Advanced Memory Research Articles

Early Energy Consumption Prediction as a Key Element in Smart City Sustainability

In the era of smart cities, the pursuit of sustainability stands as a paramount goal, with energy management playing a central role. This paper is dedicated to the exploration of early energy consumption prediction as a linchpin in the realization of sustainable smart cities. Employing advanced long short-term memory (LSTM) networks, we introduce a potent predictive model tailored to anticipate energy consumption patterns within urban environments. Notably, our model achieves remarkable performance metrics, with a root mean square error of 547.71 and a strikingly low mean absolute percentage error (MAPE) of 1.22. Through meticulous comparisons against baseline models, our LSTM-based approach emerges as a beacon of accuracy, reliability, and sustainability. Beyond predictive analytics, our research offers actionable insights for urban planners and policymakers, fostering the creation of greener, more sustainable, and ecologically responsible smart cities that harmonize technological innovation with environmental stewardship. As smart cities continue to evolve, our work lays the foundation for a future where sustainability is not merely a goal but a reality.

Effects of iron oxide and carbon nanotube contents on mechanical properties and shape memory behavior of biocompatible and biodegradable shape memory polymers

AbstractThe shape memory polymers (SMPs) is a potential alternative material for conventional shape memory alloys (SMAs) in various fields. Previous studies have focused on the application of SMPs materials as an alternative to SMAs. However, considering problems such as the poor mechanical properties, its application has been limited. This study developed a biodegradable, magnetically responsive SMPs material that can be used for medical implants with shape memory behavior under magnetic force and improved mechanical properties by adding nanoparticles. Moreover, effect of the added nanoparticle was investigated due to contents ratio. Nanocomposite was synthesized with polycaprolactone which has shape memory properties, Fe3O4 that generates heat under magnetic field, and carbon nanotubes with reinforcing effect. The morphology analysis confirmed the homogeneous dispersion of the Fe3O4/Carbon‐nanotubes (CNTs) in polymer matrix. The tensile test shows that tensile strength (14.9–17.6 MPa) increased when Fe3O4 (0–20 wt%) was included and that it did not increase significantly when CNTs (0–0.8 wt%) were included. The shape memory test result confirmed that developed composite had a shape memory under a magnetic field. It was confirmed that even if Fe3O4 was incorporated into polycaprolactone, did not lose its exothermic properties under magnetic field. The developed polymer showed high shape memory ratio (91%–98%) in all the nanoparticle content rates. With regard to biodegradability, weight loss occurred over time in the phosphate‐buffered saline solution. Therefore, the biocompatible, biodegradable, magnetic response shape memory polymer developed in this study might applied to various medical implant as advanced shape memory materials.

Structure, bonding and electronic characteristics of amorphous Se.

Ovonic threshold switching (OTS) selectors can effectively improve the storage density and suppress the leakage current of advanced phase-change memory devices. As a prototypical OTS material, amorphous GeSe is widely investigated. But the attention paid to amorphous Se (i.e., the functional constituent in amorphous GeSe) has been very limited up to now. Here we have explored the structure, bonding and electronic characteristics of amorphous Se using ab initio molecular dynamics simulations. The results reveal that the Se atoms in amorphous Se tend to form 2-coordinated configurations, and they connect with each other to form long chains. The fraction of the vibrational density of state located in the high frequency range is relatively large, and the formation energy of the Se-Se bond is as large as 4.44 eV, hinting that the Se-Se bonds in chains possess high stability. In addition, the mid-gap state related to the OTS behavior is also found in amorphous Se despite the small proportion. Our findings enrich the knowledge of amorphous Se, which aids the applications of Se-based OTS selectors.

Next-Generation SRAM: Design and Optimization with Carbon Nanotubes

Static Random Access Memory (SRAM) serves as a critical component in modern electronic devices, offering high-speed access to stored data. As technologycontinues to advance, there's a growing demand for smaller, faster, and more energy-efficient memory solutions. Carbon nanotubes (CNTs) have emerged as apromising material for pushing the boundaries of conventional silicon-based SRAM designs. This paper presents a comprehensive exploration of the design andoptimization of next- generation SRAM utilizing carbon nanotubes. The unique properties of CNTs, suchas their exceptional electrical conductivity, mechanical strength, and nanoscale dimensions, offer a fertile ground for revolutionizing SRAM architecture. The study delves into the integration of CNTs intoSRAM cell structures, discussing variousconfigurations and layouts to harness the advantageous characteristics of carbon nanotubes. Emphasis is placed on addressing the challenges associated with CNT-based SRAM, including manufacturing scalability, reliability, and variability. In conclusion, the integration of carbon nanotubesin SRAM design offers a compelling avenue to overcome the limitations of traditional silicon-based memory technologies. This study not only highlights the promising prospects of CNTs in SRAM but also provides insights into the challenges and opportunitiesin harnessing these nanomaterials for advanced memory applications. Keywords : Static Random Access Memory (SRAM), Carbon Nanotubes (CNTs), Nanotechnology, Memory Design, Optimization, Electronic Devices, Nanomaterial Integration.

