Emissive Layer Research Articles

Interacting Emission Species among Donor and Acceptor Moieties in a Donor-Grafted Polymer Host/TADF-Guest System and Their Effects on Photoluminescence and Electroluminescence.

Thermally activated delayed fluorescence (TADF)-based electroluminescence (EL) devices adopting a host/guest strategy in their emitting layer (EML) are capable of realizing high efficiency. However, TADF emitters composed of donor and acceptor moieties as guests dispersed in organic host materials containing a donor and/or an acceptor are subject to donor-acceptor (D-A) interactions. In addition, electron delocalization between neighboring emitter molecules could form different species of aggregates. Here, we investigate the effects of intermolecular interacting emission species on the optoelectronic properties of sky-blue/green/red (sB/G/R) TADF emitters as guests using poly(biphenyl-Si/Ge) grafted with various donor moieties as hosts. We found the presence of guest/guest exciplex (Dg/Ag)*, host/guest exciplexes (Dh/Ag)*, and aggregates through the exploration of interactions between neighboring TADF guest molecules and between host and TADF-guest molecules. The nonradiative 3(Dh/Ag)* (ΔEST ≈ 0.5 eV) could increase the internal conversion rate (kIC) and reduce delayed luminescence, and both of them could cause a decrease in PLQY. The luminescence of 3(Dh/Ag)* may have a positive or negative effect on PLQY depending on its triplet energy. As the singlet and triplet energies of (aggregate)* are lower than those of (ICT)*, energy transfer from (ICT)* to (aggregate)* could occur. The low PLQY nature of (aggregate)* means that it is more likely to cause quenching in device emission. The emissions from (Dh/Ag)* and (aggregate)* are found to have increased full width at half-maximum and lead to lower emission color purity. Such intermolecular interactions should also occur in host/guest (TADF) systems and nondoped TADF emitter systems and thus are important factors for the molecular design of the TADF emitter and/or its accompanying host for high device efficiency and emission color purity.

Degradation of crystalline silicon solar cells caused by lightning induced impulse surge

Abstract Crystalline silicon (c-Si) solar cells are connected in series to form photovoltaic modules, which are installed in wide-open areas. They are exposed to lightning electromagnetic (EM) interference at high risk. The lightning EM field can induce an impulse surge in the loop of the solar-cell string, and c-Si solar cells are prone to damage. To study the effect of lightning surge on monocrystalline silicon cells and polycrystalline silicon cells, impulse voltage tests are conducted. Semiconductor structures of c-Si solar cells after testing are observed using scanning electron microscopy. The results indicate that the lightning surge will generate some cracks and defects in the P–N junction. Under a strong electric field, the N-type emitter layer and the grain boundary can be destroyed, which contributes to the degradation of the c-Si solar cell. Compared to monocrystalline silicon cells, polycrystalline silicon cells can withstand greater forward lightning surge; however, their maximum reverse lightning surge is relatively low.

High‐Efficiency Deep‐Blue Solution‐Processed Organic Light‐Emitting Diodes Using Carbazole Dendrons Modified Hybridized Local and Charge‐Transfer Emitters

In the pursuit of efficient and cost‐effective organic light‐emitting diodes (OLEDs), the development of solution‐processed hybridized local and charge transfer (HLCT) emitters presents a promising approach. HLCT materials uniquely integrate the advantages of both singlet and triplet excitons, surpassing the traditional spin statistical limit of 25% while offering high photoluminescence efficiency and balanced charge transport properties. Herein, we report the synthesis and characterization of two new deep blue, solution‐processable HLCT fluorophores, G1FTPI and G2FTPI. These compounds incorporate fluorenyl carbazole dendron units into the HLCT luminogenic triphenylamine‐phenanthroimidazole (TPI) molecule. Their HLCT and photoluminescence (PL) properties were experimentally and theoretically investigated using solvation effects and density functional theory (DFT) calculations. The molecules exhibit deep blue emission with a high solid‐state fluorescence quantum yield, good solution‐processed film‐forming quality, and high hole mobility values of 2.18 – 2.61 × 10‐6 cm2 V‐1s‐1. Both compounds were successfully employed as non‐doped emissive layers in solution‐processed OLEDs, demonstrating excellent electroluminescent (EL) performance. Notably, the G2FTPI‐based device emitted a deep blue light at 432 nm with CIE coordinates of (0.158, 0.098) and achieved a a maximum current efficiency (CEmax) of 3.13 cd A‐1 and a maximum external quantum efficiency (EQEmax) of 5.30%.

