Elevated Drain Research Articles

Ambipolar current suppression in drain elevated TFET using a novel extended drain structure with a moderate doping profile

In this paper, a simple and compact silicon-based Elevated and Extended Drain with Hetero-Dielectric Gate Oxide TFET (EED HDGO TFET) is proposed to suppress the ambipolar current in Elevated Drain TFET (ED TFET). The proposed device structure uses a moderately doped drain with a doping concentration of ∼1018 cm−3 and a high drain length of ∼50–100 nm. The combination of the moderate drain doping profile and the extended drain length reduced the impact of the electrostatic potential from the positive voltage of the drain electrode on the channel–drain junction. This structural technique widens the tunneling width at the channel–drain region causing the tunneling current to decrease significantly. The tunneling width is further increased by structurally isolating the channel–drain junction region from the gate electrode. Thus, distancing the channel–drain junction from both the gate electric field and the static drain potential of the drain electrode causes full suppression of the ambipolar (Iamb) current. The proposed structure yields Iamb and Ioff as low as ∼10−18 A/μm and ∼10−17 A/μm respectively, while maintaining the Ion as ∼0.3 mA. The device is optimized for low power and high-speed digital circuits through intensive parametric analysis on gate–drain Cgd and the gate–source Cgs capacitances for various device parameters.

Output breakdown characteristics of amorphous InGaZnO thin-film transistors at high gate voltage

Output characteristics of top-gate amorphous InGaZnO thin-film transistors are investigated at high gate voltage. With the increasing drain voltage, an output breakdown crops up closely following a drastic uprush of drain current. Such dramatically elevated drain current derives from the self-heating (SH) effect-generated channel donors. Measured at different high gate voltages, the output breakdown occurs in either linear or saturation regime, respectively, corresponding to normally-on and normally-off transfer curve, while the SH-triggering powers are almost identical. The conductor-like channel originates from the SH-induced high donor population, while the disconnection between channel and drain is caused by a highly defective region near drain, where the hot-carrier damage is violently activated by the SH-induced high temperature and the high drain electric field in saturation regime.

Drain fluid biomarkers for prediction and diagnosis of clinically relevant postoperative pancreatic fistula: A narrative review.

Clinically relevant postoperative pancreatic fistula (CR-POPF) has continued to compromise patient recovery post-pancreatectomy despite decades of research seeking to improve risk prediction and diagnosis. The current diagnostic criteria for CR-POPF requires elevated drain fluid amylase to present alongside POPF-related complications including infection, haemorrhage and organ failure. These worrying sequelae necessitate earlier and easily obtainable biomarkers capable of reflecting evolving CR-POPF. Drain fluid has recently emerged as a promising source of biomarkers as it is derived from the pancreas and hence, capable of reflecting its postoperative condition. The present review aims to summarise the current knowledge of CR-POPF drain fluid biomarkers and identify gaps in the field to invigorate future research in this critical area of clinical need. These findings may provide robust diagnostic alternatives for CR-POPF and hence, to clarify their clinical utility require further reports detailing their diagnostic and/or predictive accuracy.

P-P45 Prognostic Value of CRP in Post-PPPD and Whipple’s Re-Intervention

Abstract Background Several studies have aimed to use different biochemical and haematological markers to predict relevant post-operatively pancreatic fistulas after hepatobiliary operations, however none has been defined as the gold-standard. This study aimed to evaluate the sensitivity and specificity of day 3 C-reactive protein (CRP) and drain amylase values in predicting re-intervention in patients who have undergone pancreatico-duodenectomy (PPPD) or Whipple’s procedure. Methods Retrospective collection of data from a prospective database of patients who underwent PPPD or Whipple’s procedure between January 2017 and February 2021. Serum CRP was collected from day one to day five post-operatively, and day three or the closest available result of post-surgery drain amylase values were considered. Cutoff values were determined as follows: day three CRP optimal level was determined by the median (175 mg/L), and drain amylase was determined by three times the upper limit of normal serum amylase level (330 U/L). Post-operative pancreatic fistulas (POPF) were classified as per the 2016 International Study Group for Pancreatic Surgery (ISGPS). Re-intervention was defined as any deviation from the normal post-surgical care – including interventional radiology procedures, embolisation, re-look laparotomies and re-admission to Intensive Care. Results A total of 217 patients were included in this study – 182 underwent pylorus preserving pancreaticoduodenectomy as opposed to those who had Whipple procedure. 55 (25%) patients required re-intervention post-operatively. A day three CRP above 175 showed a sensitivity of 78% and specificity of 66% in predicting re-intervention in these patients. The combination of this and elevated drain amylase proved to be more sensitive (85%) and specific (87%) than the CRP alone. Conclusions Day 3 CRP and drain amylase are accurate predictors of post-PPPD and Whipple’s re-interventions. We aim to include this as part of the local Enhanced Recovery Pathway to help identify patients that will potentially develop complications requiring further surgical management.

