Enhanced Electron Mobility Research Articles

Two‐Dimensional Polycyclic Photovoltaic Molecule with Low Trap Density for High‐Performance Photocatalytic Hydrogen Evolution

AbstractTypical organic semiconductors show a high trap density of states (1016–1018 cm−3), providing a large number of centers for charge‐carrier recombination, thus hindering the development of photocatalytic hydrogen evolution. Here, we design and synthesize a two‐dimensional polycyclic photovoltaic material, named as TPP, to reduce the trap density to as low as 2.3×1015 cm−3, which is 1–3 orders of magnitude lower than those of typical organic semiconductors. Moreover, TPP exhibits a broad and strong absorption, ordered molecular packing with a large crystalline coherence length and enhanced electron mobility. Then, the bulk heterojunction nanoparticles (BHJ‐NPs) based on a blend of polymer donor (PM6) and TPP exhibit an average hydrogen evolution rate (HER) of 64.31 mmol h−1 g−1under AM1.5G sunlight (100 mW cm−2), and 72.75 mmol h−1 g−1under 330–1100 nm illumination (198 mW cm−2) higher than that of the control NPs based on typical PM6 : Y6 (62.67 mmol h−1 g−1).

Aluminum Doping Effects on Interface Depletion Width of Low Temperature Processed ZnO Electron Transport Layer-Based Perovskite Solar Cells.

Rapid improvement in efficiency and stabilities of perovskite solar cells (PSCs) is an indication of its prime role for future energy demands. Various research has been carried out to improve efficiency including reducing the exciton recombination and enhancement of electron mobilities within cells by using electron transport material (ETM). In the present research, electrical, optical, and depletion width reduction properties of low temperature processed ZnO electron transport layer-based perovskite solar cells are studied. The ZnO thin films vary with the concentration of Al doping, and improvement of optical transmission percentage up to 80% for doped samples is confirmed by optical analysis. Reduction in electrical resistance for 1% Al concentration and maximum conductivity 11,697.41 (1/Ω-cm) among the prepared samples and carrier concentration 1.06×1022 cm−3 were corroborated by Hall effect measurements. Systematic impedance spectroscopy of perovskite devices with synthesized ETM is presented in the study, while the depletion width reduction is observed by Mott Schottky curves. IV measurements of the device and the interfacial charge transfer between the absorber layer of methylammonium lead iodide and ETM have also been elaborated on interface electronic characteristics.

Competing single-chain folding and multi-chain aggregation pathways control solution-phase aggregate morphology of organic semiconducting polymers.

Understanding the solution-phase behaviour of organic semiconducting polymers is important for systematically improving the performance of devices based on solution-processed thin films of these molecules. Conventional polymer theory predicts that polymer conformations become more compact as solvent quality decreases, but recent experiments have shown the high-performance organic-semiconducting polymer P(NDI2OD-T2) to form extended rod-like aggregates much larger than a single chain in poor solvents, with the formation of these extended aggregates correlated with enhanced electron mobility in films deposited from these solutions. We explain the unexpected formation of extended aggregates using a novel coarse-grained simulation model of P(NDI2OD-T2) that we have developed to study the effect of solvent quality on its solution-phase behaviour. In poor solvents, we find that aggregation through only a few monomers gives effectively inseparable chains, leading to the formation of extended structures of partially overlapping chains via non-equilibrium assembly. This behaviour requires that multi-chain aggregation occurs faster than chain folding, which we show is the case for the chain lengths and concentrations shown experimentally to form rod-like aggregates. This kinetically controlled process introduces a dependence of aggregate structure on concentration, chain length, and chain flexibility, which we show is able to reconcile experimental findings and is generalisable to the solution-phase assembly of other semiflexible polymers.

Ultrafine platinum nanoparticles supported on N,S-codoped porous carbon nanofibers as efficient multifunctional materials for noticeable oxygen reduction reaction and water splitting performance.

