Energy Levels Of Quantum Dots Research Articles

Quantum Mechanical Analysis Based on Perturbation Theory of CdSe/ZnS Quantum-Dot Light-Emission Properties.

A simulation of quantum dot (QD) energy levels was designed to reproduce a quantum mechanical analytic method based on perturbation theory. A Schrödinger equation describing an electron–hole pair in a QD was solved, in consideration of the heterogeneity of the material parameters of the core and shell. The equation was solved numerically using single-particle basis sets to obtain the eigenstates and energies. This approach reproduced an analytic solution based on perturbation theory, while the calculation was performed using a numerical method. Owing to the effectiveness of the method, QD behavior according to the core diameter and external electric field intensity could be investigated reliably and easily. A 9.2 nm diameter CdSe/ZnS QD with a 4.2 nm diameter core and 2.5 nm thick shell emitted a 530 nm green light, according to an analysis of the effects of core diameter on energy levels. A 4 nm redshift at V/cm electric field intensity was found while investigating the effects of external electric field on energy levels. These values agree well with previously reported experimental results. In addition to the energy levels and light emission wavelengths, the spatial distributions of wavefunctions were obtained. This analysis method is widely applicable for studying QD characteristics with varying structure and material compositions and should aid the development of high-performance QD technologies.

Electrochemically Determining Electronic Structure of ZnO Quantum Dots with Different Surface Ligands.

The electronic structure of quantum dots (QDs) including band edges and possible trap states is an important physical property for optoelectronic applications. The reliable determination of the energy levels of QDs remains a big challenge. Herein we employ cyclic voltammetry (CV) to determine the energy levels of three types of ZnO QDs with different surface ligands. Coupled with spectroscopic techniques, it is found that the onset potential of the first reductive wave is likely related to the conduction band edges while the first oxidative wave originates from the trap states. The determined specific energy levels in CV further demonstrates that the ZnO QDs without surface ligands mainly have oxygen interstitial defects whilst the ZnO QDs covered with ligands contain oxygen vacancies. The present electrochemical method offers a powerful and effective way to determine the energy levels of wide bandgap ZnO QDs, which will boost their device performance.

Voltammetric determination of electronic structure of quantum dots

Electronic structure plays an important role in determining the physiochemical properties of semiconductor quantum dots (QDs). Fabrication of high-performance QD devices relies on the reliable determination of electronic structure of QDs. Voltammetry enables the easily accessible detection on the energy levels of QDs. Herein, the fundamentals of voltammetric detection are first reviewed and discussed. Since the common ways used for tailoring electronic structure of QDs include tuning size, surface engineering, and varying composition, we next summarize the recent research on using voltammetry for probing the energy levels when studying these three effects.

Spin polarization transport through a four InAs quantum dots system irradiated by terahertz light field

We design a four InAs quantum dot system in which two leads are irradiated by terahertz light fields. The average current through the system is obtained by means of non-equilibrium Green's function theory. Typical photon-assisted tunneling is observed in the current energy spectrum. 100% polarization can be achieved by adjusting the intensity of Zeeman magnetic field or the amplitude of terahertz light field. As the frequency of terahertz light field is invariant, a zero current can be obtained by adjusting the amplitude of the terahertz light field, indicating an optically controlled quantum switch device. The spin polarization can be converted between 0 and 1 by tuning the energy level of quantum dots, suggesting a physical scheme of a polarization pulse device. Moreover, the system can be constructed as a terahertz detector due to the oscillation properties of spin polarization. The present work sheds lights onto the design of quantum computing and spin-dependent quantum devices.

Highly efficient green InP-based quantum dot light-emitting diodes regulated by inner alloyed shell component

InP-based quantum dot light-emitting diodes (QLEDs), as less toxic than Cd-free and Pb-free optoelectronic devices, have become the most promising benign alternatives for the next generation lighting and display. However, the development of green-emitting InP-based QLEDs still remains a great challenge to the environmental preparation of InP quantum dots (QDs) and superior device performance. Herein, we reported the highly efficient green-emitting InP-based QLEDs regulated by the inner alloyed shell components. Based on the environmental phosphorus tris(dimethylamino)phosphine ((DMA)3P), we obtained highly efficient InP-based QDs with the narrowest full width at half maximum (~35 nm) and highest quantum yield (~97%) by inserting the gradient inner shell layer ZnSexS1−x without further post-treatment. More importantly, we concretely discussed the effect and physical mechanism of ZnSexS1–x layer on the performance of QDs and QLEDs through the characterization of structure, luminescence, femtosecond transient absorption, and ultraviolet photoelectron spectroscopy. We demonstrated that the insert inner alloyed shell ZnSexS1−x provided bifunctionality, which diminished the interface defects upon balancing the lattice mismatch and tailored the energy levels of InP-based QDs which could promote the balanced carrier injection. The resulting QLEDs applying the InP/ZnSe0.7S0.3/ZnS QDs as an emitter layer exhibited a maximum external quantum efficiency of 15.2% with the electroluminescence peak of 532 nm, which was almost the highest record of InP-based pure green-emitting QLEDs. These results demonstrated the applicability and processability of inner shell component engineering in the preparation of high-quality InP-based QLEDs.

