Excellent Dynamic Stability Research Articles

Electronic and photochemical properties of hybrid binary silicon and germanium derived Janus monolayers.

The electronic structures and optical properties of a novel class of hybrid binary Janus materials derived from IV-V groups were investigated using first principles calculations. The computational results demonstrated that, except for Ge2NAs, all the other five structures of M2XY monolayers (M = Si, Ge; X, Y = N, P, As; X ≠ Y) have excellent thermal and dynamical stabilities. Janus Si2NP, Si2NAs, Si2PAs and Ge2NP are semiconductors with direct band gaps spanning the range between 0.82 and 2.49 eV. Notably, the hybrid M2XY materials exhibit highly efficient absorption within the visible light region, which are greatly higher than their pristine MX structures. Janus Si2PAs and Ge2PAs possess appropriate band edge alignments that straddle the water redox potentials in the pH range from 0 to 14, making them promising photocatalysts for water splitting under visible light. Our calculations further demonstrate that the catalytic selectivity for the water splitting reaction could be achieved through the hybrid Janus M2XY, where, for instance, Ge2NP appears to facilitate only the oxidation, but not the reduction of water under certain conditions. This outcome provides a new route for the design of novel photocatalysts with improved efficiency and selectivity.

Strain effect on the mechanical and electronic properties of graphene-like B4P4C4 and B2P2C8: First-principles calculation

In this work, we predict two novel ternary graphene-like structures, B 4 P 4 C 4 and B 2 P 2 C 8 monolayer. Their structural, mechanical and electronic properties are systematically investigated based on first-principles methods. The results show that the intrinsic and the strained materials possess excellent dynamic, thermal and mechanical stability, which provide the possibility for experimental preparation. Calculation results show that the intrinsic B 4 P 4 C 4 monolayer has the Dirac feature. Particularly, the intrinsic B 2 P 2 C 8 monolayer exhibits unique double Dirac points and non-trivial topological property. It is found that the Dirac states in B 4 P 4 C 4 monolayer can be effectively regulated by applying horizontal strain, exhibiting the characteristics of a semiconductor with a direct or indirect band gap even an intriguing semiconductor-metal transition. In contrast, the intrinsic B 2 P 2 C 8 monolayer is not sensitive to biaxial strain and its stability and semi-metal state preserve well like graphene, which benefits by its non-trivial topological property. Additionally, the calculated Young's modulus and Poisson's ratio show the mechanical anisotropy and excellent resistance of deformation of both the structures. Our work expands the 2D material family and these outstanding properties make B 4 P 4 C 4 and B 2 P 2 C 8 monolayer promising candidates for potential applications in battery, super capacitor, sensor and other fields. • Two novel ternary graphene-like materials are predicted: B 4 P 4 C 4 and B 2 P 2 C 8 . • The band structures illustrate the single/double Dirac point(s) at the Fermi level. • B 2 P 2 C 8 owns high Young's modulus and exhibits non-trivial topological property. • Horizontal strain can modulate the electronic properties of BPC x effectively.

Stretchable tactile sensor with high sensitivity and dynamic stability based on vertically aligned urchin-shaped nanoparticles

Stretchable tactile sensor (STS) is promising for wearable electrical devices, human-machine interfaces, and electronic skin. However, developing a STS based on piezoresistive composite high-pressure sensitivity and dynamic stability remains challenging because stretching deformation destroys the original dispersed state of conductive fillers. This interference of stretching strain on the pressure sensing greatly reduces device performance. Here, we realize an STS based on a piezoresistive composite with different elastic modulus in its functional regions. The composite contains high elastic modulus region (59.1 MPa) of vertically aligned columns of urchin-shaped nanoparticles, and low elastic modulus region (2.4 MPa) of pure matrix. The sensor exhibits high-pressure sensitivity (12.05 kPa−1) owing to the increased conductive contact area between urchin-shaped nanoparticles in the high elastic modulus region. While stretching to 400% strain, the sensor exhibits excellent dynamic stability via strain accommodation in the low elastic modulus region. Our design to separate sensing from multiple stimulus by elastic modulus regulation is easy operative and universal. In addition, the sensor has a low hysteresis coefficient (5.25%), a good detection limit (22 mg), a low response/recovery time (<50 ms), and an excellent mechanical durability (cycled 10,000 times). Finally, we demonstrate the use of our STS for several important stretchable electronic applications to show the feasibility of our design.

