Electron Overflow Research Articles

Impact of Alternating-Current Operation on All-Inorganic Quantum Dot Light-Emitting Diodes.

In colloidal quantum dot light-emitting diodes (QD-LEDs), replacing organic hole transport layers (HTLs) with their inorganic counterparts is expected to yield distinct advantages due to their inherent material robustness. However, despite the promising characteristics of all-inorganic QD-LEDs, some challenges persist in achieving stable operation; for example, the electron overflow toward the inorganic HTL and charge accumulation within working devices return a temporal inconsistency in device characteristics. To address these challenges, we propose an operational approach that employs an alternating-current (AC) in all-inorganic QD-LEDs. We carry out comprehensive studies on the optoelectrical characteristics of all-inorganic QD-LEDs under direct-current (DC) or AC operation and demonstrate that AC operation can facilitate efficient charge carrier recombination within the QD emissive layer, leading to improved device efficiency and temporally invariant optoelectronic characteristics. Leveraging the intrinsic material robustness of inorganic charge transport layers (CTLs), our current study suggests a promising pathway toward enhancing the performance and stability of QD-LEDs, particularly for futuristic display applications.

High-Power and High-Efficiency 221 nm AlGaN Far Ultraviolet Laser Diodes

The optical features of far ultraviolet laser diodes (UV LDs) with peak wavelength emission of 221 nm have been numerically analyzed. Global research teams are developing aluminum gallium nitride (AlGaN)-based farUV LDs on Sapphire and AlN substrates as an alternative to Mercury lamps for air-water purification, polymer curing, and bio-medical devices. In this study, the light output power, internal quantum efficiency, stimulated recombination rate curve, and optical gain curve of the compositionally graded p-cladding layer (p-CL) were studied and show significant improvements. Therefore, the optimized structure can reduce the overflow of electrons and increase the injection of holes. This approach proves to be an efficient method for enhancing farUV LDs’ overall performance when compared to the reference structure.

Investigation on the performance of deep ultraviolet edge emitting laser diodes using graded undoped AlGaN electron blocking layer (EBL)

P-AlGaN EBLs are usually used to control the overflow of electrons from the multiple quantum wells (MQWs) in AlGaN-based deep ultraviolet (DUV) edge-emitting laser diodes (EELDs). They're specially designed to prevent the excess flow of electrons from the MQW. This control is essential for maintaining the laser's efficiency and performance. Using optimized parameters of Al composition through theoretical calculations using Crosslight software helps certify the electrically driven EELD functions effectively within the desired operational range. In this study, the traditional p-AlGaN EBL within the electrically driven EELD is substituted with an undoped AlGaN EBL. This modification aims to raise the effective barrier height of the conduction band, and thus effectively stopping the electron leakage while improving the injection of holes. By optimizing the aluminum composition in the current research, efforts are made to lower the threshold current (Ith) and elevate the overall enactment of the graded undoped AlGaN EBL EELD. Various structural designs, including both conventional and undoped configurations, have been successfully created and analyzed in this study. Particular attention was given to investigating the impact of grading techniques applied to the electron-blocking layer. The graded undoped AlGaN EBL EELD performed better than the highly doped AlGaN EBL EELD due to the minimized free carrier absorption loss. Specifically, it shows higher slope efficiency (S.E) of 1.45 W/A and a significantly lower Ith of 790 mA. A new AlGaN EBL EELD design was tested with different layers. The ones with a graded undoped EBLs performed better than traditional AlGaN EBL EELD, improving power efficiency. The graded undoped EBLs setup also reduced the threshold current compared to traditional AlGaN EBL EELD.

