Phonon Emission Research Articles

Non-equilibrium quasiparticles in superconducting circuits: photons vs. phonons

We study the effect of non-equilibrium quasiparticles on the operation of a superconducting device (a qubit or a resonator), including heating of the quasiparticles by the device operation. Focusing on the competition between heating via low-frequency photon absorption and cooling via photon and phonon emission, we obtain a remarkably simple non-thermal stationary solution of the kinetic equation for the quasiparticle distribution function. We estimate the influence of quasiparticles on relaxation and excitation rates for transmon qubits, and relate our findings to recent experiments.

Energy relaxation in hot electron quantum optics via acoustic and optical phonon emission

We study theoretically the relaxation of hot quantum-Hall edge-channel electrons under the emission of both acoustic and optical phonons. Aiming to model recent experiments with single-electron sources, we describe simulations that provide the distribution of electron energies and arrival times at a detector a fixed distance from the source. From these simulations we extract an effective rate of emission of optical phonons that contains contributions from both a direct emission process as well as one involving inter-edge-channel transitions that are driven by the sequential emission of first an acoustic -- and then an optical -- phonon. Furthermore, we consider the mean energy loss due to acoustic phonon emission and resultant broadening of the electron energy distribution and derive an effective drift-diffusion model for this process.

Dynamics of infrared excitations in boron doped diamond

We report on the investigation of relaxation dynamics of optical excitations in IIb high pressure high temperature (HPHT) diamond doped by natural boron and isotopically enriched 11boron. The measurements were performed with a pump-probe technique using short pump pulses from a wavelength-tunable infrared free electron laser. Lifetimes of excited boron states ranging from a few picoseconds to a few hundred picoseconds, have been derived from the obtained data. The relaxation rates depend on the pumped states, the pump intensity and the diamond lattice temperature. We discuss possible contributions to the optical and nonradiative intracenter relaxation rates observed in these experiments. Theoretical simulations support ultrafast relaxation by multiple phonon emission, for the electronic states with the energy gap exceeding the energy of optical phonon.

Negative and positive terahertz and infrared photoconductivity in uncooled graphene

We develop the model for the terahertz (THz) and infrared (IR) photoconductivity of graphene layers (GLs) at room temperature. The model accounts for the linear GL energy spectrum and the features of the energy relaxation and generation-recombination mechanisms inherent at room temperature, namely, the optical phonon absorption and emission and the Auger interband processes. Using the developed model, we calculate the spectral dependences of the THz and IR photoconductivity of the GLs. We show that the GL photoconductivity can change sign depending on the photon frequency, the GL doping and the dominant mechanism of the carrier momentum relaxation. We also evaluate the responsivity of the THz and IR photodetectors using the GL photoconductivity. The obtained results along with the relevant experimental data might reveal the microscopic processes in GLs, and the developed model could be used for the optimization of the GL-based photodetectors.

Energy relaxation of hot carriers near the charge neutrality point in HgTe-based 2D topological insulators

We present experimental results of non-linear transport in HgTe-based 2D topological insulators, where the conductance is dominated by Dirac-like helical edge states when the Fermi level is pinned to the bulk insulating gap. We find that hot carrier's energy relaxation is faster close to the charge neutrality point (CNP) which can be attributed to localized nature and incompressibility of charge puddles resulting from inhomogeneous charge distribution near CNP. The tunnel-coupling of these puddles (quantum dots) to 1D edge channels can randomize phase memory leading to incoherent inelastic processes. Hot edge carriers, excited by the electric field, relax to equilibrium via thermalization in multiple puddles resulting in the emission of phonons in the puddles. At relatively low temperature (T ≤ 10 K), the energy relaxation time shows strong temperature dependence (τε ∝ (Te−5)), which is interpreted as small angle scattering, consistent with resistance saturation at low temperatures.

Coherent photo-induced phonon emission in the charge-density-wave state of K0.3MoO3

We report on the observation of coherent terahertz (THz) emission from the quasi-one-dimensional charge-density wave (CDW) system, blue bronze (K0.3MoO3), upon photo-excitation with ultrashort near-infrared optical pulses. The emission contains a broadband, low-frequency component due to the photo-Dember effect, which is present over the whole temperature range studied (30–300 K), as well as a narrow-band doublet centered at 1.5 THz, which is only observed in the CDW state and results from the generation of coherent transverse-optical phonons polarized perpendicular to the incommensurate CDW b-axis. As K0.3MoO3 is centrosymmetric, the lowest-order generation mechanism which can account for the polarization dependence of the phonon emission involves either a static surface field or quadrupolar terms due to the optical field gradients at the surface. This phonon signature is also present in the ground-state conductivity, and decays in strength with increasing temperature to vanish above , i.e. significantly below the CDW transition temperature. The temporal behavior of the phonon emission can be well described by a simple model with two coupled modes, which initially oscillate with opposite polarity.

