Electron Mobility Research Articles

Amorphous Structure Benefits in MgV2O4/V2O3 Composites for Zinc-Ion Storage: An Integration of Computational and Experimental Studies.

This study investigates the electrochemical properties of MgV2O4/V2O3 composites for Aqueous Zinc-Ion Batteries (AZIBs) using both Density Functional Theory (DFT) calculations and experimental validation. DFT analysis reveals significant electron mobility and reactivity at the MgV2O4/V2O3 interface, enhancing Zn2+ storage capabilities. This theoretical prediction is confirmed experimentally by synthesizing a novel MgV2O4/V2O3 composite that demonstrates superior electrochemical performance compared to pristine phases. Notably, the transition of the MgV2O4/V2O3 composite into an amorphous structure during electrochemical cycling is pivotal, providing enhanced diffusion pathways and increased conductivity. The composite delivers a consistent specific capacity of 330.2 mAh g-1 over 50 cycles at 0.1 A g-1 and maintains 152.7 mAh g-1 at an elevated current density of 20 A g-1 after 2000 cycles, validating the synergy between DFT insights and experimental outcomes, and underscoring the potential of amorphous structures in enhancing battery performance.

Ge-Doped Boron Nitride Nanoclusters Functionalized with Amino Acids for Enhanced Binding of Bisphenols A and Z: A Density Functional Theory Study.

This study uses density functional theory to investigate boron nitride nanoclusters functionalized with amino acids for enhanced binding of bisphenols A (BPA) and Z (BPZ) to mimic the estrogen-related receptor gamma. Three categories of nanoclusters were examined: pristine B12N12, and those which were germanium-doped for boron or nitrogen. The study reveals that hydrogen bonding patterns and molecular stability are significantly influenced by the type of functional group and the specific amino acids involved. Ge-doping generally enhances the binding stability and spontaneity of the nanocluster-amino acid-bisphenol complexes, with Glu 275 emerging as the most stable binding site. The analysis of electronic properties such as energy gap, ionization potential, electron affinity, and chemical hardness before and after bisphenol binding indicates a general trend of increased reactivity, particularly in Ge-doped nanoclusters. The findings highlight the potential of these nanocluster composites in applications requiring high reactivity and electron mobility, such as pollutant removal and drug delivery.

Theoretical prediction of holes and electrons mobility in coronene and perchlorocoronene crystals: Application of the Marcus–Jortner–Levich Theory

The study focused on theoretically predicting charge carrier mobilities in coronene and perchlorocoronene crystals using the Marcus–Levich–Jortner approach. By analyzing charge transfer integrals and considering hopping pathways, significant anisotropy in charge transfer was observed. Density functional theory (DFT) calculations at the B3LYP-D3/6-311++G(d,p) and ωB97X-D/6-311++G(d,p) levels were employed to assess the impact of normal modes on reorganization energies and charge transfer rates. Results indicated that perchlorination reduced mobility for both holes and electrons. Notably, maximum mobilities were observed at the melting points: 0.0120 cm2 V−1 s−1 for electrons and 0.0798 cm2 V−1 s−1 for holes in coronene at 455 K, and 0.0032 cm2 V−1 s−1 for electrons and 0.0426 cm2 V−1 s−1 for holes in perchlorocoronene at 560 K. This suggests that both crystals exhibit favorable charge transport characteristics near their respective melting points.

Magnetic Field Assisted Enhanced Sensitivity of Nonferromagnetic Materials Boosting the Carrier Transfer: Mechanistic Studies.

