Epitaxial Films Research Articles

Ba-leaching-initiated structural destabilization of perovskite Ruthenates during the oxygen evolution reaction

The destabilization of a lattice structure during the oxygen evolution reaction (OER) is one of the most essential aspects for designing and realizing highly efficient electrocatalysts. However, the underlying mechanism of structural evolution or degradation at the microscopic scale on the electrocatalyst surface during the OER has not been elucidated because of the sluggish yet dynamic character of the reaction. To address this issue, the direct observation of the unstable electrocatalytic activity is necessary. In this study, we demonstrate that the structural destabilization of epitaxial cubic perovskite BaRuO3 thin films during the OER originates from Ba leaching, Ru dissolution, and oxygen vacancy. A thin film geometry is adopted to selectively visualize the structural decomposition at the well-defined sample surface. The cubic BaRuO3 thin film initially exhibits high OER activity, which drastically decreases even during the first cyclic voltammetry cycle and is completely lost after the first cycle. The OER activity loss is closely related to the generation of structural defects on the surface, indicating the absence of the Ba and Ru atoms. This study proposes the mechanism underlying the OER activity that can be extended to elucidate the structural destabilization in various Ru- and Ir-based oxide catalysts.

Remote epitaxy of single-crystal rhombohedral WS2 bilayers

Compared to transition metal dichalcogenide (TMD) monolayers, rhombohedral-stacked (R-stacked) TMD bilayers exhibit remarkable electrical performance, enhanced nonlinear optical response, giant piezo-photovoltaic effect and intrinsic interfacial ferroelectricity. However, from a thermodynamics perspective, the formation energies of R-stacked and hexagonal-stacked (H-stacked) TMD bilayers are nearly identical, leading to mixed stacking of both H- and R-stacked bilayers in epitaxial films. Here, we report the remote epitaxy of centimetre-scale single-crystal R-stacked WS2 bilayer films on sapphire substrates. The bilayer growth is realized by a high flux feeding of the tungsten source at high temperature on substrates. The R-stacked configuration is achieved by the symmetry breaking in a-plane sapphire, where the influence of atomic steps passes through the lower TMD layer and controls the R-stacking of the upper layer. The as-grown R-stacked bilayers show up-to-30-fold enhancements in carrier mobility (34 cm2V−1s−1), nearly doubled circular helicity (61%) and interfacial ferroelectricity, in contrast to monolayer films. Our work reveals a growth mechanism to obtain stacking-controlled bilayer TMD single crystals, and promotes large-scale applications of R-stacked TMD.

Temperature dependent interfacial-coupling and magnetization reversal of La2/3Sr1/3MnO3 film with inverted hysteresis features

Temperature-dependent magnetic anisotropy and interfacial coupling of La2/3Sr1/3MnO3 (LSMO) epitaxial films with inverted hysteresis (IHLs) features are investigated using a broadband ferromagnetic resonance (FMR) spectrometer. Through the dispersion relation obtained along [100], [110] and [010] axes, a simplified method is proposed to investigation in-plane magnetic anisotropy by broadband FMR in a cryostat. According to this method, the perpendicular uniaxial anisotropy, magneto-crystalline anisotropy, and interfacial coupling between the LSMO film and hard-magnetic interface layer are investigated as a whole. The measured value of interfacial coupling is −17.6 Oe at 300 K, close to the bias field found in minor loop, i.e., −18.4 Oe. The interfacial coupling is enhanced with the dropping of temperatures, and the value of interfacial coupling changed to −112 Oe at 10 K. A Stoner-Wohlfarth-like model is employed to calculate the hysteresis loops of the films based on the measured values of in-plane magnetic anisotropy and interfacial-coupling. The calculation reveals the mechanism of magnetization reversal and the origin of IHLs found in LSMO films.

