Electronic Structure Calculations Research Articles

Optical response of Zr[formula omitted]CO[formula omitted]/MoS[formula omitted] van der Waals heterostructures calculated using first-principles calculations

In the field of material science, the search for a material with an optimal bandgap of approximately 1.40 eV that can act as an efficient photocatalyst for water splitting using solar spectrum irradiation is a noble mission. In this article, we explore the structural, electronic structure, optical and photocatalytic properties of Zr2CO2/MoS2 vdW heterostructures. Our results demonstrates that the Zr2CO2/MoS2 vdW heterostructure can be reliably synthesized. This is due to a minimal lattice mismatch of less than 3%, a negative adhesion energy of -4.23 meV/Å 2, and inherent dynamic stability. The electronic band structure calculations indicate that the Zr2CO2/MoS2 vdW heterostructure is an indirect bandgap semiconductor. We found that the conduction band minimum (CBM) and valance band maximum (VBM) of the heterostructure are located in different monolayers. Furthermore, under −2% biaxial strain a transition from type-I to type-II (staggered) band alignment occurred. Stacking 2D MoS2 on the Zr2CO2 monolayer results in a vdW heterostructure, and as a result, the HSE calculated bandgap of the Zr2CO2/MoS2 vdW heterostructure in most stable configuration lying in the ideal range for photocatalytic applications. We also studied the heterostructure’s optical properties to understand its response to incident photons with energies up to 14 eV. Based on our findings, Zr2CO2/MoS2 heterostructures are desirable for optoelectronic device applications operated in visible range. Our research offers fresh recommendations for developing novel, highly effective photocatalytic compounds with numerous optical device applications.

Ni thin-films on Pd surfaces and effects of oxygen adsorption: Ab-initio study of structures, electronic properties, magnetic anisotropy

We report first-principles electronic structure calculations of the structural, electronic, and magnetic properties of model epitaxial layers consisting of nickel (Ni) atomic layers deposited on palladium (Pd) substrate, i.e., Ni(001)m∣Pd(001)n where m=1,2,6 and n=3,10, are layer thicknesses. We also investigate the effect of oxygen adsorption on the calculated properties. We found variation in magnetization of between ≈0.6μB to 1.00 μB across the nickel layers. Also, finite magnetic moments albeit of small values of between 0.2 μB and 0.3 μB is found on the Pd at the interface. This magnetic moment on an otherwise non-magnetic Pd atoms has been adduced to interfacial strain due to lattice mismatch between the Ni and Pd layers at the Ni|Pd interface. The effect of adsorbed oxygen on the Nim∣Pdn is that it increases the magnetic moment on the nickel layers. Also, regarding the magnitude of magnetic anisotropy energy (MAE), we found a high perpendicular values of 1.63 meV and 1.37 meV per unit cell respectively for Nim∣Pd10 (m=2,6) which are relatively higher than those reported for other transition metal epitaxial layers. However, the presence of oxygen atom on the Ni∣Pd changes the direction and magnitude of MAE. Indeed, O adsorption favours or enhances in-plane magnetization direction depending on the thickness of the Ni layers for a fixed Pd thickness. Plots of local density of states (LDOS) which include the effect of spin–orbit coupling (SOC), show that in the case of Ni∣Pd having perpendicular MAE, there appears a new SOC-induced electronic states below and above the Fermi level. These states appears to stabilize this type of magnetic anisotropy. On the other hand, in-plane MAE is characterized by SOC-induced localized states below the Fermi level (EF) as well as the lowering of the DOS at the EF. Our work explores the physical, magnetic and electronic properties that may be useful in designing Ni∣Pd-based superlattices for magnetic or spintronic applications.

"On-the-Fly" Nonadiabatic Dynamics Simulation on the Ultrafast Photoisomerization of a Molecular Photoswitch Iminothioindoxyl: An RMS-CASPT2 Investigation.

