Electronic Band Structure Calculations Research Articles

A comprehensive first-principles investigation of structural, electronic, vibrational, optical, thermodynamic and thermoelectric properties of LiZnAs

The structural, electronic, vibrational, optical, thermodynamic and thermoelectric properties of Nowotny–Juza filled tetrahedral semiconductor LiZnAs under high pressure is investigated using the plane-wave pseudo-potential approach in the frame work of density functional theory (DFT) within the generalized gradient approximation (GGA). The calculated lattice constant (a0) and bulk modulus (B0) at ambient pressure are consistent with earlier reported experiment and theoretical results. The variation in Lattice constant, Bulk modulus (B0), Young modulus (Y), Shear modulus (G), Elastic anisotropy factor (A), Poission ratio (μ), Paugh (B/G) ratio and Elastic constants with pressure is analyzed and concluded. Electronic band structure calculations reveal that with applied pressure direct band gap increases and the indirect band gap decreases. Thermodynamic properties reveals thermodynamically stability with pressurize conditions. The real and imaginary parts of the Dielectric function (ε), Refractive index (η), Extinction Coefficient (k), Optical Conductivity (s), Electron/Optical Energy Loss Function (L), Absorption Coefficient (α), Reflectivity (R) at different pressure conditions are correspondingly studied. With applied pressure the absorption spectra shows a blue shift which makes LiZnAs as potential candidates for the application of optoelectronic devices in ultraviolet frequency range. The thermoelectric properties like Seebeck coefficient (S), Electrical conductivity (σ), and Electronic thermal conductivity (k) and Power factor (PF) have been studied as a function of temperature and chemical potential. Positive value of calculated Seebeck coefficient with temperatures ensures the p-type semiconducting nature of LiZnAs. Results provides theoretical guidance for future experimental investigations and industrial applications of LiZnAs.

Meta-GGA study of 2D AlN/BN planer heterostructure and performance enhancement via strain engineering.

The 2D AlN/BN planer heterostructure is a promising wide band gap semiconductor, but systematic studies of its bandgap and optical characteristics under applied strain are scarce. Here, the engineering property of 2D AlN/BN comprising bandgap nature transition and optical absorption capability (from unstrained to strained) have been investigated using density functional theory calculations. The formation energy calculations confirm the stability of the simulated nanoheterostructure. The electronic band structure calculations demonstrate that nanoheterostructure is an indirect bandgap material with a large bandgap of 5.26 eV, which can be modified effectively by applying strain. According to the calculations, the transition from indirect to direct band gap behavior has been observed at +15% biaxial strain with 2.71 eV band gap energy. Meanwhile, calculations for optical absorption and dielectric function reveal that the system has significant absorption peaks in the ultraviolet region which are very sensitive to applied strain. As strain increases, the first absorption peaks are shifted towards a lower energy range from 5.73 eV (Ꜫ= 0 %) to 3.76 eV (Ꜫ = +15%), which features an enhancement of optical absorption for solar and solar-blind regions. Furthermore, we determined that the band edge positions in 2D AlN/BN straddled the water redox potential under strain, indicating its effectiveness as a proficient photocatalyst. These characteristics make 2D AlN/BN planer nanoheterostructure a promising candidate for applications in optoelectronics and photocatalytic water splitting performance. First principles computations based on density functional theory were employed to carry out all the calculations with a self-consistent approach. For solving the Kohn-Sham equations, the first principles dependent full-potential linearized augmented plane wave scheme were adopted. For addressing the exchange-correlation effects, the generalized gradient approximation of PBEsol functional was used. To prevent interaction between the periodic images, we have inserted a vacuum region of 10 Å in the z-direction. Non-negligible weak dispersion corrections in nanoheterostructure were considered by using the DFT-D3 method of Grimme's. The locally modified Becke-Johnson (lmBJ) exchange potential has also been applied to compute electronic and optical properties in this research to obtain more accurate information.