Liquid phase epitaxy of GaN films on sapphire substrates under an atmospheric pressure nitrogen ambience

Abstract GaN films were grown on sapphire substrates using liquid phase epitaxy under an atmospheric pressure nitrogen ambience, employing molten Ga and Fe3N as a source mixture. Single-crystal GaN (0001) films were successfully grown on sapphire (0001) substrates within a growth temperature (Tg) range of 750 to 900 oC. When varying the Fe3N concentration in the range of 0.05 to 3 mol%, lower iron nitride resulted in high crystallinity of GaN (0001) films. The incorporation of iron atoms in GaN can negatively impact crystal quality. Parameterizing Tg at a concentration of 0.1 mol% Fe3N showed that a reduction in the peak width of GaN (0002) X-ray rocking curves. However, at 3 mol%, elevating Tg resulted in the degradation of the crystallinity of GaN. This degradation may be attributed to the increased solubility of iron atoms in GaN with increasing Tg.

Symmetry Engineering of Epitaxial Hf0.5Zr0.5O2 Ultrathin Films.

Robust ferroelectricity in HfO2-based ultrathin films has the potential to revolutionize nonvolatile memory applications in nanoscale electronic devices because of their compatibility with the existing Si technology. However, to fully exploit the potential of ferroelectric HfO2-based thin films, it is crucial to develop strategies for the controlled stabilization of various HfO2-based polymorphs in nanoscale heterostructures. This study demonstrates how substrate-orientation-induced anisotropic strain can engineer the crystal symmetry, structural domain morphology, and growth orientation of ultrathin Hf0.5Zr0.5O2 (HZO) films. Epitaxial ultrathin HZO films were grown on the heterostructures of (001)- and (110)-oriented La2/3Sr1/3MnO3/SrTiO3 (LSMO/STO) substrate. Various structural analyses revealed that the (110)-oriented substrate promotes a higher degree of structural order (crystallinity) with improved stability of the (111)-oriented orthorhombic phase (Pca21) of HZO. Conversely, the (001)-oriented substrate not only induces a distorted orthorhombic structure but also facilitates the partial stabilization of nonpolar phases. Electrical measurements revealed robust ferroelectric properties in epitaxial thin films without any wake-up effect, where the well-ordered crystal symmetry stabilized by STO(110) facilitated better ferroelectric characteristics. This study suggests that tuning the epitaxial growth of ferroelectric HZO through substrate orientation can improve the stability of the metastable ferroelectric orthorhombic phase and thereby offer a better understanding of device applications.

Colossal Ferroelectric Photovoltaic Effect in Inequivalent Double-Perovskite Bi2FeMnO6 Thin Films.

Double perovskite films have been extensively studied for ferroelectric order, ferromagnetic order, and photovoltaic effects. The customized ion combinations and ordered ionic arrangements provide unique opportunities for bandgap engineering. Here, a synergistic strategy to induce chemical strain and charge compensation through inequivalent element substitution is proposed. A-site substitution of the barium ion is used to modify the chemical valence and defect density of the two B-site elements in Bi2FeMnO6 double perovskite epitaxial thin films. We dramatically increased the ferroelectric photovoltaic effect to ∼135.67 μA/cm2 from 30.62 μA/cm2, which is the highest in ferroelectric thin films with a thickness of less than 100 nm under white-light LED irradiation. More importantly, the ferroelectric polarization can effectively improve the photovoltaic efficiency of more than 5 times. High-resolution HAADF-STEM, synchrotron-based X-ray diffraction and absorption spectroscopy, and DFT calculations collectively demonstrate that inequivalent ion plays a dual role of chemical strain (+1.92 and -1.04 GPa) and charge balance, thereby introducing lattice distortion effects. The reduction of the oxygen vacancy density and the competing Jahn-Teller distortion of the oxygen octahedron are the main phenomena of the change in electron-orbital hybridization, which also leads to enhanced ferroelectric polarization values and optical absorption. The inequivalent strategy can be extended to other double perovskite systems and applied to other functional materials, such as photocatalysis for efficient defect control.