The performance of semiconductor sensors is determined by reaction kinetics, conductivity, and electron mobility, which are undoubtedly closely related to the electron motion behavior. Therefore, the effective regulation of electronic states is crucial for improving gas sensing properties. Previous methods of enhancing the gas-sensing performance have induced complex material modifications, and the extent of performance improvement is usually very limited. Further optimization of the gas sensing performance requires continuous efforts to advance new technologies. Toward this issue, a novel magnetic field-induced strategy is adopted to boost the carrier transfer efficiency of nonferromagnetic semiconductors. The gas sensing investigation results manifest that the applied magnetic field can effectively enhance the sensitivity and reduce the baseline resistance. The In2O3 NC-2 (In2O3 nanocubes) with an applied magnetic field have a greatly enhanced response of 161.4 toward 100 ppm formaldehyde, which is 2.5 times higher than that without magnetic field. The enhanced gas sensing properties can be mainly attributed to magnetization of reactive materials, which makes the orientation of electronic magnetic moments consistent, thus greatly contributing to reactivity. This work introduces a practical approach to effectively improve gas sensing performance without further morphology optimization, noble metal catalysis, structural modification, and material cladding. The results of this study provide new insights for designing novel gas sensors to improve the gas sensing performance.

Device Simulation of 25.9% Efficient ZnOxNy${\rm ZnO}_x{\rm N}_y$/Si Tandem Solar Cell

AbstractThe novel, high electron mobility material has been investigated theoretically as an absorber in a two‐terminal tandem solar cell. In addition to its high mobility, can attain sufficiently low carrier concentration to enable ‐junctions, and has a tunable bandgap around the 1.7 eV range. It is therefore suitable for pairing with a Si‐based bottom cell. In addition to the layer, the tandem cell consists of a emitter and a Si heterojunction bottom cell. A buffer layer is introduced between the emitter and absorber in the top cell to mediate a large valence band offset that resulted in a poor fill factor, . A buffer layer bandgap of 1.5 eV gave the highest power conversion efficiency (PCE). The objective is to estimate the optimal performance of in a tandem solar cell. The dependence of current–voltage (–) characteristics on thickness, mobility and carrier concentration in the layer is evaluated, and found to yield maximum performance with 0.35 , 250 Vs–1 and , respectively. Using these conditions, the – parameters of the device under AM1.5 illumination are short circuit current density, mA , open circuit voltage, V, and . With this, it is reported on, to the best of the knowledge, the first device simulation based on .

ZnO thin films co-doped with III-valence metals and halogens: theory and experiment

The efficiency of metal-halogen co-doping of ZnO thin films deposited by DC magnetron sputtering of ceramic targets has been studied theoretically and experimentally. The influence of deposition temperature (300 − 900 K range), ZnX2 pressure (10−10−1 atm), Me2O3 dopant concentration (10−3 − 10 mol %), and Zn pressure (10−14 − 10−6 atm) on the composition of ZnO − Me2O3 − ZnX2 − Zn (Me = Al, Ga, In; X = F, Cl, Br, I) systems has been analyzed theoretically. The surface migration velocity of oxides and halides is also estimated for a wide temperature range. According to the calculation results, the optimal deposition conditions have been recommended. ZnO thin films co-doped with Al+Cl, Ga+Cl, Ga+Br, Ga+I, and In+Cl were deposited using ZnO:Me:X ceramic targets sintered by chemical vapor transport based on halides. The influence of the stoichiometric deviation of ceramic targets, the concentration of halogens, and metal impurities on thin films’ electrical, structural, compositional, and optical properties has been investigated. It is shown that Ga+Cl+Zn co-doping is the most promising. This co-doping increases both the structural perfection of films (electron mobility) and doping efficiency by Ga (charge carrier concentration), reducing the resistivity of thin films by two times compared to the use of classical ZnO:Ga ceramic targets. The optimal stoichiometric deviation of ZnO:Me:X ceramics targets, corresponding to the highest electron mobility and figure of merit of thin films, has been recommended.