The effects of V doping on the intrinsic properties of SmFe10Co2 alloys: A theoretical investigation

The present study focuses on the intrinsic properties of the SmFe10Co2-xVx (x = 0–2) alloys, which includes the SmFe10Co2 alloy, one of the most promising permanent magnets with the ThMn12 type of structure due to its large saturation magnetization (µ0Ms = 1.78 T), high Curie temperature (Tc = 859 K), and anisotropy field (µ0Ha = 12 T) experimentally obtained. Unfortunately, its low coercivity (<0.4 T) hinders its use in permanent magnet applications. The effect of V-doping on magnetization, magnetocrystalline anisotropy energy, and Curie temperature is investigated by electronic band structure calculations. The spin-polarized fully relativistic Korringa-Kohn-Rostoker (SPR-KKR) band structure method, which employs the coherent potential approximation (CPA) to deal with substitutional disorder, has been used. The Hubbard-U correction to local spin density approximation (LSDA + U) was used to account for the large correlation effects due to the 4f electronic states of Sm. The computed magnetic moments and magnetocrystalline anisotropy energies were compared with existing experimental data to validate the theoretical approach’s reliability. The exchange-coupling parameters from the Heisenberg model were used for obtaining the mean-field estimated Curie temperature. The magnetic anisotropy energy was separated into contributions from transition metals and Sm, and its relationships with the local environment, interatomic distances, and valence electron delocalization were analyzed. The suitability of the hypothetical SmFe10CoV alloy for permanent magnet manufacture was assessed using the calculated anisotropy field, magnetic hardness, and intrinsic magnetic properties.

A Computational Investigation of Lithium‐Based Metal Hydrides for Advanced Solid‐State Hydrogen Storage

AbstractHydrogen storage is a crucial step in commercializing hydrogen‐based energy production. Solid‐state hydrogen storage has gained much attention from researchers and needs extensive research. In the present study, we investigate the structural, mechanical, and optoelectronic properties of lithium‐based LiAH3 (A=Mn, Fe, Co) metal hydrides to elucidate their potential for solid‐state hydrogen storage. First, we evaluate the structure stability of LiAH3 hydrides using formation enthalpies calculations. Then, the mechanical stability is determined by elastic stiffness constants, which reveal that LiAH3 hydrides are stable mechanically as they meet the Born stability requirements. Electronic band structure calculations manifest that all LiAH3 hydrides possess a metallic character. Several optical properties have been discussed in detail. The gravimetric hydrogen storage capacities of LiMnH3, LiFeH3 and LiCoH3 hydrides are 4.65, 4.60 and 4.39 wt%, respectively, achieving the target of US‐DOE for rechargeable equipment. Additionally, we have determined the volumetric hydrogen storage capacities (Cv) for all LiAH3 hydrides. It is worth mentioning that the highest Cv values have been obtained to be 180.80, 188.18 and 177.25gH2l−1 for LiMnH3, LiFeH3 and LiCoH3 hydrides, respectively, which have achieved the US‐DOE target set for 2025. Our investigation predicts the applicability of lithium‐based hydrides as promising solid‐state hydrogen storage materials.

First-principles calculations to investigate the structural, electronic, optical, mechanical, and thermodynamic properties of double perovskites Ba2WB′O6 (B′ = Co, Fe, Mn, Ni, and Zn)

We utilized the WIEN2K code within the DFT framework to comprehensively investigate Ba2WBˈO6 (Bˈ = Mn, Fe, Co, Ni, Zn) double perovskite compounds. Structural stability, assessed by Goldsmith's tolerance factor (tG), revealed values close to unity, indicative of stable cubic perovskite structures. The Birch-Murnaghan's equation of state optimization determined ground states, unveiling trends in lattice constant (a0) and bulk modulus (B) for different cations. Structural and phonon stability were confirmed by negative energy formation and real frequencies in phonon calculations. DFPT results affirmed the thermodynamic stability of all compounds. Electronic band structure calculations identified Ba2WMnO6 and Ba2WNiO6 as conductors, while Ba2WCoO6 and Ba2WZnO6 were insulators with 3.7 eV and 3.8 eV band gaps, respectively. Ba2WFeO6 demonstrated semiconducting properties with a 2.37 eV band gap. Density of States (DOS) analysis supported the electronic band structure. Optical conductivity analysis revealed increasing values at higher energy ranges, followed by gradual decreases, differing between conductors and insulators. Absorption coefficient indicated potential suitability for optoelectronic devices, and refractive index analysis highlighted trends in material transparency. To understand fundamental properties, thermodynamic characteristics (thermal expansion coefficient, heat capacities, Debye temperature) were analyzed across a wide pressure (0–30 GPa) and temperature (0–1600 K) range.