Phosphorescent cyclometalated Ir(III) complexes with fluoranthene unit and their near-infrared (NIR) OLEDs showing NIR% higher than 99 %

With the aim to design and synthesize cyclometalated Ir(III) complexes with near-infrared (NIR) emission, a series of ppy-type ligands with fluoranthene unit have been synthesized bearing different aromatic nitrogen heterocycles of isoquinoline, quinoline, pyridine and benzo [d]thiazole. With these organic ligands, four [Ir (ppy)2 (acac)] complexes are prepared named as IrFTIQ, IrFTQL, IrFTPY and IrFTBZ. In solution, IrFTIQ can emit NIR phosphorescence at 738 nm, while IrFTQL (ca. 692 nm), IrFTPY (ca. 670 nm) and IrFTBZ (ca. 690 nm) are typical deep-red emitters. It should be noted that all these fluoranthene-based cyclometalated Ir(III) complexes show good electrochemical stability indicated by their reversible redox procedures. When doped in the emission layer of OLEDs, IrFTIQ and IrFTBZ can furnish NIR electroluminescence (EL) at 748 nm and 700 nm, respectively, while the devices with IrFTPY as emitter can furnish deep-red EL. Critically, the optimized OLED doped with IrFTIQ can achieve maximum external quantum efficiency (EQE) as high as 5.01 % and a radiance up to 6284 mW Sr−1 m−2. Critically, the NIR OLEDs based on IrFTIQ can furnish EL with NIR component (NIR%) of a total spectrum > 99 %. All these encouraging results definitely demonstrate the effectiveness of our molecular design strategy for the new-type Ir(III) NIR phosphorescent complexes and the great potential of the fluoranthene group in developing high-performance Ir-based NIR phosphors for OLEDs.

Efficient Perovskite Light Emitting Diodes Enabled by Mixed Ruddlesden–Popper (RP) Perovskite–Perovskite Planar Heterojunction between Hole Transport and Emission Layers

Efficient Perovskite Light Emitting Diodes Enabled by Mixed Ruddlesden–Popper (RP) Perovskite–Perovskite Planar Heterojunction between Hole Transport and Emission Layers

Controlling Polarization‐Induced Polaron Accumulation in OLEDs via Device Design

AbstractSpontaneous alignment of molecular electric dipole moments, known as spontaneous orientation polarization (SOP), is present in many organic electronic materials. The SOP‐induced field changes the internal voltage distribution within the device, altering polaron injection and accumulation. The important role of SOP in organic light‐emitting devices (OLEDs) has recently been emphasized with clear links between dipole alignment and device efficiency and operational lifetime. Prior work has thus sought to engineer SOP via changes in thin film composition or processing conditions. These efforts have generally been directed at the OLED electron transport layer, which can show strong SOP. This work takes a different approach, focusing instead on how changes in device architecture can be applied to tune the magnitude and dynamics of polaron accumulation in response to SOP. In this work, it is demonstrated that the introduction of SOP into the device emissive layer offers control over the spatial location of accumulation. In parallel, insertion of a spacer layer between the hole transport and emissive layers can be used to tune the polaron accumulation rate and density during device operation. Both of these architectural changes permit an increase in OLED efficiency and a pathway around the deleterious impact of SOP‐induced polaron accumulation.

Modeling the Electrical Stabilities of Organic Light‐Emitting Diodes

The ratio (R) of the molecular density of emissive layer to the carrier density in exciton formation zone has been provided to weigh the electrical stability of organic light‐emitting diode and simulated via the general mode of carrier device lifetimes. With current density increasing from 1 to 500 mA cm−2, the molecular density of emissive layer enabling the largest R, that is, the best electrical stability of device, gradually increases from 7.5 × 1019 to 1.5 × 1021 cm−3. At a given current density, R increases with the average bandgap of emissive layer increasing. There is a power law dependence of R on current density. For host–guest emissive layer, the electrical stability of device decreases with guest concentration increasing, mostly because the average bandgap of the host–guest emissive layer decreases. The current research provides some deep insights into developing the emissive layers of organic light‐emitting diodes toward high luminance applications.