Iminothioindoxyl (ITI) is a new class of photoswitch that exhibits many excellent properties including well-separated absorption bands in the visible region for both conformers, ultrafast Z to E photoisomerization as well as the millisecond reisomerization at room temperature for the E isomer, and switchable ability in both solids and various solvents. However, the underlying ultrafast photoisomerization mechanism at the atomic level remains unclear. In this work, we have employed a combination of high-level RMS-CASPT2-based static electronic structure calculations and nonadiabatic dynamics simulations to investigate the ultrafast photoisomerization dynamics of ITI. Based on the minimum-energy structures, minimum-energy conical intersections, linear interpolation internal coordinate paths, and nonadiabatic dynamics simulations, the overall photoisomerization scenario of ITI upon excitation is established. Upon excitation around 416 nm, the molecule will be excited to the S2 state considering its close energy to the experimentally measured absorption maximum and larger oscillator strength, from which ultrafast decay of S2 to S1 state can take place efficiently with a time constant of 62 fs. However, the photoisomerization is not likely to complete in the S2 state since the dihedral associated with the Z to E isomerization changes little during the relaxation. Upon relaxing to the S1 state, the molecule will decay to the S0 state ultrafast with a time constant of 232 fs. In contrast, the decay of the S1 state is important for the isomerization considering that the dihedral related to the isomerization of the hopping structures is close to 90°. Therefore, the S1/S0 intersection region should be important for the isomerization of ITI. Arriving at the S0 state, the molecule can either go back to the original Z reactant or isomerize to the E products. At the end of the 500 fs simulation time, the E configuration accounts for nearly 37% of the final structures. Moreover, the photoisomerization mechanism is different from the isomerization mechanism in the ground state; i.e., instead of the inversion mechanism in the ground state, the photoisomerization prefers the rotation mechanism. Our results not only agree well with previous experimental studies but also provide some novel insights that could be helpful for future improvements in the performance of the ITI photoswitches.

First-principles investigation of near-field energy transfer between localized quantum emitters in solids

We present a predictive and general approach to investigate near-field energy transfer processes between localized defects in semiconductors, which couples first-principles electronic structure calculations and a nonrelativistic quantum electrodynamics description of photons in the weak-coupling regime. The approach is general and can be readily applied to investigate broad classes of defects in solids. We apply our approach to investigate an exemplar point defect in an oxide, the F center in MgO, and we show that the energy transfer from a magnetic source, e.g., a rare-earth impurity, to the vacancy can lead to spin nonconserving long-lived excitations that are dominant processes in the near field, at distances relevant to the design of photonic devices and ultrahigh dense memories. We also define a descriptor for coherent energy transfer to predict geometrical configurations of emitters to enable long-lived excitations, that are useful to design optical memories in semiconductor and insulators. Published by the American Physical Society 2024

I-PI 3.0: A flexible and efficient framework for advanced atomistic simulations.

Atomic-scale simulations have progressed tremendously over the past decade, largely thanks to the availability of machine-learning interatomic potentials. These potentials combine the accuracy of electronic structure calculations with the ability to reach extensive length and time scales. The i-PI package facilitates integrating the latest developments in this field with advanced modeling techniques thanks to a modular software architecture based on inter-process communication through a socket interface. The choice of Python for implementation facilitates rapid prototyping but can add computational overhead. In this new release, we carefully benchmarked and optimized i-PI for several common simulation scenarios, making such overhead negligible when i-PI is used to model systems up to tens of thousands of atoms using widely adopted machine learning interatomic potentials, such as Behler-Parinello, DeePMD, and MACE neural networks. We also present the implementation of several new features, including an efficient algorithm to model bosonic and fermionic exchange, a framework for uncertainty quantification to be used in conjunction with machine-learning potentials, a communication infrastructure that allows for deeper integration with electronic-driven simulations, and an approach to simulate coupled photon-nuclear dynamics in optical or plasmonic cavities.

Absorption Intensities of Organic Molecules from Electronic Structure Calculations versus Experiments: the Effect of Solvation, Method, Basis Set, and Transition Moment Gauge.

