Abstract
The results of studying the luminescent properties of epitaxially grown structures with spatially ordered Ge/Si nanoislands (quantum dots), in which the pit-patterned “silicon-on-insulator” substrates serve both for the spatial ordering of quantum dots and for the two-dimensional photonic crystal formation, are presented. It is found that with a certain choice of pit-patterned substrate parameters (diameter of pits and their spatial period), in the photoluminescence spectra of such structures, the multiple narrow peaks are observed. In addition, a significant increase in the quantum dot luminescence signal intensity occurs in the near-infrared range. The effects are related to resonance interaction of quantum dot emitters with photonic crystal modes. The luminescence enhancement effect persists up to room temperatures.
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