Thermodynamic analysis of transport of impurities via halides by the close‐spaced epitaxial growth of InP

Abstract

AbstractA thermodynamic computation of the chemical equilibria that participate to the transport of InP by vapor phase chemical reactions is made for the system In/P/X/H (X = I, Cl) at 1000 and 900°K. The partial pressure of the InX3 species is found to be negligible. A thermodynamic analysis of the chemical reactions involved in the transport of various impurities (Si, Ge, Sn, Pb, Zn, Cd, Mg, Cu, Mn, Al, Ga, S, Se and Te) during the InP epitaxial growth by the close‐spaced method is presented. A large transport probability is found for S and Ga. No transport possibilities are found for the elements: Si, Zn, Cd, Mg, Cu, Se and Te. Transport possibilities through various chemical reactions are found for Ge, Sn, Pb, Mn and Al.