The design of highly active, stable and durable platinum-based electrocatalysts towards the oxygen reduction reaction (ORR), oxygen evolution reaction (OER), hydrogen evolution reaction (HER), and hydrogen adsorption has a high and urgent demand in fuel cells, water splitting and hydrogen storage. Herein, ultrafine platinum nanoparticles (Pt NPs) supported on N,S-codoped porous carbon nanofibers (Pt–N,S-pCNFs) hybrids were prepared through the electrospinning method coupled with hydrothermal and carbonation processes. The ultrafine Pt NPs are sufficiently dispersed and loaded on pCNFs and codoped with N and S, which can improve oxygen adsorption, afford more active sites, and greatly enhance electron mobility. The Pt–N,S-pCNFs hybrid achieves excellent activity and stability for ORR with ∼70 mV positive shift of onset potential compared to the commercial Pt/C-20 wt% electrocatalyst. The long-term catalytic durability with 89.5% current retention after a 10 000 s test indicates its remarkable ORR behavior. Pt–N,S-pCNFs also exhibits excellent HER and OER performance, and can be used as an efficient catalyst for water splitting. In addition, Pt–N,S-pCNFs exhibits an excellent hydrogen storage capacity of 0.76 wt% at 20 °C and 10 MPa. This work provides novel design strategies for the development of multifunctional materials as high-performance ORR catalysts, water splitting electrocatalysts and hydrogen storage materials.

Boron-based non-fullerene small molecule acceptors via nitrogen substitution: a theoretical study

Theoretical calculations show that new boron-based acceptors with nitrogen substitution lead to enhanced electron mobility, and improved light-absorption and interfacial properties which are helpful for performances of organic solar cells.

Mesoporous tellurium oxide incorporated g-C3N4 for boosted photoinduced – visible-light reduction of Hg(II)

Two-dimensional (2D) tellurium oxide (TeO2) nanoparticles were homogenously incorporated porous graphitic carbon nitride (g-C3N4) utilizing a simple synthesis sol–gel approach in the occurrence of soft and hard templates. The photocatalytic performance of TeO2/g-C3N4 photocatalysts was performed to reduce Hg(II) ions during visible light illumination. α-TeO2 NPs as tetragonal phases are uniformly scattered with small particle size (15 nm) onto layer structure of g-C3N4. The highest photocatalytic performance (100%) within 40 min is 3 %TeO2/g-C3N4 photocatalyst, and it was enhanced 6.66 and 3.7 folds larger than bare g-C3N4 and TeO2. The rate constant of 3 %TeO2/g-C3N4 photocatalyst is fostered nearly 7.6 and 14.3 times larger than the bare TeO2 NPs and g-C3N4. TeO2 with a nanoscale diameter size (∼15 nm) exhibited a higher photoreduction rate and faster kinetics. Such high reduction ability over TeO2/g-C3N4 photocatalyst was ascribed to the advantageous construction of TeO2/g-C3N4 heterojunction, the synergistic effects of TeO2 and g-C3N4 and the enhancement in electron mobility and efficient electrons and holes separation rate. Owing to such advantageous properties, the 2D- TeO2/g-C3N4 photocatalyst presents promising application potentials as a high-performance photoreduction process.

A wafer-scale van der Waals dielectric made from an inorganic molecular crystal film

Van der Waals dielectrics, such as hexagonal boron nitride, are widely used to preserve the intrinsic properties of two-dimensional semiconductors in electronic devices. However, fabricating these materials on the wafer scale and integrating them with two-dimensional semiconductors is challenging because their synthesis typically requires mechanical exfoliation or vapour deposition processes. Here we show that a high-κ van der Waals dielectric can be created on wafer scales using an inorganic molecular crystal film of antimony trioxide (Sb2O3) fabricated via thermal evaporation deposition. Monolayer molybdenum disulfide (MoS2) field-effect transistors supported by this dielectric substrate exhibit enhanced electron mobility—from 26 cm2 V−1 s−1 to 145 cm2 V−1 s−1—and reduced transfer-curve hysteresis compared with when using SiO2 substrate. MoS2 transistors directly gated by the Sb2O3 film can operate with a supply voltage of 0.8 V, on/off ratio of 108 and subthreshold swing of 64 mV dec−1 at 300 K.

