Electro-optic Modulator Research Articles

Highly efficient lead zirconate titanate ring modulator

Advanced photonic integrated circuits require large-scale integration of high-speed electro-optic (EO) functional components on a chip. Low power consumption and high operation speed are thus key metrics for almost all integrated EO devices. Here, we demonstrated a ring resonator modulator based on lead zirconate titanate (PZT) on a SiO2/Si substrate. The ridge waveguides were employed to keep a large spatial overlap between the optical field and the electric field within the PZT layer. The device exhibits a data rate of 56 Gbit/s and significant tuning efficiency, reaching up to 35.8 pm/V, corresponding to 1.17 V·cm. The demonstration of energy efficient and high-speed EO modulation paves the way for realizing dense PZT photonics integrated circuits.

Laser-sound reproduction by pulse amplitude modulation audio streams

Recently, the possibility to reproduce complex continuous acoustic signals via pulsed laser-plasma sound sources was demonstrated. This was achieved by optoacoustic transduction of dense laser pulse trains, modulated via single- or multi-bit Sigma–Delta, in the air or on solid targets. In this work, we extend the laser-sound concept to amplitude modulation techniques. Particularly, we demonstrate the possibility of transcoding audio streams directly into acoustic pulse streams by analog pulsed amplitude modulation. For this purpose, an electro-optic modulator is used to achieve pulse-to-pulse amplitude modulation of the laser radiation, similarly to the multi-level Sigma–Delta method. The modulator is directly driven by the analog input stream through an audio interface. The performance of the system is evaluated at a proof-of-principle level for the reproduction of test audio signals such as single tones, double tones and sine sweeps, within a limited frequency range of the audible spectrum. The results are supported by computational simulations of the reproduced acoustic signals using a linear convolution model that takes as input the audio signal and the laser-generated acoustic pulse profile. The study shows that amplitude modulation allows for significant relaxation of the laser repetition rate requirements compared to the Sigma–Delta-based implementation, albeit at the potential cost of increased distortion of the reproduced sound signal. The nature of the distortions is analyzed and a preliminary experimental and computational investigation for their suppression is presented.

Integrated Ultra‐Wideband Dynamic Microwave Frequency Identification System in Lithium Niobate on Insulator

AbstractThe capability to identify the frequency of unknown microwave signals with an ultra‐wide measurement bandwidth is highly desirable in radar astronomy, satellite communication, and 6G networks. Compared to electronic solutions, the integrated photonic technology‐enabled dynamic instantaneous frequency measurement (DIFM) approach is attractive as it offers unique advantages, such as ultra‐wide frequency measurement bandwidth, high flexibility, and immunity to electromagnetic interference. However, so far the bandwidth of the reported DIFM systems based on integrated photonic technology is limited to below 30 GHz due to the finite bandwidth of electro‐optical modulators (EOMs), limiting their applications, particularly in the field of millimeter wave technology (30–300 GHz). Here, the first integrated dynamic microwave instantaneous frequency measurement system with a record‐breaking operation bandwidth (ranging from 5 to 65 GHz) and low root‐mean‐square (RMS) error (≈300 MHz) is presented on the lithium niobate on insulator (LNOI) integrated photonic platform. This demonstration paves the way for high‐performance millimeter wave photonic integrated devices using the LNOI platform.

Enabling cost-effective wireless THz communication through semiconductor optical amplifier’s direct/cross gain modulation for seamless integration of hybrid fiber-coaxial connectivity

We propose a cost-effective THz wireless communication scheme for future femtocell networks that leverages either direct gain modulation (DGM) or cross gain modulation (XGM) of a semiconductor optical amplifier (SOA) to convert coaxially or optically carried data into intensity-modulated THz waves, respectively. This architecture, based on an SOA and a uni-traveling-carrier photodiode (UTC-PD), has advantages over typical THz modulation schemes involving a resonant tunneling diode or an electro-optic modulator combined with a UTC-PD. Consequently, it facilitates the seamless convergence of hybrid fiber-coaxial networks to THz radio access networks with low cost, straightforward monolithic integration, and a more compact footprint. Furthermore, we experimentally verified the possibility of non-return-to-zero on–off keying wireless communication over 0.5 m in the 300 GHz band, achieving real-time transmission of 4 Gbit/s for coaxial access via an SOA’s DGM and 10 Gbit/s for fiber access via the SOA’s XGM. Notably, these data rates were attained by simple non-coherent THz intensity demodulation based on a Fermi-level managed barrier diode while meeting the 7% hard-decision forward error correction (HD-FEC) threshold (3.4×10−3). Finally, we conducted an analysis of the merits and drawbacks of the proposed THz communication scheme based on the combination of an SOA and a UTC-PD, discussed bottlenecks that hinder further rate improvement, and explored possibilities for optimization. In conclusion, this scheme is crucial for realizing future ultra-high-speed wireless networks that seamlessly connect to fiber-coaxial networks.