Analysis of Piled Concrete Foundation for a 3-MW Class Offshore Wind Turbine along the Southwest Coast in Korea

Concrete foundations have received attention as offshore wind turbine support structures because of their various advantages. However, because of the lack of information on structural analysis and the design method of complex marine environmental loads, concrete foundations cannot be applied on actual sites. Therefore, the structure behavior mechanism and concrete reinforcement design need to be evaluated based on soil-structure interactions. Herein, an efficient method for analysis of piled concrete foundations (PCFs) is presented, and the stability of PCF structures is evaluated under environmental conditions of the coast in Korea for a 3-MW wind turbine. Three analytical parameters for PCF models were defined to consider soil-structure interaction. The results of each model were compared with the displacement, stresses, and natural frequencies. Using the analysis results, a prestressing reinforcement design for concrete foundations was proposed. Quasi-static analysis showed that maximum displacement was sufficiently small and the maximum stresses did not exceed the allowable stresses. PCF showed excellent dynamic performance and structural stability. In addition, stiffness of the soil spring model influenced the natural frequency rather than the stiffness of the pile type. Detailed analysis of the connections between piles and concrete need to be studied in the future.

Electronic structure and photocatalytic properties of H, F modified two-dimensional GeTe

Using the first principle calculation based on the density functional theory, we have systematically investigated the structure stability, electronic structure and photocatalytic properties of two-dimensional single-layered GeTe crystal structure modified by H and F. The results show that the lattice constant, bond angle and bond length of GeTe increase after being modified. The stability analysis shows that all the materials have excellent dynamical, mechanical, and thermal stabilities. The electronic structure analysis shows that the two-dimensional GeTe is an indirect bandgap semiconductor with an energy gap of 1.797 eV, and its energy band is mainly composed of Ge-4p and Te-5p, while it is converted into a direct bandgap semiconductor by H or F modification and H-F co-modification (F and Ge on one side, H and Te on the other), and their corresponding energy gaps are reduced to 1.847 eV (fH-GeTe), 0.113 eV (fF-GeTe) and 1.613 eV (hF-GeTe-hH). However, hH-GeTe-hF is still an indirect band gap semiconductor, and its energy gap is reduced to 0.706 eV. The results of the density of states show that part of the Ge-4p and Te-5p electrons are transferred to a deeper level due to the adsorption of H or F atoms, resulting in a strong orbital hybridization between them and the adsorbed atoms. The effective mass shows that the effective mass of H or F modified and H-F co-modified GeTe (F and Ge on one side, H and Te on the other) decrease, and their carrier mobilities increase. The carrier recombination rates of all modified GeTe materials are lower than that of the intrinsic GeTe, so the semiconductor will be more durable. The electron density difference shows that due to the electronegativities of atoms being different from each other, when H or F is used to modify GeTe, some electrons transfer to H and F atoms, resulting in the weakening of covalent bond between Ge and Te atoms and the enhancement of ion bond. The results of band-edge potential analysis show that GeTe can produce hydrogen and oxygen by photolysis of water. However, the valence band edge potential of the modified GeTe decreases significantly, and its oxidation ability increases considerably, the photocatalytic water can produce O&lt;sub&gt;2&lt;/sub&gt;, H&lt;sub&gt;2&lt;/sub&gt;, O&lt;sub&gt;3&lt;/sub&gt;, OH·, etc. Optical properties show that the modified GeTe can enhance the absorption of visible and ultraviolet spectrum, which indicates that they have great application prospects in the field of photocatalysis.

Toward lateral heterostructures with two-dimensional MoX2H2 (X = As, Sb).

The development of two-dimensional (2D) lateral heterostructures (LHs) with the powerful tunability of electronic properties will be of great realistic significance for next-generation device applications. Herein, we report the novel 2D MoX2 and MoX2H2 (X = As or Sb) monolayer materials with excellent stability. Using first-principles calculations, we demonstrated that 2D MoX2 layers possess the metallic characteristic while the full surface hydrogenation effect would play a role in stabilizing the 2D lattices and lead to band gap openings of 0.83 and 0.50 eV for the 2D MoAs2H2 and MoSb2H2, respectively. In addition, our results suggest that the 2D MoAs2H2 and MoSb2H2 can serve as the 'building blocks' to construct the seamless LHs exhibiting excellent thermal and dynamical stability. The obtained nL-MoAsSb LHs enable the fully tunable band gap engineering behavior with linear tendency as a function of the width of the in-plane components. The phase transition from direct to in-direct band gap was also confirmed in the LHs as the crucial value of n = 3. In view of the type-II band alignment and efficient carrier separation in nL-MoAsSb, the predicted MoX2H2 and nL-MoAsSb LHs not only highlight the promising candidates for 2D pristine materials, but also paves the way for the realization of practical integrating device applications.