Crystal orientation of epitaxial film deposited on silicon surface

Direct growth of oxide film on silicon is usually prevented by extensive diffusion or chemical reaction between silicon (Si) and oxide materials. Thermodynamic stability of binary oxides is comprehensively investigated on Si substrates and shows possibility of chemical reaction of oxide materials on Si surface. However, the thermodynamic stability does not include any crystallographic factors, which is required for epitaxial growth. Adsorption energy evaluated by total energy estimated with the density functional theory predicted the orientation of epitaxial film growth on Si surface. For lower computing cost, the adsorption energy was estimated without any structural optimization (simple total of energy method). Although the adsorption energies were different on simple ToE method, the crystal orientation of epitaxial growth showed the same direction with/without the structural optimization. The results were agreed with previous simulations including structural optimization. Magnesium oxide (MgO), as example of epitaxial film, was experimentally deposited on Si substrates and compared with the results from the adsorption evaluation. X-ray diffraction showed cubic on cubic growth [MgO(100)//Si(100) and MgO(001)//Si(001)] which agreed with the results of the adsorption energy.

Resistive switching and synaptic simulation behaviors of epitaxial ZnO/Nb-doped SrTiO3 heterojunction controlled by the substrate orientation

Zinc oxide (ZnO) films were grown epitaxially on Nb-doped SrTiO3 (NSTO) substrates with different orientations using laser pulse deposition to create the (112¯0)ZnO/(100)NSTO, (0002)ZnO/(110)NSTO and (0002)ZnO/(111)NSTO heterojunctions. Epitaxial ZnO films on the (100) NSTO had two orthorgonal domains, resembling the fourfold symmetry of the (100) NSTO substrate. This good matching between the grown ZnO film and NSTO substrate resulted in a lower growth rate, smoother and denser surface, and a higher density of interface defect states. The interface state density was approximately 4.4 × 1012 eV−1cm−2, which was notably higher than that of the other two heterojunctions. Electrical transport studies revealed that ZnO/(100)NSTO heterojunction demonstrated bipolar resistive switching and negative differential resistance (NDR) due to a higher density of donor interface states from contributions of oxygen vacancies, while both the ZnO/(110)NSTO and ZnO/(111)NSTO heterojunction exhibited typical rectifying behavior. The preliminary investigation into synaptic behaviors suggested that (112¯0) ZnO/(100)NSTO heterojunction holds significant potential in brain-inspired neuromorphic computing systems.

Manipulating Spin‐Lattice Coupling in Layered Magnetic Topological Insulator Heterostructure via Interface Engineering

AbstractInduced magnetic order in a topological insulator (TI) can be realized either by depositing magnetic adatoms on the surface of a TI or engineering the interface with epitaxial thin film or stacked assembly of 2D van der Waals (vdW) materials. Herein, the observation of spin‐phonon coupling in the otherwise non‐magnetic TI Bi2Te3 is reported, due to the proximity of FePS3 (an antiferromagnet (AFM), TN ≈ 120 K), in a vdW heterostructure framework. Temperature‐dependent Raman spectroscopic studies reveal deviation from the usual phonon anharmonicity originated from spin‐lattice coupling at the Bi2Te3/FePS3 interface at/below 60 K in the peak position (self‐energy) and linewidth (lifetime) of the characteristic phonon modes of Bi2Te3 (106 and 138 cm−1) in the stacked heterostructure. The Ginzburg‐Landau (GL) formalism, where the respective phonon frequencies of Bi2Te3 couple to phonons of similar frequencies of FePS3 in the AFM phase, is adopted to understand the origin of the hybrid magneto‐elastic modes. At the same time, the reduction of characteristic TN of FePS3 from 120 K in isolated flakes to 65 K in the heterostructure, possibly due to the interfacial strain, which leads to smaller Fe‐S‐Fe bond angles as corroborated by computational studies using density functional theory (DFT). Besides, inserting hexagonal boron nitride within Bi2Te3/FePS3 stacking regains the anharmonicity in Bi2Te3. Controlling interfacial spin‐phonon coupling in stacked heterostructure can have potential application in surface code spin logic devices.