Recently, we derived experimental oscillator strengths (OSs) from well-defined UV-visible absorption spectral peaks of 100 molecules in solution. Here, we focus on a subset of transitions with the highest reliability to further benchmark the OSs from several wave function methods and density functionals. We consider multiple basis sets, transition moment gauges (length, velocity, and mixed), and solvent corrections. Most transitions in the comparison set come from conjugated molecules and have π → π* character. We use an automated algorithm to assign computed transitions to experimental bands. OSs computed using the Tamm-Dancoff approximation (TDA), CIS, or EOM-CCSD exhibited a strong gauge dependence, which is diminished in linear response theories (TD-DFT, TD-HF, and to a smaller degree LR-CCSD). OSs calculated from TD-DFT with PCM solvent models are systematically larger than apparent OSs derived from experimental spectra. For example, fcomp from hybrid functionals and PCM have mean absolute errors that are ∼10% of n·fexp, where n is a solvent refractive index factor that arises from the energy flux of the radiation field in a dielectric (solvent). Theoretical cavity field corrections considering spherical cavities do not improve the agreement between computed and experimental data. Corrections that account for the molecular shape and the direction of transition dipole moments, or that explicitly account for the effect of solvent molecules on the local field, should be more appropriate.

Solution and solubility of H atoms at the W/Cu interface.

Metallic interfaces are locations where hydrogen (H) is expected to segregate and lead to the formation and stabilization of defects. This work focuses on the tungsten/copper (W/Cu) interface built according to theWbcc(001)/Cuhcp(112-0)orientation. H behavior is subsequently determined at the interface and in its vicinity with electronic structure calculations based on the density functional theory (DFT). The electronic and vibrational properties determined in this way followed a thermodynamic treatment to deliver the solubility of H as a function of the temperature and chemical potential. The 96 interstitial positions we investigated reveal that H predominantly occupies the octahedral (Oh) sites in the copper network. Reversely, H exclusively occupies the tetrahedral (Td) sites in the tungsten network. The solubility of H is higher in the interface plane where both octahedral and tetrahedral sites are occupied. Despite this work is a first step toward kinetic modeling of hydrogen transport across the W/Cu interface, we conclude that theWbcc(001)/Cuhcp(112-0)would behave like a sink where hydrogen isotopes could accumulate.

Computational insights into popsilicene as a new planar silicon allotrope composed of 5–8–5 rings

Silicon-based two-dimensional (2D) materials have garnered significant attention due to their unique properties and potential applications in electronics, optoelectronics, and other advanced technologies. Here, we present a comprehensive investigation of a novel silicon allotrope, Popsilicene (Pop-Si), derived from the structure of Popgraphene. Using density functional theory and ab initio molecular dynamics simulations, we explore the thermal stability, mechanical and electronic properties, and optical characteristics of Pop-Si. Our results demonstrate that Pop-Si exhibits good thermal stability at 1000 K. Electronic structure calculations reveal that Pop-Si is metallic, with a high density of states at the Fermi level. Furthermore, our analysis of the optical properties indicates that Pop-Si has pronounced UV–Vis optical activity, making it a promising candidate for optoelectronic devices. Mechanical property assessments show that Pop-Si has Young’s modulus ranging from 10 to 92 GPa and a Poisson’s ratio of 0.95. These results combined suggest its potential for practical applications.

Efficient Mixed-Precision Matrix Factorization of the Inverse Overlap Matrix in Electronic Structure Calculations with AI-Hardware and GPUs.

In recent years, a new kind of accelerated hardware has gained popularity in the artificial intelligence (AI) community which enables extremely high-performance tensor contractions in reduced precision for deep neural network calculations. In this article, we exploit Nvidia Tensor cores, a prototypical example of such AI-hardware, to develop a mixed precision approach for computing a dense matrix factorization of the inverse overlap matrix in electronic structure theory, S-1. This factorization of S-1, written as ZZT = S-1, is used to transform the general matrix eigenvalue problem into a standard matrix eigenvalue problem. Here we present a mixed precision iterative refinement algorithm where Z is given recursively using matrix-matrix multiplications and can be computed with high performance on Tensor cores. To understand the performance and accuracy of Tensor cores, comparisons are made to GPU-only implementations in single and double precision. Additionally, we propose a nonparametric stopping criteria which is robust in the face of lower precision floating point operations. The algorithm is particularly useful when we have a good initial guess to Z, for example, from previous time steps in quantum-mechanical molecular dynamics simulations or from a previous iteration in a geometry optimization.