Ce3+/Ce4+–TiO2 Nano‐Octahedra as Active Photocatalysts for Ciprofloxacin Photodegradation Under Solar Light

AbstractCerium‐containing titania nano‐octahedra (CeTNOh) are obtained by ultrasonication‐hydrothermal synthesis of Ce‐containing titanate nanowires (0.35, 0.46, and 0.70 Ce mol %) from commercial TiO2 (Degussa P25). CeTNOh are tested as photocatalysts to degrade a target pollutant (ciprofloxacin) under simulated solar light and at mild conditions. CeTNOh are anatase polymorphs with increasing crystallite size as Ce content increases. Hydrothermal treatments enhance the specific surface area (SSA) compared to P25, although Ce addition slightly reduces SSA while increasing crystallite size. Electron Microscopy confirms the morphology, although higher Ce levels hinder a full transformation. X‐ray photoemission spectroscopy (XPS) shows the presence of Ce3+/Ce4+ redox pair, promoting electron mobility and Ti‐Ce interactions. Optical and electronic spectroscopy reveals that Ce loading reduces the bandgap from 3.20 to 2.74 eV, extending light absorption into the visible range, thus enhancing the photocatalytic activity. The best sample, CeTNOh0.35, achieved 83% degradation of ciprofloxacin after 360 minutes under solar irradiation, with poor adsorption in the dark period. Higher Ce loadings negatively affect photoactivity by partially covering titania active sites. Reusability tests confirm the stability and efficiency of CeTNOh0.35 over three cycles, highlighting the importance of octahedral morphology in Ce‐containing systems to boost the final photoactivity for water remediation.

ZnO/SrTiO3, ZnO/WO3, and ZnO/Zn2SnO4 Bilayer as Electron Transport Layers for Lead Sulfide Colloidal Quantum Dots Solar Cells.

In order to enhance the overall efficiency of colloidal quantum dots solar cells, it is crucial to suppress the recombination of charge carriers and minimize energy loss at the interfaces between the transparent electrode, electron transport layer (ETL), and colloidal quantum dots (CQDs) light-absorbing material. In the current study, ZnO/SrTiO3(STO), ZnO/WO3(TO), and ZnO/Zn2SnO4(ZTO) bilayers are introduced as an ETL using a spin-coating technique. The ZTO interlayer exhibits a smoother surface with a root-mean-square (RMS) value of ≈ 3.28nm compared to STO and TO interlayers, which enables it to cover the surface of the ITO/ZnO substrate entirely and helps to prevent direct contact between the CQDs absorber layer and the ITO/ZnO substrate, thereby effectively preventing efficient charge recombination at the interfaces of the ETL/CQDs. Furthermore, the ZTO interlayer possesses superior electron mobility, a higher visible light transmission, and a suitable energy band structure compared to STO and TO. These characteristics are advantageous for extracting charge carriers and facilitating electron transport. The PbS CQDs solar cell based on the ITO/ZnO/ZTO/PbS-FABr/PbS-EDT/NiO/Au device configuration exhibits the highest efficiency of 15.28%, which is significantly superior than the ITO/ZnO/PbS-FABr/PbS-EDT/NiO/Au solar cell device (PCE = 14.38%). This study is anticipated to offer a practical approach to develop ultrathin and compact ETL for highly efficient CQDSCs.

Controlled two-step synthesis of n-type conjugated ladder polymers using a flow reactor

The coplanar backbone of conjugated ladder polymers (cLPs) enhances electron transfer and π-π interactions, making cLPs promising materials for various applications in organic electronics and optoelectronics. Nevertheless, the limited solubility and intricate synthetic processes for cLPs make it challenging to control their molecular weight and corresponding properties, and pose as significant obstacles to their widespread application. Here, an n-type cLP, PNDI-2BocL, was synthesized using a flow reactor for the first time, with controlled molecular weights. The polymerization reaction conditions to synthesize a precursor polymer, PNDI-2Boc, were first optimized in flow, followed by sequential ladderization in batch through the injection of an acid solution. The reaction time of polymerization was varied from 7.5 to 15 min, yielding soluble PNDI-2BocL with a number-averaged molecular weight (Mn) ranging from 9.8 to 54.0 kg/mol with a deviation of 11 %. Additionally, 15 min of polymerization and ladderization were successfully conducted in a single flow system sequentially for the first time. In the molecular weight-dependent studies, higher optical absorption at longer wavelengths, increased degrees of crystallinity, and higher electron mobilities in organic field-effect transistors (OFETs) were observed for higher molecular weight PNDI-2BocL. Our results highlight the importance of controlling the molecular weights of cLPs and demonstrate that the flow synthesis technique provides a viable solution for synthesizing soluble cLPs in a controlled, reproducible, and rapid manner.

