The large-area (20.3 cm2) NP-AlGaN DBRs, which are prepared via electrochemical (EC) etching in an acid solution, present high reflectivity (>90%) and wide spectral stopband. Then the nanoporous AlGaN Distributed Bragg reflectors (NP-AlGaN DBRs) are used as substrates for regrowth of ultraviolet light-emitting diodes (LEDs). Compared to those of the reference LEDs, the ultraviolet LEDs with the DBRs show sixfold enhancement and red-shift of the luminescence peak, as well as a rising PL lifetime. Luminescence enhancement is owing to the low defect density of the AlGaN/GaN MQWs and high light reflection effect of the NP-AlGaN DBRs. The red-shift is due to the stress relaxation in the AlGaN/GaN MQWs layer related to the wet etching and regrowth process.
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