We fabricate p- and n-channel Si tunnel field-effect transistors (TFETs) with an epitaxially grown tunnel junction. In a novel source/drain-first and tunnel-junction-last fabrication process, a thin epitaxial undoped Si channel (epichannel) is deposited on a preferentially fabricated p- or n-type source area. The epichannel sandwiched by a gate insulator and a highly doped source well acts as a parallel-plate tunnel capacitor, which effectively multiplies drain current with an enlarged tunnel area. On the basis of its simple structure and easy fabrication, symmetric n- and p-transistor and complementary metal oxide semiconductor inverter operations were successfully demonstrated.