Abstract

Spatial discrepancy of secondary emission yield (SEY) is probably exacerbated by unexpected surface contamination or imperfect surface treatments for SEY suppression, which accordingly provokes increased multipactor risk in microwave devices. In this paper, an improved 2D2V nonstationary statistical modeling for multipactor of parallel plates capable of regarding all electron impacts and electron exchange at the periodic boundaries is developed to investigate the effect of this spatial SEY discrepancy on multipactor formation in microwave devices. The comparison with the 1D2V statistical modeling results, which is valid for the parallel-plate multipactor, proves the accuracy of this improved 2D2V statistical modeling and the necessity of appropriate boundary setting in multipactor analysis with spatial SEY variation. The modeling results also reveal that the multipactor establishment is dominated by the electron multiplication and the electron overflow in the high-SEY region, thus making the multipactor threshold strongly dependent on both the SEY property and the dimension of the region. Electron multiplication can be fully sustained in the high-SEY region when its size exceeds a critical dimension, which satisfies a scaling law (the sustaining dimension is proportional to the gap with the product of the RF frequency and the gap kept constant) and varies with the involved multipactor mode. This research will help in evaluating accidental multipactor risk caused by the surface contamination and the efficiency of multipactor prevention via applying surface treatments for SEY suppression to accessible regions.

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