Two-Electron Quantum Dots with Parabolic Confinement (Low Lying Para- and Ortho-States)

Three low lying energy levels of a 3D two-electron quantum dot (QD) with parabolic confinement are obtained by the variational method. The proposed interpolation formulas for the variation parameters allow one to recover the energy levels in a wide range of the Coulomb interaction constant. The quantum states of the QD are divided into the para- and ortho-states like in the theory of helium atom. The quantum transitions from the ortho-state to the para-state are possible only with account of the spin-orbit interaction. At low temperatures, an ensemble of two-electron QDs contains dots in the ground para-state and in the first excitedortho-state, which is metastable. These QDs have the entangled spin wave functions that are related to the Einstein–Podolsky–Rosen (EPR) states desirable for the quantum information protocol.

Modelling of density of states and energy level of chalcogenide quantum dots

AbstractQuantum dots (QDs) or semiconductor nanocrystals are luminous materials with unique optical properties that can be fine-tuned by varying the size of the material. Chalcogenide QDs show strong quantum confinements effects owing to the fact that the exciton Bohr radius is much larger than the particle size, and tunable energy bandgap leads to widespread technological interest in near-infrared optical devices. In this communication, one dimensional Cu2SnS3and PbSexS1-xQDs is modeled by a particle in a box model which was used to compute energies and density of states. The density of states and the energy level of QDs are determined as a function of the strengths of the potential walls of the inner box. The results exhibit that the density of states decreases exponentially with an increase in the energy level of QDs. The density of states at lower energy levels is more significant than what is observed in higher energy levels.

Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

We present a first comprehensive study on deterministic spin preparation employing excited state resonances of droplet etched GaAs quantum dots. This achievement facilitates future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions the properties of different quantum dot energy levels, i.e. shells, are revealed. The innovative use of polarization resolved excitation and detection in quasi-resonant excitation spectroscopy facilitates determination of $85$ $\%$ maximum spin preparation fidelity - irrespective of the relative orientations of lab and quantum dot polarization eigenbases. Additionally, the characteristic non-radiative decay time is investigated as a function of ground state, excitation resonance and excitation power level, yielding decay times as low as $29$ ps for s-p-shell exited state transitions. Finally, by time resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions thereby influencing its charge and coherence.

Velocity-dependent potential effects on two interacting electrons in Cornell quantum dot planted in plasma medium

In this study, the energy levels of two-electron Cornell quantum dot (TECQD) immersed in Debye and quantum plasma mediums are probed. To model plasma mediums, the more general exponential cosine screened Coulomb (MGECSC) is suggested. The presence of TECQD in plasma environment and velocity-dependent potential (VDP) effect in the system render very difficult to solve the relevant wave equation. Since the analytical solution of the relevant wave equation is very difficult, the numerical asymptotic iteration method (AIM) is used. As well as the effects of the encompassing parameters on the energy levels and possible radiations of TECQD, the effects of VDP and quantum (and Debye) plasma medium are also presented in detail. In addition, the alternativeness of VDP, quantum (and Debye) plasma and encompassing parameters to each other on these effects are also discussed.

Dynamical leakage of Majorana mode into side-attached quantum dot

We study a hybrid structure, comprising the single-level quantum dot attached to the topological superconducting nanowire, inspecting dynamical transfer of the Majorana quasiparticle onto normal region. Motivated by the recent experimental realization of such heterostructure and its investigation under the stationary conditions [L. Schneider et al., https://doi.org/10.1038/s41467-020-18540-3, Nature Communications 11, 4707 (2020)] where the quantum dot energy level can be tuned by gate potential we examine how much time is needed for the Majorana mode to leak into the normal region. We estimate, that for typical hybrid structures this dynamical process would take about 20 nanoseconds. We propose a feasible empirical protocol for its detection by means of the time-resolved Andreev tunneling spectroscopy.