Improved Charge Recombination Efficiency in Organic Light‐Emitting Transistors via Luminescent Radicals

AbstractLuminescent radicals are attracting attention as emitters in electroluminescent devices thanks to the exploitation of doublet excitons. Recent studies reveal that exciton formation in radical organic light‐emitting diodes (OLEDs) primarily occurs through a charge trapping mechanism. Although typically detrimental for OLEDs, this might be a key process to elucidate light emission in organic light‐emitting transistors (OLETs). Here, a unipolar n‐type architecture suitable for the implementation of radical emitters is introduced, designed based on computational calculations. The operation of the as‐realized devices incorporating the newly synthesized [2,6‐dichloro‐4‐(2,6‐dimethoxyphenyl)phenyl](3,5‐dichloro‐4‐pyridyl) (2,4,6‐trichlorophenyl)methyl radical is investigated via transient electroluminescence measurements to demonstrate the occurrence of long‐living emission ascribed to the charge trapping mechanisms. Moreover, a comprehensive understanding of the processes governing radical‐OLET is obtained by recording complete 2D maps of both optical and electrical response of the device as a function of applied voltages. Notably, the trapping of electrons by radical moieties is demonstrated to generate a negative charge density in the emissive layer that facilitates holes to be injected: increasing the balance of opposite charge carriers, a tenfold enhancement of the external quantum efficiency (EQE) at the proper source‐drain and source‐gate voltage conditions is reported to reach a maximum EQE value of 0.2%.

Optical, Photophysical, and Electroemission Characterization of Blue Emissive Polymers as Active Layer for OLEDs.

Polymers containing π-conjugated segments are a diverse group of large molecules with semiconducting and emissive properties, with strong potential for use as active layers in Organic Light-Emitting Diodes (OLEDs). Stable blue-emitting materials, which are utilized as emissive layers in solution-processed OLED devices, are essential for their commercialization. Achieving balanced charge injection is challenging due to the wide bandgap between the HOMO and LUMO energy levels. This study examines the optical and photophysical characteristics of blue-emitting polymers to contribute to the understanding of the fundamental mechanisms of color purity and its stability during the operation of OLED devices. The investigated materials are a novel synthesized lab scale polymer, namely poly[(2,7-di(p-acetoxystyryl)-9-(2-ethylhexyl)-9H-carbazole-4,4'-diphenylsulfone)-co-poly(2,6-diphenylpyrydine-4,4'-diphenylsulfone] (CzCop), as well as three commercially supplied materials, namely Poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO), poly[9,9-bis(2'-ethylhexyl) fluorene-2,7-diyl] (PBEHF), and poly (9,9-n-dihexyl-2,7-fluorene-alt-9-phenyl-3,6-carbazole) (F6PC). The materials were compared to evaluate their properties using Spectroscopic Ellipsometry, Photoluminescence, and Atomic Force Microscopy (AFM). Additionally, the electrical characteristics of the OLED devices were investigated, as well as the stability of the electroluminescence emission spectrum during the device's operation. Finally, the determined optical properties, combined with their photo- and electro-emission characteristics, provided significant insights into the color stability and selectivity of each material.

Coherence Programming for Efficient Linearly Polarized Perovskite Light-Emitting Diodes.

Although quasi-two-dimensional (quasi-2D) perovskites are ideal material platforms for highly efficient linearly polarized electroluminescence owing to their anisotropic crystal structures, so far, there has been no practical implementation of these materials for the demonstration of linearly polarized perovskite light-emitting diodes (LP-PeLEDs). This scarcity is due to difficulty in orientation and phase distribution control of the quasi-2D perovskites while minimizing the defects, all of which are required to manifest aligned transition dipole moments (TDMs). To achieve this multifaceted goal, herein, we introduce a synergistic strategy to quasi-2D perovskites by incorporating both a trimethylolpropane triacrylate anchoring layer and 18-Crown-6 molecular passivator into the film fabrication process. It is found that the interfacial anchoring layer guides the oriented growth of perovskites along the (110) plane, whereas the molecular passivator reduces the number of defects and homogenizes the crystal phase. As a result, a quasi-2D perovskite film with macroscopically aligned TDM that renders high radiative recombination and the degree of linear polarization (DoLP) is constructed. This "coherence-programmed emission layer" demonstrates highly efficient LP-PeLEDs, not only achieving a maximum external quantum efficiency of ∼23.7%, a brightness of ∼36,142 cd/m2, and a DoLP of ∼38%, but also significantly improving the signal-to-interference-and-noise ratio in a multi-cell visible light communication system.