Terahertz driven amplification of coherent optical phonons in GaAs coupled to metallic dog-bone resonators

Two-dimensional terahertz spectroscopy on an AlAs/GaAs nanostructure covered by field-enhancing dog-bone resonators shows signatures of coherent optical phonon amplification. Amplification is due to stimulated phonon emission by a terahertz-driven electron current.

Cyclotron and combined phonon-assisted resonances in the double-well heterostructure In0.65Ga0.35As/In0.52Al0.48As at megagauss magnetic fields

Experiments on resonances of conduction electrons in InGaAs/InAlAs double quantum wells at megagauss magnetic fields in the Faraday geometry are reported. We observe new cyclotron resonances assisted by emission of InAs-like and GaAs-like optic phonons and a combined (cyclotron-spin) resonance assisted by emission of InAs-like phonon. The observations are very well described for three laser frequencies with the use of an eight-band (three level) $\textbf{k}\cdot \textbf{p}$ model, taking into account position- and energy-dependent effective masses and spin g-factors. It is indicated that the new observations are possible due to the application very high magnetic fields.

Model To Determine a Distinct Rate Constant for Carrier Multiplication from Experiments.

Carrier multiplication (CM) is the process in which multiple electron–hole pairs are created upon absorption of a single photon in a semiconductor. CM by an initially hot charge carrier occurs in competition with cooling by phonon emission, with the respective rates determining the CM efficiency. Up until now, CM rates have only been calculated theoretically. We show for the first time how to extract a distinct CM rate constant from experimental data of the relaxation time of hot charge carriers and the yield of CM. We illustrate this method for PbSe quantum dots. Additionally, we provide a simplified method using an estimated energy loss rate to estimate the CM rate constant just above the onset of CM, when detailed experimental data of the relaxation time is missing.

Exact Solution, Endoreversible Thermodynamics, and Kinetics of the Generalized Shockley-Queisser Model

We derive exact analytical solution of the Shockley-Queisser (SQ) model and present all photovoltaic (PV) characteristics in compact and convenient form via the Lambert W function. We show that the SQ condition of chemical of equilibrium between photocarriers and emitted phonons leads to a new thermodynamic relation between the maximal conversion efficiency and the photo-induced chemical potential. Also, we consider kinetics of PV conversion and establish relation between the photocarrier collection time and photocarrier lifetime. We consider photonic and electronic requirements for approaching of SQ limit in semiconductor PV devices and highlight a role of photon reabsorption.

Optical modulation of coherent phonon emission in optomechanical cavities

Optomechanical structures are well suited to study photon-phonon interactions, and they also turn out to be potential building blocks for phononic circuits and quantum computing. In phononic circuits, in which information is carried and processed by phonons, optomechanical structures could be used as interfaces to photons and electrons thanks to their excellent coupling efficiency. Among the components required for phononic circuits, such structures could be used to create coherent phonon sources and detectors. Complex functions other than emission or detection remain challenging and addressing a single structure in a full network proves a formidable challenge. Here, we propose and demonstrate a way to modulate the coherent emission from optomechanical crystals by external optical pumping, effectively creating a phonon switch working at ambient conditions of pressure and temperature and the working speed of which (5 MHz) is only limited by the mechanical motion of the optomechanical structure. We additionally demonstrate two other switching schemes: harmonic switching in which the mechanical mode remains active but different harmonics of the optical force are used, and switching to- and from the chaotic regime. Furthermore, the method presented here allows to select any single structure without affecting its surroundings, which is an important step towards freely controllable networks of optomechanical phonon emitters.