The germanides ScTGe2 (T = Fe, Co, Ru, Rh) – crystal chemistry, 45Sc solid-state NMR and 57Fe Mössbauer spectroscopy

Abstract The TiMnSi2-type (space group Pbam) germanides ScTGe2 (T = Fe, Co, Ru, Rh) were synthesized from the elements by arc-melting. Single crystals were grown by annealing sequences of the arc-melted buttons in an induction furnace. The structures of ScFeGe2, ScRuGe2 and ScRhGe2 were refined from single-crystal X-ray diffraction data. In ScRuGe2, the ruthenium atoms have distorted octahedral germanium coordination (242–268 pm Ru–Ge). Three trans-face-sharing octahedra form a sub-unit which is condensed via common edges in c direction and connected via common corners with four adjacent blocks, forming a three-dimensional [RuGe2 type] substructure. The two crystallographically independent scandium sites have coordination numbers 15 (Sc1@Ge8Ru4Sc3) and 17 (Sc2@Ge7Ru6Sc4). Electronic band structure calculations for ScCoGe2 and ScRuGe2 show a net charge transfer from the scandium to the transition metal and germanium atoms, leading to a description with polyanionic networks Sc δ+[TGe2]δ−. The two crystallographically independent Sc sites are easily distinguishable by 45Sc magic-angle spinning (MAS)-NMR spectroscopy. Isotropic chemical shift values and nuclear electric quadrupolar interaction parameters were deduced from an analysis of the triple-quantum (TQ)-MAS NMR spectra. The electric field gradient parameters deduced from these experiments are in good agreement with quantum-chemical calculations using the Wien2k code. Likewise, the two crystallographically independent iron sites in ScFeGe2 could be discriminated in the 57Fe Mößbauer spectra through their isomer shifts and quadrupole splitting parameters: δ = 0.369(1) mm s−1 and ∆E Q = 0.232(2) mm s−1 for Fe1 and δ = 0.375(2) mm s−1 and ∆E Q = 0.435(4) mm s−1 for Fe2 (data at T = 78 K).

Ab initio investigations of the structure-stability, mechanical, electronic, thermodynamic and optical properties of Ti2FeAs Heusler alloy.

In this study, we employed density functional theory coupled with the full-potential linearized augmented plane-wave method (FP-LAPW) to investigate the structural, electronic, and magnetic properties of the Ti2FeAs alloy adopting the Hg2CuTi-type structure. Our findings demonstrate that all the examined structures exhibit ferromagnetic (FM) behaviour. By conducting electronic band structure calculations, we observed an energy gap of 0.739 eV for Ti2FeAs in the spin-down state and metallic intersections at the Fermi level in the spin-up state. These results suggest the half-metallic (HM) nature of Ti2FeAs, where the Ti-d and Fe-d electronic states play a significant role near the Fermi level. Additionally, the obtained total magnetic moments are consistent with the Slater-Pauling rule (Mtot = Ztot - 18), indicating 100% spin polarization for these compounds. To explore their optical properties, we employed the dielectric function to compute various optical parameters, including absorption spectra, energy-loss spectra, refractive index, reflectivity, and conductivity. Furthermore, various thermodynamic parameters were evaluated at different temperatures and pressures. The results obtained from the elastic parameters reveal the anisotropic and ductile nature of the Ti2FeAs compound. These findings suggest that Ti2FeAs has potential applications in temperature-tolerant devices and optoelectronic devices as a UV absorber.

Density functional theory study of the electronic and optical properties of pentagraphyne nanotubes.

