Research on the Electron-blocking Layers in the GaN-based LEDs

Abstract

The electron overflow happening in the active region of GaN-based light-emitting diodes (LEDs) will decrease the rate of radiative recombination, leading to a reduction of light output power. To deal with the problem, the electron blocking layer(EBL) is designed to weaken electrons leakage. Various designs and structures of the electron blocking layers embedded in the multiple quantum layers of GaN-based LEDs are reviewed in this paper. Designs such as trapezoidal EBL, step-graded superlattice EBL, and hybrid EBL can all effectively limit the amount of electron overflow. With many designs of EBL, LEDs are expected to have a wider range of applications in the opto-electric field.