Spatial control of carrier capture in two-dimensional materials: Beyond energy selection rules

Transition metal dichalcogenide monolayers have attracted wide attention due to their remarkable optical, electronic and mechanical properties. In these materials local strain distributions effectively form quasi zero-dimensional potentials, whose localized states may be populated by carrier capture from the continuum states. Using a recently developed Lindblad single-particle approach, here we study the phonon-induced carrier capture in a MoSe$_2$ monolayer. Although one decisive control parameter is the energy selection rule, which links the energy of the incoming carriers to that of the final state via the emitted phonon, we show that additionally the spatio-temporal dynamics plays a crucial role. By varying the direction of the incoming carriers with respect to the orientation of the localized potential, we introduce a new control mechanism for the carrier capture: the spatial control.

Nonequilibrium Theory of the Conversion Efficiency Limit of Solar Cells Including Thermalization and Extraction of Carriers

The ideal solar cell conversion efficiency limit known as the Shockley-Queisser (SQ) limit, which is based on a detailed balance between absorption and radiation, has long been a target for solar cell researchers. While the theory for this limit uses several assumptions, the requirements in real devices have not been discussed fully. Given the current situation in which research-level cell efficiencies are approaching the SQ limit, a quantitative argument with regard to these requirements is worthwhile in terms of understanding of the remaining loss mechanisms in current devices and the device characteristics of solar cells that are operating outside the detailed balance conditions. Here we examine two basic assumptions: (1) that the photo-generated carriers lose their kinetic energy via phonon emission in a moment (fast thermalization), and (2) that the photo-generated carriers are extracted into carrier reservoirs in a moment (fast extraction). Using a model that accounts for the carrier relaxation and extraction dynamics, we reformulate the nonequilibrium theory for solar cells in a manner that covers both the equilibrium and nonequilibrium regimes. Using a simple planar solar cell as an example, we address the parameter regime in terms of the carrier extraction time and then consider where the conventional SQ theory applies and what could happen outside the applicable range.

Electron Scattering via Interface Optical Phonons with High Group Velocity in Wurtzite GaN-based Quantum Well Heterostructure

Here we present a detailed theoretical analysis of the interaction between electrons and optical phonons of interface and confined modes in a wurtzite AlN/GaN/AlN quantum well heterostructure based on the uniaxial dielectric continuum model. The formalism describing the interface and confined mode optical phonon dispersion relation, electron–phonon scattering rates, and average group velocity of emitted optical phonons are developed and numerically calculated. The dispersion relation of the interface phonons shows a convergence to the resonant phonon frequencies 577.8 and 832.3 cm−1 with a steep slope around the zone center indicating a large group velocity. At the onset of interface phonon emission, the average group velocity is small due to the large contribution of interface and confined mode phonons with close-to-zero group velocity, but eventually increases up to larger values than the bulk GaN acoustic phonon velocity along the wurtzite crystal c-axis (8 nm/ps). By adjusting the GaN thickness in the double heterostructure, the average group velocity can be engineered to become larger than the velocity of acoustic phonons at a specific electron energy. This suggests that the high group velocity interface mode optical phonons can be exploited to remove heat more effectively and reduce junction temperatures in GaN-based heterostructures.

Temperature Dependences of the Threshold Current and Output Power of a Quantum-Cascade Laser Emitting at 3.3 THz

The active region of a THz (terahertz) quantum-cascade laser based on three tunnel-coupled GaAs/Al0.15Ga0.85As quantum wells with a resonance-phonon depopulation scheme is designed. Energy levels, matrix elements of dipole transitions, and gain spectra are calculated as functions of the applied electric-field strength F and temperature. It is shown that the maximum gain is implemented at a frequency of 3.37 THz and F = 12.3 kV/cm. Based on the proposed design, a quantum-cascade laser emitting at ~3.3 THz with a double metal waveguide and Tmax ~ 84 K is fabricated. The activation energy Ea = 23 meV for longitudinal-optical (LO) phonon emission upon the stimulated recombination of hot electrons from the upper laser level to the lower one is determined from the Arrhenius temperature dependence of the output power.