Synergistic Engineering of Side Chains and Backbone Regioregularity of Polymer Acceptors for High‐Performance All‐Polymer Solar Cells with 15.1% Efficiency

AbstractTuning the aggregation and crystalline properties of polymers is critical for realizing all‐polymer solar cells (all‐PSCs) with optimal blend morphology and high power conversion efficiency (PCE). In this study, a series of polymerized small‐molecule acceptors (PSMAs) is developed to investigate important relationships among their crystalline/aggregation properties, the blend morphology, and the device performance of the resulting all‐PSCs. A series of PSMAs (regiorandom (RRd)‐C12, RRd‐C20, RRd‐C24, regioregular (RRg)‐C20, and RRg‐C24) with simultaneously‐engineered i) side chain lengths of C12, C20, and C24, and ii) backbone regioregularities of RRd and RRg are synthesized to regulate their crystalline/aggregation properties. As a result, the highest PCE of 15.12% is obtained with all‐PSCs based on RRg‐C20 PSMA having regioregular backbone and optimal side chain length, attributed to high PSMA crystallinity and electron mobility as well as optimal blend morphology with a polymer donor. Thus, this study demonstrates the importance of simultaneous engineering of the backbone regioregularity and side‐chain structures of PSMAs to enhance electron mobility, optimize blend morphology and, thus, achieve highly efficient all‐PSCs.

High electron mobility in strained GaAs nanowires

Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology.

Impact of fluorination on photovoltaic performance in high thermo- and photo-stability perylene diimide-based nonfullerene small molecular acceptors

Fluorinations play the momentous impact in tuning the optical absorption, energy levels, aggregation and microstructurally morphology. Two acceptor-donor-acceptor (A-D-A) non-fullerene small molecular acceptors (SMAs), namely, 2T-(PDI-HD)2 and F2T-(PDI-HD)2, by incorporating two fluorine atoms into the central 2,2′-bithiophene linked core, were synthesized. The resultant PDI-based SMAs had excellent thermo- and photo-stability, wide absorption ranging from 300 to 700 nm, and ELUMOs of −3.71 to −3.84 eV. It was demonstrated that the enhanced molar absorption coefficient, elevated ELUMO, slightly strengthened film aggregation and lowered miscibility with donor PTB7-Th were observed after incorporating fluorine atom onto the SMAs. Further surface electrostatic potential (ESP) calculation elucidated that the fluorination could increase molecular polarity and maximize the ESP difference between PTB7-Th and SMAs, facilitating exciton dissociation and the charge transport. Accordingly, an 39.01% improved PCE from 1.82% to 2.53% was yielded in PTB7-Th:F2T-(PDI-HD)2 based device, mainly benefitting from 26.17% enhanced JSC and 22.82% elevated FF even if the adverse condition of decreased VOC. This improvement was profited from the increased absorption coefficient, enhanced electron mobility as well as favorable microstructurally morphology. The results demonstrated that inserting fluorine atoms into the central linked core was an effective strategy to improve the device performance.

Pre-sodiation strategy for superior sodium storage batteries

The irreversible consumption of sodium in the initial several cycles greatly led to the attenuation of capacity, which caused the low initial coulombic efficiency (ICE) and obvious poor cycle stability. Pre-sodiation can effectively improve the electrochemical performance by compensating the capacity loss in the initial cycle. Here, carbon-coated sodium-pretreated iron disulfide (NaFeS2@C) has been synthesized through conventional chemical method and used in sodium metal battery as a cathode material. The calculated density of states (DOS) of NaFeS2@C is higher, which implies enhanced electron mobility and improved cycle reversibility. Because of the highly reversible conversion reaction and the compensation of irreversible capacity loss during the initial cycle, the Na/NaFeS2@C battery achieves ultra-high initial coulombic efficiency (96.7%) and remarkable capacity (751 mA·h·g−1 at 0.1 A·g−1). In addition, highly reversible electrochemical reactions and ultra-thin NaF-rich solid electrolyte interphase (SEI) also benefit for the electrochemical performance, even at high current density of 100 A·g−1, it still exhibits a reversible capacity of 136 mA·h·g−1, and 343 mA·h·g−1 after 2500 cycles at 5.0 A·g−1. This work aims to bring up new insights to improve the ICE and stability of sodium metal batteries.

