The thin films of Mn3O4/(x)Nb2O5 oxides (x = 0, 2, 4, and 6 %) were prepared by the electron beam evaporation method and then annealed at 400 °C. The structural analysis showed a tetragonal phase of Mn3O4, according to X-ray diffraction results. The quantitative elemental analysis of films confirms the stoichiometry of the Mn3O4, while the Nb2O5 couldn’t be recognized using energy dispersive X-ray fluorescence. The chemical speciation of the films was investigated using X-ray photoelectron spectroscopy. Three oxidation states of Mn were recognized at average binding energies of 645.70±0.35, 642.99±0.40, and 641.58±0.48 eV that correlated to Mn4+, Mn3+, and Mn2+, respectively. As the Nb2O5 increases, a slight decrease in the binding energy of Mn4+ is recognized, whereas it is nearly constant for the deconvoluted Mn3+ and Mn2+. Two electronic transitions (Eg1 and Eg2) of the optical band gap showed an increase with increasing Nb2O5 dopant from 2 % to 6 %. The optical parameters such as Eosc, the single oscillator energy, Edis, the dispersion energy, both moments (M−1) and (M−3), the ratio of carrier concentration/effective mass (N/m*), and the lattice dielectric constant (εL) were determined. From electrochemical measurements of pure Mn3O4 films, it is found that the voltammetric current density is directly proportional to the scan rates of cyclic voltammetry CV, with good cyclic stability, and by increasing the scan rates, the values of specific capacitance decrease while the values of specific power increase. In doped thin films, no potential drop is observed in the discharging process, which indicates good interfacial contact between the active material and the substrate during the charge/discharge process. These results suggest that the obtained Mn3O4 nanoparticles are a better candidate for supercapacitor applications.
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