Abstract
AbstractA novel method is presented for synthesizing green ZnSeTe quantum dots (QDs) that demonstrate high photoluminescence quantum yield (PLQY) and a narrow full width at half maximum (FWHM). In this synthesis, a gradient layer is created between the ZnSeTe core and the ZnSe inner shell by utilizing the different reactivities of precursors. This innovative approach aims to reduce lattice mismatch and minimize interfacial defects, thereby enhancing the fluorescence properties of ZnSeTe QDs. Using the gradient layer, green QDs are achieved with a FWHM of 36 nm and a PLQY of 90%, surpassing previous results. Detailed structural analyses confirmed a reduction in stacking faults and strain in the QDs with a gradient layer, leading to enhanced fluorescence properties. The QDs with a gradient layer are successfully integrated into the emissive layer of a quantum dot light–emitting diode device, demonstrating superior performance compared to QDs without the gradient layer.
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