Transient Analysis of Tunnel Field-Effect Transistor with Raised Drain.

This paper investigates the electrical performance of a proposed tunnel field-effect transistor (TFET) via transient analysis. The proposed TFET has three features: a SiGe channel, a fin structure, and an elevated drain. As the SiGe channel and fin structure make a small tunnel resistance, the ONstate current can be increased. In addition, an elevated drain can suppress an ambipolar current (IAMB). The transient characteristics should be confirmed in terms of inverter switching for the high applicability of the proposed device to the logical circuit. The analysis is verified through technology computer-aided design (TCAD) simulations calibrated with rigorously fabricated devices. Based on the simulation results, we conclude that the proposed TFET shows better ON/OFF transient characteristics when compared to conventional TFETs and the small gate-to-drain capacitance (CGD) can improve the transient characteristics in TFET.

Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain.

In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (ION) and low-level OFF-state current (IOFF); ambipolar current (IAMB). In detail, its ION is enhanced by 24 times more than that of Si control group and by 6 times more than of SiGe control group. The IAMB can be reduced by up to 900 times compared with the SiGe control group. In addition, technology computer-aided design (TCAD) simulation is performed to optimize electrical performance. Then, the benchmarking of ON/OFF current is also discussed with other research group’s results.

Perioperative Management of Patients with Colovesical Fistula

BackgroundColovesical fistula (CVF) is an uncommon complication of diverticulitis. Substantial heterogeneity exists in the perioperative management of this condition. We seek to evaluate the role of bladder leak testing, closed suction drainage, prolonged bladder catheter usage, and routine postoperative cystogram in the management of CVF. Study DesignThis is a retrospective study from a single academic health center investigation patients undergoing operation for diverticular CVF from 2005 to 2015 (n = 89). ResultsPatients undergoing operative repair for diverticular CVF resection had a mortality of 4% and overall morbidity of 46%. Intraoperative bladder leak test was performed in 36 patients (40%) and demonstrated a leak in 4 patients (11%). No patients with a negative intraoperative bladder leak test developed a urinary leak. Overall, five (6%) patients developed postoperative bladder leak. Three were identified by elevated drain creatinine and two by cystogram. The diagnostic yield of routine cystogram was 3%. All bladder leaks were diagnosed between postoperative day 3 and 7. Of patients with a postoperative bladder leak, none required reoperation and all resolved within 2 months. ConclusionsThere is significant variability in the management of patients undergoing operation for CVF. Routine intraoperative bladder leak test should be performed. Cystogram may add cost and is low yield for routine evaluation for bladder leak after operation for CVF. Urinary catheter removal before postoperative day 7 should be considered.

Drain fluid amylase on post-operative day 5 as pronostic factor of grade B–C pancreatic fistula after distal pancreatectomy

Background: Post-operative pancreatic fistula (POPF) is one of the most feared complications after distal pancreatectomy (DP) and associates an increased morbidity and mortality. Aim: To analyze the incidence and risk factors of POPFs in our series and stratify the risk factors for grade B/C POPFs after DP. Methods: We performed a single-center retrospective study which analyzes patients who underwent DP between 2010 and 2017. We recollected demographic, surgical, post-operative and histological data. Drain fluid amylase was examined on postoperative day 3, 5 and 7, following our protocol. POPFs were classified according to the International Study Group of Pancreatic Fistula definitions. We performed a descriptive analysis and multivariate logistic regression to determine the prognostic factors of POPF Results: A total of 92 patients underwent DP. Laparoscopic approach was performed in 39 (42%) patients, with a conversion rate of 22%. In 85% of the cases we used endostapler and in 24% we performed manual suture of the pancreatic stump. Sealant was placed on the resection surface in 60% of the cases. POPF was diagnosed in 26% of the patients, of whom 19% were grade B-C. None of the variables analyzed were significantly associated with POPF, but the drain fluid amylase >1000 U/L on post-operative day 5, was associated with grade B-C POPFs [OR 20, p = 0.028 (CI 1.301–287)]. Conclusion: In our series, no overall POPF predictive factors were found after DP. However, an elevated drain fluid amylase on post-operative day 5 can predict a worst outcome and should influence our therapeutic strategy.