High performance deep-ultraviolet light-emitting diodes with transverse electron injection

Conventional structure deep-ultraviolet light-emitting diodes (DUV-LEDs) at short wavelengths typically suffer from electron overflow and low light-emitting efficiency. For solar-blind communication application, conventional DUV-LEDs are struggling to simultaneously implement high external quantum efficiency (EQE) and high modulation bandwidth. In this paper, we report that transverse structure LEDs can overcome abovementioned problems and achieve high EQE and high modulation bandwidth. The n-AlGaN free transverse structure LEDs have been demonstrated to yield high crystal quality multiple quantum wells (MQWs). Due to the transverse electron injection, transverse structure LEDs can confine electrons well within the MQWs and avoid electron overflow. To enhance the electron injection and light extraction characteristics, the narrow and long mesa designs were optimized by both experimental and theoretical-fit results. Finite-difference time domain simulation indicates that the n+-GaN layer of the transverse LEDs with the transverse MQWs mesa design does not degrade light extraction. The transverse structure LEDs attain the maximum light output power and EQE recorded to date for DUV-LEDs below 250 nm, respectively 14 mW and 1.72 %. Furthermore, the −3 dB modulation bandwidth can be achieved up to 416 MHz.

Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT

In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation.

Intrinsic pentagon defect engineering in multiple spatial-scale carbon frameworks for efficient triiodide reduction

Intrinsic topological defect engineering has been proven as a promising strategy to elevate the electrocatalytic activity of carbon materials. However, the controllable construction of high-density and specific topological defects in carbon frameworks to reveal the relationship between reactivity and defect structure remains a challenging task. Herein, the intrinsic pentagon carbon sites that can favor electron overflow and enhance their binding affinity towards the intermediates of catalytic reaction are firstly presented by the work function and the p-band center calculations. To experimentally verify this, the cage-opening reaction of fullerene is proposed and utilized for synthesizing carbon quantum dots with specific pentagon configuration (CQDs-P), subsequently utilizing CQDs-P to modulate the micro-scale defect density of three-dimensional reduced graphene oxide (rGO) via π-π interactions. The multiple spatial-scale rGO-conjugated CQDs-P structure simultaneously possesses abundant pentagon and edge defects as catalytic active sites and long-range-ordered π electron delocalization system as conductive network. The defects-rich CQDs-P/rGO-4 all-carbon-based catalyst exhibits superb catalytic activity for triiodide reduction reaction with a high photoelectric conversion efficiency of 8.40%, superior to the Pt reference (7.97%). Theoretical calculations suggest that pentagon defects in the carbon frameworks can promote charge transfer and modulate the adsorption/dissociation behavior of the reaction intermediates, thus enhancing the electrocatalytic activity of the catalyst. This work confirms the role of intrinsic pentagon defects in catalytic reactions and provides a new insight into the synthesis of defects-rich carbon catalysts.

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes

Increasing the injection efficiency, a critical factor constraining the reduction in threshold current in AlGaN-based deep-ultraviolet laser diodes, represents one of the paramount remaining technical challenges. In this study, the impact of compositionally graded layers that were unintentionally formed at the interface between the p-cladding and the core layer on carrier injection efficiency was analyzed. Experimental evaluations using laser diodes have shown that the elimination of an unintentionally formed layer increases the injection efficiency above the threshold current, from the conventional 3% to 13%. It has been postulated that the electron overflow toward the p-side exerts a substantial deleterious effect on the injection efficiency. An improvement in this aspect is achieved by increasing the electron-blocking capability due to the improved interface abruptness between the p-cladding layer and the core layer. The lasing threshold was strongly reduced, and characteristic temperature increased from 76 to 107 K for the improved devices.

Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light source

This study focuses on modeling and analyzing a multi-wavelength (MW) ultraviolet light-emitting diode (UV LED) equipped with grading transition layers, which holds potential as a versatile and artificial UV light source. Commencing with the exploration of simple dual and triple-wavelength UV LEDs, we delve into the device mechanism, including the role of the grading transition layer and the control of emission intensity ratios. The grading transition layer connects modules with different emission wavelengths, effectively enhancing hole injection by diminishing the effective hole barrier and providing three-dimensional hole gas (3DHG). Besides, the emission intensity ratio of different modules is modulated through electron overflow, which is finely and coarsely controlled respectively by altering the quantum well number and the Al composition of electron controlling layers (ECLs). Modulating the ECL composition and quantum well number has good unilaterality facilitated by using grading transition layers, promoting a lower overall design complexity. Band diagrams, current dynamics, and carrier concentration distribution are analyzed to uncover various device mechanisms. After investigating dual-wavelength and triple-wavelength LEDs, a broadband UV LED is designed and demonstrated through the numerical method. The LED incorporates five emission modules, and each module has a similar emission intensity, contributing to a near 100 nm width UV spectrum. We expect this work lays the foundation for MW and broadband UV LED designs, fostering advancements in the AlGaN-based UV LED community.