Arrayed electro-optic modulators for novel WDM multiplexing

In this paper, a novel silicon-on-chip integrated 4 × 1 wavelength division multiplexing (WDM) multiplexer has been developed. This is the first time that the multiplexer design incorporates arrayed electro-optical modulators with crosstalk cancellation. The design utilizes two types of electro-optic modulators in each channel. The first modulator, based on 1D-PhCNBC, extracts the desired wavelengths from the WDM spectrum. The second modulator, based on coupled hybrid plasmonics, acts as a switch to eliminate crosstalk of the desired optic wavelength signal at the multiplexer output. By combining the advantages of electro-optical modulators and crosstalk cancellation techniques, we anticipate that our proposed design contributes to the advancement of WDM multiplexing technology and facilitates the implementation of efficient and compact optical communication systems. Additionally, this synergy enables enhanced performance, reduced signal interference, and improved signal quality, leading to more reliable and high-speed data transmission in optical networks. The functionality of the device is theoretically simulated using 3D-FDTD (Finite-Difference Time-Domain) method.

Wideband and low-spurious optical waveform generator for optically addressable quantum systems manipulation and control

Optical manipulation of quantum systems requires stable laser sources able to produce complex waveforms over a large frequency range. In the visible region, such waveforms can be generated using an acousto-optic modulator driven by an arbitrary waveform generator, but these suffer from a limited tuning range typically of a few tens of MHz. Visible-range electro-optic modulators are an alternative option offering a larger modulation bandwidth, however they have limited output power which drastically restricts the scalability of quantum applications. There is currently no architecture able to perform phase-stabilized waveforms over several GHz in the visible or near infrared region while providing sufficient optical power for quantum applications. Here we propose and develop a modulation and frequency conversion set-up able to deliver optical waveforms over a large frequency range, with a high spurious extinction ratio, scalable to the entire visible/near infrared region with high optical power. The optical waveforms are first generated at telecom wavelength and then converted to the emitter wavelength through a sum frequency generation process. By adapting the pump laser frequency, the optical waveforms can be tuned to interact with a broad range of optical quantum emitters or qubits such as alkali atoms, trapped ions, rare earth ions, or fluorescent defects in solid-state matrices. Using this architecture, we were able to detect and study a single erbium ion in a nanoparticle. We also generated high bandwidth signals at 606 nm, which would enable frequency multiplexing of on-demand read-out Pr3+:Y2SiO5 quantum memories.

Bound-state-in-continuum guided modes in a multilayer electro-optically active photonic integrated circuit platform.

In many physical systems, the interaction with an open environment leads to energy dissipation and reduced coherence, making it challenging to control these systems effectively. In the context of wave phenomena, such lossy interactions can be specifically controlled to isolate the system, a condition known as a bound-state-in-continuum (BIC). Despite the recent advances in engineered BICs for photonic waveguiding, practical implementations are still largely polarization- and geometry-specific, and the underlying principles remain to be systematically explored. Here, we theoretically and experimentally study low loss BIC photonic waveguiding within a two-layer heterogeneous electro-optically active integrated photonic platform. We show that coupling to the slab wave continuum can be selectively suppressed for guided modes with different polarizations and spatial structure. We demonstrate a low-loss same-polarization quasi-BIC guided mode enabling a high extinction Mach-Zehnder electro-optic amplitude modulator within a single Si3N4 ridge waveguide integrated with an extended LiNbO3 slab layer. By elucidating the broad BIC waveguiding principles and demonstrating them in an industry-relevant photonic configuration, this work may inspire innovative approaches to photonic applications such as switching and filtering. The broader impact of this work extends beyond photonics, influencing research in other wave dynamics disciplines, including microwave and acoustics.

