Abstract
A GaN-based light-emitting diode (LED) with reflective current blocking layer (CBL) underneath p-electrode pad and backside hybrid reflector was fabricated and investigated. With a 20 mA injection current, the LED with SiO2/ITO/Al reflective CBL deposited on naturally textured p-InGaN/p-GaN surface exhibited a light output power that was 7.6% and 18.5% higher than those of the textured LEDs with SiO2 CBL and without SiO2 CBL, respectively. The LED with backside hybrid reflector exhibited a light output power that was 30% higher than that of LED without the hybrid reflector. The enhancement in light output power is attributed to the improved current spreading performance via the SiO2 CBL, the Al omnidirectional metal reflector to prevent the light absorption by the opaque p-electrode pad, and the backside hybrid reflector to extract bottom-emitting light.
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