Expanded Stability of Layered SnSe-PbSe Alloys and Evidence of Displacive Phase Transformation from Rocksalt in Heteroepitaxial Thin Films.

Bulk PbSnSe has a two-phase region, or miscibility gap, as the crystal changes from a van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions. This structural transition drives a large contrast in the electrical, optical, and thermal properties. We realize low temperature direct growth of epitaxial PbSnSe thin films on GaAs via molecular beam epitaxy using an in situ PbSe surface treatment and show a significantly reduced two-phase region by stabilizing the Pnma layered structure out to Pb0.45Sn0.55Se, beyond the bulk limit around Pb0.25Sn0.75Se at low temperatures. Pushing further, we directly access metastable two-phase films of layered and rocksalt grains that are nearly identical in composition around Pb0.50Sn0.50Se and entirely circumvent the miscibility gap. We present microstructural and compositional evidence for an incomplete displacive transformation from a rocksalt to layered structure in these films, which we speculate occurs during the sample cooling to room temperature after synthesis. In situ temperature-cycling experiments on a Pb0.58Sn0.42Se rocksalt film reproduce characteristic attributes of a displacive transition and show a modulation in electronic properties. We find well-defined orientation relationships between the phases formed and reveal unconventional strain relief mechanisms involved in the crystal structure transformation using transmission electron microscopy. Overall, our work adds a scalable thin film integration route to harness the dramatic contrast in material properties in PbSnSe across a potentially ultrafast crystalline-crystalline structural transition.

Recombination dynamics and manybody effect of excitons in large-area monolayer MoS2 capped with (111) NiO epitaxial layer

CVD grown monolayer MoS2 films on c-sapphire substrates are vacuum annealed and capped with (111) NiO epitaxial films using pulsed laser deposition technique. Time, energy and polarization resolved optical techniques are used to understand the effect of capping on the excitonic properties of the monolayer MoS2. It has been observed that trion contribution in the photoluminescence (PL) spectra increases after the capping, suggesting an enhancement of electron concentration in the conduction band. This has been attributed to the capping driven reduction of physisorbed air molecules from the sulphur vacancy ( VS ) sites. Note that the air molecules act as passivating agents for the VS -donors. Low temperature polarization resolved PL spectroscopy and ultrafast pump and probe transient absorption spectroscopy (TAS) show an increase of the biexcitonic population in the system after the encapsulation. The TAS study further reveals longer lifetime for both A and B excitons in capped samples implying a reduction of non-radiative recombination rate of the excitons after the capping. It has also been observed that in the capped samples, K/K′ valleys are populated with trions under sufficiently high pump powers. This has been attributed to the lower non-radiative recombination rates of the high energy photoexcited carriers and the faster transfer of either electrons or holes from the high energy pockets to the K/K′ valleys. The study further reveals different many-body effects in excitons and trions.

The atomic configuration and metallic state of extrinsic defects in Nb-doped BiFeO3 thin films