Ultra-high Q-factor quasi-BIC BaTiO3 metasurface for electro-optic modulation

Metasurfaces play a crucial role in trapping electromagnetic waves with specific wavelengths, serving as a significant platform for enhancing light–matter interactions. In all kinds of dynamic modulation metasurfaces, electro-optic modulation metasurfaces have attracted much attention due to its advantages of fast, stable and high efficiency. In order to respond to the extremely weak refractive index change of the electro-optical effect of the materials, the metasurfaces are required to support optical signals with high Q values. The quasi-bound state in the continuum (Q-BIC) is often used to enhance the light-field modulation capability of metasurfaces and to improve the modulation sensitivity of electro-optic modulators due to its ability to generate high Q-factor resonances. However, the design of an electro-optic modulation metasurface that facilitates the application of voltage and achieves modulation efficiency of nearly 100% is still in urgent need of development. In this study, single-crystal BTO metasurfaces are modeled using finite-difference time-domain method, and the structural symmetry is broken to introduce a Q-BIC resonance to generate a high Q-factor optical signal of 2.45 × 104 for high-depth electro-optic modulation. By simulating an applied electric field of 143 V/mm on the metasurface, a slight refractive index change of BTO of 8 × 10−4 was produced, leading to an electro-optical intensity modulation depth of 100%. Furthermore, the nanostructure of the metasurface was carefully designed to facilitate nano-fabrication and voltage application, and it is ideal for the development of low-power, CMOS-compatible, and miniaturized electro-optic modulation devices. Although the results of this study are based on simulations, they provide a crucial theoretical basis and guidance for the realization of efficient and realistic design of dynamic metasurfaces.

High-Speed Electro-Optic Modulators Based on Thin-Film Lithium Niobate.

Electro-optic modulators (EOMs) are pivotal in bridging electrical and optical domains, essential for diverse applications including optical communication, microwave signal processing, sensing, and quantum technologies. However, achieving the trifecta of high-density integration, cost-effectiveness, and superior performance remains challenging within established integrated photonics platforms. Enter thin-film lithium niobate (LN), a recent standout with its inherent electro-optic (EO) efficiency, proven industrial performance, durability, and rapid fabrication advancements. This platform inherits material advantages from traditional bulk LN devices while offering a reduced footprint, wider bandwidths, and lower power requirements. Despite its recent introduction, commercial thin-film LN wafers already rival or surpass established alternatives like silicon and indium phosphide, benefitting from decades of research. In this review, we delve into the foundational principles and technical innovations driving state-of-the-art LN modulator demonstrations, exploring various methodologies, their strengths, and challenges. Furthermore, we outline pathways for further enhancing LN modulators and anticipate exciting prospects for larger-scale LN EO circuits beyond singular components. By elucidating the current landscape and future directions, we highlight the transformative potential of thin-film LN technology in advancing electro-optic modulation and integrated photonics.

Integrated thin-film lithium niobate electro-optic frequency comb for picosecond optical pulse train generation

In recent years, high-performance thin-film lithium niobate (TFLN) electro-optic (EO) modulators boost the fast development of highly integrated, low loss, and large comb spacing EO frequency combs. Furthermore, ultra-short optical pulse trains (USOPTs) can be generated by the temporal domain compression of the optical frequency comb, which play an essential role in photonic sampling analog-to-digital conversion. Here, we demonstrate a flat and broadband EO frequency comb based on a packaged TFLN chip including a monolithic integrated intensity modulator, a phase modulator, and edge couplers. The 25 comb lines with a power fluctuation less than 3 dB are presented successfully. Moreover, we obtain a 10 GHz repetition rate USOPT, the pulse width of which is compressed to 2.67 ps. Our device may find its applications in the fields of ultrafast measurement, wavelength-division-multiplexing optical communication, or high-precision photonic sampling.

Nanophotonic integrated active-passive InP membrane devices and circuits fabricated using ArF scanner lithography

We present a novel fabrication approach to an integrated nanophotonic platform, based on a III-V membrane bonded to a Si substrate with benzocyclobutene (BCB). The process incorporates a hybrid lithography strategy combining deep-UV and electron-beam lithography on the same wafer. We report for the first time the usage of deep-UV scanner lithography for the fabrication of the active-passive tapers and sub-micron waveguides on the same wafer, which enables better critical dimension control, uniformity, and reproducibility. The platform uses an active-passive butt-joint interface and includes components such as distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers, electro-optical (EO) and electro-absorption (EA) modulators, and sub-micron ultra-confined passive waveguides, all monolithically integrated into a single membrane layer. The active devices have a heat sink achieved by ultra-thin BCB bonding. Lasers demonstrate up to 26 mW of optical power in the waveguide and a direct modulation bandwidth of up to 21 GHz. The modulators show static extinction up to 28.8 dB.

Phase Composition of HiVac-VPE Lithium Niobate Optical Waveguides Identified by Spectroscopic Investigations.