Scattering of e∓ in beryllium isonuclear series: cross sections and transport characteristics

The elastic scattering of electrons and positrons by beryllium atoms and its isonuclear ion states is described in this paper in terms of differential and various angle integrated cross sections. For this element, the critical minima in the elastic differential cross sections and the optimum spin polarization sites are found. These calculations are performed using the Dirac partial wave analysis (DPWA) and a projectile-target modified complex optical model potential. Further, the Monte Carlo method is used to calculate the transport characteristics of electrons in a mixture of inert gas (He, Ar) and beryllium vapor for electric field values E/N = 1-100 Td, taking into account inelastic collisions. We studied the effect of metal vapor concentration on drift velocity, average electron energy, diffusion and mobility coefficients. Finally, we investigated the effect of beryllium vapor on the electron energy distribution function in the inert gas. On comparing present work with existing theoretical calculation, a reasonable agreement is observed.

Orientation-dependent electronic structure in interfacial superconductors LaAlO3/KTaO3

Emergent superconductivity at the LaAlO3/KTaO3 interfaces exhibits a mysterious dependence on the KTaO3 crystallographic orientations. Here by soft X-ray angle-resolved photoemission spectroscopy, we directly resolve the electronic structure of the LaAlO3/KTaO3 interfacial superconductors and the non-superconducting counterpart. We find that the mobile electrons that contribute to the interfacial superconductivity show strong k⊥ dispersion. Comparing the superconducting and non-superconducting interfaces, the quasi-three-dimensional electron gas with over 5.5 nm spatial distribution ubiquitously exists and shows similar orbital occupations. The signature of electron-phonon coupling is observed and intriguingly dependent on the interfacial orientations. Remarkably, the stronger electron-phonon coupling signature correlates with the higher superconducting transition temperature. Our observations help scrutinize the theories on the orientation-dependent superconductivity and offer a plausible and straightforward explanation. The interfacial orientation effect that can modify the electron-phonon coupling strength over several nanometers sheds light on the applications of oxide interfaces in general.

Recent Progress on Cross-Linkable Fullerene-Based Electron Transport Materials for Perovskite Solar Cells.

Fullerene-based derivatives are frequently used as electron transport materials (ETMs) and interface buffers for perovskite solar cells (PSCs) due to their excellent properties, including high electron affinity and mobility, low recombination energy, tunable energy levels, and solution processability. However, significant challenges arise because fullerene derivatives tend to aggregate and dimerize, which reduces exciton dissociation and charge transport capacity. Additionally, their chemical compatibility with perovskite absorbers facilitates halide diffusion and degradation of PSCs. This overlap causes delamination and dissolution during device fabrication, hindering the performance enhancement of fullerene-based PSCs. To address these issues, researchers have developed cross-linkable fullerene materials. These materials have been shown to not only significantly improve the power conversion efficiency (PCE) of PSCs but also effectively enhance the device stability. In this review, we summarized recent research progress on cross-linkable fullerene derivatives as ETMs for PSCs. We systematically analyze the impact of these cross-linked ETMs on device performance and long-term stability, focusing on their molecular structures and working mechanisms. Finally, we discuss the future challenges that need to be overcome to advance the application of cross-linkable fullerene materials in PSCs.

Enhanced electrical properties of pulsed Sn-doped (-201) β-Ga2O3 thin films via MOCVD homoepitaxy

