Nitrogen-doped amorphous silicon carbide films were grown by a plasma-enhanced chemical vapour deposition (PE CVD) technique. For irradiation experiments we used electron beams with a kinetic energy 160 and 200 keV, a pulse duration of 300 ns, and a beam current of 150 A cm −2. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The amount of incorporated hydrogen detected by the ERD analysis was about 20 at%. For the level of radiation damage and activation of dopants electrical characterization of SiC films was used when diode structures were formed on prepared SiC/Si samples. It was found that with increased kinetic energy of pulses the resistivity of the amorphous SiC films substantially reduced and the radiation damage increased.