Pentagraphyne (PG-yne), a recently predicted two-dimensional (2D) carbon allotrope with appealing properties, has opened up possibilities for a wide range of applications. In this study, we investigate the structural, electronic, optical, and electrical transport properties of a novel one-dimensional (1D) system called pentagraphyne nanotubes (PG-yneNTs), formed by rolling a PG-yne sheet, using density functional theory (DFT) calculations. We design PG-yneNTs with diameters ranging from 6.94 Å to 13.62 Å and employ state-of-the-art theoretical calculations to confirm their energetic, dynamic, and thermodynamic stability. Our electronic band structure calculations reveal that all these nanotubes are wide indirect band gap semiconductors. Remarkably, PG-yneNTs exhibit superior optical properties, including high absorption coefficients and absorption spectra covering the visible regime of the electromagnetic spectrum, making them potential candidates for visible-light-driven photocatalysis and solar cells. Interestingly, both the electronic and optical band gaps increase with the diameter of the nanotubes. Additionally, the observation of negative differential resistance (NDR) phenomena in (4, 0) PG-yneNT suggests their potential applications in NDR devices such as fast switches, frequency multipliers, and memory devices.

Energy-efficient sintering-free Chemically synthesized carbon nanofibers for high-performance supercapacitors

This work introduces a cost-effective method to synthesize carbon nanofibers (CNFs) at a lower temperature (∼100 °C), addressing the synthesis cost and precursor selection challenges associated with traditional methods requiring temperatures of ⁓3000 °C. Acid-etched banana fibers served as sustainable precursors, while KClO3 acted as a liquid carbonization medium. The resulting CNFs (referred MCCNFs), exhibited hollow structures with intertwined tubular morphology (OD ∼20–40 nm and ID∼ 5–10 nm). They possessed a hexagonal porous structure (P63/mmc) with a high specific surface area (152.09 m2g-1), significant pore volume (0.459 ccg−1), and impressive tensile strength exceeding 2.71 TPa. Smaller intensity ratio of D and G bands (0.396) confirmed their purity and structural integrity. MCCNFs displayed semi-metallic behaviour with superior electrical conductivity (0.0386 S-m−1), validated by ab initio electronic band structure calculations. UV–vis absorption spectra revealed a linear band structure. Notably, MCCNFs displayed a record-breaking capacitance of 1412.5 Fg-1 at 5 Ag-1, making them promising for supercapacitor electrode applications. Furthermore, these CNFs were used to fabricate a flexible all-solid-state supercapacitor, successfully powering 6 LEDs for 10 s. Hence, this work set a pave for low-cost, low-temperature synthesis of CNFs having superior physical and chemical properties and immense promise for advancing energy storage applications.

Anisotropic structural, vibrational, electronic, optical, and elastic properties of single-layer hafnium pentatelluride: an ab initio study.

Motivated by the highly anisotropic nature of bulk hafnium pentatelluride (HfTe5), the structural, vibrational, electronic, optical, and elastic properties of single-layer two-dimensional (2D) HfTe5 were investigated by performing density functional theory (DFT)-based first-principles calculations. Total energy and geometry optimizations reveal that the 2D single-layer form of HfTe5 exhibits in-plane anisotropy. The phonon band structure shows dynamic stability of the free-standing layer and the predicted Raman spectrum displays seven characteristic Raman-active phonon peaks. In addition to its dynamic stability, HfTe5 is shown to exhibit thermal stability at room temperature, as confirmed by quantum molecular dynamics simulations. Moreover, the obtained elastic stiffness tensor elements indicate the mechanical stability of HfTe5 with its orientation-dependent soft nature. The electronic band structure calculations show the indirect-gap semiconducting behavior of HfTe5 with a narrow electronic band gap energy. The optical properties of HfTe5, in terms of its imaginary dielectric function, absorption coefficient, reflectance, and transmittance, are shown to exhibit strong in-plane anisotropy. Furthermore, structural analysis of several point defects and their oxidized structures was performed by means of simulated STM images. Among the considered vacancy defects, namely , , VTeout, VTein, , and VHf, the formation of VTeout is revealed to be the most favorable defect. While and VHf defects lead to local magnetism, only the oxygen-substituted VHf structure possesses magnetism among the oxidized defects. Moreover, it is found that all the bare and oxidized vacant sites can be distinguished from each other through the STM images. Overall, our study indicates not only the fundamental anisotropic features of single-layer HfTe5, but also shows the signatures of feasible point defects and their oxidized structures, which may be useful for future experiments on 2D HfTe5.