Making Peace with Random Phases: Ab Initio Conical Intersection Quantum Dynamics in Random Gauges.

Ab initio modeling of conical intersection wave packet dynamics is crucial for various photochemical, photophysical, and biological processes. However, adiabatic electronic states obtained from electronic structure computations involve random phases, or more generally, random gauge fixings, which cannot be directly used in the modeling of nonadiabatic wave packet simulations. Here we develop a random-gauge local diabatic representation that allows an exact modeling of conical intersection dynamics directly using the adiabatic electronic states with phases randomly assigned during the electronic structure computations. Its utility is demonstrated by an exact ab initio modeling of the two-dimensional Shin-Metiu model with and without an external magnetic field. Our results provide a simple approach to integrating the electronic structure computations into nonadiabatic quantum dynamics, thus paving the way for ab initio modeling of conical intersection dynamics.

Direct Z-scheme ZnS/HfS2 heterojunction for photocatalytic overall water splitting with high carrier mobility

The electronic and photocatalytic properties of a type-II ZnS/HfS2 heterojunction are comprehensively analyzed through first-principles calculations in this paper. By calculating the binding energy and phonon spectrum of five potential stacking patterns, the stable structure of the ZnS/HfS2 heterojunction is determined. The electronic structure calculations indicate that the heterojunction has a type-II alignment with a 1.26 eV band gap. The heterojunction exhibits high carrier mobilities (4387.36 and 9561.39 cm2V–1S−1 for X and Y directions). The photocatalytic water splitting process of the heterojunction can be explained by the direct Z-scheme mechanism. The built-in electric field enables rapid recombination of electron-hole pairs at CBM and VBM, while the hydrogen evolution reaction and oxygen evolution reaction can separately be achieved at the ZnS layer and HfS2 layer to complete the overall water splitting. The free energy analysis indicates that the ZnS/HfS2 heterojunction has high activity for overall water splitting under illumination. Moreover, the calculated solar-to-hydrogen efficiency of the heterojunction reaches 30%, ensuring its photocatalytic performance. Remarkably, the type-II alignment is maintained and the catalytic performance can be further improved under biaxial strain because of the enhanced optical absorption in visible light and the reduced band gap. This work reveals that ZnS/HfS2 heterojunction is a potentially novel photocatalytic material for efficient overall water splitting.

Synthesis, structure, supramolecular assembly inspection by Hirshfeld surface analysis, DFT study and molecular docking inspection of 4,5-bis(2-chlorophenyl)-8a-phenylhexahydropyrimido[4,5-d]pyrimidine-2,7(1H,3H)-dithione

We studied the three-component condensation of 2-chloraldehyde, acetophenone, and thiourea in conjunction with HCl, resulting in the formation of a new compound: 4,5-bis(2-chlorophenyl)-8a-phenylhexahydropyrimido[4,5-d]pyrimidine-2,7(1H,3H)-dithione (CPPD). The compound's structure was affirmed via X-ray diffraction study. The asymmetric unit contained two molecules that were independent relative to crystallography and an ethanol solvent. The difference between independent molecules was explored by dihedral angles between similar rings in both molecular. The difference between molecules was further explored by molecular overlay plot. The supramolecular assembly was supported via diverse intermolecular interactions which were studied through the use of Hirshfeld surface analysis. Electronic structure computations were carried out at the ωb97xd/tzvp level. Natural bonding orbital (NBO), and FMO study reveal reactivity and charge transfer mechanisms within the compound. Furthermore, the nature of bonding in the present molecule is characterized through quantum theory of atoms in molecules (QTAIM), ELF, and LOL studies. Ab-initio molecular dynamic (AIMD) revealed the kinetic and thermodynamic stability at 300 K. The DFT results have excellent correlation with experimental data. The molecular docking and molecular dynamics simulation further revealed the compound to get deep access in the active pocket of type 2 anti-diabetes GLUT4 protein. This was validated by the stable dynamics as demonstrated by the uniform behavior of the root mean square deviation (RMSD) plot. The root mean square fluctuation (RMSF) also showed stable interactions with amino acids in the presence of the compound. Further, simulation trajectories on the basis of binding free energies indicate the significant role of van der Waals force in the formation of the intermolecular docked complex. This concluded the compound might be a potent structure for the development of anti-diabetic compounds.