New Materials for Memory Applications by Atomic Layer Deposition

The architectures of integrated logic and memory devices have shifted from 2D to 3D layouts, enabling a continued scaling of device densities. Atomic layer deposition (ALD) allows the conformal deposition of thin films with sub-nm thickness control on high aspect ratio 3D structures. ALD has become the technique of choice for the synthesis of an increasing number of materials in advanced logic and memory devices. In the first part of this presentation, we briefly review some of the key ALD processes which enable the fabrication of state-of-the-art 3D-NAND and 2D-DRAM. Next, we present the ALD of emerging ferroelectric HfZrO developed at ASM in industrial scale ALD reactors. HfO2 has been established as the preferred gate oxide material for logic devices for almost two decades. The recent discovery of ferroelectricity in HfO2 has opened new applications for HfO2-based materials as active memory elements in DRAM and 3D-NAND. We show that ALD La:HfZrO can achieve high polarization field (2Pr > 60 uC/cm2) and high endurance (> 107 cycle) by applying interface engineering schemes and optimizing deposition processes and film composition (i.e. Hf/Zr ratio, dopant concentration).

Investigating the Metal-Plasma Interaction during the Patterning of MgZnO Alloys, Used for Compute and Memory Applications

Magnesium Zinc Oxide (MgZnO) is a novel metal alloy being considered for advanced memory applications. When used as a dielectricum in transistors in dynamic random-access memory (DRAM) [1,2] or core elements in resistive random-access memory (RRAM) [3,4], MgZnO exhibits the potential to display low cutoff current [Ioff], high mobility [3], and low processing temperature [1]. Therefore, minimal damage-inducing patterning of the alloy for use in electrical nanoscale devices is needed.During the etching process, MgZnO film may be chemically and physically damaged, impacting its electrical performance. Changes in chemical composition and diffusion of etchants into the material are some types of chemical damages observed during etching. These can impact carrier mobility within the material. Physical damage consists of modified roughness, profile distortion, and redeposition on the pattern sidewalls. These are all critical issues because carrier transport in transistor channels is significantly affected by interface roughness between the channel and gate insulator [5]. The etch process developed should preserve the chemical composition and roughness in MgZnO and provide good selectivity when patterning other layers of the stack and hard mask (HM). There are three methods for dry etching consisting of physical, chemical, and physical-chemical mechanisms [6]. Pure physical etching is not selective and pure chemical etching can be isotropic. Reactive ion etching (RIE) is used in this study to generate an etching mechanism that can provide an optimal combination of chemical and physical etching [6].In this work, we carried out the etch investigation of MgZnO film using an RIE-transformer coupled plasma (TCP) system. 10 nm MgZnO films are deposited on a 50 nm SiO2 layer/Si substrate. The impact of different gas mixing ratios, RF power, DC substrate bias, and process pressure are studied. The etching of MgZnO thin films is carried out using Cl2/CH4/Ar mixture. Cl2 increases chemical reactivity by creating MgCl2 [7] and ZnCl2 [8] by-products that are easier to remove than breaking Mg-O and Zn-O bonds from the films. Moreover, the addition of CH4 produces organometallic volatile etch by-product – Zn (CH3)2 (boiling point: 46°C) [8]. Therefore, MgZnO is to be etched partly by physical and chemical mechanisms. These hypotheses are studied in detail by carrying out in-depth X-ray photoelectron spectroscopy (XPS) based composition analysis on individual ZnO and MgO surfaces subjected to the aforementioned chemistry (Fig.1(a, b)). In addition, by increasing the voltage and power, the etching performance of MgZnO is further improved due to increasing ion energy and the presence of more active species in the plasma via higher dissociation and ionization, respectively (Fig.1(c, d)). These investigations should enable a more systematic patterning study of MgZnO-based features at different scaled dimensions and densities.

