Abstract
The electron-polar-optical-phonon scattering rates in wurtzite AlxGa1–xN/GaN single heterostructures are calculated in the framework of a dielectric continuum description of the oscillation modes. Electron-phonon matrix elements are evaluated for the particular potential profile of a AlGaN/GaN single heterostructure field effect transistor. The conduction band bending is described by a recently proposed model potential. The importance of the arising results for a future study of the optical-phonon-limited electron mobility in this kind of systems is highlighted. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