Si-Cmma: A silicon thin film with excellent stability and Dirac nodal loop

Silicon thin film with both remarkable stability and graphenelike properties attract many research interests in materials science and condensed matter physics. In this paper, two new two-dimensional silicon allotropes (Si-Cmma and Si-Pmma) with excellent energetic stability and positive dynamical stability are proposed and investigated by first-principles calculations. Si-Pmma possesses the energy of about 203 meV/atom lower than that of silicene and it is a normal metallic phase. Si-Cmma is of about 198 meV/atom lower than silicene in energy and it is confirmed to be a nodal loop semimetallic material. Symmetry analysis reveals that the nodal loop in Si-Cmma is protected by the glide mirror and it belongs to class AI $+$ R of Altland-Zirnbauer symmetry classes. A further three-band $k\ifmmode\cdot\else\textperiodcentered\fi{}\mathrm{p}$ model is constructed to understand the formation of the nodal loop and its strong anisotropy.

Auxetic B4N Monolayer: A Promising 2D Material with in-Plane Negative Poisson's Ratio and Large Anisotropic Mechanics.

Auxetic materials, known with negative Poisson's ratio, are highly desirable for many advanced applications, but the candidates are rather scarce, especially at low dimension. Motivated by the re-entrant structure that often exposes negative Poisson's ratio, we predict a two-dimensional (2D) planar B4N monolayer as a promising auxetic material with unusual in-plane negative Poisson's ratio within the framework of density functional theory calculations. B4N monolayer also exhibits a highly emerged mechanical anisotropy, characterized by Young's modulus and Poisson's ratio. In addition, this monolayer shows superior mechanical flexibility in ideal tensile strength and critical strain values. The phonon dispersion calculations and ab initio molecular dynamics simulations further demonstrate that this monolayer also owns excellent dynamical and thermal stabilities. The fantastic mechanical properties coupled with robust structural stability render the auxetic B4N monolayer promising for future nanomechanical devices.

Theoretical investigating of graphene/antimonene heterostructure as a promising high cycle capability anodes for fast-charging lithium ion batteries

Abstract Alloy Sb as an anode material for Li ion batteries (LIBs) suffers from severe volume expansion and structural breakdown during lithiation process, leading to a abrupt drop of battery cycle performance. The density functional theory is used to explore the adsorption and diffusion of Li atom in the two dimensional graphene/β-antimonene (G/Sb) heterostructure. Our calculation results reveal that the G/Sb heterostructure possesses excellent thermodynamic and dynamic stability with the 0.06 eV band gap, which is much smaller than that of monolayer Sb (1.24 eV) and can insure fast electron transport in the electrode during lithiation/delithiation process. The calculated smaller Li diffusion energy barrier and volume expansion, together with the larger Li diffusion coefficient at 300 K explore greater charge/discharge performance for the G/Sb heterostructure than the corresponding parent bulk, monolayer, and bilayer materials. This is mainly because the monolayer β-Sb within the G/Sb heterostructure can render larger strain compared with that of the pristine β-Sb. We also evaluate the performance of the G/Sb heterostructure as the anode of LIBs by charge analysis and density of states. These results provide conclusive evidence to explore that the G/Sb heterostructure should be a promising candidate anode for flexible and wearable LIBs.