The luminescent semiconductor Pb7I6(CN2)4.

The development of new compounds in the domain of metal dinitridocarbonates is most efficiently performed via solid-state metathesis or simply by addition reactions. Our discovery of Pb7I6(CN2)4 is the result of a solid-state reaction of PbCN2 with PbI2 at 420 °C. Its crystal structure was solved and refined from X-ray diffraction data based on a single crystal with the space group P63/mmc. The crystal structure is based on a network of lead tetrahedra, lead trigonal bipyramids and lead octahedra interconnected by [NCN]2- and iodide. Properties of the material were investigated by diffuse reflection measurement, photoluminescence measurements, and electronic band structure calculations demonstrating that this material is a semiconductor.

Physical Properties of Piezoelectric Zr3GeO8 Crystal

Based on the density functional theory and first-principal calculations, the physical properties of the Zr3GeO8 crystal for the ground state were calculated. In all calculations, the Density functional theory based ABINIT package program was used. Investigations were made under the local density approximation. The geometric optimization of the Zr3GeO8 crystal, the state density of the valence electrons, the electronic band structure to understand the conductivity character of the crystal, and the linear optical properties to see the response of the material to the electromagnetic wave were calculated. In addition, dynamic-thermodynamic properties were calculated for the Zr3GeO8 crystal. According to the calculated structural optimization and electronic band structure, the band gap of the Zr3GeO8 crystal is 4.4663 eV and it has been obtained that it has an indirect band gap. For the Zr3GeO8 crystal, some constants such as energy loss functions, reflectivity, and absorption coefficient are calculated depending on the ground state linear optical properties and linear optical properties. The phonon distribution, state density and contribution of each atom to the density of state the Zr3GeO8 crystal were calculated. Finally, free energy, internal energy, entropy, and heat capacity were calculated for the Zr3GeO8 crystal.

First-principles calculations investigating structural, electronic optical and elastic properties of ABSe3 (A = Rb, Cs) compounds explored for photovoltaic and optoelectronics applications

In few recent years, great and significant efforts are devoted from researcher all over the world to pursue the revolution of photovoltaic’s materials and their uses in various applications. In the present work, a series of ab-initio simulations based on the density functional theory DFT plane wave pseudo-potential (PW-PP) method and hence performed towards the perselenoborate materials ABSe3 (A = Rb,Cs) for the first time along the three main polarizations of the incident wave directions [100], [010] and [001] with the aim of exploring their structural, electronic, optical and elastic properties. The generalized gradient approximation Perdew–Burke–Ernzerhof (GGA-PBE) carried out with CASTEP code is used for the exchange–correlation potential. The computed results showed that the structural properties of investigated compounds are very good agreement to the available experimental data, showing that the current calculations are quite accurate. Moreover, the density of states and electronic band structure calculations reveal that RbBSe3 (CsBSe3) compounds exhibit direct band gap semiconductor nature 1.66 eV (1,82 eV) respectively within the optimal range band gap 1eV–2eV required for photovoltaic’s applications makes them having great potential to obtain efficient Perovskite solar cell PSC. Additionally, our finding optical properties calculations reveal that the two investigated compounds exhibit strong absorption (prominent absorption peaks up 2,4 × 105cm−1) in UV range, while the real part of the refractive index for RbBSe3 (CsBSe3) was 2.62 (2.60) respectively which might be beneficial for photovoltaic application (top cell in solar cell) and optical applications. Also, high optical conductivity (∼1015sec−1) is found to be observed in visible ultraviolet range (1.7 eV to 30 eV). The lower reflectivity seen by RbBSe3 compared to CsBSe3 in the larger energy spectrum of electromagnetic radiation suggests that RbBSe3 compound is more suitable for electronic applications. Further, once the elastic constants are obtained, the calculated mechanical properties, bulk modulus (B), shear modulus (G), the ratio B/G, Young’s modulus (E), Poisson’s ratio (ν), anisotropy universal (AU) are calculated. Our calculated Young’s modulus indicate that the CsBSe3 is less hardness compared to RbBSe3, while Poisson’s ratio calculated leads them to have a character ionic and RbBSe3 is more ductile than CsBSe3. The calculation value of θ D predicted from elastic constants appears low which is closely related to many physical properties such as specific heat and melting temperature. Finally, the finding results reveal another way of investigating mechanical stability, where both compounds are mechanically stable since all elastic constant computed are perfectly satisfied the Born stability criteria, flexible and brittle. Finally, we hope that all these results will be helpful for designing photovoltaic and optoelectronic devices.

