High-speed mid-infrared silicon-based electro-optic modulator at 2 μm

Abstract

We demonstrate the Mach-Zehnder interferometer (MZI) silicon-based electro-optic modulators in the short-wave mid-infrared 2 μm band. The waveguide structure and doping position of the devices are optimized by simulation. The devices are manufactured on a 220 nm silicon-on-insulator (SOI) platform, and are measured through self-built short-wave mid-infrared measurement platform. The device with the length of 3.5 mm has a measured modulation efficiency of 1.853 V cm at 3 V reverse bias. The highspeed characterization is also performed, and the device with the length of 3.5 mm has a data rate of over 20 Gb/s at the voltage swing of 2.8 Vpp with on-off keying (OOK) modulation formats. The modulation speed of the 2 mm device can reach over 40 Gb/s with 4-level pulse amplitude modulation (PAM-4) formats at a voltage swing of 2.5 Vpp.