Physiological and behavioral characteristics of SuperAgers from everyday activities: An NIH U19 SuperAging Research Initiative study protocol

AbstractBackgroundStudying factors contributing to exceptional memory performances beyond the 8th decade, can be a valuable model for understanding dementia risk, prevention, and underlying mechanisms. Age‐associated changes in biological and physiological complexity, or system responsivity, form the foundation of the loss of complexity hypothesis in aging (Lipsitz & Goldberger, JAMA, 1992). Project 1 under the multisite NIH U19 SuperAging Research Initiative uses state‐of‐the‐art wearable technology, and data from real‐world contexts, to test the supposition that SuperAgers have preserved physiologic and behavioral complexity relative to their Controls in the domains of physical activity, autonomic responsiveness, sleep, and social engagement.MethodSuperAgers are enrolling from five U.S. and Canadian sites of the SuperAging Research Initiative. SuperAgers refer to individuals aged 80 and older who have memory capacity considered average for those 2‐3 decades younger. In a fully remote data collection protocol, participants wear a multi‐sensor array comprised of 1 skin‐mounted trunk sensor (with ECG) and 2 wearable limb sensors, continuously over a 14‐day period with scheduled rest breaks every 3‐4 days. Participants complete a baseline orientation visit, and three brief check‐in visits with the study team over video conference. Using custom algorithms, developed by our research team, we will examine time‐varying changes in indices of physiologic and behavioral complexity, across multiple body systems, using both volume‐based and established multi‐scale entropy approaches to quantify differences between SuperAgers and their typically aging Controls. We plan to analyze sensor derived complexity metrics in relation to self‐reports of life‐space mobility.ResultWe will overview our remote data collection protocol and semi‐automated analytics pipeline. Barriers and facilitators to remote data collection will be discussed Preliminary data (N = ∼ 40) will be presented, with select case study examples. We will provide preliminary sensor adherence and user‐feedback from the cohort, comprised of a diverse sample of SuperAgers and Controls.ConclusionThis is the first study to test the loss of complexity hypothesis across multiple physiological and behavioral domains simultaneously and in exceptional cognitive aging. Using sensitive tools to capture dynamic and complex behaviors, we will characterize SuperAgers in a way not afforded by point‐in‐time assessments that dominate the current literature.

Advances in Graphene‐Reinforced Polyurethane Nanocomposites: An Advanced Shape Memory Material

AbstractThe expansion of nanofiller‐based polymers has been rapidly increasing in contemporary society due to their wide range of applications owing to their diverse physicochemical characteristics. This review focuses on a polymer nanocomposite in which graphene is incorporated as a nanofiller and polyurethane is used as a polymer. As polyurethane is well known for its shape memory behaviour and the reinforcement of graphene‐based nanomaterial sparks the physicochemical properties of the fabricated nanocomposites which makes it more adaptable and useful for a wide array of applications. The review provides insights into the recent synthesis approaches to the fabrication of graphene‐based polyurethane nanocomposites. Further, efforts were also made to cover the recent studies done on the use of these nanocomposites as an advanced shape memory material. Rather than merely serving as descriptive content, this article is intended to serve as a comprehensive guide for researchers seeking to harness the potential of graphene‐based nanomaterial reinforcement in polyurethane for high‐performance applications. By providing a detailed overview of the latest research in this domain, the review aims to propel the development of novel and sophisticated materials, unlocking new horizons in smart shape memory technologies.

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics.

Precise control of the conductivity of layered ferroelectric semiconductors is required to make these materials suitable for advanced transistor, memory and logic circuits. Although proof-of-principle devices based on layered ferroelectrics have been demonstrated, it remains unclear how the polarization inversion induces conductivity changes. Therefore, function design and performance optimization remain cumbersome. Here we combine ab initio calculations with transport experiments to unveil the mechanism underlying the polarization-dependent conductivity in ferroelectric channel field-effect transistors. We find that the built-in electric field gives rise to an asymmetric conducting route formed by the hidden Stark effect and competes with the potential redistribution caused by the external field of the gate. Furthermore, leveraging our mechanistic findings, we control the conductivity threshold in α-In2Se3 ferroelectric channel field-effect transistors. We demonstrate logic-in-memory functionality through the implementation of electrically self-switchable primary (AND, OR) and composite (XOR, NOR, NAND) logic gates. Our work provides mechanistic insights into conductivity modulation in a broad class of layered ferroelectrics, providing foundations for their application in logic and memory electronics.

