Electron Mobility Research Articles

First-principles study of phase-dependent carrier transport mechanism for MASnI3Sn-based halide perovskite.

Organic-inorganic hybrid perovskites have attracted tremendous attentions owing to their excellent properties as next-generation photovoltaic devices. With soft covalent framework, organic-inorganic hybrid perovskites exhibit different phases at different temperatures. The band-edge features of perovskites are mainly contributed by inorganic framework, which means the structural differences between these phases would lead to complex carrier transport. We investigated the carrier transport of Sn-based organic-inorganic hybrid perovskite CH3NH3SnI3(MASnI3), considering acoustic deformation potential scattering, ionized impurity scattering, and polar optical phonon scattering. It is found that the electron mobility of each phase of MASnI3is strongly correlated with the Sn-I-Sn bond angle and there is in-plane/out-of-plane anisotropy. The projected crystal orbital Hamilton population analysis suggested that the tilt and rotation of the [SnI6]4-octahedron influence the Sn(p)-I(p) orbital electron coupling and the electron transport, leading to different band-edge features in multiple phases. The carrier mobility with respect to temperature was further calculated for each phase of MASnI3in respective temperature intervals, showing lower carrier mobility in high temperature. Comparing the contribution of different scattering mechanisms, it was found that the dominant scattering mechanism is polar optical phonon scattering, while multiple scattering mechanisms compete in individual cases.

Towards First-Principles Predict of Doped α-Ga2O3 Based Structural and Electrical Properties

The α-Ga2O3 holds significant research value on high power device applications for its superior breakdown voltage performance. However, research concerning the doping of α-Ga2O3 remains scant, and the optimal dopant remains unidentified. To identify a potential n-type dopant, a theoretical study of the effects of group IV atoms (Si, Ge, Sn) on doped α-Ga2O3 was evaluated through the first principles calculations. We have systematically explored the lattice deformation, band structure, density of state, charge density difference and electron localization functions. The electron mobility is then evaluated by the deformation potential theory. The lowest formation energy of the Si-doped system suggests it forms the most readily. Meanwhile, Si loses approximately 1.5 times more electrons than Ge and Sn in the doped α-Ga2O3, as evidenced by the charge density difference and electron localization functions. Furthermore, our results reveal that Si is a superior dopant over Ge and Sn. It is owing to a small interaction between the Si 3s state and the Ga 4s generated host CBM, resulting in a minimal effect on the CBM even at high doping levels. The findings of this study have important consequences for improving the doping process of α-Ga2O3 and achieving the development of optoelectronic devices.

Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors

Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors

A-Site Cations Impact on Nonradiative Recombination, Mobility, and Defect Dynamics in Sn-Based Perovskites.

Sn-based perovskites with different cations in the A-site exhibit distinct electronic structures and dynamic properties. By utilizing time-dependent density functional theory and nonadiabatic molecular dynamics, we demonstrate that larger FA cations decrease wave function overlap between initial and final states and slow down nuclear motion. In the case of FASnI3, this alteration decreases the nonadiabatic coupling and increases the nonradiative electron-hole recombination time by 130% and 76%, respectively, compared to CsSnI3 and MASnI3 (CH3NH3SnI3). Furthermore, A-site modification significantly improves electron mobility and changes the properties of defects in FASnI3 (HC(NH2)2SnI3), which achieves higher electron mobility through a polar optical phonon-dominated scattering mechanism and exhibits higher defect formation energy and migration barriers of A-site cations due to increased steric hindrance, relative to CsSnI3 and MASnI3. These results emphasize the critical function of A-site cation substitution in controlling nonradiative recombination dynamics, electron mobility, and defect characteristics in Sn-based perovskites and provide theoretical insights for the advancement of novel lead-free perovskite materials.

Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric

In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection electron energy loss spectroscopy, atomic force microscope, high-resolution transmission electron microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze the deposited BN dielectric. Compared with conventional Schottky-gate HEMTs, the MISHEMTs exhibited significantly enhanced performance with 3 orders of magnitude lower reverse gate leakage current, a lower off-state current of 1 × 10−7 mA/mm, a higher on/off current ratio of 108, and lower on-resistance of 5.40 Ω mm. The frequency-dependent conductance measurement was performed to analyze the BN/HEMT interface, unveiling a low interface trap state density (Dit) on the order of 5 × 1011–6 × 1011 cm−2 eV−1. This work shows the effectiveness of low-temperature BN dielectrics and their potential for advancing GaN MISHEMTs toward high-performance power and RF electronics applications.

Breakdown voltage enhancement and specific on-resistance reduction in depletion-mode GaN HEMTs by co-modulating electric field

In this letter, a depletion-mode GaN high electron mobility transistors (GaN HEMTs) with high breakdown voltage and low on-resistance are designed and experimentally demonstrated. It combines the gate field plate and partial unintentionally doped GaN (u-GaN) cap layer (gate field plate and partial u-GaN cap HEMTs: GPU-HEMTs) to co-modulate the surface electric field distribution, which results in the electric field peak being far away from the gate edge, thus improving the breakdown voltage and decreasing the on-resistance. The optimized GPU-HEMTs exhibit a larger output current (I DS) of 495 mA mm−1 and a correspondingly smaller specific on-resistance of 4.26 mΩ·cm2. Meanwhile, a high breakdown voltage of 1044 V at I DS = 1 mA mm−1 compared to the conventional GaN HEMTs of 633 V was obtained. This approach is highly effective in simultaneously optimizing the breakdown voltage and the specific on-resistance of GaN HEMTs, while maintaining a large output current.

Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing

AlGaN/GaN Double Channel High Electron Mobility Transistors (DCHEMTs) have emerged as promising biosensors, leveraging the unique properties of inter-channel coupling. This paper investigates the influence of mole fraction variations in the AlGaN layer on inter-channel coupling and explores its implications for C-ERB2 biosensing. The study reveals the potential of inter-channel coupling to enhance sensitivity in biosensing applications, particularly for detecting C-ERB2, a crucial protein associated with various cancers. The device architecture, simulation models, electrostatics, and sensitivity analysis are comprehensively examined. The findings underscore the significance of inter-channel coupling in optimizing biosensor performance, offering valuable insights for the advancement of biosensing technologies.

A High-Mobility n-Type Noncovalently-Fused-Ring Polymer for High-Performance Organic Thermoelectrics.

Conjugated polymers are emerging as competitive candidates for organic thermoelectrics (OTEs). However, to make the device truly pervasive, both p- and n-type conjugated polymers are essential. Despite great efforts, no n-type equivalents to the p-type benchmark PEDOT:PSS exist to date mainly due to the low electrical conductivity (σ). Herein, a near-amorphous n-type conjugated polymer, namely pDFSe, is reported with high σ by achieving the synergy between charge transport and doping efficiency. The polymer pDFSe is synthesized based on an acceptor-triad moiety of diketopyrrolopyrrole-difluorobenzoselenadiazole-diketopyrrolopyrrole (DFSe), which has the noncovalently-fused-ring structure to reinforce the backbone rigidity. Furthermore, an axisymmetric thiophene-selenophene-thiophene donor is introduced, which enables the formation of near-amorphous microstructures. The above merits ensure good doping efficiency without scarifying efficient intrachain charge-carrier transport. Thus, pDFSe-based n-type transistors exhibit high electron mobility up to 6.15 cm2 V-1 s-1, much higher than its reference polymer pDSe without the noncovalently-fused-ring structure (0.77 cm2 V-1 s-1). Further upon n-doping, pDFSe demonstrates excellent σ of 62.6 S cm-1 and maximum power factor of 133.1 μW m-1 K-2, which are among the highest values reported for solution-processed n-type polymers. The results demonstrate the great potential of near-amorphous n-type conjugated polymers with noncovalently-fused-ring structure for the next-generation OTEs.