Reduction method of gate-to-drain capacitance by oxide spacer formation in tunnel field-effect transistor with elevated drain

A novel fabrication method is proposed to reduce large gate-to-drain capacitance (CGD) and to improve AC switching characteristics in tunnel field-effect transistor (TFETs) with elevated drain (TFETED). In the proposed method, gate oxide at drain region (GDOX) is selectively formed through oxide deposition and spacer-etch process. Furthermore, the thicknesses of the GDOX are simply controlled by the amount of the oxide deposition and etch. Mixed-mode device and circuit technology computer aided design (TCAD) simulations are performed to verify the effects of the GDOX thickness on DC and AC switching characteristics of a TFETED inverter. As a result, it is found that AC switching characteristics such as output voltage pre-shoot and falling/rising delay are improved with nearly unchanged DC characteristics by thicker GDOX. This improvement is explained successfully by reduced CGD and positive shifted gate voltage (VG) versus CGD curves with the thicker GDOX.

A semi-analytical, two-dimensional model for AlGaN/GaN high-electron-mobility-transistor Schottky currents at high reverse voltages

A semi-analytical model is derived for the reverse Schottky gate current in AlGaN-GaN high-electron-mobility-transistors (HEMTs) in off-state at high drain voltage. At elevated drain voltages, the depletion of the two-dimensional electron gas (2-DEG) not only exists directly underneath the gate contact but also extends from the gate towards the drain. This increases the electric fields at the gate edge on the drain side, which causes an increase in the gate leakage current. In this paper, a new method is proposed to calculate the electric fields at the gate edge using conformal mapping of the charge configuration in the device. This method also allows calculation of the influence of charges trapped at the interface between the semiconductor and the passivation layer next to the gate. It is shown that direct tunneling is the dominant current mechanism at high drain voltages, such that the current becomes insensitive to temperature variation. Interface charges next to the gate exert a large influence on the high voltage leakage current. It is argued that temperature variations of the high voltage leakage current are caused by temperature dependent changes in trapped charge.

Does fibrin glue sealant decrease the rate of anastomotic leak after a pancreaticoduodenectomy? Results of a prospective randomized trial

BackgroundThe aim of this study was to evaluate the effect of topical fibrin glue applied externally to all anastomoses after a pancreaticoduodenectomy (PD) on drain lipase levels, anastomotic leaks, complication rates and length of hospital stay. MethodsA standardized non‐pylorus preserving PD was performed with or without fibrin glue applied to each anastomosis. ResultsFifty‐seven patients were randomized: 32 with and 25 without TISSEEL. There were no statistical differences in each group with respect to drain lipase levels (high 40% versus 43%, P = 0.794), complications including gastric or biliary leaks (24% versus 28%, P = 1.00), wound infection (16% versus 9%, P = 0.28) and a Clavien score of 3 or more (16% versus 25%, P = 0.757) or hospital stay (12 versus 17 days, P = 0.777). Most patients with elevated drain lipase levels had an unaltered clinical course not predictive of adverse outcomes. However, the operative finding of a soft pancreas (27 out of 57 patients) was associated with post‐operative complications (P = 0.002). There were no peri‐operative deaths. Conclusions1Fibrin glue application to all anastomoses does not alter drain lipase levels.2Drain lipase levels are not a significant surrogate marker for clinically significant anastomotic leaks or complications.3Fibrin glue application did not reduce the incidence of an anastomotic leak or complications.