Magnetic behavior of a ferrimagnetic MXene-like lattice: Monte Carlo study

In this study, we performed extensive Monte Carlo simulations to comprehensively analyze the magnetic properties of a single-layer MXene-like lattice. Our investigation involved the exploration of transition temperatures and the behavior of hysteresis cycles, all influenced by a series of key physical parameters. Additionally, we carefully mapped the magnetization as a function of temperature and crystal field, introducing variations in the exchange coupling to unveil their impact on the transition temperature. Furthermore, we investigated the behavior of hysteresis loops, complexly dissecting their responses to changes in exchange coupling, temperature, and crystal field. Significantly, our results highlight the central role of the crystal field in the formation of magnetization plateaus, thus providing promising avenues for applications in nanotechnology and advanced memory storage systems.

Ultrafast SET/RESET operation for optoelectronic hybrid phase-change memory device cells based on Ge2Sb2Te5 material using partial crystallization strategy

Combination of nonvolatile storage and in-memory computing promises to break through the “memory bottleneck” that computing device adopts von Neumann architecture with individual computing and memory unit. Thus, the advanced nonvolatile memory device with ultrafast operation speed is urgently required. Here, the optoelectronic hybrid phase-change memory based on the Ge2Sb2Te5 material is proposed, where the picosecond laser induced reversible phase-change is utilized to write and erase the information while the resistance difference is adopted to realize the accurate information readout. Due to the significant difference in resistance between crystalline and amorphous states, a partial crystallization strategy can be adopted to achieve ultrafast SET operation. Results indicate that SET operation speed of the Ge2Sb2Te5 film and device unit can be as fast as 52 and 130 ps, respectively, while the RESET speed reaches 13 ps. In parallel, the resistance ratio of RESET to SET state is still as high as two orders of magnitude. By using partial crystallization strategy, the phase-change induced by picosecond laser only occurs from amorphous to face-centered-cubic crystalline state with low crystallinity and the defective octahedral motif is observed in the Ge2Sb2Te5 film, which is beneficial to achieve the ultrafast operation speed. At the same time, the ordered clusters existed in the as-deposited and picosecond laser induced RESET films can accelerate the nucleation process of the Ge2Sb2Te5 film, which is one of the important reasons for achieving ultrafast SET speed. The optoelectronic hybrid phase-change memory with ultrafast operation speed may be one of the promising solutions for the in-memory computing.

Preparing Malaysia for Population Aging through the Advanced Memory and Cognitive Service in Hospital Universiti Sains Malaysia

Improving healthcare and living conditions has led to an increase in life expectancies and challenges of population aging in Malaysia. The Advanced Memory and Cognitive Service builds on integrated healthcare among multidisciplinary specialists to provide holistic and patient-centred healthcare. The service treats older adults experiencing neurocognitive impairment as well as young individuals with complex neurocognitive disorders and thoroughly screens asymptomatic individuals at high risk of developing neurocognitive disorders. This early intervention strategy is a preventive effort in the hope of reducing disease burden and improving quality of life to prepare Malaysia for the forthcoming population aging.

Reversible Amorphous-Crystalline Phase Transformation in an Ultrathin van der Waals FeTe System.

Searching for new phase-change materials for memory and neuromorphic device applications and further understanding the phase transformation mechanism are attracting wide attention. Phase transformation from the amorphous phase to the crystal phase has been unraveled in iron telluride (FeTe) bulk film deposited by pulsed laser deposition, recently. However, the van der Waals-layered feature of FeTe in the crystal form was not noted, which will benefit the scaling of the memory devices and shine light on phase-change heterostructures or interfacial phase-change materials. Moreover, the demonstration of advanced memory or neuromorphic device applications is lacking. Here, we investigate the phase transformation of FeTe starting from mechanically exfoliated van der Waals layers from a bulk single crystal. Surficial amorphization is revealed at the surface layers of FeTe flakes after exfoliation under ambient conditions, which could be transformed back to the crystalline phase with laser irradiation or heating. The conductance drop of the flake devices near 400 K verifies the phase transformation electrically. Memristor behavior of the amorphous surface in FeTe has been further demonstrated, proving the reversibility of the phase transformation and shining light on the possible applications of neuromorphic devices.