Double-layer synergistic optimization by functional black phosphorus quantum dots for high-efficiency and stable planar perovskite solar cells

Additive engineering is one of the most effective techniques for optimizing the performance of perovskite solar cells (PSCs). However, the previous research mainly focused on adopting this strategy to a single layer of the PSCs. In this work, a double-layer synergistic optimization approach is employed by simultaneously introducing functional black phosphorus quantum dots (BPQDs) into the electron transport layer (ETL) and perovskite layer. The BPQDs with superior conductivity is doped into SnO2 ETL to effectively fill the electron traps and enhance electron mobility of SnO2. Meanwhile, the 3-aminopropyltriethoxysilane-modified BPQDs (BPQDs@APTES) is introduced into the perovskite bulk to moderately tailor its intrinsic characteristics, and this synchronously facilitates the perovskite nucleation and growth, passivates defects and improves moisture-resistance of perovskite film. Taking advantage of the synergistic effects, efficient PSCs with power conversion efficiency of 22.85% with ultrahigh open-circuit voltage (VOC) of 1.22 V is demonstrated, this VOC value ranks in the highest values of perovskite film with a bandgap of ~ 1.60 eV. Additionally, the non-encapsulated BPQDs modified PSCs show better long time and humidity stability.

A Three-Dimensional sp2 Carbon-Conjugated Covalent Organic Framework.

A first example of an sp2 carbon-conjugated three-dimensional (3D) covalent organic framework (COF) (BUCT-COF-4) is synthesized via the Knoevenagel condensation of the saddle-shaped aldehyde-substituted cyclooctatetrathiophene and 1,4-phenylenediacetonitrile. Ascribed to the extended π-conjugation and long-range ordered structures, BUCT-COF-4 displays high Hall electron mobility of 1.97 cm2 V-1 s-1 at room temperature. After it is doped with iodine, the material not only exhibits an enhanced electron mobility up to 2.62 cm2 V-1 s-1 in ambient air but also presents an unexpected metal-free ferromagnetic phase transition arising from the formation of aligned spins unidirectional across the whole sp2 carbon-conjugated 3D framework. This is the first report of a ferromagnetic phenomenon in 3D COF materials, which would broaden promising applications and open a new frontier in COF materials.

Accelerated sunlight photocatalysis through improved electron mobility between g-C3N4 and BiPO4 nanomaterial.

Herein, we report a detailed study on creating heterojunction between graphitic carbon nitride (g-C3N4) and bismuth phosphate (BiPO4), enhancing the unpaired free electron mobility. This leads to an accelerated photocatalysis of 2,4-dichlorophenols (2,4-DCPs) under sunlight irradiation. The heterojunction formation was efficaciously conducted via a modest thermal deposition technique. The function of g-C3N4 plays a significant role in generating free electrons under sunlight irradiation. Together, the generated electrons at the g-C3N4 conduction band (CB) are transferred and trapped by the BiPO4 to form active superoxide anion radicals (•O2-). These active radicals will be accountable for the photodegradation of 2,4-DCPs. The synthesized composite characteristics were methodically examined through several chemical and physical studies. Due to the inimitable features of both g-C3N4 and BiPO4, its heterojunction formation, 2.5wt% BiPO4/g-C3N4 achieved complete 2,4-DCP removal (100%) in 90 min under sunlight irradiation. This is due to the presence of g-C3N4 that enhanced electron mobility through the formation of heterojunctions that lengthens the electron-hole pairs' lifetime and maximizes the entire solar spectrum absorption to generate active electrons at the g-C3N4 conduction band. Thus, this formation significantly draws the attention for future environmental remediation, especially in enhancing the entire solar spectrum's harvesting.