Metal‐Organic Chemical Vapor Deposition Grown Low‐Temperature Aluminum Nitride Gate Dielectric for Gallium Nitride on Si High Electron Mobility Transistor

Gate dielectrics for gallium nitride (GaN) high electron mobility transistor (HEMT) technology have always been challenging because of the nonideal semiconductor–dielectric interface, which leads to electronic traps. Plasma‐enhanced chemical vapor deposition and atomic layer deposition are standard techniques, but they require surface treatment and post‐annealing to control these traps. This article explores metal organic chemical vapor deposition‐grown in situ aluminum nitride (AlN) as a gate dielectric. The interface is expected to be pristine as there is no change in the chamber environment. A thin (10 nm) AlN layer is deposited at a low temperature to minimize strain and prevent the formation of an unwanted conductive channel within the device. The electrical and structural properties of this AlN‐capped HEMT are compared to a standard GaN‐capped HEMT, including temperature‐dependent studies. The results show that the AlN‐capped HEMT retains a higher charge in the channel while having an order of magnitude lower gate leakage than the GaN‐capped sample. Furthermore, the AlN‐capped HEMT performs similarly to the GaN‐capped HEMT in terms of temperature‐dependent leakage, dynamic on‐resistance, and temperature coefficient of resistance.

Efficient and stable semitransparent perovskite photovoltaics via a Lewis base incorporation.

Semitransparent perovskite solar cells (ST-PSCs) have great potential in building integrated photovoltaics. However, semitransparent devices suffer from a low electron mobility and an imbalanced charge-carrier transport, leading to an unsatisfactory power conversion efficiency (PCE) and limited stability. Herein, we report a high-performance ST-PSC via the incorporation of a special Lewis base. A better perovskite with an improved crystallinity and less defects was achieved, and a matched energy level alignment between the perovskite and [6,6]-phenyl-C61-butyric acid methyl ester was also induced, thereby leading to a high electron mobility and an exceptional balance of hole and electron mobility approaching 1 : 1. The prepared ST-PSC exhibited a PCE of 20.22% at average visible transmittance (AVT) of 4.93%, 18.32% at AVT of 14.38%, and 15.00% at AVT of 25.65%. These PCEs are the highest values among those ST-PSCs based on top metallic electrodes at a close AVT. The ST-PSCs maintained 92% of the initial PCE in storage for 1000 h, and they held 84% of the initial PCE under the continuous maximum power point tracking measurement for 530 hours. The work paves the way to realize ST-PSCs with a high PCE, high light utilization efficiency and substantially enhanced stability.

Effect of Methylammonium Iodide (MACl) on MAPbI3-Based Perovskite UV-C Photodetectors

In this study, we fabricated deep ultraviolet (DUV) photodetectors based on perovskite thin films doped with halide materials using formamidinium bromide (FABr) and methylammonium iodide (MAI). The device was fabricated using a simple surface engineering technique by post-treating the MAPbI3 perovskite film with an FABr solution. This film acts as a light absorption layer, like a depletion layer with a p-i-n (PIN) structure, with n-type of SnO2-SDBS and p-type of spiro-OMeTAD. Adding 0.10 M MACl to the MAPbI3 precursor solution during the manufacturing process could effectively reduce the trap density compared with existing films. Films with MACl added in the two-step process can control a wide band gap and improve crystallinity. In addition, the Cl atom has a smaller atomic radius than iodine and a higher electronegativity of 3.16, which can improve phase stability, and the effect of the added Cl− increases the electron mobility of the perovskite, showing a fast response.

60Co gamma radiation effects on NPN transistor at cryogenic temperature.

The 60Co gamma radiation effects on the DC electrical characteristics of silicon NPN transistor were studied in the dose range of 100krad to 6Mrad at room temperature (300K) and cryogenic temperature (77K). The measurements were carried out at both 300 and 77K temperature. The electrical characteristics such as Gummel characteristics, excess base current (ΔIB), current gain (hFE), transconductance (gm) and output characteristics were studied in situ as a function of total dose. The results show that there is a considerable degradation in the electrical parameters of the device irradiated both at 300 and 77K as a consequence of increase in excess base current (ΔIB) because of the formation of generation and recombination centers in the emitter-base spacer oxide (SiO2). At cryogenic temperature irradiation, the degradation in electrical characteristics is less because of the physical phenomena such as carrier freezeout effect, decreased recombination rate, reduced charge yield, decreased electron mobility, etc.