Thermal atomic layer deposition of ternary Ge-S-Se alloy for advanced ovonic threshold switch selectors in three-dimensional cross-point memory array

Two-terminal ovonic threshold switch (OTS) selectors based on chalcogenide alloys have attracted significant attention as alternatives to conventional silicon-based transistors. These selectors offer outstanding features that enable the mass production of three-dimensional cross-point arrays for advanced memory technologies. In this study, we developed a thermal atomic layer deposition (ALD) process for ternary Ge-S-Se alloys. By utilizing ALD super-cycles of Ge-Se and Ge-S, a broad range of film compositions can be achieved. We investigated the electrical characteristics and film properties of the deposited films, with a focus on their smooth surfaces and excellent conformality, which are indispensable characteristics for future vertical cross-point structures. By incorporating S into the Ge-Se film via an ALD super-cycle, we achieved a significant reduction in off-current of Ge0.50S0.15Se0.35 to approximately 35 nA. Additionally, the thermal stability of Ge0.50S0.15Se0.35 film is enhanced up to 420 ℃ due to the higher bandgap and shorter bonding length of S, exhibiting a cyclic endurance of more than 5 × 107. This research not only provides insight into the control of the film composition to improve and modify device characteristics but also constructs a foundation of ALD-based OTS research on ternary Ge-S-Se for a future X-point memory application.

Device-scale atomistic modelling of phase-change memory materials

Computer simulations can play a central role in the understanding of phase-change materials and the development of advanced memory technologies. However, direct quantum-mechanical simulations are limited to simplified models containing a few hundred or thousand atoms. Here we report a machine-learning-based potential model that is trained using quantum-mechanical data and can be used to simulate a range of germanium–antimony–tellurium compositions—typical phase-change materials—under realistic device conditions. The speed of our model enables atomistic simulations of multiple thermal cycles and delicate operations for neuro-inspired computing, specifically cumulative SET and iterative RESET. A device-scale (40 × 20 × 20 nm3) model containing over half a million atoms shows that our machine-learning approach can directly describe technologically relevant processes in memory devices based on phase-change materials.

Executive Functions in a Population of Individuals with CHARGE Syndrome: Findings from Performance-Based and Rating Scale Measures According to a 3-Factor Model

ABSTRACT Purpose To identify possible predictors of executive functions of individuals with CHARGE syndrome, as these will be important targets for interventions. Methods A population-based cross-sectional study investigating the executive functions of a representative sample of 35 Norwegians with CHARGE syndrome divided into two subgroups to handle their inherent heterogeneity. Both performance-based measures and rating scale findings were included and organized according to the 3-factor model of Miyake and colleagues. Results Both measures showed comprehensive executive dysfunctions within the population, which were largely unrelated to deafblindness. Working memory stood out as a strength within the executive domain and the only factor presenting results within the normal range. Verbal working memory was a particular cognitive resource for participants with deafblindness, and, unlike those without deafblindness, unrelated to sensorimotor functions. Conclusions Individuals with CHARGE syndrome appear to be at risk for underdeveloped executive functions due to neurogenetic and environmental factors. Performance-based measures and ratings from caregivers gave unique and complementary knowledge and implied the need of both when investigating executive functioning in CHARGE syndrome. Participants with deafblindness presented strong verbal working memory despite their auditory impairments, indicating effective compensatory mechanisms The results also indicated an untapped cognitive potential in both subgroups. Because of their relatively advanced working memory significantly correlating with global cognition, the environment should assume equal learning potential of individuals with CHARGE syndrome regardless of their degree of sensory impairments.

Pharmacological inhibition of plasminogen activator inhibitor-1 prevents memory deficits and reduces neuropathology in APP/PS1 mice.

Extracellular proteolytic activity plays an important role in memory formation and the preservation of cognitive function. Previous studies have shown increased levels of plasminogen activator inhibitor-1 (PAI-1) in the brain of mouse models of Alzheimer's disease (AD) and plasma of AD patients, associated with memory and cognitive decline; however, the exact function of PAI-1 in AD onset and progression is largely unclear. In this study, we evaluated a novel PAI-1 inhibitor, TM5A15, on its ability to prevent or reverse memory deficits and decrease Aβ levels and plaque deposition in APP/PS1 mice. We administered TM5A15 mixed in a chow diet to 3-month and 9-month-old APP/PS1 mice before and after neuropathological changes were distinguishable. We then evaluated the effects of TM5A15 on memory function and neuropathology at 9 months and 18 months of age. In the younger mice, 6 months of TM5A15 treatment protected against recognition and short-term working memory impairment. TM5A15 also decreased oligomer levels and amyloid plaques, and increased mBDNF expression in APP/PS1 mice at 9 months of age. In aged mice, 9 months of TM5A15 treatment did not significantly improve memory function nor decrease amyloid plaques. However, TM5A15 treatment showed a trend in decreasing oligomer levels in APP/PS1 mice at 18 months of age. Our results suggest that PAI-1 inhibition could improve memory function and reduce the accumulation of amyloid levels in APP/PS1 mice. Such effects are more prominent when TM5A15 is administered before advanced AD pathology and memory deficits occur.