Monolayer SiP nanosheets for near and mid-infrared optoelectronic device applications - A DFT approach

Abstract The invention of geometrically stable low-dimensional semiconductors along with excellent electronic properties is significant to future optoelectronic devices. Using Ab initio technique, we predict the monolayer silicon phosphide nanosheet (SiP-NS) as a good candidate for near and far-infrared optoelectronic devices due to its excellent dynamical stabilities, more chance for experimental exfoliation, fine-tune the electronic properties with the substitution of proper dopant atoms and prominent anisotropy. The structural and dynamical stability of pristine, Al and B substituted SiP-NS are verified by the cohesive energy and phonon-band-structure. The electronic properties of SiP-NS are demonstrated with the support of the density of states spectrum and energy band structure. The direct energy gap value of pristine SiP-NS is found to be 1.34 eV. The main objective of the proposed research article is to fine tune the electronic characteristics of SiP-NS by the substitution of Al and B atom. Pristine Al and B substituted SiP-NS, with dynamical stability and direct band gap, is a promising material for two dimensional near and mid-infrared optoelectronic devices.

Coper Classification Early After Anterior Cruciate Ligament Rupture Changes With Progressive Neuromuscular and Strength Training and Is Associated With 2-Year Success: The Delaware-Oslo ACL Cohort Study

Background: Some athletes demonstrate excellent dynamic stability after anterior cruciate ligament (ACL) rupture and return to sport without ACL reconstruction (ACLR) (copers). Others demonstrate persistent instability despite rehabilitation (noncopers) and require surgical stabilization. Testing to determine coper classification can identify potential copers early after rupture. It is unclear how coper classification changes after a brief intervention and how early classification relates to long-term outcomes. Purpose: (1) To evaluate the consistency of early coper classification (potential coper vs noncoper) before and after progressive neuromuscular and strength training (NMST) among athletes early after acute ACL rupture and (2) to evaluate the association of early coper classification with 2-year success after ACL rupture. Study Design: Cohort study; Level of evidence, 2. Methods: This was a prospective analysis from the Delaware-Oslo ACL Cohort Study, composed of athletes consecutively enrolled early after ACL rupture. Participants (n = 271) were tested and classified as potential copers or noncopers according to established criteria before and after a 10-session NMST program. Success 2 years after ACLR or nonoperative rehabilitation was defined as meeting or exceeding sex- and age-matched norms for knee function, no ACL graft rupture, and ≤1 episode of giving way within the previous year. The McNemar test evaluated changes in coper classification pre- to posttraining. Logistic regression adjusted for baseline characteristics was used to evaluate the association of early coper classification and surgical status with 2-year success. Results: Of 300 athletes enrolled, 271 (90%) completed the posttraining data collection, and 219 (73%) returned for the 2-year follow-up. The coper classifications were different between time points: nearly half of those classified initially as noncopers became potential copers (P < .001). At the 2-year follow-up, 66% of the ACLR group and 74% of the nonoperative group were successful. Athletes who were potential copers posttraining and chose ACLR or nonoperative rehabilitation had 2.7 (95% CI, 1.3-5.6) and 2.9 (95% CI, 1.2-7.2) times the odds of success, respectively, as compared with noncopers who chose ACLR. Conclusion: Coper classification improved after NMST; more athletes became potential copers. Athletes who were potential copers after NMST were more likely to succeed 2 years later regardless of whether they had surgery, strongly supporting the addition of NMST before ACLR. Persistent noncopers fared poorly, indicating that more intensive rehabilitation may be needed.

Enhanced Lewis acid-base adducts in doped stanene: Sensing and photocatalysis

Stanene is a quantum spin Hall insulator and a promising material for optoelectronic and electronic devices. Density functional theoretical (DFT) calculations are performed to understand the effect of elemental doping (In, Sb, and InSb) towards gas sensor and photocatalytic applications. The In/Sb doping in stanene enhances the formation of Lewis acid-base adducts with N-based gas molecules, which in turn improves the sensitivity and selectivity towards a particular gas molecule. Moreover, such stanene based systems show excellent energetic, thermal, dynamical, and mechanical stability and band edge potential, which further suggests that they can be synthesized and used for various applications.

First Principles Study on the Two-dimensional Germanium Arsenide Containing Vacancy