Solid-mechanics analysis and modeling of the alloyed ohmic contact proximity in GaN HEMTs using µRaman spectroscopy

This study explores the impact of alloyed ohmic contact separation on ungated GaN high electron mobility transistors (HEMTs) lattice stress by employing Raman spectroscopy and solid mechanics simulations for comprehensive analysis. Focusing on the substantial stresses exerted by ohmic contacts, our research introduces a novel mechanical calibration procedure. The proposed procedure demonstrates that the stress in the GaN buffer can be precisely modelled using Raman measurements taken from patterns of varying length, which in return reveals the impact of ohmic contacts on stress. We show that this technique shows a good alignment to the Raman measurement results. Moreover, we identify ohmic contact edges as potential sites for defect generation due to the accumulation of substantial elastic energy, a finding supported by experimental observations of crack formations in related studies. Our calibrated mechanical model not only enhances the understanding of stress distributions within GaN HEMTs but also lays the groundwork for future improvements in electro-thermo-mechanical simulations.

Comparative study of sodium and potassium compounds as promoters for growth of monolayer MoS2 with high crystal quality on SiO2/Si substrate

Monolayer MoS2 is promising candidate for fabrication of optoelectronic devices due to its direct bandgap nature and high carrier mobility. Alkali metal compounds have been demonstrated to be helpful promoters for the growth of large single crystal monolayer MoS2 on SiO2/Si substrate. However, the catalytic mechanism of alkali metal compounds is still under debate. Herein, we compared the surface morphology, optical properties, and electrical properties of monolayer MoS2 flakes grown on SiO2/Si substrate assisted by promoters containing potassium or sodium cations and halogen (chlorine) or non-halogen (hydroxide) anions, i.e. NaCl, NaOH, KCl and KOH. Based on the analysis of existing growth mechanism, we proposed that the alkali metal cation, plays a dominant role in promoting the lateral growth of monolayer MoS2 and obtaining high crystal quality. Furthermore, potassium has a greater promoting effect than sodium. By optimizing growth conditions, monolayer triangular MoS2 flakes with large lateral size over 160 μm were grown assisted by KCl promoter. Raman and PL spectra verified excellent crystal quality of the flakes, with typical electron mobilities of 2.98 and 20 cm2 V−1 s−1 for the back-gated filed effect transistors fabricated on as-grown and fresh SiO2/Si substrates, respectively.

Direct Regeneration of Degraded LiFePO4 Cathode via Reductive Solution Relithiation Regeneration Process

The rapid growth of electronic devices, electric vehicles, and mobile energy storage has produced large quantities of spent batteries, leading to significant environmental issues and a shortage of lithium resources. Recycling spent batteries has become urgent to protect the environment. The key to treating spent lithium-ion batteries is to implement green and efficient regeneration. This study proposes a recycling method for the direct regeneration of spent lithium iron phosphate (LFP) batteries using hydrothermal reduction. Ascorbic acid (AA) was used as a low-cost and environmentally friendly reductant to reduce Fe3+ in spent LiFePO4. We also investigated the role of AA in the hydrothermal process and its effects on the electrochemical properties of the regenerated LiFePO4 cathode material (AA-SR-LFP). The results showed that the hydrothermal reduction direct regeneration method successfully produced AA-SR-LFP with good crystallinity and electrochemical properties. AA-SR-LFP exhibited excellent electrochemical properties, with an initial discharge specific capacity of 144.4 mAh g−1 at 1 C and a capacity retention rate of 98.6% after 100 cycles. In summary, the hydrothermal reduction direct regeneration method effectively repairs the defects in the chemical composition and crystal structure of spent LiFePO4. It can be regarded as a green and effective regeneration approach for spent LiFePO4 cathode materials.

Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3

Abstract Free electron mobility (µ free) in 4H-SiC(0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with gate oxides annealed in NO or POCl3 was calculated in a wide range of effective normal field (E eff) from 0.02 to 2 MV cm−1, taking account of scattering by fixed charges and trapped electrons. The present calculation indicates that the Hall mobility in the high-E eff region experimentally obtained for NO-annealed MOSFETs (14 cm2 V−1 s−1 at 1.1 MV cm−1) is much lower than that for POCl3-annealed MOSFETs (41 cm2 V−1 s−1) due to severe Coulomb scattering by electrons trapped at a very high density of interface states.