Pulsed Sn doping (PSD) homoepitaxial gallium oxide (Ga2O3) films were deposited on (-201) β-Ga2O3 substrates using metal-organic chemical vapor deposition (MOCVD). The study aims to optimize Sn doping conditions to enhance the electrical properties of β-Ga2O3 films. The influence of Sn pulse width (ranging from 0.1 min to 0.3 min) on the morphology, structure, and electrical properties of the film was investigated. The Full Width at Half Maximum (FWHM) of the (-201) crystal plane rocking curve for all doped films is <50 arcsec, indicating high crystal quality. At a Sn pulse width of 0.2 min, we achieve the optimal balance between doping efficiency and crystal quality, resulting in a resistivity of 0.0487 Ω·cm, an electron mobility of 63.5 cm2/V·s, and a carrier concentration of 1.82 × 1018 cm-3. Compared to continuous Sn doping, PSD results in approximately 157 % increase in carrier concentration and 99 % increase in electron mobility. The application of PSD allows sufficient diffusion time for Sn atoms to effectively incorporate into the film, signifying a crucial advancement in enhancing the film's electrical properties and reducing the cost of the metal organic doping source.

Advancements in optical and optoelectronic characteristics of benzotriazole-based asymmetric non-fullerene acceptors for organic photovoltaics

The development of energy-efficient non-fullerene acceptors (NFAs) has attracted much attention in producing efficient organic solar cells (OSCs). These innovative materials are considered a promising alternative to traditional fullerene acceptors because they absorb a broader light range and potentially enhance the OSC performance. Herein, we engineered eleven new asymmetric caterpillar-shaped materials with an A1-D-A2-A1 core as NFAs for OSCs. These efficient materials offer a high absorption efficiency, wide energy level range, and efficient charge transport capabilities. To engineer these caterpillar-shaped NFAs (FT1-FT11), we performed various synergistic modulations of end-capped electron-withdrawing moieties and side-chain engineering on the synthetic reference molecule (FT). The electron and hole reorganization energies, binding energy, transition energy, transition density analysis, electrostatic potential, and photovoltaic characterizations have been performed for these designed caterpillar-shaped (FT1–FT11) series. The designed materials (FT1–FT11) showed a lower binding energy of 0.45 eV, a narrower bandgap (2.11 eV), higher absorption (ranges from 700.44 nm to 781.05), and low electron and hole mobilities (0.0029 and 0.0031) compared to reference molecule FT. To investigate the charge transport process, we employed polymer donor PTB7-Th and efficient NFA acceptor FT11 to establish a donor:acceptor complex (FT11:PTB7-Th). The complex study demonstrates a significant charge transformation at the donor-acceptor interface. As a result, the developed compounds (FT1–FT11), with their superior optoelectronic capabilities, could be viewed as a viable and sustainable choice to fabricate next-generation efficient OSCs.

A study on develop the High-Performance Wide - Band LNA for use with IEEE frequency

In this research, a low-noise amplifier (LNA) with uniform growth, silent operation, and absolutely brilliant uniformity is suggested to be utilized in bandwidth transmitters, with a comparative channel capacity (RBW) of 110%. To enhance extended the reach, researchers present a cascode with dual feedbacks and a wide bandpass (BPDWB) matching network formed from bias and parasitic characteristics. The techniques for constructing a corresponding networking are also shown, and measurements indicate that the channel's resonance frequency is a great pairing for the required resistance in the range from through 3.5 GHz. Resistance matched precision and efficiency in prediction are both boosted by the envisaged BPDWB networks. Paper presents a low amplifiers (LNA) in 0.25 m GaAs father made high mobility electrons semiconductor (GaAs pHEMT) developers and researchers NF0.55 at mhz. Additionally, for the range of frequency of 8.5-20 MHz, overall bit error rate (NF) is somewhere between 2.19 to 3.23 dB, while another NF maximum (vase: internet: mia2bf00852: mia2bf00852-math-0012) varied between 1.55 - 2.91 db. At top of just that, a two-tone test with a frequency separation of 50 MHz demonstrates that the suggested LNA may accomplish high IIP3 of 0.96 frequency range.

Analysis of volatile flavor compounds in Antarctic krill paste with different processing methods based on GC-IMS.