The effect of acellular dermal matrix on drain secretions after immediate prosthetic breast reconstruction

In recent years the acellular dermal matrix (ADM) has gained popularity in prosthetic breast reconstruction. These procedures involve placement of a closed suction drain in the reconstructed breast. Although it is now widely accepted that ADM has an overall positive effect on the outcome of breast reconstruction, data regarding its effect on postoperative drain secretions is lacking. This study was designed to quantitatively evaluate the influence of ADM on postoperative drain secretions in the setting of immediate prosthetic breast reconstruction (IPBR). This is a prospective, comparative controlled study. Two groups of 16 patients each underwent skin sparing mastectomies (SSM) and IPBR with or without ADM. Closed suction drains were left in all the reconstructed breasts and daily secretion volumes were recorded and compared. Postoperative complications were also noted. Patients in the ADM group showed higher daily and overall secretion volumes compared with patients in the control group (p = 0.014) and the time for removal of the drains was higher by an average of 5 days (13 compared with 8 days, respectively; p = 0.004). There was no correlation between ADM and infection. This study provides the first objective evidence that ADM contributes to elevated and prolonged drain secretions when used for IPBR. This might affect possible prosthesis-related complications (e.g., rotation and malposition, capsular contraction, seroma formation, and infection). This study also noted erythema of the post-mastectomy skin flaps in selected patients, which may be attributable to a local inflammatory reaction to the ADM rather than infection.

Relationship of drain amylase and anastomotic leak after esophagectomy.

118 Background: Esophagectomy is considered the only curative approach in patients with esophageal cancers without locally advanced or metastasis. Anastomotic leak can lead to significant morbidity and mortality. CT esophagram (CTE) is a sensitive method of evaluating for leak; however this test carries with it financial cost and radiation exposure. This study evaluates the utility of drain amylase in the prediction of anastomotic leak. Methods: Fifty-nine patients underwent esophagectomy between 3/10 and 8/12; serial drain amylases and CTE were obtained in 50. Leak was defined by extravasation of contrast or the presence of empyema on CTE. Elevated drain amylase was defined as any level > 400 IU/L. Chi-square and descriptive statistics were performed and the sensitivity of drain amylase >400 IU/L in predicting leak was calculated. Results: A minimally invasive esophagectomy was performed in 47, and an open Ivor-Lewis in 2 and a minimally invasive Ivor-Lewis in 1. Stapled intra-thoracic anastomoses were performed in 47, 3 had a cervical anastomoses. Average age was 61 years and 84% were males. Leak occurred in 6 patients (12.5%). One patient with a late leak was excluded from analysis as they did not have concurrent drain amylase values. This patient had low amylase levels and a normal CTE, though later presented with leak. The overall peri-operative mortality rate was 4.2% (2/48). Mortality in the non-leak and leak cohorts were 0% & 33%. Drain amylase was an accurate marker of anastomotic leak. Of 6 patients with an elevated drain amylase, 5 had an anastomotic leak (sensitivity 83.3%). 40/41 patients with low drain amylase had no leak. Using a cut-off value of 400 IU/L, the negative predictive value of drain amylase in predicting leak after esophagectomy was 97.6% (95%CI; 85.6, 99.9). Conclusions: Drain amylase is a simple and inexpensive test that has excellent sensitivity and negative prediction for the detection of anastomotic leak after esophagectomy. To our knowledge, this is the first study to demonstrate this finding. Routine evaluation of drain amylase may safely replace CTE in the management of patients after esophagectomy, thus reducing radiation exposure and overall cost.

A low voltage operational single-walled carbon nanotube thin-film transistor containing a high capacitance gate dielectric layer produced by layer-by-layer deposition

This paper presents the characteristics of a low voltage driven thin-film transistor (TFT) containing an active layer coated with a single-walled carbon nanotube (SWCNT) network. To make the high capacitance gate dielectrics layers, poly(ethylene imine) and the titanium oxide precursor, titanium(IV) bis(ammonium lactate) dihydroxide, were coated by a layer-by-layer deposition method. Through this process we obtained a capacitance of 118 nF/cm 2 and a total thickness of about 70 nm. The SWCNT active layer was deposited by spray-coating onto the layered-gate dielectric using a solution containing purified SWCNTs and a polystyrene additive. We used polystyrene in the coating solution to increase the dispersion of SWCNTs in the 1-methyl-2-pyrrolidone solution and decrease current leakage though the TFT channels. The resulting TFT showed a mobility of 6.7 cm 2/V s, a threshold voltage of −0.88 V, and an on/off ratio of about 500 at operating voltages less than 2 V, which is suitable for the operation of various portable electronic devices. The output characteristics showed a good linear character and well-saturated behavior at elevated drain voltage.