Weak interlayer interaction and enhanced electron mobility in multilayer WS2 achieved through a layer-by-layer wet transfer approach

Weak interlayer interaction and enhanced electron mobility in multilayer WS2 achieved through a layer-by-layer wet transfer approach

Spin state driven weighted mobility and thermal conductivity properties of electron (Hf) doped strongly correlated Mott insulator LaCoO3 for thermoelectric applications

Here, we report the temperature-dependent electrical resistivity and thermopower of hole (Sr) and electron (Hf) doped LaCoO3 in the range of 303–753 K. With increasing temperature, the insulating behavior (303–503 K) with dominance of small polaron hopping to metallic transition (>503 K) is observed. The electron doped sample shows an insulating behavior (19.5 Ω cm) and positive thermopower (139 μV K−1) value due to the spin state blockade, i.e., electron hopping from high spin Co2+ to low spin Co3+ is strongly inhibited. The calculated weighted mobility (μW) of 0.01 to 0.96 cm2 V−1 s−1 validates the observed spin blockade mechanism in electron doped LaCoO3. The fluctuation of spin/orbital ordering and point defect scattering results in the low thermal conductivity of 0.5 W m−1 K−1 for Hf doped LaCoO3. The spin state blockade observed in the electrical resistivity and low lattice thermal conductivity reveals that spin state transition drives the thermoelectric response in Mott insulator LaCoO3.

MoSSe/Si9C15 heterojunction photodetectors with ultrahigh photocurrent and carrier mobility

The structural, electronic, optical properties and photogalvanic effect of MoSSe/Si9C15 and Si9C15/MoSSe heterostructures are investigated utilizing density functional theory. Band gaps of 1.70 eV and 1.03 eV are respectively exhibited by these heterostructures, both classified as direct bandgap semiconductors. The thermal stability of the MoSSe/Si9C15 and Si9C15/MoSSe heterostructures is demonstrated through ab initio molecular dynamics calculations. A hole mobility of 62774 cm2/Vs in the zigzag direction and an electron mobility of 1248 cm2/Vs in the armchair direction are recorded for the MoSSe/Si9C15 heterostructure. Light absorption in both the ultraviolet and visible light regions is observed for these heterostructures. Upon construction of a self-powered MoSSe/Si9C15 photodetector, a peak photocurrent (Jph) of 10.76 a02/photon is achieved, influenced by changes in polarization angle θ and photon energy, and a maximum extinction ratio of 26.7 is reached, showcasing high polarization sensitivity.

Conjugation-Broken Dimer Acceptors Enable High-Efficiency, Stable, and Flexibility-Robust Organic Solar Cells.

Dimer acceptors in organic solar cells (OSCs) offer distinct advantages, including a well-defined molecular structure and excellent batch-to-batch reproducibility. Their high glass transition temperature (Tg) aids in achieving an optimal kinetic morphology, thereby enhancing device stability. Currently, most of dimer acceptor materials are linked with conjugated units in order to obtain high power conversion efficiencies (PCEs). In this study, different from previous works on conjugation-linked dimer acceptors, a novel series of dimer acceptors are synthesized (named T1, T4, T6, and T12), each linked with different flexible alkyl linkers, and investigated their PCEs, device stability, and flexibility robustness. When blended with PM6, the T6-based device achieves a PCE of 17.09%, comparable to the fully conjugated T0-based device's PCE of 17.12%. The molecular dynamics simulations anddensity functional theorycalculations suggested that flexible conjugation-broken linkers (FCBLs) promote intermolecular electronic couplings, thereby maintaining good electron mobilities of dimer acceptors. Notably, the T6-based device exhibits impressive long-term stability with a T80 lifetime of 1427h, while in the T0-based device, T80 is only 350h. The present work has thus established the relationship between the length of flexible alkyl linkers in such dimer acceptors and the performance and stability of OSCs, which is important to further designing new materials for the fabrication of efficient and stable OSCs.