Abstract
A thin films of CuO and CuO:Al as well as p-CuO:Al/n-Si heterojunction with different Al ratios (0,1,2,3)%wt has been successfully fabricated by thermal oxidation with exist oxygen. The energy gap for thin films was calculated from optical properties. The capacitance was calculated as a function of voltage at reverse bias, and it demonstrate that these heterojunctions are abrupt. The capacitance values decreases with increasing the reverse bias while it increases with increasing Al ratio. The results indicated that the width of depletion layers and highest built in potential values decreases as Al concentration increases. The difference between reverse and forward current with applied voltage confirm for p -Cu O /n-Si and p -CuO:Al/n-Si that the heterojunction have a high rectification characteristic.
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