Improved current drivability with back-gate bias for elevated source and drain structured FD-SOI SiGe MOSFET

Fully depleted (FD) silicon-on-insulator (SOI) MOSFET structure with back-gate bias is suggested for high speed and low power consumption for portable communication application. Ni silicide is demonstrated for improving current drivability for low power consumption by reducing series resistance in the source and drain region. Threshold voltage adjustment is also achieved through applied back-gate bias. For the formation of the buried back-gate, the selection of impurity type as well as its doping concentration is controlled. Employing back-gate bias for FD-SOI NMOSFET, improved current drivability with variable threshold voltage is achieved. Short channel devices are fabricated and its electrical characteristics are obtained under various conditions.

Distinguishing between parenchymal and anastomotic leakage at duct-to-mucosa pancreatic reconstruction in pancreaticoduodenectomy

To distinguish anastomotic from parenchymal leakage at duct-to-mucosa reconstruction of the pancreatic remnant. We reviewed the charts of 68 pancreaticod-uodenectomies performed between 5/2000 and 12/2005 with end-to-side duct-to-mucosa pancreatojejunostomy (PJ). The results of pancreatography, as well as peripancreatic drain volumes, and amylase levels were analyzed. Of 68 pancreatojejunostomies, 48 had no leak by pancreatography and had low-drain amylase (normal); eight had no pancreatographic leak but had elevated drain amylase (parenchymal leak); and 12 had pancreatographic leak and elevated drain amylase (anastomotic leak). Although drain volumes in the parenchymal leak group were significantly elevated at postoperative day (POD) 4, no difference was found at POD 7. Drain amylase level was not significantly different at POD 4. In contrast, at POD 7, the anastomotic-leak group had significantly elevated drain amylase level compared with normal and parenchymal-leak groups (14158 +/- 24083 IU/L vs 89 +/- 139 IU/L and 1707 +/- 1515 IU/L, respectively, P = 0.012). For pancreatic remnant reconstruction after pancreaticoduodenectomy, a combination of pancreatogram and peripancreatic drain amylase levels can be used to distinguish between parenchymal and anastomotic leakage at pancreatic remnant reconstruction.

Laparoscopic distal pancreatectomy with splenic preservation

The technique of distal pancreatectomy has been well described, both with en bloc resection of the spleen and with splenic preservation. Splenic preservation during pancreatic tail resection is desirable when oncologically appropriate, yet it is technically challenging, particularly with laparoscopic approaches. Skeletonization of the splenic artery and vein is associated with longer operative times and greater potential for bleeding. The authors report their experience with splenic preservation during laparoscopic pancreatic resection using ligation of the splenic vessels and preservation of the short gastric vessels. A retrospective chart review was performed for all patients who underwent attempted laparoscopic pancreatic resection at Duke University Medical Center from July 2002 to October 2005. Charts were analyzed for demographic information, length of hospital stay, conversion, splenic preservation, and postoperative complications. A total of 12 laparoscopic distal pancreatic resections were attempted for three men and nine women with a mean age was 55.8 years (range, 33-74 years). All 12 patients underwent distal pancreatectomy, 8 with splenic preservation. The spleen was removed from three patients using splenic hilar lesions that prevented splenic salvage. One patient required splenectomy secondary to more than 50% ischemia of the spleen. No patients with preoperatively diagnosed malignancy underwent splenic salvage. The final pathologic diagnosis included neuroendocrine tumors (n = 2), cystic serous (n = 4) and mucinous (n = 2) neoplasms, intraductal papillary mucinous neoplasm (IPMN) (n = 1), pancreatitis (n = 2), and adenocarcinoma (n = 1). Two patients underwent conversion to open surgery for thickened parenchyma secondary to chronic pancreatitis (17%). There were no other conversions. There were three chemical leaks (25%) diagnosed by elevated drain amylase and low volume output, which were managed with intraoperatively placed drains removed at the initial postoperative clinic visit. There were three higher volume leaks (25%) that required extended or percutaneous drainage, with eventual removal. The average blood loss was 215 ml (range, 50-700 ml). The average operative time was 3 h and 41 min (range, 2 h 15 min to 5 h 58 min). The average length of hospital stay was 4 days (range, 2-7 days). Splenic preservation should be performed when technically possible to decrease the morbidity of laparoscopic distal pancreatectomy. The choice to ligate the splenic vessels allows for shorter operative times with minimal perioperative morbidity and blood loss while maintaining the spleen.

