A method is suggested to improve the characteristics of light emitting diodes (LEDs) by using p‐GaN structure with heavily Mg‐doping grown at low temperature in full N2 environment. The LED exhibits a 36.4% enhancement in light output power (LOP) at 222 A cm−2 due to the higher hole concentration as compared to the normal p‐GaN layer. Meanwhile, the experimental results prove that the optimized LED structure shows reduced efficiency droop behavior, smaller peak wavelength blueshift and narrower electroluminescence (EL) spectrum broadening.