Demonstration of AlGaN/GaN HEMTs on vicinal sapphire substrates with large misoriented angles

In this work, the electrical characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) on vicinal c-plane sapphire substrates with different misoriented angles are investigated. As the angle increases from 0.2°, 1.0° to 4.0°, an enlarged width and height of surface step bunching as well as significantly enhanced electron mobility from 957, 1123 to 1246 cm2/V s were measured. As a result, a large boost in the maximum output current (IDmax) from ∼300 mA/mm (on a 0.2° substrate) to ∼650 mA/mm (on a 4.0° substrate) can be observed. Importantly, HEMTs on 1.0° and 4.0° substrates exhibit an obvious anisotropic electrical behavior: the IDmax along the [11-20] orientation is larger than that along the [10-10] orientation. Such a difference becomes more distinct as the misoriented angle increases, attributing to the lifted step height that would introduce a potential barrier for the electron transport along the [10-10] orientation. In short, this work demonstrates an effective approach toward the realization of high-performance HEMTs with anisotropic electrical behavior on a single device platform.

First-principles study of electron transport in ScN

We investigate the conduction-band structure and electron mobility in rocksalt ScN based on density functional theory. The first-principles band structure allows us to obtain band velocities and effective masses as a function of energy. Electron-phonon scattering is assessed by explicitly computing the $q$-dependent electron-phonon matrix elements, with the inclusion of the long-range electrostatic interaction. The influence of free-carrier screening on the electron transport is assessed using the random-phase approximation. We find a notable enhancement of electron mobility when the carrier concentration exceeds ${10}^{20}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$. We calculate the room-temperature electron mobility in ScN to be 587 ${\mathrm{cm}}^{2}/\mathrm{Vs}$ at low carrier concentrations. When the carrier concentration is increased, the electron mobility starts to decrease significantly around $n={10}^{19}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$ and drops to 240 ${\mathrm{cm}}^{2}/\mathrm{Vs}$ at $n={10}^{21}\phantom{\rule{4pt}{0ex}}{\mathrm{cm}}^{\ensuremath{-}3}$. We also explore the influence of strain in (111)- and (100)-oriented ScN films. For (111) films, we find that a 1.0% compressive epitaxial strain increases the in-plane mobility by 72 ${\mathrm{cm}}^{2}/\mathrm{Vs}$ and the out-of-plane mobility by 50 ${\mathrm{cm}}^{2}/\mathrm{Vs}$. For (100) films, a 1.0% compressive epitaxial strain increases the out-of-plane mobility by as much as 172 ${\mathrm{cm}}^{2}/\mathrm{Vs}$, but has a weak impact on the in-plane mobility. Our study sheds light on electron transport in ScN at different electron concentrations and shows how strain engineering could increase the electron mobility.

Discovery of a Wurtzite-like Cu2FeSnSe4 Semiconductor Nanocrystal Polymorph and Implications for Related CuFeSe2 Materials.

I2-II-IV-VI4 and I-III-VI2 semiconductor nanocrystals have found applications in photovoltaics and other optoelectronic technologies because of their low toxicity and efficient light absorption into the near-infrared. Herein, we report the discovery of a metastable wurtzite-like polymorph of Cu2FeSnSe4, a member of the I2-II-IV-VI4 family of semiconductors containing only earth-abundant metals. Density functional theory calculations on this metastable polymorph of Cu2FeSnSe4 indicate that it may be a superior semiconductor for solar energy and optoelectronics applications compared to the thermodynamically preferred stannite polymorph, since the former displays a sharper dispersion of energy levels near the conduction band minimum that can enhance electron mobility and suppress hot electron cooling. The experimental optical band gap was measured by the inverse logarithmic derivative method to be direct, in agreement with theory, and in the range of 1.48-1.59 eV. Mechanistic studies reveal that this metastable phase derives from intermediate Cu3Se2 nanocrystals that serve as a structural template for the final hexagonal wurtzite-like product. We compare the chemistry of wurtzite-like Cu2FeSnSe4 to the related CuFeSe2 material system. Our experimental and computational comparisons between Cu2FeSnSe4 and CuFeSe2 help explain both the crystal chemistry of CuFeSe2 that prevents it from forming wurtzite-like polymorphs and the essential role of Sn in stabilizing the metastable structure of Cu2FeSnSe4. This work provides insight into the importance of elemental composition when designing syntheses for metastable materials.

Significant Performance Improvement in n-Channel Organic Field-Effect Transistors with C60 :C70 Co-Crystals Induced by Poly(2-ethyl-2-oxazoline) Nanodots.