Lifetime enhancement in QDLEDs via an electron-blocking hole transport layer

This study investigates the impact of an engineered hole transport layer (HTL) on the stability of electroluminescent quantum dot light-emitting devices (QDLEDs). The 9-Phenyl-3,6-bis(9-phenyl-9Hcarbazol-3-yl)-9H-carbazole (Tris-PCz) HTL, which possesses a shallower lowest unoccupied molecular orbital (LUMO) energy level compared to the widely used 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) HTL, is employed to confine electron overflow toward the HTL. Utilizing the Tris-PCz HTL results in a 20× improvement in the electroluminescence half-life (LT50) of QDLEDs compared with conventional QDLEDs using the CBP HTL. Electric and optoelectronic analyses reveal that the migration of excess electrons toward the HTL is impeded by the up-shifted LUMO level of Tris-PCz, contributing to prolonged operational device stability. Furthermore, the augmented electric field at the QD/Tris-PCz interface, due to accumulated electrons, expedites hole injection rates, leading to better charge injection balance and the confinement of the exciton recombination zone within the QD and thus the device stability enhancement. This study highlights the significant influence of the HTL on QDLED stability and represents one of the longest LT50 for a QDLED based on the conventional core/shell QD structure.

Effect analysis of spatial discrepancy of secondary emission yield on multipactor formation

Spatial discrepancy of secondary emission yield (SEY) is probably exacerbated by unexpected surface contamination or imperfect surface treatments for SEY suppression, which accordingly provokes increased multipactor risk in microwave devices. In this paper, an improved 2D2V nonstationary statistical modeling for multipactor of parallel plates capable of regarding all electron impacts and electron exchange at the periodic boundaries is developed to investigate the effect of this spatial SEY discrepancy on multipactor formation in microwave devices. The comparison with the 1D2V statistical modeling results, which is valid for the parallel-plate multipactor, proves the accuracy of this improved 2D2V statistical modeling and the necessity of appropriate boundary setting in multipactor analysis with spatial SEY variation. The modeling results also reveal that the multipactor establishment is dominated by the electron multiplication and the electron overflow in the high-SEY region, thus making the multipactor threshold strongly dependent on both the SEY property and the dimension of the region. Electron multiplication can be fully sustained in the high-SEY region when its size exceeds a critical dimension, which satisfies a scaling law (the sustaining dimension is proportional to the gap with the product of the RF frequency and the gap kept constant) and varies with the involved multipactor mode. This research will help in evaluating accidental multipactor risk caused by the surface contamination and the efficiency of multipactor prevention via applying surface treatments for SEY suppression to accessible regions.

Theoretical background of electron tunneling in electrochemical double layer

The electron tunneling or overflow in the electrochemical double layer has been mentioned in many previous reports, but its detailed influence mechanism is often neglected. In this work, we combined quantum chemistry and electrochemical double layer theory mathematically to investigate the reason for the nonlinear distribution of potential. By analyzing the electron transfer theory, we determined the condition and criterion for electron tunneling. We derived a formula for the relation between diffusion layer potential and electrode potential and compared it with the traditional model. The resulting curve exhibits a widened, sloped platform near the zero potential point. In addition, we analyzed the effects of the electrochemical double layer on input system signals using signal simulation. These results provide a foundation for further research in this area.

Research on the Electron-blocking Layers in the GaN-based LEDs

The electron overflow happening in the active region of GaN-based light-emitting diodes (LEDs) will decrease the rate of radiative recombination, leading to a reduction of light output power. To deal with the problem, the electron blocking layer(EBL) is designed to weaken electrons leakage. Various designs and structures of the electron blocking layers embedded in the multiple quantum layers of GaN-based LEDs are reviewed in this paper. Designs such as trapezoidal EBL, step-graded superlattice EBL, and hybrid EBL can all effectively limit the amount of electron overflow. With many designs of EBL, LEDs are expected to have a wider range of applications in the opto-electric field.