Defects in ferroelectric materials can cause microscopic strain and electron doping, which opens up new possibilities for unique physical properties in nanoelectronics. However, comprehending the relationship between these deep-buried defect configurations and the resulting physical properties is a long-term challenge. Here, utilizing the integrated differential phase imaging technique equipped in scanning transmission electron microscopy combined with energy dispersive X-ray spectroscopy, we show the full element-resolved atomic configuration of characteristic extrinsic defects in Nb-doped epitaxial BiFeO3 thin films. Atomic-resolution characterization reveals that the Nb doping substitutes Fe at the center of an oxygen octahedron and creates Fe vacancies near the defect core, leading to the formation of one perovskite cell-wide BiNbO3 chain that is expanded by 19 % in perovskite cell volume and rotated by 45° relative to the matrix lattice. Further quantitative analysis of the defect demonstrates that the ferroelectric polarization distribution around the dopant-induced defects displays a “head-to-head” configuration, indicating the accumulation of negative charges. Supported by electron energy loss spectroscopy and density functional theory calculations, the linear defect leads to one-dimensional metallic channels embedded within the ferroelectric BiFeO3 matrix. These atomic-scale findings establish the structure-functionality relationship of extrinsic defect in Nb-doped BiFeO3 thin films, providing new insight into their fundamental understanding and potential use in low-dimensional nanoelectronics devices.

Wide-range thermal conductivity modulation based on protonated nickelate perovskite oxides

The perovskite oxides ReNiO3 (Re = rare-earth elements) are promising functional materials due to their strongly correlated electrons. Except for the well-known intrinsic metal-insulating transition in these materials, recent progresses have proved that protonation of ReNiO3 can bring about interesting Mott transition in this series. To date, in these protonated species (H-ReNiO3), huge resistance switching, fast ionic diffusion, and their applications as an iontronic transistor, memristor, and fuel cell are reported. In this work, the thermal conductivities of H-ReNiO3 (Re = La, Nd, Sm, and Eu) epitaxial thin films are investigated. The protonation-induced Mott transition can effectively modulate the electronic thermal conductivity while the lattice thermal conductance is less affected. Hence, at room temperature, the metallic LaNiO3 and NdNiO3 exhibit reversible wide thermal conductivity modulation, in ranges of 2.6–12.0 and 1.6–8.0 W m−1 K−1, respectively. These values are much larger than other thermal regulation materials based on transition metal oxides. Thus, our work reveals the great potential of ReNiO3 being applied as a thermal-regulating material. The fast ionic diffusion in H-ReNiO3 also guarantees that a fast response and wide-range thermal transistor can be realized by H-LaNiO3 and H-NdNiO3 in the future.

Status of h-BN quasi-bulk crystals and high efficiency neutron detectors

III-nitrides have fomented a revolution in the lighting industry and are poised to make a huge impact in the field of power electronics. In the III-nitride family, the crystal growth and use of hexagonal BN (h-BN) as an ultrawide bandgap (UWBG) semiconductor are much less developed. Bulk crystals of h-BN produced by the high-temperature/high-pressure and the metal flux solution methods possess very high crystalline and optical qualities but are impractical to serve as substrates or for device implementation as their sizes are typically in millimeters. The development of crystal growth technologies for producing thick epitaxial films (or quasi-bulk or semi-bulk crystals) in large wafer sizes with high crystalline quality is a prerequisite for utilizing h-BN as an UWBG electronic material. Compared to traditional III-nitrides, BN has another unique application as solid-state neutron detectors, which however, also require the development of quasi-bulk crystals to provide high detection efficiencies because the theoretical efficiency (ηi) relates to the detector thickness (d) by ηi=1−e−dλ, where λ denotes the thermal neutron absorption length which is 47 μm (237 μm) for 10B-enriched (natural) h-BN. We provide an overview and recent progress toward the development of h-BN quasi-bulk crystals via hydride vapor phase epitaxy (HVPE) growth and the attainment of thermal neutron detectors based on 100 μm thick 10B-enriched h-BN with a record efficiency of 60%. The thermal neutron detection efficiency was shown to enhance at elevated temperatures. Benchmarking the crystalline and optical qualities of h-BN quasi-bulk crystals with the state-of-the-art mm-sized bulk crystal flakes and 0.5 μm thick epitaxial films identified that reducing the density of native defects such as vacancies remains the most critical task for h-BN quasi-bulk crystal growth by HVPE.