Laparoscopic Radical Prostatectomy After Neoadjuvant Hormonal Therapy: An Apparently Safe and Effective Procedure

In an effort to determine the safety and efficacy of laparoscopic radical prostatectomy (LRP) in patients who have received neoadjuvant hormonal therapy (NHT), our initial series of 65 patients undergoing successful LRP was analyzed, specifically comparing 5 patients who received neoadjuvant hormonal therapy to 60 who did not. From March 2000 to March 2002, 68 patients were scheduled for LRP. Three cases, none post-NHT, were converted to open radical retropubic prostatectomy (RRP). Clinical and pathologic data were recorded on the remaining 65 patients, 5 of who had received NHT. Forty-two bilateral and 16 unilateral nerve sparing LRP were performed in the non-NHT cohort, and 3 bilateral and 1 unilateral nerve sparing LRP in the NHT cohort. The mean patient age, preoperative prostate specific antigen (PSA), clinical stage, and biopsy grade were similar for the NHT and the non-NHT LRP cohorts. The mean estimated blood loss (EBL) and serum hemoglobin decrease (preoperative to postoperative day 1) were lower in the NHT cohort than the non-NHT cohort: 160 mL and 2.4 g/dL vs. 317 mL and 3.1 g/dL, respectively. The mean operative time and hospital stay were similar: 5.7 hours and 2.4 days for the NHT cohort and 5.8 hours and 2.8 days for the non-NHT cohorts. As expected, the mean prostate weight was lower for the NHT cohort: 36.8 g vs. 46.5 g. All NHT cohort tumors were pathologic stage pT2, with negative margins. Eleven (18%) of the non-NHT cohort had pathologic T3 (10 patients) or T4 (1 patient) tumors and 10 (17%) specimens had a positive surgical margin. Four of 5 (80%) NHT cohort and 21 of 25 (84%) non-NHT cohort patients are continent (no pad use) 3 to 6 months postsurgery. One NHT cohort patient (20%) and 20 (33%) non-NHT cohort patients had an elevated drain fluid creatinine 24 hours postoperatively. There were no other complications in the NHT cohort. All 5 NHT cohort patients have no evidence of recurrent disease, whereas 2 non-NHT cohort patients (3.3%) have developed PSA recurrence. No NHT patient and only 1 non-NHT patient received a blood transfusion postoperatively. LRP appears to be a safe and efficacious procedure in patients who have received NHT. Perioperative morbidity of NHT patients undergoing LRP appears equivalent to non-NHT patients, with slightly lower EBL, hemoglobin decrease, urinary extravasation, positive margin, and complication rates.

P‐2: A Novel Self‐Aligned SiGe Elevated S/D polycrystalline‐Silicon Thin‐Film Transistor

AbstractA novel self‐aligned SiGe elevated source and drain (S/D) poly‐Si thin film transistor (poly‐Si TFT) was fabricated. The elevated source and drain regions were selectively grown by ultra‐high vacuum chemical vapor deposition (UHVCVD) at 550°C. The resultant transistor has a thin channel region and a self‐aligned thick S/D region, which leads to better performance. With this structure, the turn‐on current in the I‐V characteristics increases dramatically and the drain breakdown voltage is increased as well, compared with conventional thin‐channel poly‐Si TFTs.

Study of an Elevated Drain Fabrication Method for Ultra-Shallow Junction

An elevated diffusion layer fabricated from polycrystalline silicon (poly-Si) by solid phase diffusion was investigated in detail by secondary-ion mass spectroscopy (SIMS) analysis. We clarified that it was necessary to control the native oxide in the poly-Si/Si substrate interface and use small-grained poly-Si to fabricate uniform and controllable shallow junctions. The low-capacitance sidewall-elevated drain (LCSED) metal oxide semiconductor field-effect transistor (MOSFET) fabricated by the oxygen-free load-lock low-pressure chemical vapor deposition (LPCVD) poly-Si (L/L poly-Si) was extremely effective for marked scaling down of transistor size and realizing an ultra low reversed junction leakage current.