The electron-polar-optical-phonon scattering rates in wurtzite AlxGa1–xN/GaN single heterostructures are calculated in the framework of a dielectric continuum description of the oscillation modes. Electron-phonon matrix elements are evaluated for the particular potential profile of a AlGaN/GaN single heterostructure field effect transistor. The conduction band bending is described by a recently proposed model potential. The importance of the arising results for a future study of the optical-phonon-limited electron mobility in this kind of systems is highlighted. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)