Magnetic interactions in epitaxial films of Mn[formula omitted](Ge[formula omitted]Si[formula omitted])[formula omitted]/Ge(111) : 55Mn NMR study

55Mn NMR experiments have been performed at 4.2 K on a series of Mn5(Ge1−xSix)3 epitaxial films (0⩽x⩽0.55) to investigate changes introduced by silicon when it replaces germanium in a hexagonal Mn5Ge3 crystal lattice. The Si/Ge substitution was found to reduce the magnetic moment on manganese located in the 6 g sublattice creating a new population of manganese atoms with distinctly lower magnetic moment. This effect is attributed to the modified exchange interactions due to a lattice distortion introduced by Si. Interestingly, these modified Mn sites retain the orbital moment practically unaltered. The amount of new manganese environments in the 6 g sublattice coincides with a probability of Mn having two Si neighbors as first neighbors. Mn atoms located in the 4d sublattice are not significantly affected by the Si substitution in the studied concentration range.

Excellent intrinsic magnetic properties in the TbCu7-type Sm-Fe-N compound

We report excellent intrinsic magnetic properties of SmFe9Nδ (δ=0, 0.5, 0.7 and 1.1) epitaxial thin films with TbCu7-type crystal structure, i.e., room temperature saturation magnetization (μ0Ms) of 1.64 T, Curie temperature (Tc) of 771 K and magnetic anisotropy field (μ0HA) of ∼22 T for δ=1.1 the saturation magnetization of which is superior to that of Sm2Fe17N3 (μ0Ms= 1.57 T) and Nd2Fe14B compounds (μ0Ms= 1.61 T). X-ray diffraction and transmission electron microscopy revealed that the thin films have a highly textured single TbCu7-type phase with its c-axis perpendicular to the film. Heat treatment of the thin films under N atmosphere expands the lattice and increases the unit cell volume of the SmFe9Nδ structure, which also switches the magnetocrystalline anisotropy from easy plane (δ = 0) to easy axis (δ=1.1). Furthermore, the μ0Ms and Tc of SmFe9Nδ films also increased with increasing nitrogen content in the structure, leading to promising intrinsic magnetic properties. Based on this study, we can conclude that the rare-earth lean SmFe9Nδ based TbCu7-type compound has potential for the development of high performance anisotropic bonded magnets with superior performance to that of existing anisotropic Sm2Fe17N3 or Nd-Fe-B bonded magnets.

Controllable and reversible electric field tuning of photoluminescence response in lanthanide ions doped ferroelectric films

The rare-earth doped ferroelectric photoluminescence (PL) phosphors are attracting considerable interest because of their flexible structure, wide band gap and high-quality fluorescence signal emission. Although the change of PL performance in different samples have been solved to a certain extent, how to achieve the tuning of PL intensity in one sample sensitively and reversibly is still an issue. In this work, we present an "electric-elastic-optical" coupled structure of 0.94Bi0.5Na0.5TiO3–0.06BaTiO3:1 mol%Eu3+ (BNTBT:Eu)/ 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 (PMN-PT) heterostructures, which transfers strain from the PMN-PT to the BNTBT:Eu film via the converse piezoelectric effect and dynamically modulates the PL response of the epitaxial thin film. Our findings demonstrate that the PL response of the thin film can be effectively and linearly tuned under the influence of an external electric field. The relative change in the PL intensity (ΔI/I) of the BNTBT:Eu film was found to be linearly correlated with the lateral strain of the substrate. We also propose a novel design strategy for detecting strain, with significant implications for using BNTBT:Eu/PMN-PT heterostructures as sensors for integrating piezophotonic devices. This work provides valuable insights into the feasibility of electric field tuning of PL performance, which could inspire future research endeavors in the fields of nanophotonics, optical storage technology and photovoltaics.