In this study, shrimp paste was prepared using Antarctic krill and fermented Antarctic krill shrimp paste as raw materials. Two commonly used heating methods, stir-fried and steaming, were analyzed, the main difference between the two methods being that stir-frying involves putting the shrimp paste into a wok and stir-frying it for different periods of time, while steaming involves putting the shrimp paste into a steamer and steaming it for different periods of time. The effects of different salt concentrations and processing techniques on the volatile flavor compounds of shrimp paste were also observed. Electronic nose and gas chromatography-ion mobility spectrometry (GC-IMS) were employed to analyze the volatile flavor compounds. A total of 52 volatile flavor compounds were detected by GC-IMS, of which 38 were identified (including monomers, dimers, and polymers). The identified compounds included 11 aldehydes, 6 ketones, 14 alcohols, 2 esters, 2 acids, 1 pyridine compound, and 2 sulfur compounds. In addition, 14 compounds were identifiable. Using the results of the electronic nose analysis, we were also able to differentiate between the volatile flavor compounds in shrimp pastes produced by different processing methods.

Sludge-derived hydrochar modulates complete nonradical electron transfer in peroxydisulfate activation via pyrrolic-N and carbon defect: Implication for degrading electron-rich ionizable anilines compounds

Nonradical electron transfer process (ETP) is a promising pathway for pollutant degradation in peroxydisulfate-based advanced oxidation processes (PDS-AOPs). However, there is a critical bottleneck to trigger ETP by sludge-derived hydrochar due to its negatively charged surface, inferior porosity and electrical conductivity. Herein, pyrrolic-N doped and carbon defected sludge-derived hydrochar (SDHC-N) was constructed for PDS activation to degrade anilines ionizable organic compounds (IOC) through complete nonradical ETP oxidation. Degradation of anilines IOC was not only affected by the electron-donating capacity but also proton concentration in solution because of the ionizable amino group (−NH2). Diverse effects including proton favor, insusceptible and inhibition were observed. Impressively, addition of HCO3 with strong proton binding capacity boosted aniline degradation nearly 10 times. Moreover, characterizations and theoretical calculations demonstrated that pyrrolic-N increased electron density and created positively charged surface, profoundly promoting generation of SDHC-N-S2O82−* complexes. More delocalized electrons around carbon defect could enhance electron mobility. This work guides a rational design of sludge-derived hydrochar to mediate nonradical ETP oxidation, and provides insights into the impacts of proton on anilines IOC degradation.

New Bipolar Host Materials Based on Indolocarbazole for Red Phosphorescent OLEDs.

We designed and synthesized new indolocarbazole-triazine derivatives, 9-di-tert-butyl-5,7-bis(4-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl)-5,7-dihydroindolo[2,3-b]carbazole (2TRZ-P-ICz) and 3,9-di-tert-butyl-5,7-bis(5'-(4,6-diphenyl-1,3,5-triazin-2-yl)-[1,1':3',1″-terphenyl]-2'-yl)-5,7-dihydroindolo[2,3-b]carbazole (2TRZ-TP-ICz), as new bipolar host materials for red phosphorescent OLEDs. In the film state, 2TRZ-P-ICz and 2TRZ-TP-ICz exhibited photoluminescence maxima at 480 nm and 488 nm, respectively. The dipole moment characteristics of the new compounds under various solvent conditions were investigated using the Lippert-Mataga equation. The results showed that the dipole moment of 2TRZ-P-ICz is 26.9D, while that of 2TRZ-TP-ICz is 21.3D. The delayed fluorescence lifetimes were 0.188 μs for 2TRZ-P-ICz and 2.080 μs for 2TRZ-TP-ICz, with 2TRZ-TP-ICz showing TADF characteristics. Additionally, 2TRZ-TP-ICz was found to have a ΔEST of less than 0.2 eV. The triplet energy levels of the newly synthesized bipolar host materials were found to be 2.72 and 2.75 eV, confirming their suitability for use in red phosphorescent OLEDs. To investigate the carrier mobility of the synthesized materials, hole-only devices and electron-only devices were fabricated and tested. The hole mobility value at 1V was found to be 3.43 × 10-3 cm2/Vs for 2TRZ-P-ICz and 2.16 × 10-3 cm2/Vs for 2TRZ-TP-ICz. For electron mobility at 1V, 2TRZ-P-ICz showed a value of 4.41 × 10-9 cm2/Vs, while 2TRZ-TP-ICz exhibited a value of 9.13 × 10-9 cm2/Vs. As a result, when the new material was used as a host in red phosphorescent OLEDs, 2TRZ-TP-ICz achieved a current efficiency of 9.92 cd/A, an external quantum efficiency of 13.7%, CIE coordinates of (0.679, 0.319), and an electroluminescence maximum wavelength of 626 nm.