Synthesis, crystal structure and optical properties of the first Hg-based polyselenide Ba2HgSe5

A new polyselenide, Ba2HgSe5 has been synthesized via conventional high-temperature solid state reaction. Single-crystal X-ray diffraction experiment reveals that the title compound crystallizes in the centrosymmetric space group Pnma of the orthorhombic system with a = 12.7123(7) Å, b = 8.9593(5) Å, c = 8.5470(5) Å and Z = 4. Its crystal structure consists of isolated dumbbell-shaped (HgSe2)2- and V-shaped Se32− ions. These molecular anions are charge-balanced by Ba2+. Diffuse reflectance spectrum demonstrates the semiconducting properties with a direct band gap of 1.75 eV. Electronic band structure calculation indicates that the band gap is defined by the 4p-orbitals of the selenium atoms of the Se32− groups. Moreover, the photocatalytic behavior of the polycrystalline sample was investigated by decomposing antibiotics tetracycline hydrochloride under visible right irradiation and the result indicates that the title compound displays moderate degradation rate of 60 % within 2 h. In addition, thermal analysis shows that Ba2HgSe5 has a good thermal stability up to 640 °C and exhibits incongruent melting behavior. These characteristics imply that Ba2HgSe5 may be a fascinating photoelectronic material and has potential applications in the future.

DFT techniques for resolution of significant practical materials problems

Significant examples are presented on the capacity to predict properties of practical materials and to understand fundamental properties by informed use of Density Functional Theory (DFT) computational techniques. An example in the field of battery materials, involves understanding surface phenomena via a combination of multiple experimental techniques and DFT calculations of electronic band structures (EBS). This approach delivered significantly improved cycle life of battery cathode materials. Another example is from the field of superconductivity. In this case, analysis of results from advanced experimental techniques, interpreted with the assistance of DFT calculations, reveals that crystal symmetries of superconductors are different to the general space group symmetry routinely used. The insight on fundamental properties gained from precise DFT calculations is unparalleled and accelerates research progress. The importance of calibration that enables accurate and realistic DFT approaches to modelling, combined with regular experimental validation, cannot be overstated.

Synthesis and Crystal and Electronic Structures of the Zintl Phase Sr21Cd4Sb18

Reported herein are the synthesis and crystal chemistry analysis of the Zintl phase Sr21Cd4Sb18. Single crystals of this compound were grown using the Sn-flux method, and structural characterization was carried out using single-crystal X-ray diffraction. Crystal data: Monoclinic space group C2/m (No. 12, Z = 4); a = 18.2536(6) Å, b = 17.4018(5) Å, and c = 17.8979(6) Å, β = 92.024(1)°. The structure is based on edge- and corner-shared CdSb4 tetrahedra, which ultimately form octameric [Cd8Sb22] fragments, where two symmetry-equivalent subunits are connected via a homoatomic Sb–Sb interaction. The electronic band structure calculations contained herein reveal the emergence of a direct gap between the valence and the conduction bands.

Ultrafast helicity-dependent photocurrents in Weyl Magnet Mn3Sn

Mn3Sn is a material that has attracted a lot of attention lately for its topologically non-trivial band structure, which leads to very promising spintronic properties. In this work we experimentally demonstrate that an epitaxially grown thin film of Mn3Sn acts as a source of THz radiation at room temperature when irradiated by a femtosecond laser pulse. By combining various experimental measurements as a function of pump polarisation, magnetic field, and sample orientation we are able to explain the origin of the THz emission with the photocurrents generated via the photon drag effect. A thorough symmetry analysis combined with electronic band structure calculations using density-functional theory (DFT) are used to support our conclusions and provide a guide towards the important features that lead to photocurrent generation, which is useful for designing ultra-fast current pulses emitters.