Two-dimensional layered materials exhibit exotic optical, electrical and thermoelectric properties, which have drawn worldwide attention in the past decade. As a novel kind of two-dimensional semiconductor, monolayer Germanium Arsenide (GeAs) can be exfoliated from bulk solid and it owns excellent dynamical and thermal stability and tunable bandgap. Based on the first principles calculations, we investigate the geometric structure, electrical and magnetic properties of the pristine, Germanium vacancy (V_Ge) defected and Arsenide vacancy (V_As) defected monolayer GeAs. In agreement with the experimental results, the pristine monolayer GeAs is a direct bandgap semiconductor with a forbidden band width of 1.48eV. By applying a full spin-polarized description to the system, we find that pristine monolayer GeAs is non-magnetic. Introduction of an atomic vacancy defect in the unit cell of monolayer GeAs can lead to six unequal structures. The most stable structure of monolayer GeAs with V_Ge is also a direct bandgap semiconductor with a forbidden band width of 0.17eV and is non-magnetic. The most stable structure of monolayer GeAs with V_As can generate a magnetic moment of 0.4μ_B, and it has desired half-metallic behavior. These intriguing results indicate that both pristine and intrinsic vacancy defected monolayer GeAs are promising candidates for two-dimensional optoelectronics and spintronic devices with high performance.

Theoretical characterization of hexagonal 2D Be3N2 monolayers

With the help of DFT calculations, a possible synthesis method for monolayer Be3N2 is proposed. Furthermore, its excellent thermal, dynamical, and mechanical stability makes it a material of comparable caliber to that of graphene.

Biomimetic Shells Endow Sub-50 nm Nanoparticles with Ultrahigh Paclitaxel Payloads for Specific and Robust Chemotherapy.

Poor loading capacity and nonspecific tumor accumulation of current drug delivery system remain the critical challenges that prevent nanomedicine from maximizing therapeutic efficacy in cancer treatment. Herein, poly(ester amide) polymers composed of cationic and hydrophobic segments were formulated with a paclitaxel/human serum albumin (PTX/HSA) complex, as well as free PTX, to construct a core-shell nanoparticle (NP) platform with the interior simultaneously reserving PTX and PTX/HSA complex, while the exterior absorbing the PTX/HSA complex. Following systematic screening, the optimized NPs, namely, APP1i@e NPs, exhibited small particle size (43.95 nm), maximal PTX loading (42.23%), excellent dynamic stability (at least 1 week), and acid-triggered release. In vitro results showed that after being trafficked through caveolae-mediated endocytosis, APP1i@e NPs successfully escaped from endo-/lysosomes and then rapidly released cargos in the acidic cytosol, which continued to enhance cytotoxicity by mitochondrial control of apoptosis and suppression of microtubule dynamics. Longer circulation time and superior targeting efficiency post-intravenous injection confirmed that surface PEGylation imparted APP1i@e NPs with the ability to control their pharmacokinetics and biodistribution. The biomimetic shell design with HSA, which enlarged PTX stock and improved biosafety, made APP1i@e NPs more suitable for in vivo applications. Furthermore, in vivo safety and efficacy demonstrated that APP1i@e NPs effectively inhibited the growth of ovarian xenograft tumors, whereas significantly avoiding toxic issues associated with PTX. APP1i@e NPs with surface PEG coating and biomimetic HSA design, therefore, may provide a remarkable improvement in the therapeutic index of taxanes used in the clinic.

Three-dimensional honeycomb carbon: Junction line distortion and novel emergent fermions

Carbon enjoys a vast number of allotropic forms, each possessing unique properties determined by the lattice structures and bonding characters. Here, based on first-principles calculations, we propose a new three-dimensional carbon allotrope—hC28. We show that hC28 possesses excellent energetic, dynamical, thermal, and mechanical stability. It is energetically more stable than most other synthesized or proposed carbon allotropes. The material has a relatively small bulk modulus, but is thermally stable at temperatures as high as 2000 K. The structural, mechanical, X-ray diffraction, and electronic properties are systematically investigated. Particularly, we show that its low-energy band structure hosts multiple unconventional emergent fermions, including the quadratic-contact-point fermions, the birefringent Dirac fermions, and the triple-point fermions. We construct effective models to characterize each kind of fermions. Our work not only discovers a new carbon allotropic form, it also reveals remarkable mechanical and electronic properties for this new material, which may pave the way towards both fundamental studies as well as practical applications.