The Influence of Thickness and Spectral Properties of Green Color-Emitting Polymer Thin Films on Their Implementation in Wearable PLED Applications.

A systematic investigation of optical, electrochemical, photophysical, and electrooptical properties of printable green color-emitting polymer (poly(9,9-dioctylfluorene-alt-bithiophene)) (F8T2) and spiro-copolymer (SPG-01T) was conducted to explore their potentiality as an emissive layer for wearable polymer light-emitting diode (PLED) applications. We compared the two photoactive polymers in terms of their spectral characteristics and color purity, as these are the most critical factors for wearable lighting sources and optical sensors. Low-cost, solution-based methods and facile architecture were applied to produce rigid and flexible light-emitting devices with high luminance efficiencies. Emission bandwidths, color coordinates, operational characteristics, and luminance were also derived to evaluate the device's stability. The tuning of emission's spectral features by layer thickness variation was realized and was correlated with the interplay between H-aggregates and J-aggregates formations for both conjugated polymers. Finally, we applied the functional green light-emitting PLED devices based on the two studied materials for the detection of Rhodamine 6G. It was determined that the optical detection of the R6G photoluminescence is heavily influenced by the emission spectrum characteristics of the PLED and changes in the thickness of the active layer.

Mg2+‐Doped Cesium Copper Halide for Bright Electroluminescent White Light‐Emitting Diodes

AbstractLead‐based perovskite nanocrystals (NCs) as one of the most promising materials in the fields of display and lighting, have outstanding optical performance and simple solution preparation process. However, the toxicity of lead and poor stability limit their commercialization. Meanwhile, as a key component of display and lighting, white light‐emitting diodes (WLEDs) still faces challenges such as low luminance and complex preparation process. A method is proposed for preparing nontoxic and stable Cs3Cu2I5 NCs by doping Mg2+ ions, achieved broadband blue light emission with a high PLQY of 96.2% and excellent thermal cycling stability and air stability. Then, the Mg2+ ions doped Cs3Cu2I5 NCs are used as emissive layer, while the 1,3,5‐Tri (m‐pyridine‐3‐ylphenyl) benzene (TmPyPb) is selected as electron transport layer to interact with Cs3Cu2I5 thin films for the formation of Cu‐I complex with broadband yellow light emission. This approach obviated the need for multi‐layer sedimentary emission layers, resulting in WLEDs featuring a high color rendering index (CRI) of 91, a peak external quantum efficiency (EQE) of 0.71% and maximum luminance of 2116 cd m−2 that is the highest values of lead‐free perovskite WLEDs at present. Therefore, Cs3Cu2I5 NCs have good application prospects in WLEDs.

Enhanced Fluorescence in Green ZnSeTe Quantum Dots Using Gradient Layer Technique

AbstractA novel method is presented for synthesizing green ZnSeTe quantum dots (QDs) that demonstrate high photoluminescence quantum yield (PLQY) and a narrow full width at half maximum (FWHM). In this synthesis, a gradient layer is created between the ZnSeTe core and the ZnSe inner shell by utilizing the different reactivities of precursors. This innovative approach aims to reduce lattice mismatch and minimize interfacial defects, thereby enhancing the fluorescence properties of ZnSeTe QDs. Using the gradient layer, green QDs are achieved with a FWHM of 36 nm and a PLQY of 90%, surpassing previous results. Detailed structural analyses confirmed a reduction in stacking faults and strain in the QDs with a gradient layer, leading to enhanced fluorescence properties. The QDs with a gradient layer are successfully integrated into the emissive layer of a quantum dot light–emitting diode device, demonstrating superior performance compared to QDs without the gradient layer.

