Epitaxial Growth Of InP Research Articles

Improved molecular beam epitaxial growth of InP using solid sources

Molecular beam epitaxy (MBE) has been used to grow high-purity InP layers using solid sources and a graphite cracking zone to generate P2. Close control of slice temperature was achieved by mounting the substrate on a 3 in (75.6 mm) silicon wafer with indium solder. In addition, two differently packed phosphorus sources were investigated to assess the effect of oxides/water on InP purity. Several InP layers with a 77 K mobility of ~50000 cm2V?1s?1 were grown using a phosphorus source vacuum-packed at manufacture.

Epitaxial growth of InP and related alloys

InP has emerged as the third most important semiconductor in the world after Si and GaAs. Since devices invariably require multilayer heterostructures, considerable attention has also been focussed on development of InP-based materials. The utilization of such materials for devices (see Table 1) has increased manifold in recent years not only due to significant advances in epitaxial growth technology but also due to the fact many of their properties are superior to those of Si and GaAs based materials. The superiority of InP due to higher maximum electron drift velocity, peak-to-valley ratio, thermal conductivity and breakdown field, lower ionization coefficient and dielectric constant, MIS structures having low interface state densities, no intrinsic surface states within bandgap, more radiation resistant, etc. over GaAs has already been established for certain device applications. It can be seen from Table 1 that potential applications of InP related alloys have been in the field of microwave, millimeter-wave, ultra-high speed and optoelectronic devices. Such applications have, however, placed stringent demands (i.e. ability to grow high purity and device quality layers, to grow thin and ultra-thin layers with high degree of uniformity in layer thickness, doping and composition and of growing in-situ heterolayers) upon epitaxial growth technology. Keeping these demands in view, an attempt is made in this article to review the salient features of, and recent advances in, various epitaxial growth techniques used for growing InP and lattice matched InP-based materials.

Growth and characterization of InP using metalorganic chemical vapor deposition at reduced pressure

The epitaxial growth of InP by LP-MOCVD is discussed as affected by the orientation and misorientation of the substrate. A study of the sources and control of residual impurities is presented. The incorporation of dopants is discussed.

The role of vapour etching in the growth of epitaxial InP

Undoped single epitaxial layers of InP have been grown by the In-PCI 3-H 2 technique. Hall data, carrier concentration profile and layer surface quality have been studied as a function of pre-growth vapour etching and source saturation conditions. Incomplete vapour etching is shown to lead to layers with low room temperature mobility, large carrier freeze-out between 290 and 77 K, and a large density of defects on the epitaxial layer surface. Carrier concentration profiles through such layers show evidence of a high conductivity region at the interface with the substrate which we suggest is formed by material grown during source saturation. We demonstrate that the growth of high carrier concentration material can take place from an unsaturated source, and we show that a two-layer model accounts quantitatively for the Hall data. These results can be used to specify the appropriate etching conditions to grow epitaxial layers with abrupt interfaces and high mobility.

N +-InP growth on InGaAs by liquid phase epitaxy

High-quality epitaxial growth of InP over InGaAs without dissolution has been achieved by using Sn-rich, rather than the more conventional In-rich, solutions. This technique, which produces n+-InP, is directly applicable to growth of p-i-n and avalanche photodiode structures designed for operation in the 1.55-μm wavelength region of minimum loss in optical fibers.

Thermodynamic analysis of transport of impurities via halides by the close‐spaced epitaxial growth of InP

AbstractA thermodynamic computation of the chemical equilibria that participate to the transport of InP by vapor phase chemical reactions is made for the system In/P/X/H (X = I, Cl) at 1000 and 900°K. The partial pressure of the InX3 species is found to be negligible. A thermodynamic analysis of the chemical reactions involved in the transport of various impurities (Si, Ge, Sn, Pb, Zn, Cd, Mg, Cu, Mn, Al, Ga, S, Se and Te) during the InP epitaxial growth by the close‐spaced method is presented. A large transport probability is found for S and Ga. No transport possibilities are found for the elements: Si, Zn, Cd, Mg, Cu, Se and Te. Transport possibilities through various chemical reactions are found for Ge, Sn, Pb, Mn and Al.

Epitaxial Growth of InP on GaAs in an Open Flow System

Epitaxial Growth of InP on GaAs in an Open Flow System