Carrier Confinement in Ultraviolet-C AlGaN Light-Emitting Diodes

We have numerically analyzed three different light-emitting diodes (LEDs) namely LED S1, LED S2, and LED S3 in the ultraviolet (UV) region. The band diagram, radiative recombination, and carrier distribution have been studied for LED S2 and LED S3 in comparison to LED S1. Our simulation study has shown that both the proposed structures i.e., LED S2 and LED S3 prove to be better strategies for impeding electron overflow and improving hole inflow. LED S2 and LED S3 have been found to have a reduced efficiency droop at 200 A cm−2 than reference LED S1. Increase in carrier concentration and radiative recombination rate have directly affected the internal quantum efficiency (IQE) of LED S2 and LED S3. The emission spectra of proposed LEDs have increased markedly as compared to LED S1.

Advanced oxidation via the synergy of C-defective/ C–O band modified ultrathin porous g-C3N4 and PMS for efficient photothermal degradation of bisphenol pollutants and lignin derivatives

This work uses thermal polymerization of urea nitrate, oxyacetic acid and urea as the raw material to prepare ultra-thin porous carbon nitride with carbon defects and C–O band (OA-UN-CN). Density functional theory (DFT) calculations showed OA-UN-CN had narrower band gap, faster electron transport and a new internal construction electric field. Additionally, the prepared OA-UN-CN significantly enhanced photocatalytic activation of peroxymonosulfate (PMS) due to enhanced light absorption performance and faster electron overflow. As the result, the OA-UN-CN/PMS could entirely degrade bisphenol A (BPA) within 30 min, where the photodegradation rate was 81.8 and 7.9 times higher than that of g-C3N4 and OA-UN-CN, respectively. Beyond, the OA-UN-CN/PMS could likewise degrade other bisphenol pollutants and sodium lignosulfonate efficiently. We suggested possible photocatalytic degradation pathways accordingly and explored the toxicity of its degradation products. This work provides a new idea on the development of advanced photocatalytic oxidation processes for the treatment of bisphenol pollutants and lignin derivatives, via a metal-free photothermal-catalyst.

Design and analysis of novel high-performance III-nitride MQW-based nanowire white-LED using HfO2/SiO2 encapsulation

A novel, white light-emitting diode structure with improved thermal characteristics is designed for providing efficient light which may be used especially in the underground mining environment. It describes a new nano hafnium oxide-silica doped silicone layer as LED encapsulation material that promises enhanced efficiency by 30.1% and reduced efficiency droop of 0.491%. The enhanced power and efficiency of the LED with HfO2/SiO2 doped bi-layer are attributed to the significant minimization of overflow of electrons which is fundamentally responsible for efficiency degradation through p-GaN region. In this article encapsulant material based on nano HfO2/SiO2 not only enhances light extraction but opens a broad new range of encapsulant engineering capabilities composites. Our designed LED is generated from a monolithic composition of blue and yellow spectrum which eventually creates the white light. This minimizes the problems related to multiple numbers of LEDs, green gap and phosphor color rendering.

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier.

Electron leakage has an adverse influence on the optical output power for laser diodes (LDs), especially where the conventional last quantum barrier (LQB) in the multiple quantum well (MQW) active region may cause severe leakage problems. In this article, a composite last quantum barrier (CLQB) composed of p-type doped AlGaN (p-AlGaN) and unintentionally doped GaN (u-GaN) layers is designed to replace the conventional one, for overcoming the problem of electron overflow. Theoretical calculations with LASTIP software demonstrate that CLQB with optimized parameters of Al composition, thickness and p-type doping concentration of the p-AlGaN layer in the CLQB can have a 50% improvement in slope efficiency (SE) compared with the conventional structure LD. This will help to realize a higher optical output power in InGaN-based violet LDs.