High-index contrast lithium niobate waveguides, fabricated by the High Vacuum Vapor-phase Proton Exchange (HiVac-VPE) technique, are very promising for increasing both the optical nonlinear and electro-optical efficiencies of photonic integrated devices. So as to play this role effectively, it is mandatory to know the crystallographic phase composition of waveguides and the position of protonated layers for appropriate tailoring and optimization based on the intended applications. In addition, the estimation of structural disorder and electro-optical properties of the waveguides are also of high interest. Benefiting from Raman spectroscopy, IR reflection, IR absorption, and UV-VIS absorption, the HxLi1-xNbO3 phase compositions, as well as the structural disorder in waveguides, were determined. Based on experimental data on the shift of the fundamental absorption edge, we have quantitatively estimated the electro-optic coefficient r13 in as-exchanged waveguides. The electro-optical properties of the waveguides have been found to be depending on the phase composition. The obtained results allow for reconsidering the proton exchange fabricating process of photonic nonlinear devices and electro-optic modulators based on high-index contrast channel waveguides on the LiNbO3 platform.

Photonic quasi-crystal fiber electro-optical modulator

The integration of graphene with optical fiber is considered to be a new interdisciplinary research hotspot for functional fiber. In this paper, an electro-optical modulator based on a six-fold Stampfli-type photonic quasi-crystal fiber (PQF) is theoretically proposed with a sandwiched graphene/hexagonal boron nitride/graphene (Gr/hBN/Gr) film covering all the hole walls. This design exhibits a strong light-graphene interaction with an excellent modulation depth of ∼64 dB mm−1 at 1550 nm by applying an external bias voltage (below 30 V) on both graphene layers. As the Fermi level of the graphene changes with voltage, the fiber shows ‘On’ and ‘Off’ states, serving well as a light-switch. For the modulator performance, the dependence of modulation depth on multiple factors is studied in terms of the layer numbers of graphene and hBN films, the incident wavelength, and the structure parameters. Interestingly, an attenuation peak occurs due to the epsilon-near-zero effect in graphene and shows a linear relationship between the wavelength and the Fermi level. This design provides a guidance for the integration of PQF and graphene, and holds great promise for future all-fiber systems.

High-speed mid-infrared silicon-based electro-optic modulator at 2 μm

We demonstrate the Mach-Zehnder interferometer (MZI) silicon-based electro-optic modulators in the short-wave mid-infrared 2 μm band. The waveguide structure and doping position of the devices are optimized by simulation. The devices are manufactured on a 220 nm silicon-on-insulator (SOI) platform, and are measured through self-built short-wave mid-infrared measurement platform. The device with the length of 3.5 mm has a measured modulation efficiency of 1.853 V cm at 3 V reverse bias. The highspeed characterization is also performed, and the device with the length of 3.5 mm has a data rate of over 20 Gb/s at the voltage swing of 2.8 Vpp with on-off keying (OOK) modulation formats. The modulation speed of the 2 mm device can reach over 40 Gb/s with 4-level pulse amplitude modulation (PAM-4) formats at a voltage swing of 2.5 Vpp.

Effect of transparent conductive layers on the functionality of liquid crystal devices: Comparison of AZO, FTO and ITO

The integration of highly transparent and highly conductive layers plays a crucial role in the advancement of various next-generation optoelectronic technologies. Here, we demonstrate a comparison of optical, electrical and wettability properties of Aluminum-doped Zinc Oxide (AZO) deposited by Atomic Layer Deposition Technique (ALD) with commercially available Fluorine-doped Tin Oxide (FTO) and Indium-doped Tin Oxide (ITO) Transparent Conductive Oxide (TCO) layers. Their impact on the electro-optical modulation behavior when applied in Liquid Crystal (LC) device assemblies are compared and discussed. The AZO layers performance prove that are fully competitive to the commercial FTO and ITO layers and verify the high demand for the next generation indium tin oxide (ITO)-free technology.

Nanoimprinting Solution-Derived Barium Titanate for Electro-Optic Metasurfaces.

Electro-optic metasurfaces have demonstrated significant potential in enhancing the modulation speed and efficiency for fast and large-scale free-space optical devices. Barium titanate has a strong electro-optic Pockels coefficient, but its availability in thin-film form is restricted due to costly growth processes or low thickness. Here, we fabricated active metasurfaces using an etch-free bottom-up process with sol-gel-based polycrystalline barium titanate with a large electro-optic coefficient similar to bulk lithium niobate. We achieve strong hybrid Mie/surface lattice resonances with a quality-factor of 200 at 633 nm wavelength, enhancing the light-matter interaction and therefore the Pockels effect. The metasurface transmission is electro-optically modulated with up to 5 MHz driving frequency at low voltages of less than 1 V thanks to resonant enhancement of the modulation amplitude by 2 orders of magnitude. This successful demonstration of electro-optic modulation in nanoimprinted barium titanate structures paves the way for low-cost and large-scale free-space modulators or tunable metalenses.