On the origin of low-valent uranium oxidation state

The significant interest in actinide bonding has recently focused on novel compounds with exotic oxidation states. However, the difficulty in obtaining relevant high-quality experimental data, particularly for low-valent actinide compounds, prevents a deeper understanding of 5f systems. Here we show X-ray absorption near-edge structure (XANES) measurements in the high-energy resolution fluorescence detection (HERFD) mode at the uranium M4 edge for the UIII and UIV halides, namely UX3 and UX4 (X = F, Cl, Br, I). The spectral shapes of these two series exhibit clear differences, which we explain using electronic structure calculations of the 3d-4f resonant inelastic X-ray scattering (RIXS) process. To understand the changes observed, we implemented crystal field models with ab initio derived parameters and investigated the effect of reducing different contributions to the electron-electron interactions involved in the RIXS process. Our analysis shows that the electron-electron interactions weaken as the ligand changes from I to F, indicative of a decrease in ionicity both along and between the UX3 and UX4 halide series.

(Invited) Reshaping Light with Hybrid Quantum Dot: Molecule Systems

Photon upconversion is an energy conversion process wherein a material absorbs two or more low-energy photons and uses their energy to generate high-energy photons. Upconversion systems that convert near-infrared light into the visible range can address current challenges in solar energy capture and near-infrared sensor design while materials that operate at higher energy, producing UV photons from visible light, can enable applications in photocatalysis and light-based 3D printing. Due to their high extinction coefficients and size-tunable optical properties, quantum dots have emerged as ideal photosensitizers for photon upconversion systems. In these systems, light absorbed by a quantum dot is passed to a molecule at its surface, placing the molecule into a spin-triplet state. Upconversion is achieved when two molecules in their triplet state encounter one another and undergo triplet fusion, a process that deexcites one molecule and promotes the other to a high-energy, emissive spin-singlet state. In this presentation, I will present spectroscopic measurements and electronic structure calculations that identify energy transfer rates and key intermediates involved in two quantum dot systems that respectively demonstrate red-to-blue and blue-to-UV photon upconversion. In the first system, which consists of silicon quantum dots functionalized with anthracene ligands, we find that by controlling the chemical structure of molecular tethers that covalently link anthracene to silicon, we can produce strongly coupled states wherein excited charge carriers are shared between silicon and anthracene. By controlling the energy of these states, we can optimize the system’s performance, achieving an upconversion quantum yield of 17.2%. In the second system, we use CsPbBr3 perovskite quantum dots to drive triplet energy transfer to naphthalene ligands. This energy transfer process is found to be highly sensitive to the structure of the chemical linker that binds naphthalene to CsPbBr3, which we attribute to modulation of the degree of wavefunction overlap between the states of the quantum dot energy donor and naphthalene energy acceptor.

Photodetachment photoelectron spectroscopy shows isomer-specific proton-coupled electron transfer reactions in phenolic nitrate complexes

The oxidation of phenolic compounds is one of the most important reactions prevalent in various biological processes, often explicitly coupled with proton transfers (PTs). Quantitative descriptions and molecular-level understanding of these proton-coupled electron transfer (PCET) reactions have been challenging. This work reports a direct observation of PCET in photodetachment (PD) photoelectron spectroscopy (PES) of hydrogen-bonded phenolic (ArOH) nitrate (NO3−) complexes, in which a much slower rising edge provides a spectroscopic signature to evidence PCET. Electronic structure calculations unveil the PCET processes to be isomer-specific, occurred only in those with their HOMOs localized on ArOH, leading to charge-separated transient states ArOH•+·NO3− triggered by ionizing phenols while simultaneously promoting PT from ArOH•+ to NO3−. Importantly, this study showcases that gas-phase PD-PES is a generic means enabling to identify PCET reactions with explicit structural and binding information.