Monolayered semiconducting GeAsSe and SnSbTe with ultrahigh hole mobility

High carrier mobility and a direct semiconducting band gap are two key properties of materials for electronic device applications. Using first-principles calculations, we predict two types of two-dimensional semiconductors, ultrathin GeAsSe and SnSbTe nanosheets, with desirable electronic and optical properties. Both GeAsSe and SnSbTe sheets are energetically favorable, with formation energies of –0.19 and –0.09 eV/atom, respectively, and have excellent dynamical and thermal stability, as determined by phonon dispersion calculations and Born–Oppenheimer molecular dynamics simulations. The relatively weak interlayer binding energies suggest that these monolayer sheets can be easily exfoliated from the bulk crystals. Importantly, monolayer GeAsSe and SnSbTe possess direct band gaps (2.56 and 1.96 eV, respectively) and superior hole mobility (~ 20 000 cm2∙V–1∙s–1), and both exhibit notable absorption in the visible region. A comparison of the band edge positions with the redox potentials of water reveals that layered GeAsSe and SnSbTe are potential photocatalysts for water splitting. These exceptional properties make layered GeAsSe and SnSbTe promising candidates for use in future high-speed electronic and optoelectronic devices.

A Composite Elastic Conductor with High Dynamic Stability Based on 3D‐Calabash Bunch Conductive Network Structure for Wearable Devices

AbstractAs an indispensable basic component of wearable devices, the composite elastic conductor is widely used for elastic electrode and elastic wire. The ideal elastic conductor is expected to have high conductivity and stretchability, and maintain the resistance constant during stretching. However, it's difficult for the current composite elastic conductors filling solid conductive materials. Here, a composite elastic conductor filling liquid‐metal alloy is reported. Highly conductive and freely deformable liquid‐metal filler achieves the elastic conductor with excellent conductivity and stretchability (electrical conductivity of 1.34 × 103 S cm−1, sheet resistance of 17.59 mΩ □−1, and breaking elongation of 116.86%). Importantly, the filler forms novel three‐dimensional Calabash Bunch conductive network structure in elastic matrix, which enables the elastic conductor to have excellent dynamic stability during stretching. The relative resistance variation is only 4.305% at 116.86% strain. This variation is 2–5 orders of magnitude smaller than that of the reported composite elastic conductor at the same strain, which is important for wearable devices to remain performances fairly unchanged undergo large deformation. Finally, it served as elastic electrodes of a stretchable capacitive strain sensor and elastic wires of a stretchable earphone respectively to demonstrate its potential in wearable devices.

Monolayered Silicon and Germanium Monopnictide Semiconductors: Excellent Stability, High Absorbance, and Strain Engineering of Electronic Properties.

The discovery of stable two-dimensional (2D) semiconductors with exotic electronic properties is crucial to the future electronic technologies. Using the first-principles calculations, we predict the monolayered Silicon- and Germanium-monopnictides as a new class of semiconductors owning excellent dynamical and thermal stabilities, prominent anisotropy, and high possibility of experimental exfoliation. These semiconductors, including the monolayered SiP, SiAs, GeP, and GeAs, possess wide bandgaps of 2.08-2.64 eV obtained by hybrid functional calculation. Under small uniaxial strains (-2 to 3%), dramatic modulations of their band structures are observed, and furthermore, all the 2D monolayers (MLs) can be transformed between indirect and direct semiconductors. The monolayered GeAs and SiP exhibits extraordinary optical absorption in the range of visible and ultraviolet (UV) light spectra, respectively. The exfoliation energies of these monolayers are comparable to graphene, implying a strong probability of successful fabrication by mechanical exfoliation. These intriguing properties of the monolayered silicon- and germanium-monopnictides, combined with their highly stable structures, offer tremendous opportunities for electronic and optoelectronic devices working under UV-visible spectrum.

High Curie-temperature intrinsic ferromagnetism and hole doping-induced half-metallicity in two-dimensional scandium chlorine monolayers.

Two-dimensional (2D) ferromagnetic materials provide new platforms for spintronic applications, but most of the reported 2D magnetic orderings can only be maintained at low temperature. The search for high Curie temperature intrinsic ferromagnetism is still a current hotspot. Herein through comprehensive first-principles calculations and Monte Carlo simulation, we predict a promising 2D scandium chlorine (ScCl) monolayer with intrinsic ferromagnetism and a Curie temperature of 185 K, which is much higher than that of the reported CrI3 monolayer (45 K) and the boiling point of liquid nitrogen (77 K). Moreover, a small amount of hole doping can induce a transition from a ferromagnetic metal to a half-metal. Furthermore, the ScCl monolayer possesses excellent thermal and dynamical stabilities as well as feasibility of experimental exfoliation from its layered bulk. These intriguing electronic and magnetic properties make the ScCl monolayer a promising candidate for spintronic applications.