Dual-frequency and multi-linewidth laser based on self-injection locking for optical gyroscopes

Diverse resonant optical gyroscopes (ROG) exhibit unique lasers requirements and the optimal method involves integrating multiple functions into a singular laser device. Here, we introduce a simple dual-frequency multi-linewidth laser configuration for resonant optical gyroscopes, which uses self-injection locking technology for frequency stabilization and linewidth narrowing, generating the first narrow linewidth laser beam. Then, based on self-injection locking technology, careful adjustment of the ring cavity length has been used to achieve the second laser with Brillouin frequency shift and further narrowing of laser linewidth. In addition, external phase modulation is performed at another light port by loading the radio frequency voltage signal onto the electro-optic phase modulator to achieve the purpose of spectral broadening, which is the third broad-spectrum laser. Finally, we have successfully applied the proposed dual-frequency multi-linewidth laser in both the narrow-linewidth laser-driven traditional ROG and the broadband laser-driven ROG. This work is of significant importance for improving the versatility of lasers, reducing the testing cost and size of gyroscope. Next, the focus of future work will translate the proposed laser design to integrated photonics.

Extremely Weak Electro-Optic Kerr Effect in Methyl Silicone Oils.

The electro-optical properties of methyl silicone oils with viscosities ranging from 10 to 10,000 cSt have been studied extensively to verify their suitability as immersion liquids. Immersion liquids are often used in nonlinear optics to protect hygroscopic crystals from moisture, reduce multiple reflections, and protect against electrical breakdown. However, the lack of experimental data makes it difficult to select an optimal liquid that does not exhibit a significant electro-optical Kerr effect in the fringing electric field around the electrodes on the crystal. Electro-optical measurements were performed using an improved dynamic polarimetric method, which compensates for the measurement errors caused by inaccurate positioning of the electro-optical modulator's operating point on its transmission characteristics. The values of the Kerr coefficient ranged from -8.83 × 10-16 to -6.79 × 10-16 m V-2 for all oil samples, at temperatures from 25 to 80 °C and frequencies from 67 to 1017 Hz. These exceptionally low values, together with a low dielectric constant, very good transparency, and high chemical stability, make methyl silicone oils highly suitable as immersion liquids. The Kerr coefficient and other electro-optical coefficients increased with increasing temperature. This unusual result cannot be adequately explained by Buckingham's molecular theory of the Kerr effect.

Can 2D Semiconductors Be Game-Changers for Nanoelectronics and Photonics?

2D semiconductors have interesting physical and chemical attributes that have led them to become one of the most intensely investigated semiconductor families in recent history. They may play a crucial role in the next technological revolution in electronics as well as optoelectronics or photonics. In this Perspective, we explore the fundamental principles and significant advancements in electronic and photonic devices comprising 2D semiconductors. We focus on strategies aimed at enhancing the performance of conventional devices and exploiting important properties of 2D semiconductors that allow fundamentally interesting device functionalities for future applications. Approaches for the realization of emerging logic transistors and memory devices as well as photovoltaics, photodetectors, electro-optical modulators, and nonlinear optics based on 2D semiconductors are discussed. We also provide a forward-looking perspective on critical remaining challenges and opportunities for basic science and technology level applications of 2D semiconductors.

Lithium Niobate Electro-Optic Modulation Device without an Overlay Layer Based on Bound States in the Continuum.

Electro-optic modulation devices are essential components in the field of integrated optical chips. High-speed, low-loss electro-optic modulation devices represent a key focus for future developments in integrated optical chip technology, and they have seen significant advancements in both commercial and laboratory settings in recent years. Current electro-optic modulation devices typically employ architectures based on thin-film lithium niobate (TFLN), traveling-wave electrodes, and impedance-matching layers, which still suffer from transmission losses and overall design limitations. In this paper, we demonstrate a lithium niobate electro-optic modulation device based on bound states in the continuum, featuring a non-overlay structure. This device exhibits a transmission loss of approximately 1.3 dB/cm, a modulation bandwidth of up to 9.2 GHz, and a minimum half-wave voltage of only 3.3 V.