Investigation of cyclotron-phonon resonance in monolayer molybdenum disulfide

Transition-metal dichalcogenide monolayers recently have attracted much attention motivated by their exotic physical properties. In this paper, we theoretically investigate the optical absorption in the monolayer MoS2 which is subjected to a uniform static magnetic field and an electromagnetic wave. The magneto-optical absorption power (MOAP) is calculated using the projection operator technique in the linear response scheme, taking account of the electron–optical phonon interaction at high temperature. Both phonon emission and phonon absorption processes are included. The cyclotron–phonon resonance (CPR) is observed in the photon energy dependence of the MOAP. Numerical analyses show that the photon energy satisfying CPR condition depends linearly on the strength of magnetic field, which is similar to that in conventional low-dimensional semiconductors but different from that in graphene. The increase of the full width at half maximum (FWHM) of CPR peaks with increasing magnetic field shows a similar behaviour to that in graphene. In addition, FWHM increases slightly with temperature, which is different from that in graphene where the FWHM is temperature independent. Our investigation provides basic information about the magneto-optical properties of the monolayer MoS2 that are useful for further experiments and applications.

Accelerated Carrier Relaxation through Reduced Coulomb Screening in Two-Dimensional Halide Perovskite Nanoplatelets

For high-speed optoelectronic applications relying on fast relaxation or energy-transfer mechanisms, understanding of carrier relaxation and recombination dynamics is critical. Here, we compare the differences in photoexcited carrier dynamics in two-dimensional (2D) and quasi-three-dimensional (quasi-3D) colloidal methylammonium lead iodide perovskite nanoplatelets via differential transmission spectroscopy. We find that the cooling of excited electron–hole pairs by phonon emission progresses much faster and is intensity-independent in the 2D case. This is due to the low dielectric surrounding of the thin perovskite layers, for which the Fröhlich interaction is screened less efficiently leading to higher and less density-dependent carrier-phonon scattering rates. In addition, rapid dissipation of heat into the surrounding occurs due to the high surface-to-volume ratio. Furthermore, we observe a subpicosecond dissociation of resonantly excited 1s excitons in the quasi-3D case, an effect which is suppressed in the 2D nanoplatelets due to their large exciton binding energies. The results highlight the importance of the surrounding environment of the inorganic nanoplatelets on their relaxation dynamics. Moreover, this 2D material with relaxation times in the subpicosecond regime shows great potential for realizing devices such as photodetectors or all-optical switches operating at THz frequencies.

Quantum Transition Properties of Quasi Two Dimensional and Electron-Phonon Interacting System in ZnO and CdS.

We investigated theoretically the quantum optical transition properties of quasi 2-Dimensional Landau splitting system, in ZnO and CdS. We apply the Quantum Transport theory (QTR) to the system in the confinement of electrons by square well confinement potential. We use the projected Liouville equation method with Equilibrium Average Projection Scheme (EAPS). In order to analyze the quantum transition, we compare the temperature and the magnetic field dependencies of the QTLW and the QTLS on two transition processes, namely, the phonon emission transition process and the phonon absorption transition process.

Energy loss rate of hot electrons due to polar-optical phonon modes in a semiconductor nanowire under transverse electric field

Within the frame of electron-temperature model we calculate the average energy loss rate due to interface and confined longitudinal optical (LO) phonon emission from a hot-electron gas to a cold lattice in polar semiconductor nanowire surrounded by non-polar material. The system both with and without hot-phonon effect is investigated. The impact of a perpendicular electric field on average energy loss rate is explored. The energy loss rate dependences on electric field strength, wire radius and electron temperature are obtained. It has been shown that the energy loss rate is more sensitive to the electric field when the wire radius is larger. The presented results indicate that the electric field applied perpendicularly to the wire axis can serve as a means to control the energy loss rate. There is an experimental evidence concerning to the increase of energy loss rate with increasing electron temperature as we have obtained.

Impact of the hot phonon effect on electronic transport in monolayer silicene

The hot phonon effect is a non-equilibrium phenomenon that has an important role in high-field electronic transport in two-dimensional electron gases and in 2D materials like graphene. In this work, the influence of this effect on the electronic transport properties of silicene is investigated by means on an ensemble Monte Carlo simulator that accounts self-consistently for the out-of-equilibrium phonon population and the scattering events under high electric field conditions. In this way, the observed reduction in the carrier drift velocity is analyzed in terms of the microscopic scattering events, wavevector distributions, net phonon emission and phonon temperatures. A comparison with the case of graphene is also carried out, showing that despite the similarities concerning the linear bandstructure near the Dirac points, the hot phonon effect is less dominant in silicene due to the differences in the phonon branches and electron–phonon couplings. Even so, neglecting the role of an out-of-equilibrium phonon population may overestimate the high-field drift velocity in silicene up to 25% at moderate carrier concentrations.