Photomultiplication‐Type Organic Photodetectors with Fast Response Enabled by the Controlled Charge Trapping Dynamics of Quantum Dot Interlayer

AbstractA novel photomultiplication (PM)‐type organic photodiode (OPD) that responds much faster (109 kHz bandwidth) than conventional PM‐type OPDs is demonstrated. This fast response is achieved by introducing quantum dots (QDs) as a PM‐inducing interlayer at the interface between the electrode and the photoactive layer. When the device is illuminated, the photogenerated electrons within the photoactive layer are rapidly transferred and trapped in the trap states of the QD interlayer. The electron trapping subsequently leads to charging of the QD and a consequent shift of the QD energy levels, thereby inducing hole injection from the electrode. This PM mechanism is distinct from that of conventional PM‐type OPDs, whose PM usually requires a long time to induce hole (or electron) injection because of the slow transport and accumulation of electrons (or holes) within the photoactive layer. Because of its PM mechanism, the proposed QD‐interlayer PM‐type OPD achieves high bandwidth and high specific detectivity. In addition, it is demonstrated that the response speed of the proposed device is closely related to the charge trapping/detrapping dynamics of the QDs. This work not only offers a new concept in the design of fast‐responding PM‐type OPDs but also provides comprehensive understanding of the underlying device physics.

Influence of Geometrical Shape on the Characteristics of the Multiple InN/InxGa1-xN Quantum Dot Solar Cells.

Solar cells that are based on the implementation of quantum dots in the intrinsic region, so-called intermediate band solar cells (IBSCs), are among the most widely used concepts nowadays for achieving high solar conversion efficiency. The principal characteristics of such solar cells relate to their ability to absorb low energy photons to excite electrons through the intermediate band, allowing for conversion efficiency exceeding the limit of Shockley–Queisser. IBSCs are generating considerable interest in terms of performance and environmental friendliness. However, there is still a need for optimizing many parameters that are related to the solar cells, such as the size of quantum dots, their shape, the inter-dot distance, and choosing the right material. To date, most studies have only focused on studying IBSC composed of cubic shape of quantum dots. The main objective of this study is to extend the current knowledge of IBSC. Thus, we analyze the effect of the shape of the quantum dot on the electronic and photonic characteristics of indium nitride and indium gallium nitride multiple quantum dot solar cells structure considering cubic, spherical, and cylindrical quantum dot shapes. The ground state of electrons and holes energy levels in quantum dot are theoretically determined by considering the Schrödinger equation within the effective mass approximation. Thus, the inter and intra band transitions are determined for different dot sizes and different inter dot spacing. Consequently, current–voltage (J-V) characteristic and efficiencies of these devices are evaluated and compared for different shapes. Our calculations show that, under fully concentrated light, for the same volume of different quantum dots (QD) shapes and a well determined In-concentration, the maximum of the photovoltaic conversion efficiencies reaches 63.04%, 62.88%, and 62.43% for cubic, cylindrical, and spherical quantum dot shapes, respectively.

Studyof the Spin-Orbit Interaction Effects on Energy Levels and the Absorption Coefficients of Spherical Quantum Dotand Quantum Anti-Dotunderthe Magnetic Field

In this study, the energy levels of spherical quantum dot (QD) and spherical quantum anti-dot (QAD) with hydrogenic impurity in the center, in the presence of spin-orbit interaction (SOI) and weak external magnetic field have been studied. To this aim, solving the Schrodinger equation for the discussed systems by using the finite difference method, the wave functions and energies of these systems are calculated. Then the effect of the external magnetic field, system radius size and height of potential barrier on the energy levels and also the linear, nonlinear and total absorption coefficients, (ACs), of the mentioned systems are studied. Numerical results show that the SOI in both models causes a split of 2p level into two sub-levels of 2p_(1/2)and 2p_(3/2) where the low index indicates the total angular momentum J. Also, considering the electron spin, under an applied magnetic field, the 1s and 2p levels split into two sub-levels and six sub-levels, respectively. Furthermore, in this research, it is proved that energy changes are significantly different as a function of radius size and height of the potential barrier in QD and QAD models and the ACs of these systems behave differently according to the incident photon energy at the same condition.

Quantum dot in a hybrid structure with dipolar excitons

Electron states in a quantum dot (QD) located near a 2D system of dipolar excitons are perturbed by fluctuations of the exciton density caused by the electron-exciton interaction. This results in the frequency changes of electron transitions in a QD. The frequency depends on the exciton density, as well as on the exciton gas phase state. In the present work, the shifts of the two lowest QD energy levels are found both in the normal state of the exciton system and for the Bose-Einstein condensation (BEC) regime.