Solution-processed organic field-effect transistors (OFETs) have attracted great interest due to their potential as logic devices for bendable and flexible electronics. In relation to n-channel structures, soluble fullerene semiconductors have been widely studied. However, they have not yet met the essential requirements for commercialization, primarily because of low charge carrier mobility, immature large-scale fabrication processes, and insufficient long-term operational stability. Interfacial engineering of the carrier-injecting source/drain (S/D) electrodes has been proposed as an effective approach to improve charge injection, leading also to overall improved device characteristics. Here, it is demonstrated that a non-conjugated neutral dipolar polymer, poly(2-ethyl-2-oxazoline) (PEOz), formed as a nanodot structure on the S/D electrodes, enhances electron mobility in n-channel OFETs using a range of soluble fullerenes. Overall performance is especially notable for (C60 -Ih )[5,6]fullerene (C60 ) and (C70 -D5h(6) )[5,6]fullerene (C70 ) blend films, with an increase from 0.1 to 2.1 cm2 V-1 s-1 . The high relative mobility and eighteen-fold improvement are attributed not only to the anticipated reduction in S/D electrode work function but also to the beneficial effects of PEOz on the formation of a face-centered-cubic C60 :C70 co-crystal structure within the blend films.

Enhanced Charge Transport and Interface Passivation in Efficient Perovskite Solar Cells Using Sulfur‐Doped Graphite Carbon Nitride‐Modified SnO2‐Based Electron Transport Layers

High‐quality electron transport layer (ETL) is beneficial to improve the charge extraction and transport, which determines the performance of perovskite solar cells (PSCs). However, the unbalanced charge extraction and interface problems commonly occur in the tin oxide (SnO2) ETL. Herein, the sulfur‐doped graphite carbon nitride (CNS) nanosheets are prepared and utilized for modifying the SnO2 ETL to fabricate high‐performance PSCs. The CNS‐modified SnO2 ETL exhibits enhanced electron mobility and conductivity, and matched energy level with perovskite, which promotes the extraction and transport of charge carriers at the interface, and balances charge extraction with the hole transport layer. In addition, interfacial carrier recombination is significantly reduced through effective interface passivation of sulfur atoms in CNS with the undercoordinated lead ions in perovskite films. Meanwhile, the introduction of an interfacial control material CNS also contributes to improve the crystalline quality of perovskite films with increasing grain size and light absorption intensity. As a consequence, an outstanding improvement in power conversion efficiency (PCE) from 18.98% to 20.33% is achieved after introducing CNS into the SnO2 ETL, as well as an enhancement in stability against humidity, retaining near 90% of the initial PCE after aging in the ambient atmosphere for 30 days.

2D MXene-Molecular Hybrid Additive for High-Performance Ambipolar Polymer Field-Effect Transistors and Logic Gates.

MXenes are highly conductive layered materials that are attracting a great interest for high-performance opto-electronics, photonics, and energy applications.. Their non-covalent functionalization with ad hoc molecules enables the production of stable inks of 2D flakes to be processed in thin-films. Here, the formation of stable dispersions via the intercalation of Ti3 C2 Tx with didecyldimethyl ammonium bromide (DDAB) yielding Ti3 C2 Tx -DDAB, is demonstrated. Such functionalization modulates the properties of Ti3 C2 Tx , as evidenced by a 0.47eV decrease of the work function. It is also shown that DDAB is a powerful n-dopant capable of enhancing electron mobility in conjugated polymers and 2D materials. When Ti3 C2 Tx -DDAB is blended with poly(diketopyrrolopyrrole-co-selenophene) [(PDPP-Se)], a simultaneous increase by 170% and 152% of the hole and electron field-effect mobilities, respectively, is observed, compared to the neat conjugated polymer, with values reaching 2.0 cm2 V-1 s-1 . By exploiting the balanced ambipolar transport of the Ti3 C2 Tx -DDAB/PDPP-Se hybrid, complementary metal-oxide-semiconductor (CMOS) logic gates are fabricated that display well-centered trip points and good noise margin (64.6% for inverter). The results demonstrate that intercalant engineering represents an efficient strategy to tune the electronic properties of Ti3 C2 Tx yielding functionalized MXenes for polymer transistors with unprecedented performances and functions.