Modulation of electronic structures and transport properties in 2D TM0.5Ga1.5O3 (TM = Al, Ga, In)

In this study, the band structures, density of states and transport properties of two-dimensional (2D) TM0.5Ga1.5O3 (TM=Al, Ga, In) are investigated by the first principle and the deformation potential theory. Both 2D Al0.5Ga1.5O3 and 2D In0.5Ga1.5O3 alloys tend to form under poor-oxygen conditions. Compared to bulk Ga2O3, the bandgap of 2D Ga2O3 is increased by 0.382 eV and its electron mobility is significantly increased from 143.352cm2·V−1·s−1 to 1486.638cm2·V−1·s−1. For 2D Al0.5Ga1.5O3, the bandgap and the electron effective mass are larger than those of 2D Ga2O3, but its electron mobility is reduced by >25%. In contrast, the bandgap of 2D In0.5Ga1.5O3 is narrower than that of 2D Ga2O3 while its electron mobility is increased by >52%, reaching 2262.901cm2·V−1·s−1. Therefore, 2D In0.5Ga1.5O3 has great potential to be used as a transport material for high-speed Ga2O3 electronic devices.

Parametric Analysis of Indium Gallium Arsenide Wafer-based Thin Body (5 nm) Double-gate MOSFETs for Hybrid RF Applications.

The electrical behavior of a high-performance Indium Gallium Arsenide (In- GaAs) wafer-based n-type Double-Gate (DG) MOSFET with a gate length (LG1= LG2) of 2 nm was analyzed. The relationship of channel length, gate length, top and bottom gate oxide layer thickness, a gate oxide material, and the rectangular wafer with upgraded structural characteristics and the parameters, such as switch current ratio (ION/IOFF) and transconductance (Gm) was analyzed for hybrid RF applications. This work was carried out at 300 K utilizing a Non-Equilibrium Green Function (NEGF) mechanism for the proposed DG MOSFET architecture with La2O3 (EOT=1 nm) as gate dielectric oxide and source-drain device length (LSD) of 45 nm. It resulted in a maximum drain current (IDmax) of 4.52 mA, where the drain-source voltage (VDS) varied between 0 V and 0.5 V at the fixed gate to source voltage (VGS) = 0.5 V. The ON current(ION), leakage current (IOFF), and (ION/IOFF) switching current ratios of 1.56 mA, 8.49Í10-6 μA, and 18.3Í107 μA were obtained when the gate to source voltage (VGS) varied between 0 and 0.5 V at fixed drain-source voltage (VDS)=0.5V. The simulated result showed the values of maximum current density (Jmax), one and twodimensional electron density (N1D and N2D), electron mobility (μn), transconductance (Gm), and Subthreshold Slope (SS) are 52.4 μA/m2, 3.6Í107 cm-1, 11.36Í1012 cm-2, 1417 cm2V-1S-1, 3140 μS/μm, and 178 mV/dec, respectively. The Fermi-Dirac statistics were employed to limit the charge distribution of holes and electrons at a semiconductor-insulator interface. The flat-band voltage (VFB) of - 0.45 V for the fixed threshold voltage greatly impacted the breakdown voltage. The results were obtained by applying carriers to the channels with the (001) axis perpendicular to the gate oxide. The sub-band energy profile and electron density were well implemented and derived using the Non-Equilibrium Green's Function (NEGF) formalism. Further, a few advantages of the proposed heterostructure-based DG MOSFET structure over the other structures were observed. This proposed patent design, with a reduction in the leakage current characteristics, is mainly suitable for advanced Silicon-based solid-state CMOS devices, Microelectronics, Nanotechnologies, and future-generation device applications.