Gate-tunable quantum dot formation between localized-resonant states in a few-layer MoS2

We demonstrate a gate-tunable quantum dot (QD) located between two potential barriers defined in a few-layer MoS2. Although both local gates used to tune the potential barriers have disorder-induced QDs, we observe diagonal current stripes in current resonant islands formed by the alignment of the Fermi levels of the electrodes and the energy levels of the disorder-induced QDs, as evidence of the gate-tunable QD. We demonstrate that the charging energy of the designed QD can be tuned in the range of 2–6 meV by changing the local-gate voltages in ∼1 V.

Magnetic field dependence of the electronic and optical properties of silicene quantum dots

Utilizing the tight-binding method, we investigate the electronic and optical properties of the zigzag hexagonal silicene quantum dots (ZHSQDs) subjected to a perpendicular magnetic field. The edge states emerge in the energy gap as the size of ZHSQDs increases. In the presence of spin–orbit coupling (SOC), the corresponding energy levels of edge states oscillate with magnetic flux. The reason is that the energy levels of silicene quantum dots are splitted in the presence of SOC. In addition, the optical absorption peak undergoes blue shift as the strength of SOC increases, and the optical absorption mainly occurs between the Landau levels in the presence of magnetic field.

Majorana–Kondo interplay in a Majorana wire-quantum dot system with ferromagnetic contacts* *Project supported by the Science Foundation of Civil Aviation Flight University of China (Grant No. JG2019-19).

We consider a single-level quantum dot (QD) and a topological superconducting wire hosting Majorana bound states at its ends. By the equation of motion method, we give the analytical Green's function of the QD in the noninteracting and the infinite interacting case. We study the effects of QD energy level and the spin polarization on the density of states (DOS) and linear conductance of the system. In the noninteracting case, the DOS resonance shifts with the change of energy level and it shows bimodal structure at large spin polarization strength. In the infinite interacting case, the up-spin linear conductance first increases and then decreases with the increase of spin polarization strength, but the down-spin is stable. However, the DOS shows a splitting phenomenon in the large energy level with the increase of spin polarization strength. This provides an interesting way to explore the physical properties of such spin dependent effect in the hybrid Majorana QD systems.

Energy levels of magnetic quantum dots in gapped graphene

We study the energy levels of charge carriers confined in a magnetic quantum dot in graphene surrounded by a infinite graphene sheet in the presence of energy gap. We explicitly determine the eigenspinors for both valleys K and $$K'$$ , whereas we use the boundary condition at interface of the quantum dot to obtain the energy levels. We numerically investigate our results and show that the energy levels exhibit the symmetric and antisymmetric behaviors under suitable conditions of the physical parameters. We find that the radial probability can be symmetric or antisymmeric according to the angular momentum is null or no-null. Finally, we show that the application of an energy gap decreases the electron density in the quantum dot, which indicates a temporary trapping of electrons.

Термоавтоэлектронная эмиссия из квантовых точек антимонида индия

The paper identifies and analyzes the features of the mechanism of field emission in the tunneling microscope probe – indium antimonide quantum dot system in the temperature range of 23—150 °C. The analysis of the tunneling CVCs made it possible to conclude that there are different mechanisms of electron transfer from the metal probe of the tunneling microscope and the field emission of electrons through discrete energy levels of the indium antimonide quantum dot at different temperatures.

A highly tunable quadruple quantum dot in a narrow bandgap semiconductor InAs nanowire.

Quantum dots (QDs) made from semiconductors are among the most promising platforms for the development of quantum computing and simulation chips, and they have the advantages of high density integration and compatibility with the standard semiconductor chip fabrication technology compared to other platforms. However, the development of a highly tunable semiconductor multiple QD system still remains a major challenge. Here, we demonstrate the realization of a highly tunable linear quadruple QD (QQD) in a narrow bandgap semiconductor InAs nanowire via a fine finger gate technique. The QQD is studied by electron transport measurements in the linear response regime. Characteristic two-dimensional charge stability diagrams containing four groups of resonant current lines of different slopes are obtained for the QQD. It is shown that these current lines arise from and can be individually assigned to resonant electron transport through the energy levels of different QDs. Benefitting from the excellent gate tunability, we also demonstrate the tuning of the QQD to regimes where the energy levels of two QDs, three QDs and all four QDs are energetically in resonance, respectively, with the Fermi level of the source and drain contacts. A capacitance network model is developed for the linear QQD and the simulated charge stability diagrams based on this model show good agreement with the experiments. Our work provides solid experimental evidence that narrow bandgap semiconductor nanowire multiple QDs could be used as a versatile platform to achieve integrated qubits for quantum computing and to perform quantum simulations of complex many-body systems.