The charging performance in contact electrification of fluorinated ethylene propylene surfaces by electrode bridge

Triboelectricity utilizes triboelectric nanogenerators (TENG) that transfer negative charges between two material surfaces that are in contact. Incomplete flow of charges results in charge accumulation on the material surfaces. In this study, we demonstrated that the accumulated charges could enhance induced output by contact electrification using electrode bridge (EB) to improve charge transfer mechanism. Triboelectric nanogenerator electrode bridge (TENG-EB) was fabricated using synergistic combination of polymer-polymer, polymer-metal, and metal-metal contacts during contact-electrification. Fluorinated ethylene propylene (FEP) film was fabricated using hot pressing technique. FEP crystallinity reached 85.8%, maximum temperature for ε r of FEP was 145 °C, and remanent polarization of FEP polymer was 4.2 µC mm – 2 . The individual events of the charge transfer during contact and separating of TENG-EB could be studied with a single electrode measurement. Separation of FEP, EB and electrode surfaces led to induced output of which signal was 4 times higher than TENG with non-EB. This mechanism utilized DC output that enhanced AC output signal for a given tapping frequency across a rectifier circuit. This new route is proposed for further research, development and invention in alternative energy field including energy harvesting and flexible electronic devices. • Charges event is demonstrated using electrode bridge (EB) induced output performance. • Triboelectric nanogenerator electrode bridge (TENG-EB) was fabricated based on synergistic combination of polymer-polymer, polymer-metal, and metal-metal contacts. • FEP-Al hot pressing is fabricated for electron blocking layer (EBL) has also played a vital role in blocking the electron overflow between a negative material and an electrode. • Output signal of TENG-EB is 4 times higher than that of a TENG non-EB.

Enhanced performance in deep-ultraviolet laser diodes with an undoped BGaN electron blocking layer.

Aluminum-rich p-AlGaN electron blocking layers (EBLs) are typically used for preventing overflow of electrons from the active region in AlGaN-based deep ultraviolet (DUV) laser diode (LD). However, these cannot effectively prevent electron leakage and form barrier layers, which affects the hole injection efficiency. Herein, the traditional p-AlGaN EBL in LD is replaced with an undoped BGaN EBL. The undoped BGaN EBL LD increases the effective barrier height of the conduction band to prevent the leakage of electrons and decreases the energy loss caused by the polarization induced electric field, enhancing the hole injection. The slope efficiency of the undoped BGaN EBL LD is 289% higher than that of the highly doped AlGaN EBL LD, and its threshold current is 51% lower. Therefore, the findings of this study provide insights for solving the problems of electron leakage and insufficient hole injection in high-performance and undoped EBL DUV LDs.

N-polar InGaN nanowires: breaking the efficiency bottleneck of nano and micro LEDs

The efficiency of conventional quantum well light-emitting diodes (LEDs) decreases drastically with reducing areal size. Here we show that such a critical size scaling issue of LEDs can be addressed by utilizing N-polar InGaN nanowires. We studied the epitaxy and performance characteristics of N-polar InGaN nanowire LEDs grown on sapphire substrate by plasma-assisted molecular beam epitaxy. A maximum external quantum efficiency ∼11% was measured for LEDs with lateral dimensions as small as 750 nm directly on wafer without any packaging. The effect of electron overflow and Auger recombination on the device performance is also studied. This work provides a viable approach for achieving high-efficiency nano and micro LEDs that were not previously possible.

Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer

The electron blocking layer (EBL) plays a vital role in blocking the electron overflow from an active region in the AlGaN-based deep-ultraviolet light-emitting diode (DUV-LED). Besides the blocking of electron overflow, EBL reduces hole injection toward the active region. In this work, we proposed a DUV nanowire (NW) LED structure without EBL by replacing it with a compositionally continuous graded hole source layer (HSL). Our proposed graded HSL without EBL provides a better electron blocking effect and enhanced hole injection efficiency. As a result, optical power is improved by 48% and series resistance is reduced by 50% with 4.8 V threshold voltage. Moreover, graded HSL without EBL offer reduced electric field within the active region, which leads to a significant increment in radiative recombination rate and enhancement of spontaneous emission by 34% at 254 nm wavelength, as a result, 52% maximum internal quantum efficiency with 24% efficiency drop is reported.