Design of Charge Transfer Donor-Acceptor Co-Crystals with Long Lived Charge Carriers

Organic donor-acceptor co-crystals with long exciton lifetimes have emerged as a promising class of semiconductors for their unique photophysical properties. These are crystalline, single-phase materials composed of two or more different compounds in a stoichiometric ratio, providing a platform for unveiling the structure–property relationships at a molecular level. Importantly, co-crystals that are packed through π stacking interactions have the ability to form charge transfer (CT) excitons within donor-acceptor pairs.1,2,3 We hypothesize that co-crystals with a high degree of CT will have longer exciton lifetimes. Therefore, we design and synthesized of new co-crystals using derivatives of N,N-bis(3-pentyl)-perylene-3,4:9,10-bis(dicarboximide) (PDI, acceptor) with a series of donor molecules, including peri-xanthenoxanthene (PXX), perylene, and triphenylene. High quality single crystals were isolated by slow evaporation at room temperature from suitable solvent mixtures. Their crystal structures were successfully refined by single-crystal X-ray diffraction and the phase purity was validated by powder diffraction. Crystal structures revealed that the driving force for forming these co-crystals is π...π stacking. We measured diffuse reflectance UV/visible spectra of each of these co-crystals and compared with computed spectra to assign the observed electronic transitions. DFT calculations provide additional insights into the nature of the excited state CT interactions which can be derived from ground state electronic structure calculations. Transient absorption measurements were conducted to understand their long exciton lifetime for each of as synthesized co-crystals. We conclude that this study supported our previous hypothesis and such materials are potentially useful in applications ranging from photovoltaics and opto-electronics to photocatalysis. References 1) A. Abou Taka, J. E. Reynolds Iii, N. C. Cole-Filipiak, M. Shivanna, C. J. Yu, P. L. Feng, et al. Phys. Chem. Chem. Phys. 2023, 25, 27065.2) L. Sun, Y. Wang, F. Yang, X. Zhang and W. Hu. Adv. Mater. 2019, 31, 1902328.3) I. Schlesinger, N. E. Powers-Riggs, J. L. Logsdon, Y. Qi, S. A. Miller, R. Tempelaar, et al. Chem. Sci., 2020, 11, 9532–9541.

Machine Learning Accelerated Identification of Bifunctional Active Sites in Metal-Organic Framework Derived Metal Oxide Heterostructures for High-Performance Zinc-Air Batteries

The demand for electrochemical energy storage (ESS) systems and their market size has drastically increased in many applications ranging from portable devices through electric vehicles to large-scale grid systems over the past decades. Yet, a more advanced ESS is required due to the safety issues and limited energy density of currently commercialized lithium-ion batteries (LIBs) for wide and matured applications. As a solution to this challenge, zinc-air batteries (ZABs) have gained tremendous attention due to their high energy density, low cost, environmental friendliness, and much lower fire risk characteristics. ZABs utilize oxygen from the atmosphere at their cathode during discharge, where the atmospheric oxygen is reduced to hydroxide via an oxygen reduction reaction (ORR). On the other hand, hydroxide is released as oxygen via oxygen evolution reaction (OER) during charge. The fact that oxygen is drawn directly from the air enables high gravimetric and volumetric energy densities of ZABs compared to those of commercial LIBs. However, the sluggish kinetics of the four-electron transfer steps in ORR and the mass transport of oxygen in OER remain major challenges for the practical application of ZABs. Meanwhile, precious metal-based catalysts such as Pt/C and RuO2 are known to have good catalytic activity towards ORR and OER. However, the integration of different catalysts into the same cathode is very difficult. Additionally, the high cost and natural scarcity of novel metals limit their usage for practical applications.We synthesized a bifunctional CoO/Mn3O4 heterostructure (CMH) OER/ORR electrocatalyst which was derived from metal-organic framework (MOF) for excellent activities in ZABs. The CMH cathode exhibited high ORR and OER performances, as demonstrated by the higher ORR current density than that of the Pt/C catalyst as well as the low OER overpotential exceeding those of the RuO2 catalyst. Remarkably, atomic structures of the CMH were elucidated using global optimization of genetic algorithm integrated with the machine learning force field. By adopting first-principles electronic structure calculations, we further revealed the charge transfer and active sites for both reactions in the identified heterojunction. Furthermore, assembling CMH cathode and Zn metal anode into a ZAB full-cell configuration achieves a ~5.5-fold higher energy density of 879 Wh kg-1 exceeding those of commercial lithium-ion batteries (LIBs), a high-discharge outstanding power density that is 1.39 times higher than novel metal catalysts, and robust cycle stability with negligible voltage decay which is far superior to that of benchmark Pt/C+RuO2 electrocatalysts.

