record performance at V(DS) = -1.0 V with SS = 161 mV/decade and on-to-off current ratio of 2.84 × 10(3) within a 1 V gate bias window. A one-dimensional transport model has been utilized to extract the band gap, interface state density, and the work function of the metal contacts. The model shows that SS degradation in BP MOSFETs occurs due to the ambipolar turn on of the carriers injected at the drain before the onset of purely thermionic-limited transport at the source. The model is further utilized to provide design guidelines for achieving ideal SS and meet off-state leakage targets, and it is found that band edge work functions and thin flakes are required for ideal operation at high V(DS). This work represents a comprehensive analysis of the fundamental performance limitations of Schottky-contacted BP MOSFETs under realistic operating conditions.