Different built-in electric fields for transmission-mode GaAs photocathodes through doping engineering: Design and modeling

In order to enhance the emission performance of transmission-mode GaAs photocathodes used in optoelectronic field, different exponential doping structures are designed for the GaAs emission layer to generate different types of built-in electric fields. These built-in electric fields include the constant, increasing and decreasing types, which can help photoelectron transport toward the emission surface. By solving the one-dimensional continuity equation using the finite difference method, the electron concentration distribution and quantum efficiency of the three types of exponential doping GaAs photocathodes are derived. Meanwhile, the light absorption distributions in the emission layer are simulated by the finite difference time domain method. By comparing the optical absorption distribution and the electron concentration distribution, it is concluded that, among the three types of exponential doping structures, the exponential doping structure generating the increasing built-in electric field has the most sufficient long-wave light absorption capacity and the strongest photoelectron transport ability, thereby achieving the highest quantum efficiency. This theoretical work can help understand the mechanism of improving the photoemission performance of GaAs photocathodes through doping engineering.

Inflated electronic and optical assessment of gC3N4/ZnO nanocomposite as a potential emissive layer material for OLED application

Organo-inorganic nanocomposite materials have been proven to be novel hybrid materials with inflated electronic and optical performance that can be tailored with the judicious selection of the building units or their combinations. Here, hydrothermal, thermal polycondensation, and ultrasonication techniques were used to synthesize pure ZnO, gC3N4, and gC3N4/ZnO with varying weights % such as 10%, 15%, 20%, and 25% of ZnO inorganic filler elements in gC3N4 matrix. The crystalline phase (hexagonal wurtzite) and crystallite size (10.0 nm, 17.6 nm, and 15.90 nm) of the synthesized materials were examined by X-ray diffractometer. The FESEM and HRTEM characterizations revealed the sheet-like gC3N4 and spherical-type ZnO nanoparticle-like microstructures of the samples. The present functional groups, corresponding vibrational frequency, chemical states, and binding energy were investigated using FTIR and XPS spectroscopic methods. Optical parameters such as optical band gap energy (Eg = 3.24 eV), Urbach energy (Eu = 0.41 eV), refractive index (n= 1.99), emission quantum yield (∼ 69.03%), and color purity of the nanocomposites were examined using UV visible and photoluminescence spectroscopic techniques. IV and Hall measurements techniques were used to determine the semiconducting parameters of the optimized sample, such as conductivity (∼62.90×10−5 S/cm), carrier mobility (∼ 44.1 cm2/Volt. Sce), carrier concentrations (∼1.825×1014 cm−3), and sheet resistance (∼1.062×103 Ω/cm2). Due to their excellent optical and electrical behavior, the nanocomposite materials were found to be fairly suitable as a potential emissive layer material for OLED applications.

Body-worn and self-powered flexible optoelectronic device for metronomic photodynamic therapy

Photodynamic therapy (PDT) as a clinical method relies on appropriate light delivery to activate photosensitizers, usually necessitates the utilization of cumbersome surgical instruments and high irradiation intensity, along with the requirement for hospitalization. To extend the applicability of PDT beyond hospital for better patient mobility, we design a wearable and self-powered metronomic PDT (mPDT) system for chronic wound infection treatment. A flexible alternative current electroluminescent (ACEL) device is constructed through sandwiching an emissive layer between conductive hydrogel electrodes. This ACEL device works as a therapeutic patch by loading photosensitizer (PS) in its bottom hydrogel electrode, thus aviods the intravenous administration to patients. Under the triboelectric nanogenerator generated AC pulse, the electroluminescence produced from emissive layer can be absorbed by the PS-loaded electrode to generate reactive oxygen species for mPDT. Benefited from its arbitrary tailorability, this device can be customized into on-demand shapes and sizes. Using diabetic infected wound as a model condition, this ACEL mPDT device effectively eliminates drug-resistant bacteria and accelerates wound healing. Thus, the body-worn optoelectronic device successfully avoids the utilization of extracorporeal physical light and power sources, providing a promising strategy for convenient, user-friendly, and prolonged treatment of superficial diseases.