Epitaxial growth of gehlenite in CaO–MgO–Al2O3–SiO2 based glass ceramic induced by Nb2O5 addition

In this study, the crystallization behavior of a CaO–MgO–Al2O3–SiO2 based glass ceramics with Nb2O5 addition was investigated by using DSC, XRD and TEM techniques. It was found that three crystalline phases, namely, CaNb2O6, diopside and Gehlenite (Ca2Al2SiO7), were formed from the glass matrix during the crystallization heat treatment. The CaNb2O6 phase was the first to precipitate from the glass matrix at around 850 °C, acting as a nucleating agent that facilitated the formation of Gehlenite (Ca2Al2SiO7) at 900–950 °C. The TEM observation revealed a consistent orientation relationship between the CaNb2O6 and the Gehlenite (Ca2Al2SiO7) phases, indicating that CaNb2O6 could induce the epitaxial growth of Gehlenite (Ca2Al2SiO7). This result provides a new insight into the preparation of Gehlenite epitaxial films and glass ceramics.

Semiconductor Membrane Exfoliation: Technology and Application

AbstractFlexible semiconductor film‐based optoelectronic devices have garnered significant attention in emerging fields such as the Internet of Things (IoT), wearable devices, and smart healthcare due to their wide range of applications. It is challenging to directly grow the foundational materials of optoelectronic devices, specifically semiconductor thin film structures, on flexible substrates. Instead, they are typically fabricated on conventional rigid thick semiconductor substrates. Consequently, the exfoliation and transfer of epitaxial semiconductor thin film structures onto substrates constitute pivotal steps in the production of flexible optoelectronic devices. The integration of hard inorganic semiconductor materials with flexible substrates offers a solution to the limitations of rigidity and brittleness associated with conventional optoelectronic devices and can be used to address challenges from design to manufacturing. This review provides a comprehensive overview of the working principles and recent advances of various techniques aimed at achieving the membrane exfoliation and transfer of semiconductor structures on conventional rigid substrates. It also reviews the possible applications of the transferred membrane in a variety of optoelectronic devices. Finally, it offers insights into the potential of high‐end semiconductor manufacturing and flexible semiconductor devices to play a critical role in advancing next‐generation optoelectronics technologies.

Permissible domain walls in monoclinic ferroelectrics. Part II. The case of MC phases.

Monoclinic ferroelectric phases are prevalent in various functional materials, most notably mixed-ion perovskite oxides. These phases can manifest as regularly ordered long-range crystallographic structures or as macroscopic averages of the self-assembled tetragonal/rhombohedral nanodomains. The structural and physical properties of monoclinic ferroelectric phases play a pivotal role when exploring the interplay between ferroelectricity, ferroelasticity, giant piezoelectricity and multiferroicity in crystals, ceramics and epitaxial thin films. However, the complex nature of this subject presents challenges, particularly in deciphering the microstructures of monoclinic domains. In Paper I [Biran & Gorfman (2024). Acta Cryst. A80, 112-128] the geometrical principles governing the connection of domain microstructures formed by pairing MAB type monoclinic domains were elucidated. Specifically, a catalog was established of `permissible domain walls', where `permissible', as originally introduced by Fousek & Janovec [J. Appl. Phys. (1969), 40, 135-142], denotes a mismatch-free connection between two monoclinic domains along the corresponding domain wall. The present article continues the prior work by elaborating on the formalisms of permissible domain walls to describe domain microstructures formed by pairing the MC type monoclinic domains. Similarly to Paper I, 84 permissible domain walls are presented for MC type domains. Each permissible domain wall is characterized by Miller indices, the transformation matrix between the crystallographic basis vectors of the domains and, crucially, the expected separation of Bragg peaks diffracted from the matched pair of domains. All these parameters are provided in an analytical form for easy and intuitive interpretation of the results. Additionally, 2D illustrations are provided for selected instances of permissible domain walls. The findings can prove valuable for various domain-related calculations, investigations involving X-ray diffraction for domain analysis and the description of domain-related physical properties.