A novel brain-inspired hierarchical perception-association circuit based on memristor arrays

In the brain, primary sensory cells can efficiently perceive multimodal stimuli, and then associative memory cells perform an advanced bidirectional associative memory function with perceived information. Here, a brain-inspired hierarchical perception-association circuit based on memristor arrays is proposed. Firstly, a memristive reservoir computing circuit is designed to simulate a low-level perceptual function, which mainly comprises dynamic analog reservoirs, memristor arrays, and analog integrators, enabling efficient spatio-temporal information processing. Secondly, a spiking bidirectional associative memory memristive circuit, as the core of the whole circuit, is proposed to mimic a high-level associative function, which mainly consists of memristor arrays, current amplifiers, and leaky integrate-and-fire neuron circuits, implementing multimodal associative learning. The simulation results in LTspice show that the modified neuron circuit exhibits 66× improvement in energy efficiency, and the proposed circuit can precisely perform the letter association and vision–audio association tasks in a spiking fashion with an average firing energy consumption of 230 pJ/spike, which has a great potential to be embedded in mobile robotic platforms.

Robust Switchable Polarization and Coupled Electronic Characteristics of Magnesium-Doped Zinc Oxide.

Ferroelectrics possess a spontaneous polarization that is switchable by an electric field and is critical for the development of low-energy nanoelectronics and neuromorphic applications. However, apart from a few recent developments, the realization of switchable polarization in metal oxides with simpler structures has been a major challenge. Here, we demonstrate the presence of robust switchable polarization at the level of a single nanocrystallite in magnesium-doped zinc oxide thin films with polar wurtzite crystal structures. Using a combination of high-resolution scanning probe microscopy and spectroscopic techniques, voltage control of the polarization and the coupled electronic transport behavior revealing a giant resistance change of approximately 10000% is unveiled. Time- and frequency-resolved nanoscale measurements provide key insights into the polarization phenomenon and a 9-fold increase in the effective longitudinal piezoelectric coefficient. Our work thus constitutes a crucial step toward validating nanoscale ferroelectricity in polar wurtzites for use in advanced nanoelectronics and memory applications.

Preliminary study on the E-liquid and aerosol on the neurobehavior of C. elegans

E-cigarettes, also known as electronic nicotine delivery systems (ENDS), are mainly used among adolescents and young adults. Similar to traditional cigarettes, different concentrations of nicotine are also added to E-cigarette's liquid (E-liquid), but due to the supplementation of chemicals such as propylene glycol (PG), vegetable glycerin (VG) and flavors, it is difficult to determine the risk after using E-cigarettes. And given to the specificity of the aerosol particle composition and atomization process of E-cigarettes, it is necessary to assess the neurotoxic effects of long-term E-cigarettes use. In this study, two commercial nicotine-containing (5%) and nicotine-free E-liquids were diluted to investigate the neurobehavioral changes and addictive tendencies of developing C. elegans after sub-chronic exposure to E-liquid. The results showed that sub-chronic exposure of E-liquid could lead to impaired growth and development of nematodes, abnormal general neuromotor behavior and advanced learning and memory behavior, and nicotine-containing E-liquid could also lead to increased addiction tendency of nematodes. Although the damage effect of nicotine free E-liquid is smaller than that of the nicotine-containing group, its toxic effect cannot be ignored. Further analysis of the neurotoxicity mechanism found that redox imbalance-mediated mitochondrial stress and aging may be important causes of E-liquid-induced biological damage. The biosafety of e-cigarette aerosols was also included in the assessment. The study found that the heated atomization process did not alter the E-liquid components, and E-cigarette aerosols still have the effect of interfering with the growth and development of nematodes and neurobehavior, and its addictive nature is also of concern. This study can provide new ideas for future studies on the neurotoxic effects and safety assessment of the E-cigarettes, and provide theoretical reference for the study on the injury mechanism of E-cigarettes.