In this study, SnO2:F-rGO thin films were prepared by spray pyrolysis method on glass substrates. The effect of rGO and chemical reduction with Hydrazine on the structural, electrical, and optical properties of FTO:rGO thin films has been investigated. To deposition FTO: rGO thin films, different atomic ratios of fluorine to tin were changed as [F/Sn] = 0, 0.25, 0.5, 0.7 and 1 with a constant value of reduced graphene oxide (rGO). The X-ray diffraction study showed that all FTO: rGO thin films have a polycrystalline structure with tetragonal crystal structure and were preferably oriented in (200) direction. FE-SEM images showed that hydrazine as a reduction agent increased grain size and decreased porosity of FTO: rGO samples. The results of electrical measurements of thin films showed that the minimum sheet resistance equal to 118 Ω/□ was obtained for FTO: rGO with [F/Sn] = 0.5 thin films. The Hall Effect test showed the conductivity of all samples to be n-type and the carrier concentration was obtained from the order of 1021 cm−3. Also, the values of dislocation density and, micro-strain of FTO: rGO thin films were calculated. Finally, the results of UV–Vis spectroscopy showed that the energy gap of thin films varies in the range of 3.10–3.64 eV.