Advancing the Coupling of III–V Quantum Dots to Photonic Structures to Shape Their Emission Diagram

AbstractThe development of optoelectronic devices based on III–V semiconductor colloidal quantum dots (CQDs) is highly sought after due to their reduced toxicity. While devices based on conventional CQDs (II–VI semiconductors, halide perovskites) have achieved impressive technological leaps since their discovery, the most mature of these compounds contain toxic heavy metal elements (Cd, Hg, or Pb), which are highly undesirable for safe industrial scale applications. The strong covalent bonds of III–V compounds like InP, InAs, or InSb prevent the release of their toxic atoms, making them safer. However, these same bonds create severe material constraints. Namely, their harsher reaction conditions and increased sensitivity to oxidation have kept most of the research focused on material development. Meanwhile, their integration into devices and their coupling to photonic structures lag behind. Here, the integration of InAs/ZnSe core‐shell CQDs is advanced. First, the material parameters necessary to design plasmonic gratings coupled to the CQDs are elucidated and those gratings are fabricated. Angle‐resolved spectroscopy shows that the plasmon modes successfully couple to the CQD layer's emission leading to a tunable directivity with a 15° linewidth. A 3‐fold increase of the PL signal is achieved at normal incidence, thus advancing toward the goal of efficient outcoupling in LEDs.

High-Performance Red Transparent Quantum Dot Light-Emitting Diodes via Fully Solution-Processed MXene/Ag NWs Top Electrode.

The integration of high-performance transparent top electrodes with the functional layers of transparent quantum dot light-emitting diodes (T-QLEDs) poses a notable challenge. This study presents a composite transparent top electrode composed of MXene and Ag NWs. The composite electrode demonstrates exceptional transparency (84.6% at 620 nm) and low sheet resistance (16.07 Ω sq-1), rendering it suitable for integration into T-QLEDs. The inclusion of MXene nanosheets in the composite electrode serves a dual role: adjusting the work function to enhance electron injection efficiency and enhancing the interface between Ag NWs and the emissive layer, thereby mitigating the common issue of interfacial resistance in conventional transparent electrodes. This strategic amalgamation results in notable improvements in device performance, yielding a maximum current efficiency of 23.12 cd A-1, an external quantum efficiency of 13.98%, and a brightness of 21,015 cd m-2. These performance metrics surpass those achieved by T-LEDs employing pristine Ag NW electrodes. This study offers valuable insights into T-QLED device advancement and provides a promising approach for transparent electrode fabrication in optoelectronic applications.

Electroluminescent and photoluminescent light-emitting diodes from carbon dots and device architecture optimization.

Light emission from carbon dots (CDs) is of great interest in both electroluminescence and photoluminescence. Herein, we construct electroluminescent and photoluminescent light-emitting diodes (LEDs) from emitters of CDs. The electroluminescent LED with host-guest-doped dual emissive layers (EMLs) of [poly(9-vinylcarbazole) (PVK)-CDs] × 2 gives satisfactory electro-optical properties, with maximum luminance of 560 cd m-2 at 16 V, luminous efficiency of 0.183 cd A-1, power efficiency of 0.082 lm W-1, and external quantum efficiency of 0.25%, which are superior to the counterparts with single-EML of CDs, single-EML of [PVK-CDs], and triple-EMLs of [PVK-CDs] × 3. These enhanced properties are rationally ascribed to optimization of the device architecture, carrier balance improvement, and reduction in concentration-induced quenching. The electroluminescent LEDs also show color evolution from PVK to CDs, and/or to the PVK/CDs interface, with increasing driving voltages, owing to incomplete energy transfer from PVK to CDs. Highly efficient photoluminescent LEDs with 365- and 395-nm UV excitation are demonstrated. With a CDs : polyvinyl pyrrolidone ratio of 1 : 3, the 365-nm excited photoluminescent LED gives a maximum luminance of 512 347 cd m-2 with a power efficiency of 25.2 lm W-1, while the 395-nm excited photoluminescent device gives a maximum luminance of 670 954 cd m-2 with a power efficiency of 22.0 lm W-1, with both showing yellow emission. Our experiments provide some new ideas for broadening CD applications and advancing LEDs.

Organic Light-Emitting Diodes Comprising an Undoped Thermally Activated Delayed Fluorescence Emissive Layer and a Thick Inorganic Perovskite Hole Transport Layer

Organic Light-Emitting Diodes Comprising an Undoped Thermally Activated Delayed Fluorescence Emissive Layer and a Thick Inorganic Perovskite Hole Transport Layer