Abstract
The purpose of the present research is to observe the energy gap of thin films made from LiTaO3 in 1 M-solubility deposited on n-type Si (111) substrates with annealing temperature variation. The manufacture of thin films has been formed by Chemical Solution Deposition (CSD) method using spin coater on 3000 rpm speed for 30 seconds and performed annealing process using furnace (Nabertherm type B180) at a temperature of 750°C, 800°C and 850°C for 15 hours. The absorbance of thin films is measured by using an Ocean Optics USB2000 device and processed into the energy gap curve using Tauc Plot method. The result shows that the energy gap of thin films associated with indirect transitions are increased from 2.78 eV to 2.93 eV with the rise of annealing temperature. The research shows that the thin films on n-type Si (111) substrates made of LiTaO3 produces sensitivity to violet light spectrum and have the potential to be developed as a sensor on satellite technology.
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