Ab-initio investigation of the physical properties of BaAgAs Dirac semimetal and its possible thermo-mechanical and optoelectronic applications

BaAgAs is a ternary Dirac semimetal which can be tuned across a number of topological orders. In this study we have investigated the bulk physical properties of BaAgAs using density functional theory based computations. Most of the results presented in this work are novel. The optimized structural parameters are in good agreement with previous results. The elastic constants indicate that BaAgAs is mechanically stable and brittle in nature. The compound is moderately hard and possesses fair degree of machinability. There is significant mechanical/elastic anisotropy in BaAgAs. The Debye temperature of the compound is medium and the phonon thermal conductivity and melting temperature are moderate as well. The bonding character is mixed with notable covalent contribution. The electronic band structure calculations reveal clear semimetallic behavior with a Dirac node at the Fermi level. BaAgAs has a small ellipsoidal Fermi surface centered at the Γ-point of the Brillouin zone. The phonon dispersion curves show dynamical stability. There is a clear phonon band gap between the acoustic and the optical branches. The energy dependent optical constants conform to the band structure calculations. The compound is an efficient absorber of the ultraviolet light and has potential to be used as an anti-reflection coating. Optical anisotropy of BaAgAs is moderate. The computed repulsive Coulomb pseudopotential is low indicating that the electronic correlations in this compound are not strong.

Deciphering the structural evolutions and electronic features of Nd3+:K2YF5 nanocrystals

Neodymium (Nd3+)-doped K2YF5 nanophosphors have attracted considerable attention due to their promising application in fiber lasers, luminescence thermometry and bioimaging. However, the structural evolutions and electronic properties of Nd3+-doped K2YF5 nanocrystals have not been comprehensively studied, which is exactly the basis of spectral formation. In this letter, the ground structure of Nd3+:K2YF5 crystals are first obtained by crystal structure prediction in conjunction with density functional theory. Our results reveal a new stable phase with Pm (No. 6) space group for the Nd3+:K2YF5 nanocrystals, and Nd3+ ions replace the position of Y3+ ions. Additionally, we have identified the presence of a local polyhedron [NdF7]4-, wherein the crystallographic site with Cs symmetry is occupied by Nd3+ ions. The excellent agreement observed between our simulated X-ray diffraction patterns and the experimental data serves as compelling evidence supporting the validity of the ground-state structure. The electronic band structure calculation of Nd3+-doped K2YF5 employing the enhanced modified Becke-Johnson methodology demonstrates a closure of the insulator band gap (4.01 eV). Our analysis of the electron localization function for Nd3+-doped K2YF5 crystal indicates a dominant ionic bond interaction between Nd and F ions. These results offer valuable insights into the structural evolution and enable the exploration of properties when encountering other rare-earth-doped materials.

Pressure driven structural phase transitions and modulations in optical properties of lanthanum nitride: an account from on the fly molecular dynamics and SCF vis-à-vis non-SCF first-principle calculations

The paper is focused to explore the pressure induced structural phase transitions and modulations of optical properties of lanthanum nitride (LaN) for the first time with the aid of first-principle density functional theory and Born–Oppenheimer on the fly molecular dynamics calculations. Crystal structures, Gibbs free energies and phonon dispersion spectra of the compound in its various phases under ambient and external pressures have been critically investigated. The key phonon modes responsible for these pressure driven transitions have also been unveiled. Electronic band structures and associated optoelectronic properties of the systems have been studied in detail from both the self-consistent field and non-self-consistent field calculations. The early signature of topological insulator for the high pressure phase of LaN has been addressed from the electronic band structure calculations. We believe that this study will not only help for futuristic designs of improved functionalized systems with LaN compound but also can augment their applications such as pressure sensors, pressure conducting switches, dissipationless transistors and in optoelectronic devices.