Reduced thermal conductivity and enhanced TE performance in CrSb2 via Fe-Bi co-substitution

The efficiency of thermoelectric (TE) technology relies on the performance of TE materials. Substitution with heavy elements is an effective strategy in TE for enhancing phonon scattering without much affecting electrical transport properties. However, selecting suitable dopants to achieve a high TE figure-of-merit (ZT) poses a significant challenge. Thus, in this study, the efficacy of combined (Fe and Bi) co-substitution in CrSb2 is investigated as a promising strategy to enhance ZT by lowering thermal conductivity. A series of co-substituted Cr1−x Fe x BiySb2−y (x = 0, 0.25, 0.50, 0.75, 1 and y = 0.10, 0.15, 0.20,0.25) samples were synthesized via furnace reaction followed by spark plasma sintering technique. Phase analysis and temperature dependence TE transport properties were systematically studied on synthesized samples. Furthermore, to analyze the impact of disorder induced by Bi/Fe substitution, electronic structure calculation was performed using the projector augmented-wave method. Notably, Cr0.75Fe0.25Bi0.15Sb1.85 exhibited a low thermal conductivity of ∼2.5 W m−1 K−1 at 300 K, which reduced to half compared to that of pristine CrSb2 (∼5 W m−1 K−1). This reduction is attributed to the introduction of significant mass fluctuations and point defects along with the presence of Bi at grain boundaries by co-substitution. Consequently, a remarkable 90% enhancement in ZT (∼0.021) at 350 K was achieved for Cr0.75Fe0.25Bi0.15Sb1.85 compared to that of pristine CrSb2 (ZT ∼ 0.012). This study can provide valuable insights into the rational design of effective dopants in other TE materials also.

Pressure induced structural and electronic band transition in CsPbBr3

Cesium lead bromide (CsPbBr3) is a prominent halide perovskite with extensive optoelectronic applications. In this study, we report the pressure modulation of CsPbBr3’s crystal structure and electronic properties at room temperature up to 5 GPa. We have observed a crystal structure transition from the orthorhombic Pnma space group to a new monoclinic phase in the space group P21/c at 2.08 GPa. The structure is associated with ~8% of density jump across the transition boundary. DFT calculations have suggested that the structure transition leads to a change in the electronic band structure, and there is an emergent indirect bandgap at the Pnma-P21/c phase transition boundary at 2.08 GPa. Across the transition boundary, the electronic band gap of CsPbBr3 increased from 2.07 eV to 2.38 eV, which explains its pressure-induced color change. Our study demonstrates the importance of using in-situ crystal structure in the electronic band structure calculations in halide perovskites.

Deep learning tight-binding approach for large-scale electronic simulations at finite temperatures with ab initio accuracy

Simulating electronic behavior in materials and devices with realistic large system sizes remains a formidable task within the ab initio framework due to its computational intensity. Here we show DeePTB, an efficient deep learning-based tight-binding approach with ab initio accuracy to address this issue. By training on structural data and corresponding ab initio eigenvalues, the DeePTB model can efficiently predict tight-binding Hamiltonians for unseen structures, enabling efficient simulations of large-size systems under external perturbations such as finite temperatures and strain. This capability is vital for semiconductor band gap engineering and materials design. When combined with molecular dynamics, DeePTB facilitates efficient and accurate finite-temperature simulations of both atomic and electronic behavior simultaneously. This is demonstrated by computing the temperature-dependent electronic properties of a gallium phosphide system with 106 atoms. The availability of DeePTB bridges the gap between accuracy and scalability in electronic simulations, potentially advancing materials science and related fields by enabling large-scale electronic structure calculations.